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Materials Science

D-Index
56
Citations
14936
World Ranking
8151
National Ranking
18

Overview

Tadeusz Suski is affiliated with the Polish Academy of Sciences in Poland. Their research is concentrated in the fields of Physics and Astronomy, Engineering, and Materials Science, with a significant focus on subfields including Condensed Matter Physics, Atomic and Molecular Physics and Optics, Materials Chemistry, Mechanics of Materials, and Electronic, Optical and Magnetic Materials.

Their work prominently covers topics such as GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Metal and Thin Film Mechanics, ZnO doping and properties, Ga2O3 and related materials, Semiconductor materials and devices, and Acoustic Wave Resonator Technologies.

Among their recent publications are:

  • GaN Laser Diode Technology for Visible-Light Communications (2022), Electronics
  • Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction (2020), Optics Express
  • III-nitride optoelectronic devices containing wide quantum wells-unexpectedly efficient light sources (2021), Japanese Journal of Applied Physics
  • Nitride light-emitting diodes for cryogenic temperatures (2020), Optics Express
  • InGaN blue light emitting micro-diodes with current path defined by tunnel junction (2020), Optics Letters

The venues where Tadeusz Suski frequently publishes include:

  • Optics Express
  • Materials
  • Electronics
  • Japanese Journal of Applied Physics
  • Optics Letters

Tadeusz Suski collaborates frequently with co-authors such as:

  • P. Perlin
  • G. Staszczak
  • Szymon Stańczyk
  • G. Muzioł
  • Anna Kafar

Best Publications

  • Strain-related phenomena in GaN thin films

    C. Kisielowski;J. Krüger;S. Ruvimov;T. Suski

  • Observation of Native Ga Vacancies in GaN by Positron Annihilation

    K. Saarinen;T. Laine;S. Kuisma;J. Nissilä

  • Observation Of Native Ga Vacancies In Gan By Positron Annihilation

    K. Saarinen;T. Laine;S. Kuisma;J. Nissilä

  • Lattice parameters of gallium nitride

    M. Leszczynski;H. Teisseyre;T. Suski;I. Grzegory

  • Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x

    C. Skierbiszewski;P. Perlin;P. Wisniewski;W. Knap

  • PRESSURE INDUCED DEEP GAP STATE OF OXYGEN IN GAN

    C. Wetzel;T. Suski;J.W. Ager Iii;E.R. Weber

  • Thermal expansion of gallium nitride

    M. Leszczynski;T. Suski;H. Teisseyre;P. Perlin

  • Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN

    P. Perlin;J. Camassel;W. Knap;T. Taliercio

  • Mechanism of yellow luminescence in GaN

    T. Suski;P. Perlin;H. Teisseyre;M. Leszczyński

  • Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties.

    P Perlin;I I Gorczyca;NE Christensen;NE Christensen;I I Grzegory

  • Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer

    H. Teisseyre;P. Perlin;T. Suski;I. Grzegory

  • Phonon dispersion curves in wurtzite-structure GaN determined by inelastic x-ray scattering.

    T. Ruf;J. Serrano;M. Cardona;P. Pavone

  • Thermal conductivity of GaN crystals in 4.2-300 K range

    A. Jeżowski;B.A. Danilchenko;M. Boćkowski;I. Grzegory

  • Determination of the effective mass of GaN from infrared reflectivity and Hall effect

    P. Perlin;E. Litwin‐Staszewska;B. Suchanek;W. Knap

  • Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire

    Sergei Ruvimov;Zuzanna Liliental‐Weber;Tadeusz Suski;Joel W. Ager

  • Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys

    I. Gorczyca;S. P. Łepkowski;T. Suski;N. E. Christensen

  • Raman-scattering studies of aluminum nitride at high pressure

    Piotr Perlin;Piotr Perlin;Alain Polian;Tadeusz Suski

  • Electronic states in valence and conduction bands of group-III nitrides: Experiment and theory

    K. Lawniczak-Jablonska;T. Suski;I. Gorczyca;N. E. Christensen

  • Thermal stability of isolated and complexed Ga vacancies in GaN bulk crystals

    K. Saarinen;T. Suski;I. Grzegory;David C. Look

  • High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

    E. Frayssinet;W. Knap;P. Lorenzini;N. Grandjean

Frequent Co-Authors

Izabella Grzegory
Izabella Grzegory Polish Academy of Sciences
Sylwester Porowski
Sylwester Porowski Polish Academy of Sciences
Michal Bockowski
Michal Bockowski Polish Academy of Sciences
Nicolas Grandjean
Nicolas Grandjean École Polytechnique Fédérale de Lausanne
Kimmo Saarinen
Kimmo Saarinen Aalto University
Wojciech Knap
Wojciech Knap Warsaw University of Technology
Joel W. Ager
Joel W. Ager Lawrence Berkeley National Laboratory
Eicke R. Weber
Eicke R. Weber University of California, Berkeley
Theodore D. Moustakas
Theodore D. Moustakas Boston University
Bo Monemar
Bo Monemar Linköping University

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