World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
41
Citations
6607
World Ranking
4309
National Ranking
72

Elison Matioli publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Elison Matioli sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 156 publications — 16th percentile

16% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Elison Matioli D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Elison Matioli sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 41 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Elison Matioli is affiliated with the École Polytechnique Fédérale de Lausanne in Switzerland and specializes in research across engineering, physics and astronomy, and materials science. Their work primarily focuses on electrical and electronic engineering, condensed matter physics, and electronic, optical, and magnetic materials. The scientist also investigates topics related to materials chemistry as well as atomic and molecular physics and optics.

The main research areas of Elison Matioli include GaN-based semiconductor devices and materials, Ga2O3 and related materials, silicon carbide semiconductor technologies, and semiconductor materials and devices. Their work further covers ZnO doping and properties, advanced DC-DC converters, and terahertz technology and applications.

Among the recent publications authored or co-authored by Matioli are:

  • Co-designing electronics with microfluidics for more sustainable cooling, 2020, Nature
  • GaN-based power devices: Physics, reliability, and perspectives, 2021, Journal of Applied Physics
  • Nanoplasma-enabled picosecond switches for ultrafast electronics, 2020, Nature
  • Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K, 2020, IEEE Transactions on Power Electronics
  • Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies, 2020, IEEE Transactions on Power Electronics

Publication venues frequently featuring Matioli's work include:

  • IEEE Transactions on Power Electronics
  • IEEE Electron Device Letters
  • Nature
  • Applied Physics Letters
  • Japanese Journal of Applied Physics

Matioli frequently collaborates with other researchers. Some of their most common co-authors are Mohammad Samizadeh Nikoo, Luca Nela, Armin Jafari, Remco van Erp, and Nirmana Perera.

Best Publications

  • Co-designing electronics with microfluidics for more sustainable cooling.

    Remco van Erp;Reza Soleimanzadeh;Luca Nela;Georgios Kampitsis

  • GaN-based power devices: Physics, reliability, and perspectives

    Matteo Meneghini;Carlo De Santi;Idriss Abid;Matteo Buffolo

  • High-brightness polarized light-emitting diodes

    Elison Matioli;Stuart Brinkley;Kathryn M Kelchner;Yan-Ling Hu

  • Tri-Gate Normally-Off GaN Power MISFET

    Bin Lu;E. Matioli;T. Palacios

  • High internal and external quantum efficiency InGaN/GaN solar cells

    Elison Matioli;Carl Neufeld;Michael Iza;Samantha C. Cruz

  • Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

    K. Mcgroddy;A. David;Elison Matioli;M. Iza

  • Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs

    Elison Matioli;Claude Weisbuch;Claude Weisbuch

  • High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals

    Elison Matioli;Elizabeth Rangel;Micheal Iza;Blaise Fleury

  • GaN-on-Si Quasi-Vertical Power MOSFETs

    Chao Liu;Riyaz Abdul Khadar;Elison Matioli

  • Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal

    T. A. Truong;L. M. Campos;Elison Matioli;I. Meinel

  • Nanoplasma-enabled picosecond switches for ultrafast electronics

    Mohammad Samizadeh Nikoo;Armin Jafari;Nirmana Perera;Minghua Zhu

  • Fully Vertical GaN-on-Si power MOSFETs

    Riyaz Mohammed Abdul Khadar;Chao Liu;Reza Soleimanzadeh;Elison Matioli

  • 820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2

    Riyaz Abdul Khadar;Chao Liu;Liyang Zhang;Peng Xiang

  • Efficient Microchannel Cooling of Multiple Power Devices With Compact Flow Distribution for High Power-Density Converters

    Remco van Erp;Georgios Kampitsis;Elison Matioli

  • High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

    Jun Ma;Elison Matioli

  • Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

    Luca Nela;Nirmana Perera;Catherine Erine;Elison Matioli

  • Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes

    Elizabeth Rangel;Elison Matioli;Yong-Seok Choi;Claude Weisbuch

  • Multi-channel nanowire devices for efficient power conversion

    L. Nela;J. Ma;J. Ma;C. Erine;P. Xiang

  • High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

    J. R. Lang;C. J. Neufeld;C. A. Hurni;S. C. Cruz

  • Comparison of Wide-Band-Gap Technologies for Soft-Switching Losses at High Frequencies

    Armin Jafari;Mohammad Samizadeh Nikoo;Nirmana Perera;Halil Kerim Yildirim

  • GaN light-emitting diodes with Archimedean lattice photonic crystals

    Aurélien David;Tetsuo Fujii;Elison Matioli;Rajat Sharma

  • GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

    Aurélien David;Brendan Moran;Kelly McGroddy;Elison Matioli

  • Fully Soft-Switched High Step-Up Nonisolated Three-Port DC–DC Converter Using GaN HEMTs

    Rasoul Faraji;Hosein Farzanehfard;Georgios Kampitsis;Marco Mattavelli

  • 2.5λ microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process

    Yong-Seok Choi;Michael Iza;Elison Matioli;Gregor Koblmüller

  • CdSe nanorods dominate photocurrent of hybrid CdSe-P3HT photovoltaic cell.

    Martin Schierhorn;Shannon W. Boettcher;Jeffrey H. Peet;Elison Matioli

Frequent Co-Authors

Claude Weisbuch
Claude Weisbuch University of California, Santa Barbara
James S. Speck
James S. Speck University of California, Santa Barbara
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Aurelien J. F. David
Aurelien J. F. David Google (United States)
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
Gregor Koblmüller
Gregor Koblmüller Technical University of Munich
Evelyn L. Hu
Evelyn L. Hu Harvard University
Stacia Keller
Stacia Keller University of California, Santa Barbara
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara

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