World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
7227
World Ranking
3127
National Ranking
1176

Materials Science

D-Index
48
Citations
7233
World Ranking
10922
National Ranking
2567

Overview

Edwin L. Piner is affiliated with Texas State University in the United States, specializing in research primarily within the fields of engineering and materials science. Their work spans across several subfields including materials chemistry, electrical and electronic engineering, mechanics of materials, condensed matter physics, and atomic and molecular physics.

Their research covers a range of topics with a strong emphasis on diamond and carbon-based materials, semiconductor materials and devices, and metal and thin film mechanics. Other areas of focus include GaN-based semiconductor devices and materials, silicon carbide semiconductor technologies, ZnO doping and properties, and Ga2O3 and related materials.

Recent publications by Edwin L. Piner include:

  • Integration of GaN and Diamond Using Epitaxial Lateral Overgrowth, 2020, ACS Applied Materials & Interfaces
  • Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer, 2021, ACS Applied Materials & Interfaces
  • Effect of seeding density on the growth of diamond films by hot-filament chemical vapor deposition from sparse to dense range, 2021, Journal of Applied Physics
  • Diamond deposition on AlN using Q-carbon interlayer through overcoming the substrate limitations, 2024, Carbon
  • Effect of precursor stoichiometry on morphology, phase purity, and texture formation of hot filament CVD diamond films grown on Si (100) substrate, 2020, Journal of Materials Science Materials in Electronics

Frequently publishing venues for Piner include:

  • ACS Applied Materials & Interfaces
  • Journal of Applied Physics
  • Carbon
  • Journal of Materials Science
  • Journal of Crystal Growth

Edwin L. Piner has collaborated frequently with several co-authors, among them:

  • M. Holtz
  • Jonathan Anderson
  • K. C. Anupam
  • Anwar Siddique
  • Rony Saha

Best Publications

  • Phase separation in InGaN grown by metalorganic chemical vapor deposition

    N. A. El-Masry;E. L. Piner;S. X. Liu;S. M. Bedair

  • Semiconductor Material Having a Compositionally-Graded Transition Layer

    T. Warren Weeks;Edwin L. Piner;Thomas Gehrke;Kevin J. Linthicum

  • 12 W/mm AlGaN-GaN HFETs on silicon substrates

    J.W. Johnson;E.L. Piner;A. Vescan;R. Therrien

  • Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

    J.W. Chung;J.C. Roberts;E.L. Piner;T. Palacios

  • Gallium nitride material devices including backside vias

    Weeks Warren;Piner Edwin;Borges Ricardo;Linthicum Kevin

  • A comparative study of surface passivation on AlGaN/GaN HEMTs

    W Lu;V Kumar;R Schwindt;E Piner

  • Effect of hydrogen on the indium incorporation in InGaN epitaxial films

    E. L. Piner;M. K. Behbehani;N. A. El-Masry;F. G. McIntosh

  • Semiconductor device-based sensors and methods associated with the same

    Jerry W. Johnson;Edwin L. Piner;Kevin J. Linthicum

  • Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors

    B. S. Kang;H. T. Wang;F. Ren;S. J. Pearton

  • AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon ( 1 1 1 ) substrates

    J.D Brown;Ric Borges;Edwin Piner;Andrei Vescan

  • Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

    B. S. Kang;S. Kim;F. Ren;J. W. Johnson

  • Prostate specific antigen detection using AlGaN∕GaN high electron mobility transistors

    B. S. Kang;H. T. Wang;T. P. Lele;Y. Tseng

  • Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices

    Luke Yates;Jonathan Anderson;Xing Gu;Cathy Lee

  • Electrical Detection of Deoxyribonucleic Acid Hybridization With AlGaN/GaN High Electron Mobility Transistors

    ByoungSam Kang;S. J. Pearton;J. J. Chen;F. Ren

  • DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration

    Wu Lu;V. Kumar;E.L. Piner;I. Adesida

  • Growth and characterization of AlInGaN quaternary alloys

    F. G. McIntosh;K. S. Boutros;J. C. Roberts;S. M. Bedair

  • Reliability of large periphery GaN-on-Si HFETs

    S. Singhal;T. Li;A. Chaudhari;A.W. Hanson

  • Fast electrical detection of Hg(II) ions with AlGaN∕GaN high electron mobility transistors

    Hung-Ta Wang;B. S. Kang;T. F. Chancellor;T. P. Lele

  • Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor deposition

    M. K. Behbehani;E. L. Piner;S. X. Liu;N. A. El-Masry

  • Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

    J.W. Chung;Jae-kyu Lee;E.L. Piner;T. Palacios

Frequent Co-Authors

Kevin J. Linthicum
Kevin J. Linthicum MACOM (United States)
Stephen J. Pearton
Stephen J. Pearton University of Florida
Salah M. Bedair
Salah M. Bedair North Carolina State University
Fan Ren
Fan Ren University of Florida
Mark Holtz
Mark Holtz Texas State University
Brent P. Gila
Brent P. Gila University of Florida
Andrei Vescan
Andrei Vescan RWTH Aachen University
Ilesanmi Adesida
Ilesanmi Adesida University of Illinois at Urbana-Champaign
Samuel Graham
Samuel Graham Georgia Institute of Technology

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For those interested in Electronics and Electrical Engineering, exploring related online degrees can open up diverse career opportunities. Many reputable institutions offer flexible learning options, including online schools with multiple start dates. This flexibility allows students to begin their studies at various times throughout the year, accommodating different schedules and commitments.

In addition to full degrees, shorter options like certificate programs that pay well provide an accelerated path to gaining industry-relevant skills. These certificates can boost employability in specialized areas or support career shifts without the time commitment of a traditional degree.

For those who identify as introverts or prefer roles that emphasize independent work, there are many suitable professions in the electrical and electronics fields. Exploring introvert jobs can help align personal working styles with career choices, leading to greater job satisfaction and success.

Project management skills are also highly valuable in engineering contexts. Pursuing an accelerated online project management degree can prepare students to lead complex projects efficiently, enhancing career advancement opportunities in technical industries.

Best Scientists Citing Edwin L. Piner

Trending Scientists

Recently Published Articles