World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
7227
World Ranking
3127
National Ranking
1177

Materials Science

D-Index
48
Citations
7233
World Ranking
10920
National Ranking
2564

Edwin L. Piner publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Edwin L. Piner sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 181 publications — 23rd percentile

23% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Edwin L. Piner D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Edwin L. Piner sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 48 D-Index — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Edwin L. Piner is affiliated with Texas State University in the United States, specializing in research primarily within the fields of engineering and materials science. Their work spans across several subfields including materials chemistry, electrical and electronic engineering, mechanics of materials, condensed matter physics, and atomic and molecular physics.

Their research covers a range of topics with a strong emphasis on diamond and carbon-based materials, semiconductor materials and devices, and metal and thin film mechanics. Other areas of focus include GaN-based semiconductor devices and materials, silicon carbide semiconductor technologies, ZnO doping and properties, and Ga2O3 and related materials.

Recent publications by Edwin L. Piner include:

  • Integration of GaN and Diamond Using Epitaxial Lateral Overgrowth, 2020, ACS Applied Materials & Interfaces
  • Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer, 2021, ACS Applied Materials & Interfaces
  • Effect of seeding density on the growth of diamond films by hot-filament chemical vapor deposition from sparse to dense range, 2021, Journal of Applied Physics
  • Diamond deposition on AlN using Q-carbon interlayer through overcoming the substrate limitations, 2024, Carbon
  • Effect of precursor stoichiometry on morphology, phase purity, and texture formation of hot filament CVD diamond films grown on Si (100) substrate, 2020, Journal of Materials Science Materials in Electronics

Frequently publishing venues for Piner include:

  • ACS Applied Materials & Interfaces
  • Journal of Applied Physics
  • Carbon
  • Journal of Materials Science
  • Journal of Crystal Growth

Edwin L. Piner has collaborated frequently with several co-authors, among them:

  • M. Holtz
  • Jonathan Anderson
  • K. C. Anupam
  • Anwar Siddique
  • Rony Saha

Best Publications

  • Phase separation in InGaN grown by metalorganic chemical vapor deposition

    N. A. El-Masry;E. L. Piner;S. X. Liu;S. M. Bedair

  • Semiconductor Material Having a Compositionally-Graded Transition Layer

    T. Warren Weeks;Edwin L. Piner;Thomas Gehrke;Kevin J. Linthicum

  • 12 W/mm AlGaN-GaN HFETs on silicon substrates

    J.W. Johnson;E.L. Piner;A. Vescan;R. Therrien

  • Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

    J.W. Chung;J.C. Roberts;E.L. Piner;T. Palacios

  • Gallium nitride material devices including backside vias

    Weeks Warren;Piner Edwin;Borges Ricardo;Linthicum Kevin

  • A comparative study of surface passivation on AlGaN/GaN HEMTs

    W Lu;V Kumar;R Schwindt;E Piner

  • Effect of hydrogen on the indium incorporation in InGaN epitaxial films

    E. L. Piner;M. K. Behbehani;N. A. El-Masry;F. G. McIntosh

  • Semiconductor device-based sensors and methods associated with the same

    Jerry W. Johnson;Edwin L. Piner;Kevin J. Linthicum

  • Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors

    B. S. Kang;H. T. Wang;F. Ren;S. J. Pearton

  • AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon ( 1 1 1 ) substrates

    J.D Brown;Ric Borges;Edwin Piner;Andrei Vescan

  • Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

    B. S. Kang;S. Kim;F. Ren;J. W. Johnson

  • Prostate specific antigen detection using AlGaN∕GaN high electron mobility transistors

    B. S. Kang;H. T. Wang;T. P. Lele;Y. Tseng

  • Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices

    Luke Yates;Jonathan Anderson;Xing Gu;Cathy Lee

  • Electrical Detection of Deoxyribonucleic Acid Hybridization With AlGaN/GaN High Electron Mobility Transistors

    ByoungSam Kang;S. J. Pearton;J. J. Chen;F. Ren

  • DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration

    Wu Lu;V. Kumar;E.L. Piner;I. Adesida

  • Growth and characterization of AlInGaN quaternary alloys

    F. G. McIntosh;K. S. Boutros;J. C. Roberts;S. M. Bedair

  • Reliability of large periphery GaN-on-Si HFETs

    S. Singhal;T. Li;A. Chaudhari;A.W. Hanson

  • Fast electrical detection of Hg(II) ions with AlGaN∕GaN high electron mobility transistors

    Hung-Ta Wang;B. S. Kang;T. F. Chancellor;T. P. Lele

  • Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor deposition

    M. K. Behbehani;E. L. Piner;S. X. Liu;N. A. El-Masry

  • Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

    J.W. Chung;Jae-kyu Lee;E.L. Piner;T. Palacios

Frequent Co-Authors

Kevin J. Linthicum
Kevin J. Linthicum MACOM (United States)
Stephen J. Pearton
Stephen J. Pearton University of Florida
Salah M. Bedair
Salah M. Bedair North Carolina State University
Fan Ren
Fan Ren University of Florida
Mark Holtz
Mark Holtz Texas State University
Brent P. Gila
Brent P. Gila University of Florida
Andrei Vescan
Andrei Vescan RWTH Aachen University
Ilesanmi Adesida
Ilesanmi Adesida University of Illinois at Urbana-Champaign
Samuel Graham
Samuel Graham Georgia Institute of Technology

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