Mark Holtz

Mark Holtz publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Mark Holtz sits on this spectrum.

Mark Holtz D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Mark Holtz sits on this spectrum.

Overview

Best Publications

• Thermal conductivity in metallic nanostructures at high temperature: Electrons, phonons, and the Wiedemann-Franz law

  N. Stojanovic;D. H. S. Maithripala;J. M. Berg;M. Holtz

  304
  Citations

• HIGH QUALITY GAN GROWN ON SI(111) BY GAS SOURCE MOLECULAR BEAM EPITAXY WITH AMMONIA

  S. A. Nikishin;N. N. Faleev;V. G. Antipov;S. Francoeur

  301
  Citations

• Vibrational properties of AlN grown on (111)-oriented silicon

  T. Prokofyeva;M. Seon;J. Vanbuskirk;M. Holtz

  245
  Citations

• Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates

  Yong Zhao;Joon Hwan Lee;Yanhan Zhu;M. Nazari

  234
  Citations

• Enhanced Signal-to-Background Ratios in Voltammetric Measurements Made at Diamond Thin-Film Electrochemical Interfaces.

  Jerzy W. Strojek;Michael C. Granger;Greg M. Swain;Tim Dallas

  177
  Citations

• Tunable dual-band terahertz metamaterial bandpass filters

  Yanhan Zhu;Subash Vegesna;Yong Zhao;Vladimir Kuryatkov

  151
  Citations

• Raman studies of nitrogen incorporation in GaAs1−xNx

  T. Prokofyeva;T. Sauncy;M. Seon;M. Holtz

  148
  Citations

• Raman Spectroscopy of Carbon Materials

  JR Dennison;M. Holtz;G. Swain

  146
  Citations

• Visible and ultraviolet Raman scattering studies of Si1−xGex alloys

  M. Holtz;W. M. Duncan;S. Zollner;R. Liu

  142
  Citations

• Microfabrication and characterization of teflon AF-coated liquid core waveguide channels in silicon

  A. Datta;In-Yong Eom;A. Dhar;P. Kuban

  136
  Citations

• Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H–SiC substrates

  I. Ahmad;M. Holtz;N. N. Faleev;H. Temkin

  134
  Citations

• Effect of substrate orientation on terahertz optical transmission through VO_2 thin films and application to functional antireflection coatings

  Yanhan Zhu;Yong Zhao;Mark Holtz;Zhaoyang Fan

  130
  Citations

• Si-doped AlxGa1−xN(0.56⩽×⩽1) layers grown by molecular beam epitaxy with ammonia

  B. Borisov;V. Kuryatkov;Yu. Kudryavtsev;R. Asomoza

  122
  Citations

• Influence of defects on structural and electrical properties of VO2 thin films

  Changhong Chen;Changhong Chen;Yong Zhao;Xuan Pan;V. Kuryatkov

  119
  Citations

• Self-heating study of an AlGaN∕GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

  I. Ahmad;V. Kasisomayajula;M. Holtz;J. M. Berg

  116
  Citations

• AlN/AlGaInN superlattice light-emitting diodes at 280 nm

  G. Kipshidze;V. Kuryatkov;K. Zhu;B. Borisov

  116
  Citations

• A two-stage discrete peristaltic micropump

  J.M. Berg;R. Anderson;M. Anaya;B. Lahlouh

  113
  Citations

• AlGaInN-based ultraviolet light-emitting diodes grown on Si 111

  G. Kipshidze;V. Kuryatkov;B. Borisov;M. Holtz

  113
  Citations

• VO2 multidomain heteroepitaxial growth and terahertz transmission modulation

  Changhong Chen;Changhong Chen;Yanhan Zhu;Yong Zhao;Joon Hwan Lee

  106
  Citations

• High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia

  S. A. Nikishin;V. G. Antipov;S. Francoeur;N. N. Faleev

  101
  Citations

• Vibrational properties of AlN grown on 111 -oriented siliconPHYSICAL REVIEW B, VOLUME 63, 125313

  S. Zollner;H. Temkin;N. Faleev;S. Nikishin

  0
  Citations