What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Transistor
- Optoelectronics
His primary scientific interests are in Optoelectronics, High-electron-mobility transistor, Transistor, Heterojunction and Doping.
His Optoelectronics research is multidisciplinary, relying on both Fermi gas, Barrier layer, Layer, Molecular beam epitaxy and Buffer.
His High-electron-mobility transistor research incorporates elements of Transconductance, Power density and Linearity.
His Transistor research includes themes of Boost converter, Power electronics and High voltage.
The various areas that Sten Heikman examines in his Heterojunction study include Wide-bandgap semiconductor and Electron mobility.
His Doping research is multidisciplinary, incorporating elements of Metalorganic vapour phase epitaxy, Chemical vapor deposition, Electron density and Analytical chemistry.
His most cited work include:
- Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition (363 citations)
- AlGaN/GaN high electron mobility transistors with InGaN back-barriers (340 citations)
- AlGaN/AlN/GaN high-power microwave HEMT (339 citations)
What are the main themes of his work throughout his whole career to date?
His primary areas of investigation include Optoelectronics, High-electron-mobility transistor, Transistor, Wide-bandgap semiconductor and Gallium nitride.
His Optoelectronics study incorporates themes from Layer and Power density.
The High-electron-mobility transistor study combines topics in areas such as RF power amplifier, Monolithic microwave integrated circuit, Transconductance and Contact resistance.
He has included themes like Ohmic contact, Breakdown voltage, Passivation and Linearity in his Transistor study.
His work carried out in the field of Wide-bandgap semiconductor brings together such families of science as Algan gan, Noise, Silicon carbide and Leakage.
His work deals with themes such as Aluminium nitride, Sheet resistance and Radio frequency, which intersect with Gallium nitride.
He most often published in these fields:
- Optoelectronics (77.88%)
- High-electron-mobility transistor (35.40%)
- Transistor (27.43%)
What were the highlights of his more recent work (between 2009-2015)?
- Optoelectronics (77.88%)
- Light-emitting diode (9.73%)
- Layer (14.16%)
In recent papers he was focusing on the following fields of study:
Sten Heikman mostly deals with Optoelectronics, Light-emitting diode, Layer, Optics and Chip.
His studies link Barrier layer with Optoelectronics.
Sten Heikman combines subjects such as Doping and Dielectric with his study of Light-emitting diode.
Sten Heikman studied Layer and Coating that intersect with Wafer, Light emitter, Light emission, Substrate and Absorption.
The study incorporates disciplines such as High voltage, Voltage and Current in addition to Chip.
His study in Trench is interdisciplinary in nature, drawing from both Transistor and Electron mobility.
Between 2009 and 2015, his most popular works were:
- High voltage low current surface emitting LED (110 citations)
- Normally-off semiconductor devices (51 citations)
- Led package with multiple element light source and encapsulant having planar surfaces (45 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Transistor
- Electrical engineering
Sten Heikman spends much of his time researching Optoelectronics, Layer, Chip, Light-emitting diode and Planar.
Sten Heikman is involved in the study of Optoelectronics that focuses on Wavelength in particular.
His studies deal with areas such as Light extraction in LEDs, Light source, Blanket and Total internal reflection as well as Wavelength.
His research integrates issues of Barrier layer, Trench and Buffer in his study of Electronic engineering.
His biological study focuses on High voltage.
He performs integrative study on Normally off and Semiconductor device.
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