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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
5492
World Ranking
4944
National Ranking
1720

Overview

Albert G. Baca is affiliated with Sandia National Laboratories in the United States. Their research spans several domains within engineering, physics, and materials science, focusing primarily on semiconductor devices and electronic materials.

The primary fields of study for Albert G. Baca include:

  • Engineering
  • Physics and Astronomy
  • Materials Science

Their work extends into specific subfields such as:

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Mechanics of Materials

Albert G. Baca's main research topics cover a variety of semiconductor and material science themes:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Ga2O3 and related materials
  • Silicon Carbide Semiconductor Technologies
  • ZnO doping and properties
  • Thermal properties of materials
  • Metal and Thin Film Mechanics

The scientist has contributed to several recent publications, including:

  • "Al-rich AlGaN based transistors," 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "Thermal Conductivity of β-Phase Ga2O3 and (AlxGa1-x)2O3 Heteroepitaxial Thin Films," 2021, ACS Applied Materials & Interfaces
  • "Interdependence of Electronic and Thermal Transport in AlxGa1-xN Channel HEMTs," 2020, IEEE Electron Device Letters
  • "Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics," 2020, Journal of Electronic Packaging
  • "AlGaN High Electron Mobility Transistor for High-Temperature Logic," 2023, Journal of Microelectronics and Electronic Packaging

Albert G. Baca is also credited with a book chapter titled "III-Nitride Ultra-Wide Bandgap Electronic Devices (Chapter 12)" published in 2020 by the Office of Scientific and Technical Information.

Frequent co-authors collaborating with Albert G. Baca include:

  • Brianna Klein
  • Andrew A. Allerman
  • Andrew Armstrong
  • Robert Kaplar
  • E Douglas

Notable publication venues for their work are:

  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • ACS Applied Materials & Interfaces
  • IEEE Electron Device Letters
  • Journal of Electronic Packaging
  • Journal of Microelectronics and Electronic Packaging

Best Publications

  • A survey of ohmic contacts to III-V compound semiconductors

    A.G Baca;F Ren;J.C Zolper;R.D Briggs

  • Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

    F. Ren;M. Hong;S. N. G. Chu;M. A. Marcus

  • Ion‐implanted GaN junction field effect transistor

    J. C. Zolper;R. J. Shul;A. G. Baca;R. G. Wilson

  • Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

    B. Luo;J. W. Johnson;J. Kim;R. M. Mehandru

  • Stress relaxation and thermal evolution of film properties in amorphous carbon

    J. P. Sullivan;T. A. Friedmann;A. G. Baca

  • Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

    R. J. Kaplar;A. A. Allerman;A. M. Armstrong;M. H. Crawford

  • Photoconductive semiconductor switches

    G.M. Loubriel;F.J. Zutavern;A.G. Baca;H.P. Hjalmarson

  • An AlN/Al0.85Ga0.15N high electron mobility transistor

    Albert G. Baca;Andrew M. Armstrong;Andrew A. Allerman;Erica A. Douglas

  • dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

    B. Luo;J. W. Johnson;F. Ren;K. K. Allums

  • Sputtered AlN encapsulant for high‐temperature annealing of GaN

    J. C. Zolper;D. J. Rieger;A. G. Baca;S. J. Pearton

  • GaN electronics for high power, high temperature applications

    S.J. Pearton;F. Ren;A.P. Zhang;G. Dang

  • Inductively coupled plasma-induced etch damage of GaN p-n junctions

    R. J. Shul;L. Zhang;A. G. Baca;C. G. Willison

  • Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

    J. Han;A. G. Baca;R. J. Shul;C. G. Willison

  • Self-heating study of an AlGaN∕GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

    I. Ahmad;V. Kasisomayajula;M. Holtz;J. M. Berg

  • Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

    B. Luo;J. W. Johnson;F. Ren;K. K. Allums

  • 300°C GaN/AlGaN Heterojunction Bipolar Transistor

    Fan Ren;Cammy R. Abernathy;J. M. Van Hove;P. P. Chow

  • Al-rich AlGaN based transistors

    Albert G. Baca;Andrew M. Armstrong;Brianna A. Klein;Andrew A. Allerman

  • Doped contacts for high-longevity optically activated, high gain GaAs photoconductive semiconductor switches

    A. Mar;G.M. Loubriel;F.J. Zutavern;M.W. O'Malley

  • Epitaxially-grown GaN junction field effect transistors

    L. Zhang;L.F. Lester;A.G. Baca;R.J. Shul

  • Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics

    F Ren;C.R Abernathy;J.D MacKenzie;B.P Gila

  • InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

    P. C. Chang;A. G. Baca;N. Y. Li;P. R. Sharps

  • GaN Electronics For High Power, High Temperature Applications

    F. Ren;G. Dang

Frequent Co-Authors

Fan Ren
Fan Ren University of Florida
Stephen J. Pearton
Stephen J. Pearton University of Florida
Andrew A. Allerman
Andrew A. Allerman Sandia National Laboratories
Andrew M. Armstrong
Andrew M. Armstrong Sandia National Laboratories
C. R. Abernathy
C. R. Abernathy University of Florida
John F. Klem
John F. Klem Sandia National Laboratories
Mary H. Crawford
Mary H. Crawford Sandia National Laboratories
Jerry W. Johnson
Jerry W. Johnson IQE (United Kingdom)
Brent P. Gila
Brent P. Gila University of Florida
Xian-An Cao
Xian-An Cao West Virginia University

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