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Materials Science

D-Index
51
Citations
10707
World Ranking
9831
National Ranking
2372

Overview

Ramon Collazo is affiliated with North Carolina State University in the United States. Their research spans multiple disciplines including Engineering, Physics and Astronomy, and Materials Science, with a significant number of publications in these fields emphasizing semiconductor materials and devices.

Their work includes a strong focus on subfields such as Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, and Mechanics of Materials. This multidisciplinary approach supports research on advanced semiconductor technologies and material properties.

Main topics addressed in Collazo's research are:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • Metal and Thin Film Mechanics
  • ZnO doping and properties
  • Silicon Carbide Semiconductor Technologies
  • Acoustic Wave Resonator Technologies

Frequent publication venues for their work include:

  • Applied Physics Letters
  • Journal of Applied Physics
  • Applied Physics Express
  • physica status solidi (a)
  • Semiconductor Science and Technology

Notable recent papers authored or coauthored by Collazo include:

  • The 2020 UV emitter roadmap, 2020, Journal of Physics D Applied Physics
  • High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing, 2021, Applied Physics Letters
  • High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates, 2020, Applied Physics Letters
  • The role of chemical potential in compensation control in Si:AlGaN, 2020, Journal of Applied Physics
  • High electron mobility in AlN:Si by point and extended defect management, 2022, Journal of Applied Physics

Ramon Collazo collaborates frequently with researchers such as Zlatko Sitar, Pramod Reddy, Ronny Kirste, Seiji Mita, and Dolar Khachariya. These collaborations focus on semiconductor research and material science, contributing to a significant body of work in electronic and optical materials.

Best Publications

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • The 2020 UV emitter roadmap

    Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  • Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

    Ramón Collazo;Seiji Mita;Jinqiao Xie;Anthony Rice

  • On the origin of the 265 nm absorption band in AlN bulk crystals

    Ramón Collazo;Jinqiao Xie;Benjamin E. Gaddy;Zachary Bryan

  • Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

    R. Dalmau;B. Moody;R. Schlesser;S. Mita

  • High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

    Zachary Bryan;Isaac Bryan;Jinqiao Xie;Seiji Mita

  • Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

    Isaac Bryan;Zachary Bryan;Seiji Mita;Anthony Rice

  • Seeded growth of AlN bulk crystals in m- and c-orientation

    P. Lu;R. Collazo;R.F. Dalmau;G. Durkaya

  • Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

    A. Rice;R. Collazo;J. Tweedie;R. Dalmau

  • Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

    S. Mita;R. Collazo;A. Rice;R. F. Dalmau

  • On compensation in Si-doped AlN

    Joshua S. Harris;Jonathon N. Baker;Benjamin E. Gaddy;Isaac Bryan

  • The role of surface kinetics on composition and quality of AlGaN

    Isaac Bryan;Zachary Bryan;Seiji Mita;Anthony Rice

  • Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

    Isaac Bryan;Zachary Bryan;Shun Washiyama;Pramod Reddy

  • Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

    Jinqiao Xie;Seiji Mita;Zachary Bryan;Wei Guo

  • Polarity Control in Group-III Nitrides beyond Pragmatism

    Stefan Mohn;Natalia Stolyarchuk;Natalia Stolyarchuk;Toni Markurt;Ronny Kirste

  • Seeded growth of AlN on N- and Al-polar AlN seeds by physical vapor transport

    Z.G. Herro;D. Zhuang;R. Schlesser;R. Collazo

  • Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

    Benjamin E. Gaddy;Zachary Bryan;Isaac Bryan;Ronny Kirste

  • Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers

    R. Collazo;S. Mita;A. Aleksov;R. Schlesser

  • Electronic Biosensors Based on III-Nitride Semiconductors.

    Ronny Kirste;Nathaniel Rohrbaugh;Isaac Bryan;Zachary Bryan

  • Comparative study of etching high crystalline quality AlN and GaN

    W. Guo;J. Xie;C. Akouala;S. Mita

  • Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers.

    Lujun Huang;Guoqing Li;Alper Gurarslan;Yiling Yu

  • Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

    Felix Kaess;Seiji Mita;Jingqiao Xie;Pramod Reddy

Frequent Co-Authors

Zlatko Sitar
Zlatko Sitar North Carolina State University
Jon-Paul Maria
Jon-Paul Maria Pennsylvania State University
Axel Hoffmann
Axel Hoffmann University of Illinois at Urbana-Champaign
Yoshinao Kumagai
Yoshinao Kumagai Tokyo University of Agriculture and Technology
Michal Bockowski
Michal Bockowski Polish Academy of Sciences
Klaus Thonke
Klaus Thonke University of Ulm
Bo Monemar
Bo Monemar Linköping University
Robert F. Davis
Robert F. Davis Carnegie Mellon University
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Gerd Duscher
Gerd Duscher University of Tennessee at Knoxville

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