His primary scientific interests are in Optoelectronics, Raman spectroscopy, Epitaxy, Analytical chemistry and Molecular beam epitaxy. His study in Wide-bandgap semiconductor, Superlattice, Ultraviolet and Light-emitting diode is carried out as part of his Optoelectronics studies. His work deals with themes such as Spectral line and Chemical vapor deposition, which intersect with Raman spectroscopy.
His work carried out in the field of Epitaxy brings together such families of science as Sapphire, Substrate, Terahertz radiation and Monoclinic crystal system. He combines subjects such as Carbon and Silicon with his study of Analytical chemistry. His work investigates the relationship between Molecular beam epitaxy and topics such as Phonon that intersect with problems in Wiedemann–Franz law, Thermal conductivity, Boltzmann equation, Grain boundary and Thermal conduction.
Mark Holtz spends much of his time researching Optoelectronics, Raman spectroscopy, Analytical chemistry, Molecular beam epitaxy and Photoluminescence. His work on Sapphire expands to the thematically related Optoelectronics. The concepts of his Raman spectroscopy study are interwoven with issues in Phonon, Condensed matter physics, Molecular physics and Silicon.
The Analytical chemistry study combines topics in areas such as Thin film, Carbon, Thermal conductivity and Diamond. His studies in Molecular beam epitaxy integrate themes in fields like Absorption and Reflection high-energy electron diffraction. His Photoluminescence research incorporates themes from Luminescence, Heterojunction, Dopant, Atomic physics and Cadmium telluride photovoltaics.
His main research concerns Optoelectronics, Chemical vapor deposition, Diamond, Photoluminescence and Cadmium telluride photovoltaics. His Optoelectronics research is multidisciplinary, incorporating perspectives in Spectroscopy, Transistor and Raman spectroscopy. His study on Raman spectroscopy is mostly dedicated to connecting different topics, such as Phonon.
His Chemical vapor deposition research integrates issues from Etching, Metalorganic vapour phase epitaxy and Polycrystalline diamond. His research on Diamond also deals with topics like
Optoelectronics, Photoluminescence, Analytical chemistry, Cadmium telluride photovoltaics and Raman spectroscopy are his primary areas of study. His work in Optoelectronics is not limited to one particular discipline; it also encompasses Spectroscopy. His Photoluminescence study also includes fields such as
He has included themes like Electrical contacts, Thermal conductivity, Temperature cycling and Silicon in his Analytical chemistry study. His research integrates issues of Layer, Common emitter and Grain boundary in his study of Cadmium telluride photovoltaics. The various areas that Mark Holtz examines in his Raman spectroscopy study include Wafer, Chemical vapor deposition, Diamond, Stress relaxation and Ultraviolet.
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HIGH QUALITY GAN GROWN ON SI(111) BY GAS SOURCE MOLECULAR BEAM EPITAXY WITH AMMONIA
S. A. Nikishin;N. N. Faleev;V. G. Antipov;S. Francoeur.
Applied Physics Letters (1999)
Vibrational properties of AlN grown on (111)-oriented silicon
T. Prokofyeva;M. Seon;J. Vanbuskirk;M. Holtz.
Physical Review B (2001)
Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates
Yong Zhao;Joon Hwan Lee;Yanhan Zhu;M. Nazari.
Journal of Applied Physics (2012)
Thermal conductivity in metallic nanostructures at high temperature: Electrons, phonons, and the Wiedemann-Franz law
N. Stojanovic;D. H. S. Maithripala;J. M. Berg;M. Holtz.
Physical Review B (2010)
Enhanced Signal-to-Background Ratios in Voltammetric Measurements Made at Diamond Thin-Film Electrochemical Interfaces.
Jerzy W. Strojek;Michael C. Granger;Greg M. Swain;Tim Dallas.
Analytical Chemistry (1996)
Raman studies of nitrogen incorporation in GaAs1−xNx
T. Prokofyeva;T. Sauncy;M. Seon;M. Holtz.
Applied Physics Letters (1998)
Visible and ultraviolet Raman scattering studies of Si1−xGex alloys
M. Holtz;W. M. Duncan;S. Zollner;R. Liu.
Journal of Applied Physics (2000)
Microfabrication and characterization of teflon AF-coated liquid core waveguide channels in silicon
A. Datta;In-Yong Eom;A. Dhar;P. Kuban.
IEEE Sensors Journal (2003)
Raman Spectroscopy of Carbon Materials
JR Dennison;M. Holtz;G. Swain.
Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H–SiC substrates
I. Ahmad;M. Holtz;N. N. Faleev;H. Temkin.
Journal of Applied Physics (2004)
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