D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 46 Citations 6,327 280 World Ranking 8319 National Ranking 2162

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

His primary scientific interests are in Optoelectronics, Raman spectroscopy, Epitaxy, Analytical chemistry and Molecular beam epitaxy. His study in Wide-bandgap semiconductor, Superlattice, Ultraviolet and Light-emitting diode is carried out as part of his Optoelectronics studies. His work deals with themes such as Spectral line and Chemical vapor deposition, which intersect with Raman spectroscopy.

His work carried out in the field of Epitaxy brings together such families of science as Sapphire, Substrate, Terahertz radiation and Monoclinic crystal system. He combines subjects such as Carbon and Silicon with his study of Analytical chemistry. His work investigates the relationship between Molecular beam epitaxy and topics such as Phonon that intersect with problems in Wiedemann–Franz law, Thermal conductivity, Boltzmann equation, Grain boundary and Thermal conduction.

His most cited work include:

  • HIGH QUALITY GAN GROWN ON SI(111) BY GAS SOURCE MOLECULAR BEAM EPITAXY WITH AMMONIA (195 citations)
  • Vibrational properties of AlN grown on (111)-oriented silicon (180 citations)
  • Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates (134 citations)

What are the main themes of his work throughout his whole career to date?

Mark Holtz spends much of his time researching Optoelectronics, Raman spectroscopy, Analytical chemistry, Molecular beam epitaxy and Photoluminescence. His work on Sapphire expands to the thematically related Optoelectronics. The concepts of his Raman spectroscopy study are interwoven with issues in Phonon, Condensed matter physics, Molecular physics and Silicon.

The Analytical chemistry study combines topics in areas such as Thin film, Carbon, Thermal conductivity and Diamond. His studies in Molecular beam epitaxy integrate themes in fields like Absorption and Reflection high-energy electron diffraction. His Photoluminescence research incorporates themes from Luminescence, Heterojunction, Dopant, Atomic physics and Cadmium telluride photovoltaics.

He most often published in these fields:

  • Optoelectronics (44.17%)
  • Raman spectroscopy (20.86%)
  • Analytical chemistry (19.63%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (44.17%)
  • Chemical vapor deposition (11.04%)
  • Diamond (11.04%)

In recent papers he was focusing on the following fields of study:

His main research concerns Optoelectronics, Chemical vapor deposition, Diamond, Photoluminescence and Cadmium telluride photovoltaics. His Optoelectronics research is multidisciplinary, incorporating perspectives in Spectroscopy, Transistor and Raman spectroscopy. His study on Raman spectroscopy is mostly dedicated to connecting different topics, such as Phonon.

His Chemical vapor deposition research integrates issues from Etching, Metalorganic vapour phase epitaxy and Polycrystalline diamond. His research on Diamond also deals with topics like

  • Stress that intertwine with fields like Gallium nitride,
  • Silicon that intertwine with fields like Thermal conductivity and Composite material. The study incorporates disciplines such as Open-circuit voltage, Luminescence, Heterojunction, Excitation and Electrical resistivity and conductivity in addition to Photoluminescence.

Between 2014 and 2021, his most popular works were:

  • Self-Heating Profile in an AlGaN/GaN Heterojunction Field-Effect Transistor Studied by Ultraviolet and Visible Micro-Raman Spectroscopy (24 citations)
  • Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer (13 citations)
  • Electrical and optical characterization of CdTe solar cells with CdS and CdSe buffers—A comparative study (12 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

Optoelectronics, Photoluminescence, Analytical chemistry, Cadmium telluride photovoltaics and Raman spectroscopy are his primary areas of study. His work in Optoelectronics is not limited to one particular discipline; it also encompasses Spectroscopy. His Photoluminescence study also includes fields such as

  • Open-circuit voltage, which have a strong connection to Thin film solar cell, Intensity and Luminescence,
  • Excitation together with Doping, Heterojunction, Electron capture, Carrier lifetime and Atomic physics.

He has included themes like Electrical contacts, Thermal conductivity, Temperature cycling and Silicon in his Analytical chemistry study. His research integrates issues of Layer, Common emitter and Grain boundary in his study of Cadmium telluride photovoltaics. The various areas that Mark Holtz examines in his Raman spectroscopy study include Wafer, Chemical vapor deposition, Diamond, Stress relaxation and Ultraviolet.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

HIGH QUALITY GAN GROWN ON SI(111) BY GAS SOURCE MOLECULAR BEAM EPITAXY WITH AMMONIA

S. A. Nikishin;N. N. Faleev;V. G. Antipov;S. Francoeur.
Applied Physics Letters (1999)

293 Citations

Vibrational properties of AlN grown on (111)-oriented silicon

T. Prokofyeva;M. Seon;J. Vanbuskirk;M. Holtz.
Physical Review B (2001)

209 Citations

Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates

Yong Zhao;Joon Hwan Lee;Yanhan Zhu;M. Nazari.
Journal of Applied Physics (2012)

196 Citations

Thermal conductivity in metallic nanostructures at high temperature: Electrons, phonons, and the Wiedemann-Franz law

N. Stojanovic;D. H. S. Maithripala;J. M. Berg;M. Holtz.
Physical Review B (2010)

192 Citations

Enhanced Signal-to-Background Ratios in Voltammetric Measurements Made at Diamond Thin-Film Electrochemical Interfaces.

Jerzy W. Strojek;Michael C. Granger;Greg M. Swain;Tim Dallas.
Analytical Chemistry (1996)

176 Citations

Raman studies of nitrogen incorporation in GaAs1−xNx

T. Prokofyeva;T. Sauncy;M. Seon;M. Holtz.
Applied Physics Letters (1998)

145 Citations

Visible and ultraviolet Raman scattering studies of Si1−xGex alloys

M. Holtz;W. M. Duncan;S. Zollner;R. Liu.
Journal of Applied Physics (2000)

134 Citations

Microfabrication and characterization of teflon AF-coated liquid core waveguide channels in silicon

A. Datta;In-Yong Eom;A. Dhar;P. Kuban.
IEEE Sensors Journal (2003)

131 Citations

Raman Spectroscopy of Carbon Materials

JR Dennison;M. Holtz;G. Swain.
Spectroscopy (1996)

118 Citations

Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H–SiC substrates

I. Ahmad;M. Holtz;N. N. Faleev;H. Temkin.
Journal of Applied Physics (2004)

117 Citations

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