World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
4870
World Ranking
4776
National Ranking
255

Overview

Jerry W. Johnson is affiliated with IQE in the United Kingdom and has contributed extensively to research in agricultural and biological sciences, particularly focusing on plant science and genetics. Their work encompasses a range of topics within the fields of genetics, plant breeding, and molecular biology.

The scientist's primary areas of study include:

  • Agricultural and Biological Sciences
  • Biochemistry, Genetics and Molecular Biology

Subfields of study within this work highlight the emphasis on:

  • Plant Science
  • Genetics
  • Cell Biology
  • Environmental Chemistry
  • Ecology, Evolution, Behavior and Systematics

Jerry W. Johnson's research topics are distributed across various specialized areas such as:

  • Wheat and Barley Genetics and Pathology
  • Genetics and Plant Breeding
  • Mycotoxins in Agriculture and Food
  • Genetic Mapping and Diversity in Plants and Animals
  • Plant Disease Resistance and Genetics
  • Genetic and phenotypic traits in livestock
  • Plant Pathogens and Fungal Diseases

The scientist has published multiple peer-reviewed papers, including notable works like:

  • "Multi-Trait Genomic Prediction of Yield-Related Traits in US Soft Wheat under Variable Water Regimes", 2020, Genes
  • "Characterizing the oligogenic architecture of plant growth phenotypes informs genomic selection approaches in a common wheat population", 2021, BMC Genomics
  • "Approaching 25 years of progress towards Fusarium head blight resistance in southern soft red winter wheat (Triticum aestivum L.)", 2023, Plant Breeding
  • "Profiling of Fusarium head blight resistance QTL haplotypes through molecular markers, genotyping-by-sequencing, and machine learning", 2022, Theoretical and Applied Genetics
  • "A novel adult plant leaf rust resistance gene Lr2K38 mapped on wheat chromosome 1AL", 2020, The Plant Genome

Publication venues where Jerry W. Johnson has contributed frequently include:

  • Journal of Plant Registrations
  • The Plant Genome
  • Genes
  • BMC Genomics
  • Plant Breeding

Collaborations with co-authors have been consistent, with frequent partners being:

  • Stephen A. Harrison
  • Gina Brown-Guedira
  • J. Paul Murphy
  • Mohamed Mergoum
  • Md Ali Babar

The combined contributions across these diverse topics, co-authorships, and publication venues outline Jerry W. Johnson's engagement with advancing genetic and plant science research, especially focusing on wheat genetics and associated disease resistance mechanisms.

Best Publications

  • 12 W/mm AlGaN-GaN HFETs on silicon substrates

    J.W. Johnson;E.L. Piner;A. Vescan;R. Therrien

  • Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

    B. Luo;J. W. Johnson;J. Kim;R. M. Mehandru

  • Semiconductor device-based sensors and methods associated with the same

    Jerry W. Johnson;Edwin L. Piner;Kevin J. Linthicum

  • Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors

    B. S. Kang;H. T. Wang;F. Ren;S. J. Pearton

  • Gallium nitride materials device containing electrode defining layer and methods for forming the same

    Vescan Andrei;D Brown Jeffrey;Jerry W Johnson;Robert J Therrien

  • Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

    B. S. Kang;S. Kim;F. Ren;J. W. Johnson

  • Prostate specific antigen detection using AlGaN∕GaN high electron mobility transistors

    B. S. Kang;H. T. Wang;T. P. Lele;Y. Tseng

  • Gd2O3/GaN metal-oxide-semiconductor field-effect transistor

    J. W. Johnson;B. Luo;F. Ren;B. P. Gila

  • dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

    B. Luo;J. W. Johnson;F. Ren;K. K. Allums

  • GaN electronics for high power, high temperature applications

    S.J. Pearton;F. Ren;A.P. Zhang;G. Dang

  • Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers

    J.W. Johnson;A.P. Zhang;Wen-Ben Luo;Fan Ren

  • Reliability of large periphery GaN-on-Si HFETs

    S. Singhal;T. Li;A. Chaudhari;A.W. Hanson

  • Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage

    A. P. Zhang;J. W. Johnson;F. Ren;J. Han

  • Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

    B.P. Gila;J.W. Johnson;R. Mehandru;B. Luo

  • Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{ m m}$ and $f_{ m T}$

    Dong Seup Lee;Han Wang;Allen Hsu;Mohamed Azize

  • Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

    B. Luo;J. W. Johnson;F. Ren;K. K. Allums

  • pH sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region

    B. S. Kang;H. T. Wang;F. Ren;B. P. Gila

  • Vertical and lateral GaN rectifiers on free-standing GaN substrates

    A. P. Zhang;J. W. Johnson;B. Luo;F. Ren

  • GaN-ON-Si Failure Mechanisms and Reliability Improvements

    S. Singhal;J.C. Roberts;P. Rajagopal;T. Li

  • Electrical detection of kidney injury molecule-1 with AlGaN/GaN high electron mobility transistors

    H. T. Wang;B. S. Kang;F. Ren;S. J. Pearton

  • GaN Electronics For High Power, High Temperature Applications

    F. Ren;G. Dang

Frequent Co-Authors

Fan Ren
Fan Ren University of Florida
Stephen J. Pearton
Stephen J. Pearton University of Florida
Edwin L. Piner
Edwin L. Piner Texas State University
Brent P. Gila
Brent P. Gila University of Florida
C. R. Abernathy
C. R. Abernathy University of Florida
Kevin J. Linthicum
Kevin J. Linthicum MACOM (United States)
Andrei Vescan
Andrei Vescan RWTH Aachen University
Albert G. Baca
Albert G. Baca Sandia National Laboratories
Ji Hyun Kim
Ji Hyun Kim Seoul National University
A. Y. Polyakov
A. Y. Polyakov National University of Science and Technology

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