World's Best Scientists 2026 revealed!
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Yu Cao

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 36 5397 5182 785 782 139 4713

Yu Cao publications per year

The chart shows the history of publications by Yu Cao between 2001 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Yu Cao published across 25 years, from 2001 to 2025, averaging 5.8 papers a year. Output peaked at 18 publications in 2011. 7 of the 146 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 2001 to 2025. Vertical axis: number of publications, 0 to 18. Peak 18 publications in 2011. 2001: 1 publication 2002: 0 publications 2003: 0 publications 2004: 3 publications 2005: 1 publication 2006: 6 publications 2007: 6 publications 2008: 9 publications 2009: 5 publications 2010: 10 publications 2011: 18 publications 2012: 12 publications 2013: 16 publications 2014: 6 publications 2015: 3 publications 2016: 7 publications 2017: 5 publications 2018: 2 publications 2019: 6 publications 2020: 17 publications 2021: 4 publications 2022: 1 publication 2023: 1 publication 2024: 4 publications 2025: 3 publications
2001 2025

146 publications in total across all disciplines

View publications per year as a table
Yu Cao: publications per year, 2001 to 2025
Year Publications
2001 1
2002 0
2003 0
2004 3
2005 1
2006 6
2007 6
2008 9
2009 5
2010 10
2011 18
2012 12
2013 16
2014 6
2015 3
2016 7
2017 5
2018 2
2019 6
2020 17
2021 4
2022 1
2023 1
2024 4
2025 3
Total 146
Download as CSV

Yu Cao publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yu Cao sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 134–153 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 139 publications — 11th percentile

11% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355 139
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Yu Cao D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yu Cao sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 36 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211 36
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Yu Cao is affiliated with Wenzhou University in China and has contributed extensively to research in engineering, materials science, and physics and astronomy. Their work predominantly centers on GaN-based semiconductor devices and materials, along with related semiconductor technologies and electrochemical sensors.

The main fields of study for Yu Cao include:

  • Engineering
  • Materials Science
  • Physics and Astronomy

Within these broader areas, they have specialized in several subfields such as:

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Biomedical Engineering

Yu Cao's research topics focus primarily on:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Radio Frequency Integrated Circuit Design
  • Acoustic Wave Resonator Technologies
  • Electrochemical sensors and biosensors

Their publication record shows frequent contributions to a range of venues, with multiple papers published in:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Applied Physics Letters
  • Advanced Functional Materials
  • Sensors and Actuators B Chemical

Among the recent papers by Yu Cao are:

  • "3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination" (2020) published in IEEE Electron Device Letters
  • "RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band" (2020) published in IEEE Electron Device Letters
  • "Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN" (2020) published in Applied Physics Letters
  • "Improved the specificity of peroxidase-like carbonized polydopamine nanotubes with high nitrogen doping for glutathione detection" (2021) published in Sensors and Actuators B Chemical
  • "Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN" (2020) published in Applied Physics Letters

Yu Cao has also worked collaboratively with frequent coauthors, who include:

  • Edward Beam
  • Andy Xie
  • Cathy Lee
  • Ming Xiao
  • Yuhao Zhang

Best Publications

  • High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions

    Yu Cao;Debdeep Jena

  • Heat-Transport Mechanisms in Superlattices

    Yee Kan Koh;Yu Cao;David G. Cahill;Debdeep Jena

  • AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

    T. Zimmermann;D. Deen;Yu Cao;J. Simon

  • 1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    Mingda Zhu;Bo Song;Meng Qi;Zongyang Hu

  • MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

    Jia Guo;Guowang Li;F. Faria;Yu Cao

  • An Experimental Demonstration of GaN CMOS Technology

    Rongming Chu;Yu Cao;Mary Chen;Ray Li

  • 600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor

    Ray Li;Yu Cao;Mary Chen;Rongming Chu

  • High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

    Y. Cao;R. Chu;R. Li;M. Chen

  • 210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

    Ronghua Wang;Guowang Li;O. Laboutin;Yu Cao

  • ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

    Andrew J. Green;James K. Gillespie;Robert C. Fitch;Dennis E. Walker

  • Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

    Debdeep Jena;John Simon;Albert;Wang

  • Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{ m m}$ and $f_{ m T}$

    Dong Seup Lee;Han Wang;Allen Hsu;Mohamed Azize

  • 220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

    Ronghua Wang;Guowang Li;J. Verma;B. Sensale-Rodriguez

  • Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

    Debdeep Jena;John Simon;Albert Kejia Wang;Yu Cao

  • Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

    Guowang Li;Ronghua Wang;Bo Song;J. Verma

  • 3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

    Ming Xiao;Yunwei Ma;Kai Cheng;Kai Liu

  • Compositional modulation and optical emission in AlGaN epitaxial films

    Min Gao;S. T. Bradley;Yu Cao;D. Jena

  • Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering

    Guowang Li;T Zimmermann;Yu Cao;Chuanxin Lian

  • GaAs MOSFET using InAlP native oxide as gate dielectric

    X. Li;Y. Cao;D.C. Hall;P. Fay

  • RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

    Andrew J. Green;Neil Moser;Nicholas C. Miller;Kyle J. Liddy

  • Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs

    Dong Seup Lee;O. Laboutin;Yu Cao;W. Johnson

Frequent Co-Authors

Debdeep Jena
Debdeep Jena Cornell University
Patrick Fay
Patrick Fay University of Notre Dame
Huili Grace Xing
Huili Grace Xing Cornell University
Stephen J. Pearton
Stephen J. Pearton University of Florida
Fan Ren
Fan Ren University of Florida
Gregory L. Snider
Gregory L. Snider University of Notre Dame
Ivan I. Kravchenko
Ivan I. Kravchenko Oak Ridge National Laboratory
Tomas Palacios
Tomas Palacios MIT
Brent P. Gila
Brent P. Gila University of Florida
Han Wang
Han Wang University of Southern California

External Links

Personal website of Yu Cao

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Competency is key in engineering careers. Nowadays, a competency based masters degree offers a personalized learning approach, allowing students to progress by demonstrating skills at their own pace while gaining practical expertise.

Best Scientists Citing Yu Cao

Debdeep Jena

Debdeep Jena

Cornell University

Publications: 103

Huili Grace Xing

Huili Grace Xing

Cornell University

Publications: 70

Yue Hao

Yue Hao

Xidian University

Publications: 58

Stephen J. Pearton

Stephen J. Pearton

University of Florida

Publications: 45

Fan Ren

Fan Ren

University of Florida

Publications: 41

Jincheng Zhang

Jincheng Zhang

Xidian University

Publications: 41

Tomas Palacios

Tomas Palacios

MIT

Publications: 36

Umesh K. Mishra

Umesh K. Mishra

University of California, Santa Barbara

Publications: 34

Kazuki Nomoto

Kazuki Nomoto

Cornell University

Publications: 31

Patrick Fay

Patrick Fay

University of Notre Dame

Publications: 31

Stacia Keller

Stacia Keller

University of California, Santa Barbara

Publications: 30

Oliver Ambacher

Oliver Ambacher

University of Freiburg

Publications: 28

Elison Matioli

Elison Matioli

École Polytechnique Fédérale de Lausanne

Publications: 22

Kevin J. Chen

Kevin J. Chen

Hong Kong University of Science and Technology

Publications: 20

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A. Y. Polyakov

National University of Science and Technology

Publications: 20

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Siddharth Rajan

The Ohio State University

Publications: 20

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