Mark Holtz

Overview

Best Publications

• Thermal conductivity in metallic nanostructures at high temperature: Electrons, phonons, and the Wiedemann-Franz law

  N. Stojanovic;D. H. S. Maithripala;J. M. Berg;M. Holtz

  304
  Citations

• HIGH QUALITY GAN GROWN ON SI(111) BY GAS SOURCE MOLECULAR BEAM EPITAXY WITH AMMONIA

  S. A. Nikishin;N. N. Faleev;V. G. Antipov;S. Francoeur

  301
  Citations

• Vibrational properties of AlN grown on (111)-oriented silicon

  T. Prokofyeva;M. Seon;J. Vanbuskirk;M. Holtz

  245
  Citations

• Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates

  Yong Zhao;Joon Hwan Lee;Yanhan Zhu;M. Nazari

  234
  Citations

• Enhanced Signal-to-Background Ratios in Voltammetric Measurements Made at Diamond Thin-Film Electrochemical Interfaces.

  Jerzy W. Strojek;Michael C. Granger;Greg M. Swain;Tim Dallas

  177
  Citations

• Tunable dual-band terahertz metamaterial bandpass filters

  Yanhan Zhu;Subash Vegesna;Yong Zhao;Vladimir Kuryatkov

  151
  Citations

• Raman studies of nitrogen incorporation in GaAs1−xNx

  T. Prokofyeva;T. Sauncy;M. Seon;M. Holtz

  148
  Citations

• Raman Spectroscopy of Carbon Materials

  JR Dennison;M. Holtz;G. Swain

  146
  Citations

• Visible and ultraviolet Raman scattering studies of Si1−xGex alloys

  M. Holtz;W. M. Duncan;S. Zollner;R. Liu

  142
  Citations

• Microfabrication and characterization of teflon AF-coated liquid core waveguide channels in silicon

  A. Datta;In-Yong Eom;A. Dhar;P. Kuban

  136
  Citations

• Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H–SiC substrates

  I. Ahmad;M. Holtz;N. N. Faleev;H. Temkin

  134
  Citations

• Effect of substrate orientation on terahertz optical transmission through VO_2 thin films and application to functional antireflection coatings

  Yanhan Zhu;Yong Zhao;Mark Holtz;Zhaoyang Fan

  130
  Citations

• Si-doped AlxGa1−xN(0.56⩽×⩽1) layers grown by molecular beam epitaxy with ammonia

  B. Borisov;V. Kuryatkov;Yu. Kudryavtsev;R. Asomoza

  122
  Citations

• Influence of defects on structural and electrical properties of VO2 thin films

  Changhong Chen;Changhong Chen;Yong Zhao;Xuan Pan;V. Kuryatkov

  119
  Citations

• Self-heating study of an AlGaN∕GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

  I. Ahmad;V. Kasisomayajula;M. Holtz;J. M. Berg

  116
  Citations

• AlN/AlGaInN superlattice light-emitting diodes at 280 nm

  G. Kipshidze;V. Kuryatkov;K. Zhu;B. Borisov

  116
  Citations

• A two-stage discrete peristaltic micropump

  J.M. Berg;R. Anderson;M. Anaya;B. Lahlouh

  113
  Citations

• AlGaInN-based ultraviolet light-emitting diodes grown on Si 111

  G. Kipshidze;V. Kuryatkov;B. Borisov;M. Holtz

  113
  Citations

• VO2 multidomain heteroepitaxial growth and terahertz transmission modulation

  Changhong Chen;Changhong Chen;Yanhan Zhu;Yong Zhao;Joon Hwan Lee

  106
  Citations

• High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia

  S. A. Nikishin;V. G. Antipov;S. Francoeur;N. N. Faleev

  101
  Citations

• Vibrational properties of AlN grown on 111 -oriented siliconPHYSICAL REVIEW B, VOLUME 63, 125313

  S. Zollner;H. Temkin;N. Faleev;S. Nikishin

  0
  Citations