2015 - Fellow, National Academy of Inventors
2009 - Member of the National Academy of Engineering For contributions to development of gallium-nitride electronics and other high-speed, high-power semiconductor electronic devices.
2007 - IEEE David Sarnoff Award “For development of gallium nitride electronics.”
1995 - IEEE Fellow For contributions to low-noise high-electron mobility transistors (HEMTs) and compound semiconductor device technology.
His primary scientific interests are in Optoelectronics, Transistor, Wide-bandgap semiconductor, High-electron-mobility transistor and Gallium nitride. The concepts of his Optoelectronics study are interwoven with issues in Molecular beam epitaxy, Breakdown voltage and Power density. His Transistor research integrates issues from Silicon carbide and Leakage.
His research integrates issues of Polarization, Ohmic contact, Band gap and Atomic physics in his study of Wide-bandgap semiconductor. His High-electron-mobility transistor study incorporates themes from Layer and Amplifier. The Gallium nitride study combines topics in areas such as Power electronics and Power gain.
The scientist’s investigation covers issues in Optoelectronics, Transistor, Gallium nitride, High-electron-mobility transistor and Wide-bandgap semiconductor. The study incorporates disciplines such as Metalorganic vapour phase epitaxy and Electrical engineering in addition to Optoelectronics. His research in Transistor intersects with topics in Cutoff frequency, Breakdown voltage and Leakage.
His Gallium nitride research integrates issues from Sapphire, Ohmic contact and Logic gate. His study looks at the relationship between High-electron-mobility transistor and fields such as Power density, as well as how they intersect with chemical problems. The study incorporates disciplines such as Algan gan, Electron mobility and Band gap in addition to Wide-bandgap semiconductor.
His primary areas of study are Optoelectronics, Transistor, Gallium nitride, Chemical vapor deposition and Analytical chemistry. His biological study spans a wide range of topics, including Metalorganic vapour phase epitaxy, Breakdown voltage, High-electron-mobility transistor, Layer and Sapphire. He interconnects Wide-bandgap semiconductor and Capacitance in the investigation of issues within Metalorganic vapour phase epitaxy.
His Gallium nitride research is multidisciplinary, relying on both Power density, Passivation, Logic gate, Electrical engineering and MOSFET. His Chemical vapor deposition study combines topics from a wide range of disciplines, such as Electron mobility, Indium, Luminescence, Stress and Dielectric. The various areas that Umesh K. Mishra examines in his Analytical chemistry study include Heterojunction, Atom probe and Doping.
Umesh K. Mishra mainly investigates Optoelectronics, Analytical chemistry, Breakdown voltage, Gallium nitride and Metalorganic vapour phase epitaxy. Umesh K. Mishra combines subjects such as Sapphire, Transistor and Power density with his study of Optoelectronics. His Transistor study combines topics in areas such as Dispersion and Semiconductor.
His Analytical chemistry research incorporates themes from Molecular beam epitaxy, Atom probe, ISFET and Substrate. His Breakdown voltage research includes themes of Threshold voltage, Trench and Gate dielectric. His studies in Metalorganic vapour phase epitaxy integrate themes in fields like Porosity, Power electronics, Doping and Indium gallium nitride.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
AlGaN/GaN HEMTs-an overview of device operation and applications
U.K. Mishra;P. Parikh;Yi-Feng Wu.
Proceedings of the IEEE (2002)
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
R. Vetury;N.Q. Zhang;S. Keller;U.K. Mishra.
IEEE Transactions on Electron Devices (2001)
GaN-Based RF Power Devices and Amplifiers
U.K. Mishra;Shen Likun;T.E. Kazior;Yi-Feng Wu.
Proceedings of the IEEE (2008)
30-W/mm GaN HEMTs by field plate optimization
Y.-F. Wu;A. Saxler;M. Moore;R.P. Smith.
IEEE Electron Device Letters (2004)
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
J. P. Ibbetson;P. T. Fini;K. D. Ness;S. P. DenBaars.
Applied Physics Letters (2000)
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
J. F. Muth;J. H. Lee;I. K. Shmagin;R. M. Kolbas.
Applied Physics Letters (1997)
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
Yong-Hoon Cho;G. H. Gainer;A. J. Fischer;J. J. Song.
Applied Physics Letters (1998)
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.
Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell.
Nature Materials (2006)
Very-high power density AlGaN/GaN HEMTs
Yi-Feng Wu;D. Kapolnek;J.P. Ibbetson;P. Parikh.
IEEE Transactions on Electron Devices (2001)
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
S. F. Chichibu;A. C. Abare;M. S. Minsky;S. Keller.
Applied Physics Letters (1998)
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