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Electronics and Electrical Engineering
USA
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
129
Citations
72739
World Ranking
41
National Ranking
22

Materials Science

D-Index
128
Citations
72127
World Ranking
367
National Ranking
141

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2015 - Fellow, National Academy of Inventors
  • 2009 - Member of the National Academy of Engineering For contributions to development of gallium-nitride electronics and other high-speed, high-power semiconductor electronic devices.
  • 2007 - IEEE David Sarnoff Award “For development of gallium nitride electronics.”
  • 1995 - IEEE Fellow For contributions to low-noise high-electron mobility transistors (HEMTs) and compound semiconductor device technology.

Overview

Umesh K. Mishra is affiliated with the University of California, Santa Barbara in the United States. Their research primarily focuses on semiconductor materials and devices, especially gallium-nitride (GaN) based technologies. They have a significant presence in the fields of engineering, physics and astronomy, and materials science.

Their work spans several subfields including electrical and electronic engineering, condensed matter physics, electronic, optical and magnetic materials, materials chemistry, and atomic and molecular physics, and optics. These diverse subfields reflect a broad involvement in both applied and fundamental aspects of semiconductor physics and device engineering.

Mishra's research covers multiple key topics such as:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Radio frequency integrated circuit design
  • Silicon carbide semiconductor technologies
  • Semiconductor quantum structures and devices

Their frequent co-authors include:

  • S. Keller
  • Nirupam Hatui
  • Matthew Guidry
  • Brian Romanczyk
  • Henry Collins

Mishra publishes regularly in key venues such as:

  • Applied Physics Letters
  • IEEE Electron Device Letters
  • IEEE Microwave and Wireless Technology Letters
  • Crystals
  • The Cambridge Structural Database

Recent publications illustrate the scope of Mishra's research interests and contributions:

  • "Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays," 2020, Applied Physics Express
  • "W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs," 2020, IEEE Electron Device Letters
  • "High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz," 2020, IEEE Electron Device Letters
  • "Color-tunable <10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates," 2020, Applied Physics Letters
  • "Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current," 2020, IEEE Electron Device Letters

Throughout their career, Mishra has received several distinctions including:

  • Fellow, National Academy of Inventors (2015)
  • Member of the National Academy of Engineering (2009) for contributions to development of gallium-nitride electronics and other high-speed, high-power semiconductor electronic devices
  • IEEE David Sarnoff Award (2007) for development of gallium nitride electronics
  • IEEE Fellow (1995) for contributions to low-noise high-electron mobility transistors (HEMTs) and compound semiconductor device technology

Best Publications

  • AlGaN/GaN HEMTs-an overview of device operation and applications

    U.K. Mishra;P. Parikh;Yi-Feng Wu

  • GaN-Based RF Power Devices and Amplifiers

    U.K. Mishra;Shen Likun;T.E. Kazior;Yi-Feng Wu

  • The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

    R. Vetury;N.Q. Zhang;S. Keller;U.K. Mishra

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • 30-W/mm GaN HEMTs by field plate optimization

    Y.-F. Wu;A. Saxler;M. Moore;R.P. Smith

  • Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

    J. P. Ibbetson;P. T. Fini;K. D. Ness;S. P. DenBaars

  • Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

    J. F. Muth;J. H. Lee;I. K. Shmagin;R. M. Kolbas

  • “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

    Yong-Hoon Cho;G. H. Gainer;A. J. Fischer;J. J. Song

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • Very-high power density AlGaN/GaN HEMTs

    Yi-Feng Wu;D. Kapolnek;J.P. Ibbetson;P. Parikh

  • AlGaN/AlN/GaN high-power microwave HEMT

    L. Shen;S. Heikman;B. Moran;R. Coffie

  • High-power AlGaN/GaN HEMTs for Ka-band applications

    T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz

  • POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

    I. P. Smorchkova;C. R. Elsass;J. P. Ibbetson;R. Vetury

  • Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

    S. F. Chichibu;A. C. Abare;M. S. Minsky;S. Keller

  • High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

    Y. Dora;A. Chakraborty;L. McCarthy;S. Keller

  • Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

    S. Karmalkar;U.K. Mishra

  • High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

    Carl J. Neufeld;Nikholas G. Toledo;Samantha C. Cruz;Michael Iza

  • Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

    Steven P. Denbaars;Daniel Feezell;Katheryn Kelchner;Siddha Pimputkar

  • High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

    Huili Xing;Y. Dora;A. Chini;S. Heikman

  • Heavy doping effects in Mg-doped GaN

    Peter Kozodoy;Huili Xing;Steven P. DenBaars;Umesh K. Mishra

  • AlGaN/GaN high electron mobility transistors with InGaN back-barriers

    T. Palacios;A. Chakraborty;S. Heikman;S. Keller

Frequent Co-Authors

Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
James S. Speck
James S. Speck University of California, Santa Barbara
Stacia Keller
Stacia Keller University of California, Santa Barbara
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
Arpan Chakraborty
Arpan Chakraborty Apple (United States)
Yifeng Wu
Yifeng Wu Transphorm Inc.
Siddharth Rajan
Siddharth Rajan The Ohio State University
Man Hoi Wong
Man Hoi Wong Hong Kong University of Science and Technology
Feng Wu
Feng Wu Huazhong University of Science and Technology

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