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Sten Heikman

Sten Heikman

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
8350
World Ranking
3542
National Ranking
1308

Materials Science

D-Index
45
Citations
8329
World Ranking
11698
National Ranking
2734

Overview

Sten Heikman is a researcher affiliated with the Cree in the United States. Their academic profile indicates a focus rooted in this indigenous affiliation, which may influence or guide their research interests and affiliations.

There are no recorded recent papers or specific publication venues linked to Sten Heikman. Additionally, there is no available data on frequent co-authors, book publications, or detailed research topics and specific fields of study. This limits the ability to provide a detailed overview of their scientific contributions or collaborative networks.

Given the absence of publications and known research outputs, it is not possible to list specific papers, topics, or academic venues associated with them at this time.

Similarly, there are no awards or honors recorded in connection with this scientist, and they are currently living.

Best Publications

  • AlGaN/AlN/GaN high-power microwave HEMT

    L. Shen;S. Heikman;B. Moran;R. Coffie

  • High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

    Huili Xing;Y. Dora;A. Chini;S. Heikman

  • AlGaN/GaN high electron mobility transistors with InGaN back-barriers

    T. Palacios;A. Chakraborty;S. Heikman;S. Keller

  • Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

    Sten Heikman;Stacia Keller;Steven P. DenBaars;Umesh K. Mishra

  • NORMALLY-OFF TYPE SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD OF THE SAME

    Sten Heikman;Wu Yifeng

  • AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

    I. P. Smorchkova;L. Chen;T. Mates;L. Shen

  • High breakdown GaN HEMT with overlapping gate structure

    N.-Q. Zhang;S. Keller;G. Parish;S. Heikman

  • A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz

    Yifeng Wu;M. Jacob-Mitos;M.L. Moore;S. Heikman

  • Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures

    Sten Heikman;Stacia Keller;Yuan Wu;James S. Speck

  • Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

    C. Poblenz;P. Waltereit;S. Rajan;S. Heikman

  • Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys

    Debdeep Jena;Sten Heikman;Daniel Green;Dario Buttari

  • Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs

    T. Palacios;S. Rajan;A. Chakraborty;S. Heikman

  • Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys

    Debdeep Jena;Sten Heikman;Daniel Green;Ilan B. Yaacov

  • High voltage low current surface emitting LED

    James Ibbetson;Sten Heikman

  • Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures

    S. Keller;G. Parish;P. T. Fini;S. Heikman

  • High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

    L. Shen;R. Coffie;D. Buttari;S. Heikman

  • Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN

    Sten Heikman;Stacia Keller;Steven P. DenBaars;Umesh K. Mishra

  • Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE

    S. Rajan;P. Waltereit;C. Poblenz;S.J. Heikman

  • Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs

    A. Chini;D. Buttari;R. Coffie;L. Shen

  • Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

    I. P. Smorchkova;S. Keller;S. Heikman;C. R. Elsass

  • 12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate

    Alessandro Chini;D. Buttari;R. Coffie;S. Heikman

Frequent Co-Authors

Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Alessandro Chini
Alessandro Chini University of Modena and Reggio Emilia
Arpan Chakraborty
Arpan Chakraborty Apple (United States)
Stacia Keller
Stacia Keller University of California, Santa Barbara
James S. Speck
James S. Speck University of California, Santa Barbara
Yifeng Wu
Yifeng Wu Transphorm Inc.
Debdeep Jena
Debdeep Jena Cornell University
Steven Gao
Steven Gao University of Kent

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