World's Best Scientists 2026 revealed!
Shigefusa F. Chichibu

Shigefusa F. Chichibu

D-Index & Metrics

Materials Science

D-Index
71
Citations
21789
World Ranking
4193
National Ranking
190

Shigefusa F. Chichibu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Shigefusa F. Chichibu sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 567 publications — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Shigefusa F. Chichibu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Shigefusa F. Chichibu sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 71 D-Index — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Shigefusa F. Chichibu is affiliated with Tohoku University in Japan and has contributed extensively to research in materials science, engineering, and physics and astronomy. Their scholarly work primarily focuses on the development and characterization of semiconductor materials and devices, with a significant emphasis on GaN-based semiconductors and related compounds.

The main fields of study encompassed in their research include:

  • Materials Science
  • Engineering
  • Physics and Astronomy

The scientist's research spans several subfields such as:

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Mechanics of Materials

The specific topics frequently examined in their work include:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • Metal and Thin Film Mechanics
  • ZnO doping and properties
  • Semiconductor Quantum Structures and Devices
  • Photocathodes and Microchannel Plates

Their publication record reflects significant contributions to the following scientific journals:

  • Journal of Applied Physics
  • Applied Physics Letters
  • Applied Physics Express
  • Japanese Journal of Applied Physics
  • Scientific Reports

Among the recent papers authored or coauthored by Shigefusa F. Chichibu are:

  • Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam, 2020, Scientific Reports
  • Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams, 2020, Journal of Applied Physics
  • Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg, 2021, Applied Physics Letters
  • Ammonothermal growth of 2 inch long GaN single crystals using an acidic NH4F mineralizer in a Ag-lined autoclave, 2020, Applied Physics Express
  • Self-organized micro-light-emitting diode structure for high-speed solar-blind optical wireless communications, 2020, Applied Physics Letters

The scientist collaborates regularly with several frequent co-authors, including:

  • Kohei Shima
  • Kazunobu Kojima
  • Akira Uedono
  • Shoji Ishibashi
  • Yoshio Honda

Best Publications

  • Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

    Atsushi Tsukazaki;Akira Ohtomo;Takeyoshi Onuma;Makoto Ohtani

  • Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

    S. Chichibu;T. Azuhata;T. Sota;S. Nakamura

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes

    Shuji Nakamura;Shigefusa F. Chichibu

  • Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

    S. F. Chichibu;A. C. Abare;M. S. Minsky;S. Keller

  • Luminescences from localized states in InGaN epilayers

    S. Chichibu;T. Azuhata;T. Sota;S. Nakamura

  • Spatially resolved cathodoluminescence spectra of InGaN quantum wells

    Shigefusa Chichibu;Kazumi Wada;Shuji Nakamura

  • Blue Light-Emitting Diode Based on ZnO

    Atsushi Tsukazaki;Masashi Kubota;Akira Ohtomo;Takeyoshi Onuma

  • Nonpolar and Semipolar Group III Nitride-Based Materials

    J. S. Speck;S. F. Chichibu

  • Exciton localization in InGaN quantum well devices

    Shigefusa Chichibu;Shigefusa Chichibu;Takayuki Sota;Kazumi Wada;Kazumi Wada;Shuji Nakamura

  • Biaxial strain dependence of exciton resonance energies in wurtzite GaN

    Amane Shikanai;Takashi Azuhata;Takayuki Sota;Shigefusa Chichibu

  • Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

    T. Koida;S. F. Chichibu;A. Uedono;A. Tsukazaki

  • Nitrogen doped MgxZn1−xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

    K. Nakahara;S. Akasaka;H. Yuji;K. Tamura

  • Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes

    Kuniyoshi Okamoto;Hiroaki Ohta;Shigefusa F. Chichibu;Jun Ichihara

  • Growth and characterization of cubic GaN

    H. Okumura;K. Ohta;G. Feuillet;K. Balakrishnan

  • Excitonic emissions from hexagonal GaN epitaxial layers

    Shigefusa Chichibu;T. Azuhata;T. Sota;S. Nakamura

  • Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure

    Takahiro Deguchi;Kaoru Sekiguchi;Atsushi Nakamura;Takayuki Sota

  • Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

    S. F. Chichibu;A. Uedono;A. Uedono;T. Onuma;T. Sota

  • Band gap energies of bulk, thin-film, and epitaxial layers of CuInSe2 and CuGaSe2

    S. Chichibu;S. Chichibu;T. Mizutani;K. Murakami;T. Shioda

  • Optical properties of InGaN quantum wells

    S.F Chichibu;A.C Abare;M.P Mack;M.S Minsky

Frequent Co-Authors

Akira Uedono
Akira Uedono University of Tsukuba
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Hajime Okumura
Hajime Okumura National Institute of Advanced Industrial Science and Technology
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Kenji Fujito
Kenji Fujito Mitsubishi Chemical Corporation
Masashi Kawasaki
Masashi Kawasaki University of Tokyo
Hiroshi Amano
Hiroshi Amano Nagoya University
Takashi Mukai
Takashi Mukai National Institute of Advanced Industrial Science and Technology
Atsushi Tsukazaki
Atsushi Tsukazaki Tohoku University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Shigefusa F. Chichibu

Trending Scientists

Recently Published Articles