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Materials Science
Poland
2026

D-Index & Metrics

Materials Science

D-Index
65
Citations
18006
World Ranking
5553
National Ranking
8

Research.com Recognitions

  • 2026 - Research.com Materials Science in Poland Leader Award
  • 2025 - Research.com Materials Science in Poland Leader Award
  • 2022 - Research.com Materials Science in Poland Leader Award
  • 2019 - Member of Academia Europaea

Overview

Izabella Grzegory is affiliated with the Polish Academy of Sciences in Poland. Their research primarily focuses on semiconductor materials, with a notable emphasis on gallium nitride (GaN) and related compounds. The scientist's work spans several intersecting fields, including engineering, physics and astronomy, and materials science.

Their research is notably concentrated in subfields such as condensed matter physics, electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, and atomic and molecular physics and optics.

Main topics in Izabella Grzegory's research include:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Metal and thin film mechanics
  • Silicon carbide semiconductor technologies
  • Semiconductor quantum structures and devices

Frequent co-authors in their work include:

  • Stanisław Krukowski
  • Jacek Piechota
  • Konrad Sakowski
  • Paweł Strąk
  • Paweł Kempisty

Grzegory publishes regularly in a number of scientific journals and venues, with several having multiple publications:

  • Materials (7 publications)
  • physica status solidi (a) (4 publications)
  • arXiv (Cornell University) (3 publications)
  • Acta Physica Polonica A (2 publications)
  • Preprints.org (2 publications)

Selected recent papers by Izabella Grzegory include:

  • "Experimental and theoretical evidence of the temperature-induced wurtzite to rocksalt phase transition in GaN under high pressure," 2020, Physical Review. B
  • "High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates," 2022, IEEE Transactions on Electron Devices
  • "Melting versus Decomposition of GaN: Ab Initio Molecular Dynamics Study and Comparison to Experimental Data," 2023, Chemistry of Materials
  • "Recent Progress in Crystal Growth of Bulk GaN," 2022, Acta Physica Polonica A
  • "On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals," 2022, Crystals

In 2019, Izabella Grzegory was recognized as a Member of Academia Europaea.

Best Publications

  • Elastic constants of gallium nitride

    A. Polian;M. Grimsditch;I. Grzegory

  • Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure.

    Piotr Perlin;Piotr Perlin;Claude Jauberthie-Carillon;Jean Paul Itie;Alfonso San Miguel

  • Observation of Native Ga Vacancies in GaN by Positron Annihilation

    K. Saarinen;T. Laine;S. Kuisma;J. Nissilä

  • Observation Of Native Ga Vacancies In Gan By Positron Annihilation

    K. Saarinen;T. Laine;S. Kuisma;J. Nissilä

  • Lattice parameters of gallium nitride

    M. Leszczynski;H. Teisseyre;T. Suski;I. Grzegory

  • Towards the identification of the dominant donor in GaN.

    P Perlin;T Suski;H Teisseyre;M Leszczynski

  • Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

    K. Kornitzer;T. Ebner;K. Thonke;R. Sauer

  • Thermal expansion of gallium nitride

    M. Leszczynski;T. Suski;H. Teisseyre;P. Perlin

  • Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN

    P. Perlin;J. Camassel;W. Knap;T. Taliercio

  • Chemical polishing of bulk and epitaxial GaN

    J.L. Weyher;S. Müller;I. Grzegory;S. Porowski

  • Mechanism of yellow luminescence in GaN

    T. Suski;P. Perlin;H. Teisseyre;M. Leszczyński

  • Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure

    S. Porowski;I. Grzegory

  • Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties.

    P Perlin;I I Gorczyca;NE Christensen;NE Christensen;I I Grzegory

  • Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer

    H. Teisseyre;P. Perlin;T. Suski;I. Grzegory

  • Phonon dispersion curves in wurtzite-structure GaN determined by inelastic x-ray scattering.

    T. Ruf;J. Serrano;M. Cardona;P. Pavone

  • Thermal conductivity of GaN crystals in 4.2-300 K range

    A. Jeżowski;B.A. Danilchenko;M. Boćkowski;I. Grzegory

  • Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal

    R. Nowak;M. Pessa;M. Suganuma;M. Leszczynski

  • Determination of the effective mass of GaN from infrared reflectivity and Hall effect

    P. Perlin;E. Litwin‐Staszewska;B. Suchanek;W. Knap

  • III V Nitrides—thermodynamics and crystal growth at high N2 pressure

    I. Grzegory;J. Jun;M. Boćkowski;St. Krukowski

  • Exciton region reflectance of homoepitaxial GaN layers

    K. P. Korona;A. Wysmol;ek;K. Pakul

Frequent Co-Authors

Sylwester Porowski
Sylwester Porowski Polish Academy of Sciences
Tadeusz Suski
Tadeusz Suski Polish Academy of Sciences
Michal Bockowski
Michal Bockowski Polish Academy of Sciences
Nicolas Grandjean
Nicolas Grandjean École Polytechnique Fédérale de Lausanne
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
Bo Monemar
Bo Monemar Linköping University
Kimmo Saarinen
Kimmo Saarinen Aalto University
Jean Massies
Jean Massies Centre national de la recherche scientifique, CNRS
Wojciech Knap
Wojciech Knap Warsaw University of Technology
Alain Polian
Alain Polian Sorbonne University

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