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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 34 5693 5465 1938 1807 260 8151

Michael Wraback publications per year

The chart shows the history of publications by Michael Wraback between 1989 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Michael Wraback published across 37 years, from 1989 to 2025, averaging 8.3 papers a year. Output peaked at 26 publications in 2007. 10 of the 307 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1989 to 2025. Vertical axis: number of publications, 0 to 26. Peak 26 publications in 2007. 1989: 1 publication 1990: 2 publications 1991: 1 publication 1992: 3 publications 1993: 9 publications 1994: 7 publications 1995: 2 publications 1996: 1 publication 1997: 1 publication 1998: 3 publications 1999: 7 publications 2000: 9 publications 2001: 5 publications 2002: 9 publications 2003: 8 publications 2004: 8 publications 2005: 10 publications 2006: 18 publications 2007: 26 publications 2008: 25 publications 2009: 18 publications 2010: 13 publications 2011: 24 publications 2012: 25 publications 2013: 26 publications 2014: 14 publications 2015: 3 publications 2016: 6 publications 2017: 2 publications 2018: 1 publication 2019: 3 publications 2020: 1 publication 2021: 1 publication 2022: 0 publications 2023: 5 publications 2024: 6 publications 2025: 4 publications
1989 2025

307 publications in total across all disciplines

View publications per year as a table
Michael Wraback: publications per year, 1989 to 2025
Year Publications
1989 1
1990 2
1991 1
1992 3
1993 9
1994 7
1995 2
1996 1
1997 1
1998 3
1999 7
2000 9
2001 5
2002 9
2003 8
2004 8
2005 10
2006 18
2007 26
2008 25
2009 18
2010 13
2011 24
2012 25
2013 26
2014 14
2015 3
2016 6
2017 2
2018 1
2019 3
2020 1
2021 1
2022 0
2023 5
2024 6
2025 4
Total 307
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Michael Wraback publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Michael Wraback sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 254–273 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 260 publications — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366 260
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Michael Wraback D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Michael Wraback sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 34 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 34 D-Index — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244 34
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Research.com Recognitions

  • 2013 - OSA Fellows For outstanding contributions to the understanding of carrier dynamics in compound semiconductors using innovative optical characterization techniques.
  • 2011 - Fellow of American Physical Society (APS) Citation For contributions to the understanding of the physics of carrier dynamics and transport in semiconductor materials and devices for optoelectronic applications

Overview

Michael Wraback is affiliated with the United States Army Research Laboratory in the United States. Their research spans multiple disciplines within materials science, engineering, and physics and astronomy, with notable contributions in semiconductor materials and devices.

The main fields of study for Michael Wraback include:

  • Materials Science
  • Engineering
  • Physics and Astronomy

Subfields of their research cover:

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Mechanics of Materials

The primary topics Michael Wraback has focused on involve:

  • Ga2O3 and related materials
  • GaN-based semiconductor devices and materials
  • Thin-Film Transistor Technologies
  • ZnO doping and properties
  • Silicon Nanostructures and Photoluminescence
  • Silicon Carbide Semiconductor Technologies
  • Metal and Thin Film Mechanics

Frequent publication venues include:

  • Applied Physics Letters
  • Journal of Electronic Materials
  • ECS Meeting Abstracts
  • physica status solidi (b)
  • IEEE Journal of Quantum Electronics

Recent published papers by Michael Wraback feature work such as:

  • Enhanced far ultraviolet spectral response and gain in SiC avalanche photodiodes (2021, Applied Physics Letters)
  • Formation of Spontaneous Lateral Heterostructures in High Al content AlxGa1−xN Alloys Grown by High-Temperature Plasma-Assisted Molecular Beam Epitaxy (2024, Journal of Electronic Materials)
  • Ultrafast excitonic radiative recombination in Al-rich semipolar AlGaN quantum wells for far-UVC emitters (2023, Applied Physics Letters)
  • Spatial Nonuniformity of Photoresponse in SiC UV Avalanche Photodiodes Operating in Linear and Geiger Mode (2024, ECS Meeting Abstracts)
  • Time-resolved cathodoluminescence measurement of the effects of α-particle-related damage on minority hole lifetime in free-standing n-GaN (2024, Applied Physics Letters)

