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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
4713
World Ranking
5397
National Ranking
784

Overview

Yu Cao is affiliated with Wenzhou University in China and has contributed extensively to research in engineering, materials science, and physics and astronomy. Their work predominantly centers on GaN-based semiconductor devices and materials, along with related semiconductor technologies and electrochemical sensors.

The main fields of study for Yu Cao include:

  • Engineering
  • Materials Science
  • Physics and Astronomy

Within these broader areas, they have specialized in several subfields such as:

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Biomedical Engineering

Yu Cao's research topics focus primarily on:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Radio Frequency Integrated Circuit Design
  • Acoustic Wave Resonator Technologies
  • Electrochemical sensors and biosensors

Their publication record shows frequent contributions to a range of venues, with multiple papers published in:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Applied Physics Letters
  • Advanced Functional Materials
  • Sensors and Actuators B Chemical

Among the recent papers by Yu Cao are:

  • "3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination" (2020) published in IEEE Electron Device Letters
  • "RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band" (2020) published in IEEE Electron Device Letters
  • "Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN" (2020) published in Applied Physics Letters
  • "Improved the specificity of peroxidase-like carbonized polydopamine nanotubes with high nitrogen doping for glutathione detection" (2021) published in Sensors and Actuators B Chemical
  • "Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN" (2020) published in Applied Physics Letters

Yu Cao has also worked collaboratively with frequent coauthors, who include:

  • Edward Beam
  • Andy Xie
  • Cathy Lee
  • Ming Xiao
  • Yuhao Zhang

Best Publications

  • High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions

    Yu Cao;Debdeep Jena

  • Heat-Transport Mechanisms in Superlattices

    Yee Kan Koh;Yu Cao;David G. Cahill;Debdeep Jena

  • AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

    T. Zimmermann;D. Deen;Yu Cao;J. Simon

  • 1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    Mingda Zhu;Bo Song;Meng Qi;Zongyang Hu

  • MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

    Jia Guo;Guowang Li;F. Faria;Yu Cao

  • An Experimental Demonstration of GaN CMOS Technology

    Rongming Chu;Yu Cao;Mary Chen;Ray Li

  • 600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor

    Ray Li;Yu Cao;Mary Chen;Rongming Chu

  • High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

    Y. Cao;R. Chu;R. Li;M. Chen

  • 210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

    Ronghua Wang;Guowang Li;O. Laboutin;Yu Cao

  • ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

    Andrew J. Green;James K. Gillespie;Robert C. Fitch;Dennis E. Walker

  • Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

    Debdeep Jena;John Simon;Albert;Wang

  • Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{ m m}$ and $f_{ m T}$

    Dong Seup Lee;Han Wang;Allen Hsu;Mohamed Azize

  • 220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

    Ronghua Wang;Guowang Li;J. Verma;B. Sensale-Rodriguez

  • Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

    Debdeep Jena;John Simon;Albert Kejia Wang;Yu Cao

  • Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

    Guowang Li;Ronghua Wang;Bo Song;J. Verma

  • 3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

    Ming Xiao;Yunwei Ma;Kai Cheng;Kai Liu

  • Compositional modulation and optical emission in AlGaN epitaxial films

    Min Gao;S. T. Bradley;Yu Cao;D. Jena

  • Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering

    Guowang Li;T Zimmermann;Yu Cao;Chuanxin Lian

  • GaAs MOSFET using InAlP native oxide as gate dielectric

    X. Li;Y. Cao;D.C. Hall;P. Fay

  • RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

    Andrew J. Green;Neil Moser;Nicholas C. Miller;Kyle J. Liddy

  • Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs

    Dong Seup Lee;O. Laboutin;Yu Cao;W. Johnson

Frequent Co-Authors

Debdeep Jena
Debdeep Jena Cornell University
Patrick Fay
Patrick Fay University of Notre Dame
Huili Grace Xing
Huili Grace Xing Cornell University
Stephen J. Pearton
Stephen J. Pearton University of Florida
Fan Ren
Fan Ren University of Florida
Gregory L. Snider
Gregory L. Snider University of Notre Dame
Ivan I. Kravchenko
Ivan I. Kravchenko Oak Ridge National Laboratory
Brent P. Gila
Brent P. Gila University of Florida
Han Wang
Han Wang University of Southern California

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