World's Best Scientists 2026 revealed!
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Electronics and Electrical Engineering
USA
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
129
Citations
72739
World Ranking
41
National Ranking
22

Materials Science

D-Index
128
Citations
72127
World Ranking
367
National Ranking
141

Umesh K. Mishra publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Umesh K. Mishra sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 1,215 publications — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Umesh K. Mishra D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Umesh K. Mishra sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 129 D-Index — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2015 - Fellow, National Academy of Inventors
  • 2009 - Member of the National Academy of Engineering For contributions to development of gallium-nitride electronics and other high-speed, high-power semiconductor electronic devices.
  • 2007 - IEEE David Sarnoff Award “For development of gallium nitride electronics.”
  • 1995 - IEEE Fellow For contributions to low-noise high-electron mobility transistors (HEMTs) and compound semiconductor device technology.

Overview

Umesh K. Mishra is affiliated with the University of California, Santa Barbara in the United States. Their research primarily focuses on semiconductor materials and devices, especially gallium-nitride (GaN) based technologies. They have a significant presence in the fields of engineering, physics and astronomy, and materials science.

Their work spans several subfields including electrical and electronic engineering, condensed matter physics, electronic, optical and magnetic materials, materials chemistry, and atomic and molecular physics, and optics. These diverse subfields reflect a broad involvement in both applied and fundamental aspects of semiconductor physics and device engineering.

Mishra's research covers multiple key topics such as:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Radio frequency integrated circuit design
  • Silicon carbide semiconductor technologies
  • Semiconductor quantum structures and devices

Their frequent co-authors include:

  • S. Keller
  • Nirupam Hatui
  • Matthew Guidry
  • Brian Romanczyk
  • Henry Collins

Mishra publishes regularly in key venues such as:

  • Applied Physics Letters
  • IEEE Electron Device Letters
  • IEEE Microwave and Wireless Technology Letters
  • Crystals
  • The Cambridge Structural Database

Recent publications illustrate the scope of Mishra's research interests and contributions:

  • "Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays," 2020, Applied Physics Express
  • "W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs," 2020, IEEE Electron Device Letters
  • "High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz," 2020, IEEE Electron Device Letters
  • "Color-tunable <10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates," 2020, Applied Physics Letters
  • "Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current," 2020, IEEE Electron Device Letters

Throughout their career, Mishra has received several distinctions including:

  • Fellow, National Academy of Inventors (2015)
  • Member of the National Academy of Engineering (2009) for contributions to development of gallium-nitride electronics and other high-speed, high-power semiconductor electronic devices
  • IEEE David Sarnoff Award (2007) for development of gallium nitride electronics
  • IEEE Fellow (1995) for contributions to low-noise high-electron mobility transistors (HEMTs) and compound semiconductor device technology

Best Publications

  • AlGaN/GaN HEMTs-an overview of device operation and applications

    U.K. Mishra;P. Parikh;Yi-Feng Wu

  • GaN-Based RF Power Devices and Amplifiers

    U.K. Mishra;Shen Likun;T.E. Kazior;Yi-Feng Wu

  • The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

    R. Vetury;N.Q. Zhang;S. Keller;U.K. Mishra

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • 30-W/mm GaN HEMTs by field plate optimization

    Y.-F. Wu;A. Saxler;M. Moore;R.P. Smith

  • Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

    J. P. Ibbetson;P. T. Fini;K. D. Ness;S. P. DenBaars

  • Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

    J. F. Muth;J. H. Lee;I. K. Shmagin;R. M. Kolbas

  • “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

    Yong-Hoon Cho;G. H. Gainer;A. J. Fischer;J. J. Song

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • Very-high power density AlGaN/GaN HEMTs

    Yi-Feng Wu;D. Kapolnek;J.P. Ibbetson;P. Parikh

  • AlGaN/AlN/GaN high-power microwave HEMT

    L. Shen;S. Heikman;B. Moran;R. Coffie

  • High-power AlGaN/GaN HEMTs for Ka-band applications

    T. Palacios;A. Chakraborty;S. Rajan;C. Poblenz

  • POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

    I. P. Smorchkova;C. R. Elsass;J. P. Ibbetson;R. Vetury

  • Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

    S. F. Chichibu;A. C. Abare;M. S. Minsky;S. Keller

  • High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

    Y. Dora;A. Chakraborty;L. McCarthy;S. Keller

  • Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

    S. Karmalkar;U.K. Mishra

  • High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

    Carl J. Neufeld;Nikholas G. Toledo;Samantha C. Cruz;Michael Iza

  • Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

    Steven P. Denbaars;Daniel Feezell;Katheryn Kelchner;Siddha Pimputkar

  • High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

    Huili Xing;Y. Dora;A. Chini;S. Heikman

  • Heavy doping effects in Mg-doped GaN

    Peter Kozodoy;Huili Xing;Steven P. DenBaars;Umesh K. Mishra

  • AlGaN/GaN high electron mobility transistors with InGaN back-barriers

    T. Palacios;A. Chakraborty;S. Heikman;S. Keller

Frequent Co-Authors

Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
James S. Speck
James S. Speck University of California, Santa Barbara
Stacia Keller
Stacia Keller University of California, Santa Barbara
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
Arpan Chakraborty
Arpan Chakraborty Apple (United States)
Yifeng Wu
Yifeng Wu Transphorm Inc.
Siddharth Rajan
Siddharth Rajan The Ohio State University
Man Hoi Wong
Man Hoi Wong Hong Kong University of Science and Technology
Feng Wu
Feng Wu Huazhong University of Science and Technology

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