D-Index & Metrics Best Publications

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 99 Citations 39,377 616 World Ranking 43 National Ranking 26
Materials Science D-index 105 Citations 47,676 752 World Ranking 344 National Ranking 147

Research.com Recognitions

Awards & Achievements

2015 - Fellow, National Academy of Inventors

2009 - Member of the National Academy of Engineering For contributions to development of gallium-nitride electronics and other high-speed, high-power semiconductor electronic devices.

2007 - IEEE David Sarnoff Award “For development of gallium nitride electronics.”

1995 - IEEE Fellow For contributions to low-noise high-electron mobility transistors (HEMTs) and compound semiconductor device technology.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optoelectronics
  • Transistor

His primary scientific interests are in Optoelectronics, Transistor, Wide-bandgap semiconductor, High-electron-mobility transistor and Gallium nitride. The concepts of his Optoelectronics study are interwoven with issues in Molecular beam epitaxy, Breakdown voltage and Power density. His Transistor research integrates issues from Silicon carbide and Leakage.

His research integrates issues of Polarization, Ohmic contact, Band gap and Atomic physics in his study of Wide-bandgap semiconductor. His High-electron-mobility transistor study incorporates themes from Layer and Amplifier. The Gallium nitride study combines topics in areas such as Power electronics and Power gain.

His most cited work include:

  • AlGaN/GaN HEMTs-an overview of device operation and applications (1347 citations)
  • GaN-Based RF Power Devices and Amplifiers (1066 citations)
  • The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs (1061 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Optoelectronics, Transistor, Gallium nitride, High-electron-mobility transistor and Wide-bandgap semiconductor. The study incorporates disciplines such as Metalorganic vapour phase epitaxy and Electrical engineering in addition to Optoelectronics. His research in Transistor intersects with topics in Cutoff frequency, Breakdown voltage and Leakage.

His Gallium nitride research integrates issues from Sapphire, Ohmic contact and Logic gate. His study looks at the relationship between High-electron-mobility transistor and fields such as Power density, as well as how they intersect with chemical problems. The study incorporates disciplines such as Algan gan, Electron mobility and Band gap in addition to Wide-bandgap semiconductor.

He most often published in these fields:

  • Optoelectronics (71.64%)
  • Transistor (24.65%)
  • Gallium nitride (24.15%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (71.64%)
  • Transistor (24.65%)
  • Gallium nitride (24.15%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Optoelectronics, Transistor, Gallium nitride, Chemical vapor deposition and Analytical chemistry. His biological study spans a wide range of topics, including Metalorganic vapour phase epitaxy, Breakdown voltage, High-electron-mobility transistor, Layer and Sapphire. He interconnects Wide-bandgap semiconductor and Capacitance in the investigation of issues within Metalorganic vapour phase epitaxy.

His Gallium nitride research is multidisciplinary, relying on both Power density, Passivation, Logic gate, Electrical engineering and MOSFET. His Chemical vapor deposition study combines topics from a wide range of disciplines, such as Electron mobility, Indium, Luminescence, Stress and Dielectric. The various areas that Umesh K. Mishra examines in his Analytical chemistry study include Heterojunction, Atom probe and Doping.

Between 2014 and 2021, his most popular works were:

  • Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (315 citations)
  • Demonstration of β-(AlxGa1-x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy (92 citations)
  • Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy (82 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Electrical engineering

Umesh K. Mishra mainly investigates Optoelectronics, Analytical chemistry, Breakdown voltage, Gallium nitride and Metalorganic vapour phase epitaxy. Umesh K. Mishra combines subjects such as Sapphire, Transistor and Power density with his study of Optoelectronics. His Transistor study combines topics in areas such as Dispersion and Semiconductor.

His Analytical chemistry research incorporates themes from Molecular beam epitaxy, Atom probe, ISFET and Substrate. His Breakdown voltage research includes themes of Threshold voltage, Trench and Gate dielectric. His studies in Metalorganic vapour phase epitaxy integrate themes in fields like Porosity, Power electronics, Doping and Indium gallium nitride.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

AlGaN/GaN HEMTs-an overview of device operation and applications

U.K. Mishra;P. Parikh;Yi-Feng Wu.
Proceedings of the IEEE (2002)

1783 Citations

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

R. Vetury;N.Q. Zhang;S. Keller;U.K. Mishra.
IEEE Transactions on Electron Devices (2001)

1440 Citations

GaN-Based RF Power Devices and Amplifiers

U.K. Mishra;Shen Likun;T.E. Kazior;Yi-Feng Wu.
Proceedings of the IEEE (2008)

1405 Citations

30-W/mm GaN HEMTs by field plate optimization

Y.-F. Wu;A. Saxler;M. Moore;R.P. Smith.
IEEE Electron Device Letters (2004)

1196 Citations

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

J. P. Ibbetson;P. T. Fini;K. D. Ness;S. P. DenBaars.
Applied Physics Letters (2000)

1059 Citations

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

J. F. Muth;J. H. Lee;I. K. Shmagin;R. M. Kolbas.
Applied Physics Letters (1997)

775 Citations

“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

Yong-Hoon Cho;G. H. Gainer;A. J. Fischer;J. J. Song.
Applied Physics Letters (1998)

750 Citations

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell.
Nature Materials (2006)

717 Citations

Very-high power density AlGaN/GaN HEMTs

Yi-Feng Wu;D. Kapolnek;J.P. Ibbetson;P. Parikh.
IEEE Transactions on Electron Devices (2001)

678 Citations

Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

S. F. Chichibu;A. C. Abare;M. S. Minsky;S. Keller.
Applied Physics Letters (1998)

518 Citations

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