World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
5492
World Ranking
4944
National Ranking
1721

Albert G. Baca publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Albert G. Baca sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 236 publications — 40th percentile

40% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Albert G. Baca D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Albert G. Baca sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 38 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Albert G. Baca is affiliated with Sandia National Laboratories in the United States. Their research spans several domains within engineering, physics, and materials science, focusing primarily on semiconductor devices and electronic materials.

The primary fields of study for Albert G. Baca include:

  • Engineering
  • Physics and Astronomy
  • Materials Science

Their work extends into specific subfields such as:

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Mechanics of Materials

Albert G. Baca's main research topics cover a variety of semiconductor and material science themes:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Ga2O3 and related materials
  • Silicon Carbide Semiconductor Technologies
  • ZnO doping and properties
  • Thermal properties of materials
  • Metal and Thin Film Mechanics

The scientist has contributed to several recent publications, including:

  • "Al-rich AlGaN based transistors," 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "Thermal Conductivity of β-Phase Ga2O3 and (AlxGa1-x)2O3 Heteroepitaxial Thin Films," 2021, ACS Applied Materials & Interfaces
  • "Interdependence of Electronic and Thermal Transport in AlxGa1-xN Channel HEMTs," 2020, IEEE Electron Device Letters
  • "Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics," 2020, Journal of Electronic Packaging
  • "AlGaN High Electron Mobility Transistor for High-Temperature Logic," 2023, Journal of Microelectronics and Electronic Packaging

Albert G. Baca is also credited with a book chapter titled "III-Nitride Ultra-Wide Bandgap Electronic Devices (Chapter 12)" published in 2020 by the Office of Scientific and Technical Information.

Frequent co-authors collaborating with Albert G. Baca include:

  • Brianna Klein
  • Andrew A. Allerman
  • Andrew Armstrong
  • Robert Kaplar
  • E Douglas

Notable publication venues for their work are:

  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • ACS Applied Materials & Interfaces
  • IEEE Electron Device Letters
  • Journal of Electronic Packaging
  • Journal of Microelectronics and Electronic Packaging

Best Publications

  • A survey of ohmic contacts to III-V compound semiconductors

    A.G Baca;F Ren;J.C Zolper;R.D Briggs

  • Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

    F. Ren;M. Hong;S. N. G. Chu;M. A. Marcus

  • Ion‐implanted GaN junction field effect transistor

    J. C. Zolper;R. J. Shul;A. G. Baca;R. G. Wilson

  • Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

    B. Luo;J. W. Johnson;J. Kim;R. M. Mehandru

  • Stress relaxation and thermal evolution of film properties in amorphous carbon

    J. P. Sullivan;T. A. Friedmann;A. G. Baca

  • Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

    R. J. Kaplar;A. A. Allerman;A. M. Armstrong;M. H. Crawford

  • Photoconductive semiconductor switches

    G.M. Loubriel;F.J. Zutavern;A.G. Baca;H.P. Hjalmarson

  • An AlN/Al0.85Ga0.15N high electron mobility transistor

    Albert G. Baca;Andrew M. Armstrong;Andrew A. Allerman;Erica A. Douglas

  • dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

    B. Luo;J. W. Johnson;F. Ren;K. K. Allums

  • Sputtered AlN encapsulant for high‐temperature annealing of GaN

    J. C. Zolper;D. J. Rieger;A. G. Baca;S. J. Pearton

  • GaN electronics for high power, high temperature applications

    S.J. Pearton;F. Ren;A.P. Zhang;G. Dang

  • Inductively coupled plasma-induced etch damage of GaN p-n junctions

    R. J. Shul;L. Zhang;A. G. Baca;C. G. Willison

  • Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

    J. Han;A. G. Baca;R. J. Shul;C. G. Willison

  • Self-heating study of an AlGaN∕GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

    I. Ahmad;V. Kasisomayajula;M. Holtz;J. M. Berg

  • Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

    B. Luo;J. W. Johnson;F. Ren;K. K. Allums

  • 300°C GaN/AlGaN Heterojunction Bipolar Transistor

    Fan Ren;Cammy R. Abernathy;J. M. Van Hove;P. P. Chow

  • Al-rich AlGaN based transistors

    Albert G. Baca;Andrew M. Armstrong;Brianna A. Klein;Andrew A. Allerman

  • Doped contacts for high-longevity optically activated, high gain GaAs photoconductive semiconductor switches

    A. Mar;G.M. Loubriel;F.J. Zutavern;M.W. O'Malley

  • Epitaxially-grown GaN junction field effect transistors

    L. Zhang;L.F. Lester;A.G. Baca;R.J. Shul

  • Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics

    F Ren;C.R Abernathy;J.D MacKenzie;B.P Gila

  • InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

    P. C. Chang;A. G. Baca;N. Y. Li;P. R. Sharps

  • GaN Electronics For High Power, High Temperature Applications

    F. Ren;G. Dang

Frequent Co-Authors

Fan Ren
Fan Ren University of Florida
Stephen J. Pearton
Stephen J. Pearton University of Florida
Andrew A. Allerman
Andrew A. Allerman Sandia National Laboratories
Andrew M. Armstrong
Andrew M. Armstrong Sandia National Laboratories
C. R. Abernathy
C. R. Abernathy University of Florida
Robert Kaplar
Robert Kaplar Sandia National Laboratories
John F. Klem
John F. Klem Sandia National Laboratories
Mary H. Crawford
Mary H. Crawford Sandia National Laboratories
Jerry W. Johnson
Jerry W. Johnson IQE (United Kingdom)
Brent P. Gila
Brent P. Gila University of Florida

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