2026 Izabella Grzegory: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	65	5551	5367	8	8	496	18006

Izabella Grzegory publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Izabella Grzegory sits on this spectrum.

50 publications 1,163+

This scientist: 496 publications — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Izabella Grzegory D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Izabella Grzegory sits on this spectrum.

40 D-Index 165+

This scientist: 65 D-Index — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

2026 - Research.com Materials Science in Poland Leader Award
2025 - Research.com Materials Science in Poland Leader Award
2022 - Research.com Materials Science in Poland Leader Award
2019 - Member of Academia Europaea

Overview

Izabella Grzegory is affiliated with the Polish Academy of Sciences in Poland. Their research primarily focuses on semiconductor materials, with a notable emphasis on gallium nitride (GaN) and related compounds. The scientist's work spans several intersecting fields, including engineering, physics and astronomy, and materials science.

Their research is notably concentrated in subfields such as condensed matter physics, electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, and atomic and molecular physics and optics.

Main topics in Izabella Grzegory's research include:

GaN-based semiconductor devices and materials
Semiconductor materials and devices
Ga2O3 and related materials
ZnO doping and properties
Metal and thin film mechanics
Silicon carbide semiconductor technologies
Semiconductor quantum structures and devices

Frequent co-authors in their work include:

Stanisław Krukowski
Jacek Piechota
Konrad Sakowski
Paweł Strąk
Paweł Kempisty

Grzegory publishes regularly in a number of scientific journals and venues, with several having multiple publications:

Materials (7 publications)
physica status solidi (a) (4 publications)
arXiv (Cornell University) (3 publications)
Acta Physica Polonica A (2 publications)
Preprints.org (2 publications)

Selected recent papers by Izabella Grzegory include:

"Experimental and theoretical evidence of the temperature-induced wurtzite to rocksalt phase transition in GaN under high pressure," 2020, Physical Review. B
"High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates," 2022, IEEE Transactions on Electron Devices
"Melting versus Decomposition of GaN: Ab Initio Molecular Dynamics Study and Comparison to Experimental Data," 2023, Chemistry of Materials
"Recent Progress in Crystal Growth of Bulk GaN," 2022, Acta Physica Polonica A
"On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals," 2022, Crystals

In 2019, Izabella Grzegory was recognized as a Member of Academia Europaea.

Best Publications

Elastic constants of gallium nitride

A. Polian;M. Grimsditch;I. Grzegory

845
Citations
Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure.

Piotr Perlin;Piotr Perlin;Claude Jauberthie-Carillon;Jean Paul Itie;Alfonso San Miguel

794
Citations
Observation of Native Ga Vacancies in GaN by Positron Annihilation

K. Saarinen;T. Laine;S. Kuisma;J. Nissilä

619
Citations
Observation Of Native Ga Vacancies In Gan By Positron Annihilation

K. Saarinen;T. Laine;S. Kuisma;J. Nissilä

601
Citations
Lattice parameters of gallium nitride

M. Leszczynski;H. Teisseyre;T. Suski;I. Grzegory

567
Citations
Towards the identification of the dominant donor in GaN.

P Perlin;T Suski;H Teisseyre;M Leszczynski

436
Citations
Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

K. Kornitzer;T. Ebner;K. Thonke;R. Sauer

310
Citations
Thermal expansion of gallium nitride

M. Leszczynski;T. Suski;H. Teisseyre;P. Perlin

308
Citations
Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN

P. Perlin;J. Camassel;W. Knap;T. Taliercio

282
Citations
Chemical polishing of bulk and epitaxial GaN

J.L. Weyher;S. Müller;I. Grzegory;S. Porowski

282
Citations
Mechanism of yellow luminescence in GaN

T. Suski;P. Perlin;H. Teisseyre;M. Leszczyński

280
Citations
Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure

S. Porowski;I. Grzegory

272
Citations
Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties.

P Perlin;I I Gorczyca;NE Christensen;NE Christensen;I I Grzegory

251
Citations
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer

H. Teisseyre;P. Perlin;T. Suski;I. Grzegory

248
Citations
Phonon dispersion curves in wurtzite-structure GaN determined by inelastic x-ray scattering.

T. Ruf;J. Serrano;M. Cardona;P. Pavone

247
Citations
Thermal conductivity of GaN crystals in 4.2-300 K range

A. Jeżowski;B.A. Danilchenko;M. Boćkowski;I. Grzegory

231
Citations
Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal

R. Nowak;M. Pessa;M. Suganuma;M. Leszczynski

213
Citations
Determination of the effective mass of GaN from infrared reflectivity and Hall effect

P. Perlin;E. Litwin‐Staszewska;B. Suchanek;W. Knap

205
Citations
III V Nitrides—thermodynamics and crystal growth at high N2 pressure

I. Grzegory;J. Jun;M. Boćkowski;St. Krukowski

200
Citations
Exciton region reflectance of homoepitaxial GaN layers

K. P. Korona;A. Wysmol;ek;K. Pakul

193
Citations