2023 - Research.com Materials Science in Poland Leader Award
2022 - Research.com Materials Science in Poland Leader Award
2019 - Member of Academia Europaea
Izabella Grzegory mostly deals with Crystallography, Epitaxy, Condensed matter physics, Optoelectronics and Gallium nitride. In her research on the topic of Crystallography, Crystallographic defect, Eutectic system, Etching, Electron diffraction and Microstructure is strongly related with Transmission electron microscopy. The study incorporates disciplines such as Hydride, Mineralogy, Substrate, Photoluminescence and Anisotropy in addition to Epitaxy.
Her Condensed matter physics study incorporates themes from Molecular beam epitaxy, Scattering, Hall effect and Diffraction. Her Optoelectronics study combines topics in areas such as Metalorganic vapour phase epitaxy, Crystallization and Exciton. Her study in Gallium nitride is interdisciplinary in nature, drawing from both Indentation, Optics, Lattice constant, Analytical chemistry and Electronic band structure.
Izabella Grzegory spends much of her time researching Optoelectronics, Epitaxy, Gallium nitride, Condensed matter physics and Analytical chemistry. The Optoelectronics study combines topics in areas such as Metalorganic vapour phase epitaxy, Molecular beam epitaxy and Laser. Her work carried out in the field of Epitaxy brings together such families of science as Hydride, Crystallography, Dislocation, Sapphire and Substrate.
Her Crystallography research is multidisciplinary, relying on both Crystallization and Transmission electron microscopy. The study of Gallium nitride is intertwined with the study of Lattice constant in a number of ways. Her study explores the link between Analytical chemistry and topics such as Doping that cross with problems in Conductivity.
The scientist’s investigation covers issues in Optoelectronics, Gallium nitride, Crystallization, Condensed matter physics and Epitaxy. Her work in Optoelectronics addresses subjects such as Metalorganic vapour phase epitaxy, which are connected to disciplines such as Hall effect. Her studies in Gallium nitride integrate themes in fields like Surface finish, Silicon, Raman spectroscopy, Gallium and Etching.
Her Crystallization study integrates concerns from other disciplines, such as Crystallography, Crystal growth, Seed crystal and Sapphire. Her study on Condensed matter physics also encompasses disciplines like
Izabella Grzegory spends much of her time researching Crystallization, Optoelectronics, Crystallography, Gallium nitride and Epitaxy. Her work on Doping, Free carrier and Wide-bandgap semiconductor as part of general Optoelectronics research is often related to Quality, thus linking different fields of science. Her research in the fields of Dislocation, Seed crystal and Crystal overlaps with other disciplines such as Bowing.
Her Gallium nitride research incorporates elements of Diode, Laser diode, Silicon and Gallium. The various areas that Izabella Grzegory examines in her Epitaxy study include Substrate, Crystal growth, Hydride and Analytical chemistry. In her work, Photoluminescence and Condensed matter physics is strongly intertwined with Spontaneous emission, which is a subfield of Molecular beam epitaxy.
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Elastic constants of gallium nitride
A. Polian;M. Grimsditch;I. Grzegory.
Journal of Applied Physics (1996)
Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure.
Piotr Perlin;Piotr Perlin;Claude Jauberthie-Carillon;Jean Paul Itie;Alfonso San Miguel.
Physical Review B (1992)
Observation Of Native Ga Vacancies In Gan By Positron Annihilation
K. Saarinen;T. Laine;S. Kuisma;J. Nissilä.
MRS Proceedings (1997)
Observation of Native Ga Vacancies in GaN by Positron Annihilation
K. Saarinen;T. Laine;S. Kuisma;J. Nissilä.
Physical Review Letters (1997)
Lattice parameters of gallium nitride
M. Leszczynski;H. Teisseyre;T. Suski;I. Grzegory.
Applied Physics Letters (1996)
Towards the identification of the dominant donor in GaN.
P Perlin;T Suski;H Teisseyre;M Leszczynski.
Physical Review Letters (1995)
Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films
K. Kornitzer;T. Ebner;K. Thonke;R. Sauer.
Physical Review B (1999)
Thermal expansion of gallium nitride
M. Leszczynski;T. Suski;H. Teisseyre;P. Perlin.
Journal of Applied Physics (1994)
Mechanism of yellow luminescence in GaN
T. Suski;P. Perlin;H. Teisseyre;M. Leszczyński.
Applied Physics Letters (1995)
Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN
P. Perlin;J. Camassel;W. Knap;T. Taliercio.
Applied Physics Letters (1995)
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