Collaborations have been frequent with coauthors including:

  • Anand V. Sampath
  • Gregory A. Garrett
  • Jonathan Schuster
  • LeighAnn S. Larkin
  • Jeremy Smith

Michael Wraback has received recognition in the professional community through awards such as:

  • OSA Fellows in 2013 for contributions to the understanding of carrier dynamics in compound semiconductors using optical characterization techniques
  • Fellow of the American Physical Society (APS) in 2011 for work on carrier dynamics and transport physics in semiconductor materials and devices for optoelectronic applications

Best Publications

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (0112) sapphire by metalorganic chemical vapor deposition

    C. R. Gorla;N. W. Emanetoglu;S. Liang;W. E. Mayo

  • Ultraviolet detectors based on epitaxial ZnO films grown by MOVCD

    Y. Liu;C. R. Gorla;S. Liang;N. Emanetoglu

  • AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

    Max Shatalov;Wenhong Sun;Alex Lunev;Xuhong Hu

  • Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

    E. H. Steenbergen;B. C. Connelly;G. D. Metcalfe;H. Shen

  • In-polar InN grown by plasma-assisted molecular beam epitaxy

    Chad S. Gallinat;Gregor Koblmüller;Jay S. Brown;Sarah Bernardis

  • High power AlGaN ultraviolet light emitters

    Max Shatalov;Wenhong Sun;Rakesh Jain;Alex Lunev

  • 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

    James R. Grandusky;Jianfeng Chen;Shawn R. Gibb;Mark C. Mendrick

  • High contrast, ultrafast optically addressed ultraviolet light modulator based upon optical anisotropy in ZnO films grown on R-plane sapphire

    M. Wraback;H. Shen;S. Liang;C. R. Gorla

  • Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence

    Blair C. Connelly;Grace D. Metcalfe;Hongen Shen;Michael Wraback

  • High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance

    James R. Grandusky;Shawn R. Gibb;Mark C. Mendrick;Craig Moe

  • GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

    J. B. Limb;D. Yoo;J. H. Ryou;W. Lee

  • Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy

    G. Koblmüller;C. S. Gallinat;S. Bernardis;J. S. Speck

  • Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN

    M. Wraback;H. Shen;J. C. Carrano;T. Li

  • Optically Modulated Multiband Terahertz Perfect Absorber

    Huseyin R Seren;George R Keiser;Lingyue Cao;Jingdi Zhang

  • Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates

    Thomas Wunderer;Christopher L. Chua;Zhihong Yang;John E. Northrup

  • Excitation wavelength dependence of terahertz emission from InN and InAs

    Grace D. Chern;Eric D. Readinger;Hongen Shen;Michael Wraback

  • Optically pumped UV lasers grown on bulk AlN substrates

    T. Wunderer;C. L. Chua;J. E. Northrup;Z. Yang

  • Nonlinear terahertz metamaterial perfect absorbers using GaAs [Invited]

    Xiaoguang Zhao;Jingdi Zhang;Kebin Fan;Guangwu Duan

  • Optically tunable metamaterial perfect absorber on highly flexible substrate

    Xiaoguang Zhao;Kebin Fan;Jingdi Zhang;Huseyin R. Seren

  • Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN

    M. Wraback;H. Shen;J. C. Carrano;C. J. Collins

Frequent Co-Authors

James S. Speck
James S. Speck University of California, Santa Barbara
Yicheng Lu
Yicheng Lu Rutgers, The State University of New Jersey
Joe C. Campbell
Joe C. Campbell University of Virginia
Gregor Koblmüller
Gregor Koblmüller Technical University of Munich
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
Richard D. Averitt
Richard D. Averitt University of California, San Diego
maxim shatalov
maxim shatalov CVD Equipment Corporation

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