What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Optoelectronics
- Transistor
His primary scientific interests are in Optoelectronics, Transistor, Wide-bandgap semiconductor, High-electron-mobility transistor and Gallium nitride.
The concepts of his Optoelectronics study are interwoven with issues in Molecular beam epitaxy, Breakdown voltage and Power density.
His Transistor research integrates issues from Silicon carbide and Leakage.
His research integrates issues of Polarization, Ohmic contact, Band gap and Atomic physics in his study of Wide-bandgap semiconductor.
His High-electron-mobility transistor study incorporates themes from Layer and Amplifier.
The Gallium nitride study combines topics in areas such as Power electronics and Power gain.
His most cited work include:
- AlGaN/GaN HEMTs-an overview of device operation and applications (1347 citations)
- GaN-Based RF Power Devices and Amplifiers (1066 citations)
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs (1061 citations)
What are the main themes of his work throughout his whole career to date?
The scientist’s investigation covers issues in Optoelectronics, Transistor, Gallium nitride, High-electron-mobility transistor and Wide-bandgap semiconductor.
The study incorporates disciplines such as Metalorganic vapour phase epitaxy and Electrical engineering in addition to Optoelectronics.
His research in Transistor intersects with topics in Cutoff frequency, Breakdown voltage and Leakage.
His Gallium nitride research integrates issues from Sapphire, Ohmic contact and Logic gate.
His study looks at the relationship between High-electron-mobility transistor and fields such as Power density, as well as how they intersect with chemical problems.
The study incorporates disciplines such as Algan gan, Electron mobility and Band gap in addition to Wide-bandgap semiconductor.
He most often published in these fields:
- Optoelectronics (71.64%)
- Transistor (24.65%)
- Gallium nitride (24.15%)
What were the highlights of his more recent work (between 2014-2021)?
- Optoelectronics (71.64%)
- Transistor (24.65%)
- Gallium nitride (24.15%)
In recent papers he was focusing on the following fields of study:
His primary areas of study are Optoelectronics, Transistor, Gallium nitride, Chemical vapor deposition and Analytical chemistry.
His biological study spans a wide range of topics, including Metalorganic vapour phase epitaxy, Breakdown voltage, High-electron-mobility transistor, Layer and Sapphire.
He interconnects Wide-bandgap semiconductor and Capacitance in the investigation of issues within Metalorganic vapour phase epitaxy.
His Gallium nitride research is multidisciplinary, relying on both Power density, Passivation, Logic gate, Electrical engineering and MOSFET.
His Chemical vapor deposition study combines topics from a wide range of disciplines, such as Electron mobility, Indium, Luminescence, Stress and Dielectric.
The various areas that Umesh K. Mishra examines in his Analytical chemistry study include Heterojunction, Atom probe and Doping.
Between 2014 and 2021, his most popular works were:
- Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (315 citations)
- Demonstration of β-(AlxGa1-x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy (92 citations)
- Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy (82 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Transistor
- Electrical engineering
Umesh K. Mishra mainly investigates Optoelectronics, Analytical chemistry, Breakdown voltage, Gallium nitride and Metalorganic vapour phase epitaxy.
Umesh K. Mishra combines subjects such as Sapphire, Transistor and Power density with his study of Optoelectronics.
His Transistor study combines topics in areas such as Dispersion and Semiconductor.
His Analytical chemistry research incorporates themes from Molecular beam epitaxy, Atom probe, ISFET and Substrate.
His Breakdown voltage research includes themes of Threshold voltage, Trench and Gate dielectric.
His studies in Metalorganic vapour phase epitaxy integrate themes in fields like Porosity, Power electronics, Doping and Indium gallium nitride.
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