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D-Index & Metrics

Materials Science

D-Index
51
Citations
10707
World Ranking
9831
National Ranking
2372

Ramon Collazo publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Ramon Collazo sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 724 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 478 scientists 350–369 publications: 441 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 257 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 316 publications — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Ramon Collazo D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Ramon Collazo sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 451 scientists 44–45 D-Index: 613 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 204 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 118 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 51 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Ramon Collazo is affiliated with North Carolina State University in the United States. Their research spans multiple disciplines including Engineering, Physics and Astronomy, and Materials Science, with a significant number of publications in these fields emphasizing semiconductor materials and devices.

Their work includes a strong focus on subfields such as Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, and Mechanics of Materials. This multidisciplinary approach supports research on advanced semiconductor technologies and material properties.

Main topics addressed in Collazo's research are:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • Metal and Thin Film Mechanics
  • ZnO doping and properties
  • Silicon Carbide Semiconductor Technologies
  • Acoustic Wave Resonator Technologies

Frequent publication venues for their work include:

  • Applied Physics Letters
  • Journal of Applied Physics
  • Applied Physics Express
  • physica status solidi (a)
  • Semiconductor Science and Technology

Notable recent papers authored or coauthored by Collazo include:

  • The 2020 UV emitter roadmap, 2020, Journal of Physics D Applied Physics
  • High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing, 2021, Applied Physics Letters
  • High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates, 2020, Applied Physics Letters
  • The role of chemical potential in compensation control in Si:AlGaN, 2020, Journal of Applied Physics
  • High electron mobility in AlN:Si by point and extended defect management, 2022, Journal of Applied Physics

Ramon Collazo collaborates frequently with researchers such as Zlatko Sitar, Pramod Reddy, Ronny Kirste, Seiji Mita, and Dolar Khachariya. These collaborations focus on semiconductor research and material science, contributing to a significant body of work in electronic and optical materials.

Best Publications

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • The 2020 UV emitter roadmap

    Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  • Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

    Ramón Collazo;Seiji Mita;Jinqiao Xie;Anthony Rice

  • On the origin of the 265 nm absorption band in AlN bulk crystals

    Ramón Collazo;Jinqiao Xie;Benjamin E. Gaddy;Zachary Bryan

  • Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

    R. Dalmau;B. Moody;R. Schlesser;S. Mita

  • High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

    Zachary Bryan;Isaac Bryan;Jinqiao Xie;Seiji Mita

  • Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

    Isaac Bryan;Zachary Bryan;Seiji Mita;Anthony Rice

  • Seeded growth of AlN bulk crystals in m- and c-orientation

    P. Lu;R. Collazo;R.F. Dalmau;G. Durkaya

  • Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

    A. Rice;R. Collazo;J. Tweedie;R. Dalmau

  • Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

    S. Mita;R. Collazo;A. Rice;R. F. Dalmau

  • On compensation in Si-doped AlN

    Joshua S. Harris;Jonathon N. Baker;Benjamin E. Gaddy;Isaac Bryan

  • The role of surface kinetics on composition and quality of AlGaN

    Isaac Bryan;Zachary Bryan;Seiji Mita;Anthony Rice

  • Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

    Isaac Bryan;Zachary Bryan;Shun Washiyama;Pramod Reddy

  • Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

    Jinqiao Xie;Seiji Mita;Zachary Bryan;Wei Guo

  • Polarity Control in Group-III Nitrides beyond Pragmatism

    Stefan Mohn;Natalia Stolyarchuk;Natalia Stolyarchuk;Toni Markurt;Ronny Kirste

  • Seeded growth of AlN on N- and Al-polar AlN seeds by physical vapor transport

    Z.G. Herro;D. Zhuang;R. Schlesser;R. Collazo

  • Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

    Benjamin E. Gaddy;Zachary Bryan;Isaac Bryan;Ronny Kirste

  • Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers

    R. Collazo;S. Mita;A. Aleksov;R. Schlesser

  • Electronic Biosensors Based on III-Nitride Semiconductors.

    Ronny Kirste;Nathaniel Rohrbaugh;Isaac Bryan;Zachary Bryan

  • Comparative study of etching high crystalline quality AlN and GaN

    W. Guo;J. Xie;C. Akouala;S. Mita

  • Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers.

    Lujun Huang;Guoqing Li;Alper Gurarslan;Yiling Yu

  • Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

    Felix Kaess;Seiji Mita;Jingqiao Xie;Pramod Reddy

Frequent Co-Authors

Zlatko Sitar
Zlatko Sitar North Carolina State University
Jon-Paul Maria
Jon-Paul Maria Pennsylvania State University
Axel Hoffmann
Axel Hoffmann University of Illinois at Urbana-Champaign
Yoshinao Kumagai
Yoshinao Kumagai Tokyo University of Agriculture and Technology
Michal Bockowski
Michal Bockowski Polish Academy of Sciences
Klaus Thonke
Klaus Thonke University of Ulm
Bo Monemar
Bo Monemar Linköping University
Robert F. Davis
Robert F. Davis Carnegie Mellon University
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Gerd Duscher
Gerd Duscher University of Tennessee at Knoxville

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