D-Index & Metrics Best Publications
Materials Science
Poland
2023

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 60 Citations 14,563 411 World Ranking 4275 National Ranking 8

Research.com Recognitions

Awards & Achievements

2023 - Research.com Materials Science in Poland Leader Award

2022 - Research.com Materials Science in Poland Leader Award

2019 - Member of Academia Europaea

Overview

What is she best known for?

The fields of study she is best known for:

  • Semiconductor
  • Thermodynamics
  • Atom

Izabella Grzegory mostly deals with Crystallography, Epitaxy, Condensed matter physics, Optoelectronics and Gallium nitride. In her research on the topic of Crystallography, Crystallographic defect, Eutectic system, Etching, Electron diffraction and Microstructure is strongly related with Transmission electron microscopy. The study incorporates disciplines such as Hydride, Mineralogy, Substrate, Photoluminescence and Anisotropy in addition to Epitaxy.

Her Condensed matter physics study incorporates themes from Molecular beam epitaxy, Scattering, Hall effect and Diffraction. Her Optoelectronics study combines topics in areas such as Metalorganic vapour phase epitaxy, Crystallization and Exciton. Her study in Gallium nitride is interdisciplinary in nature, drawing from both Indentation, Optics, Lattice constant, Analytical chemistry and Electronic band structure.

Her most cited work include:

  • Elastic constants of gallium nitride (485 citations)
  • Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure. (451 citations)
  • Observation of Native Ga Vacancies in GaN by Positron Annihilation (380 citations)

What are the main themes of her work throughout her whole career to date?

Izabella Grzegory spends much of her time researching Optoelectronics, Epitaxy, Gallium nitride, Condensed matter physics and Analytical chemistry. The Optoelectronics study combines topics in areas such as Metalorganic vapour phase epitaxy, Molecular beam epitaxy and Laser. Her work carried out in the field of Epitaxy brings together such families of science as Hydride, Crystallography, Dislocation, Sapphire and Substrate.

Her Crystallography research is multidisciplinary, relying on both Crystallization and Transmission electron microscopy. The study of Gallium nitride is intertwined with the study of Lattice constant in a number of ways. Her study explores the link between Analytical chemistry and topics such as Doping that cross with problems in Conductivity.

She most often published in these fields:

  • Optoelectronics (39.91%)
  • Epitaxy (26.76%)
  • Gallium nitride (23.81%)

What were the highlights of her more recent work (between 2009-2021)?

  • Optoelectronics (39.91%)
  • Gallium nitride (23.81%)
  • Crystallization (12.24%)

In recent papers she was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Gallium nitride, Crystallization, Condensed matter physics and Epitaxy. Her work in Optoelectronics addresses subjects such as Metalorganic vapour phase epitaxy, which are connected to disciplines such as Hall effect. Her studies in Gallium nitride integrate themes in fields like Surface finish, Silicon, Raman spectroscopy, Gallium and Etching.

Her Crystallization study integrates concerns from other disciplines, such as Crystallography, Crystal growth, Seed crystal and Sapphire. Her study on Condensed matter physics also encompasses disciplines like

  • Quantum well which is related to area like Exciton, Photoluminescence and Spontaneous emission,
  • Molecular beam epitaxy, which have a strong connection to Wide-bandgap semiconductor. The concepts of her Epitaxy study are interwoven with issues in Substrate, Hydride, Halide and Analytical chemistry.

Between 2009 and 2021, her most popular works were:

  • Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds (43 citations)
  • HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties (34 citations)
  • Multi feed seed (MFS) high pressure crystallization of 1–2 in GaN (28 citations)

In her most recent research, the most cited papers focused on:

  • Semiconductor
  • Atom
  • Thermodynamics

Izabella Grzegory spends much of her time researching Crystallization, Optoelectronics, Crystallography, Gallium nitride and Epitaxy. Her work on Doping, Free carrier and Wide-bandgap semiconductor as part of general Optoelectronics research is often related to Quality, thus linking different fields of science. Her research in the fields of Dislocation, Seed crystal and Crystal overlaps with other disciplines such as Bowing.

Her Gallium nitride research incorporates elements of Diode, Laser diode, Silicon and Gallium. The various areas that Izabella Grzegory examines in her Epitaxy study include Substrate, Crystal growth, Hydride and Analytical chemistry. In her work, Photoluminescence and Condensed matter physics is strongly intertwined with Spontaneous emission, which is a subfield of Molecular beam epitaxy.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Elastic constants of gallium nitride

A. Polian;M. Grimsditch;I. Grzegory.
Journal of Applied Physics (1996)

803 Citations

Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure.

Piotr Perlin;Piotr Perlin;Claude Jauberthie-Carillon;Jean Paul Itie;Alfonso San Miguel.
Physical Review B (1992)

767 Citations

Observation Of Native Ga Vacancies In Gan By Positron Annihilation

K. Saarinen;T. Laine;S. Kuisma;J. Nissilä.
MRS Proceedings (1997)

587 Citations

Observation of Native Ga Vacancies in GaN by Positron Annihilation

K. Saarinen;T. Laine;S. Kuisma;J. Nissilä.
Physical Review Letters (1997)

580 Citations

Lattice parameters of gallium nitride

M. Leszczynski;H. Teisseyre;T. Suski;I. Grzegory.
Applied Physics Letters (1996)

510 Citations

Towards the identification of the dominant donor in GaN.

P Perlin;T Suski;H Teisseyre;M Leszczynski.
Physical Review Letters (1995)

420 Citations

Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

K. Kornitzer;T. Ebner;K. Thonke;R. Sauer.
Physical Review B (1999)

300 Citations

Thermal expansion of gallium nitride

M. Leszczynski;T. Suski;H. Teisseyre;P. Perlin.
Journal of Applied Physics (1994)

293 Citations

Mechanism of yellow luminescence in GaN

T. Suski;P. Perlin;H. Teisseyre;M. Leszczyński.
Applied Physics Letters (1995)

275 Citations

Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN

P. Perlin;J. Camassel;W. Knap;T. Taliercio.
Applied Physics Letters (1995)

274 Citations

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