2026 Shigefusa F. Chichibu: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	71	4195	4063	190	187	567	21789

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

4195

4063

190

187

567

21789

Overview

Shigefusa F. Chichibu is affiliated with Tohoku University in Japan and has contributed extensively to research in materials science, engineering, and physics and astronomy. Their scholarly work primarily focuses on the development and characterization of semiconductor materials and devices, with a significant emphasis on GaN-based semiconductors and related compounds.

The main fields of study encompassed in their research include:

Materials Science
Engineering
Physics and Astronomy

The scientist's research spans several subfields such as:

Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry
Electrical and Electronic Engineering
Mechanics of Materials

The specific topics frequently examined in their work include:

GaN-based semiconductor devices and materials
Ga2O3 and related materials
Semiconductor materials and devices
Metal and Thin Film Mechanics
ZnO doping and properties
Semiconductor Quantum Structures and Devices
Photocathodes and Microchannel Plates

Their publication record reflects significant contributions to the following scientific journals:

Journal of Applied Physics
Applied Physics Letters
Applied Physics Express
Japanese Journal of Applied Physics
Scientific Reports

Among the recent papers authored or coauthored by Shigefusa F. Chichibu are:

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam, 2020, Scientific Reports
Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams, 2020, Journal of Applied Physics
Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg, 2021, Applied Physics Letters
Ammonothermal growth of 2 inch long GaN single crystals using an acidic NH₄F mineralizer in a Ag-lined autoclave, 2020, Applied Physics Express
Self-organized micro-light-emitting diode structure for high-speed solar-blind optical wireless communications, 2020, Applied Physics Letters

The scientist collaborates regularly with several frequent co-authors, including:

Kohei Shima
Kazunobu Kojima
Akira Uedono
Shoji Ishibashi
Yoshio Honda

Best Publications

Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

Atsushi Tsukazaki;Akira Ohtomo;Takeyoshi Onuma;Makoto Ohtani

2622
Citations
Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

S. Chichibu;T. Azuhata;T. Sota;S. Nakamura

1664
Citations
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

850
Citations
Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes

Shuji Nakamura;Shigefusa F. Chichibu

745
Citations
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

S. F. Chichibu;A. C. Abare;M. S. Minsky;S. Keller

591
Citations
Luminescences from localized states in InGaN epilayers

S. Chichibu;T. Azuhata;T. Sota;S. Nakamura

551
Citations
Spatially resolved cathodoluminescence spectra of InGaN quantum wells

Shigefusa Chichibu;Kazumi Wada;Shuji Nakamura

511
Citations
Blue Light-Emitting Diode Based on ZnO

Atsushi Tsukazaki;Masashi Kubota;Akira Ohtomo;Takeyoshi Onuma

508
Citations
Nonpolar and Semipolar Group III Nitride-Based Materials

J. S. Speck;S. F. Chichibu

336
Citations
Exciton localization in InGaN quantum well devices

Shigefusa Chichibu;Shigefusa Chichibu;Takayuki Sota;Kazumi Wada;Kazumi Wada;Shuji Nakamura

328
Citations
Biaxial strain dependence of exciton resonance energies in wurtzite GaN

Amane Shikanai;Takashi Azuhata;Takayuki Sota;Shigefusa Chichibu

303
Citations
Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

T. Koida;S. F. Chichibu;A. Uedono;A. Tsukazaki

292
Citations
Nitrogen doped MgxZn1−xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

K. Nakahara;S. Akasaka;H. Yuji;K. Tamura

271
Citations
Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes

Kuniyoshi Okamoto;Hiroaki Ohta;Shigefusa F. Chichibu;Jun Ichihara

257
Citations
Growth and characterization of cubic GaN

H. Okumura;K. Ohta;G. Feuillet;K. Balakrishnan

225
Citations
Excitonic emissions from hexagonal GaN epitaxial layers

Shigefusa Chichibu;T. Azuhata;T. Sota;S. Nakamura

224
Citations
Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure

Takahiro Deguchi;Kaoru Sekiguchi;Atsushi Nakamura;Takayuki Sota

200
Citations
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

S. F. Chichibu;A. Uedono;A. Uedono;T. Onuma;T. Sota

189
Citations
Band gap energies of bulk, thin-film, and epitaxial layers of CuInSe2 and CuGaSe2

S. Chichibu;S. Chichibu;T. Mizutani;K. Murakami;T. Shioda

170
Citations
Optical properties of InGaN quantum wells

S.F Chichibu;A.C Abare;M.P Mack;M.S Minsky

168
Citations