2015 - IEEE Fellow For contributions to light emitting diodes and vertical cavity surface emitting lasers
2013 - SPIE Fellow
2012 - OSA Fellows For leadership in high-brightness light-emitting diode and vertical cavity surface-emitting laser education and technology.
Hao-Chung Kuo mainly investigates Optoelectronics, Light-emitting diode, Optics, Diode and Wide-bandgap semiconductor. His Optoelectronics research incorporates themes from Etching, Gallium nitride and Nanorod. His Light-emitting diode study also includes fields such as
His Optics study integrates concerns from other disciplines, such as Quantum dot and Luminous efficacy. His Diode study combines topics from a wide range of disciplines, such as Wafer, Scattering, Photon, Quantum well and Phosphor. His Quantum efficiency research focuses on Photoluminescence and how it relates to Nanotechnology, Cathodoluminescence and Quantum-confined Stark effect.
His scientific interests lie mostly in Optoelectronics, Light-emitting diode, Optics, Diode and Gallium nitride. His research brings together the fields of Laser and Optoelectronics. His Light-emitting diode research is multidisciplinary, incorporating perspectives in Etching, Nanorod, Electroluminescence and Sapphire.
The concepts of his Diode study are interwoven with issues in Color temperature, Spontaneous emission, Luminous efficacy, Ultraviolet and Phosphor. As a part of the same scientific family, he mostly works in the field of Gallium nitride, focusing on Epitaxy and, on occasion, Chemical vapor deposition. Hao-Chung Kuo studied Photoluminescence and Quantum well that intersect with Metalorganic vapour phase epitaxy.
His primary scientific interests are in Optoelectronics, Light-emitting diode, Diode, Quantum dot and Optics. As part of his studies on Optoelectronics, he often connects relevant areas like Vertical-cavity surface-emitting laser. His studies in Light-emitting diode integrate themes in fields like Gallium nitride, Spontaneous emission, Gamut and Atomic layer deposition.
Hao-Chung Kuo interconnects Green-light, Color temperature, White light and Ultraviolet in the investigation of issues within Diode. Hao-Chung Kuo has researched Quantum dot in several fields, including Photonics, Energy conversion efficiency, Color rendering index, Luminous efficacy and Perovskite. His Chemical vapor deposition research is multidisciplinary, relying on both Layer and Metalorganic vapour phase epitaxy.
Hao-Chung Kuo spends much of his time researching Optoelectronics, Light-emitting diode, Optics, Diode and Quantum dot. His study connects Metalorganic vapour phase epitaxy and Optoelectronics. His Light-emitting diode study integrates concerns from other disciplines, such as Luminance, Lithography, Gamut, Polarization and Phosphor.
His work in the fields of Vertical-cavity surface-emitting laser, Optical power, Laser linewidth and Total internal reflection overlaps with other areas such as Quadrature amplitude modulation. His research investigates the connection with Diode and areas like Color temperature which intersect with concerns in White light. His Quantum dot study incorporates themes from Photonics, Color rendering index, Luminous efficacy and Electroluminescence.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films
Shou Yi Kuo;Wei Chun Chen;Fang I. Lai;Chin Pao Cheng.
Journal of Crystal Growth (2006)
CW lasing of current injection blue GaN-based vertical cavity surface emitting laser
Tien-Chang Lu;Chih Chiang Kao;Hao-Chung Kuo;Gen Sheng Huang.
Applied Physics Letters (2008)
Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates
Y.J. Lee;J.M. Hwang;T.C. Hsu;M.H. Hsieh.
IEEE Photonics Technology Letters (2006)
Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer
C. H. Wang;C. C. Ke;C. Y. Lee;S. P. Chang;S. P. Chang.
Applied Physics Letters (2010)
Study of GaN light-emitting diodes fabricated by laser lift-off technique
Chen Fu Chu;Fang I. Lai;Jung Tang Chu;Chang Chin Yu.
Journal of Applied Physics (2004)
450-nm GaN laser diode enables high-speed visible light communication with 9-Gbps QAM-OFDM
Yu Chieh Chi;Dan Hua Hsieh;Cheng Ting Tsai;Hsiang Yu Chen.
Optics Express (2015)
4.8 Gbit/s 16-QAM-OFDM transmission based on compact 450-nm laser for underwater wireless optical communication
Hassan M. Oubei;Jose R. Duran;Bilal Janjua;Huai Yung Wang.
Optics Express (2015)
Efficiency Enhancement of GaAs Photovoltaics Employing Antireflective Indium Tin Oxide Nanocolumns
Pei-Chen Yu;Chia Hua Chang;Ching Hua Chiu;Chin Sheng Yang.
Advanced Materials (2009)
Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology
Tingzhu Wu;Chin Wei Sher;Chin Wei Sher;Yue Lin;Chun Fu Lee.
Applied Sciences (2018)
Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
Shih Chun Ling;Tien-chang Lu;Shih Pang Chang;Shih Pang Chang;Jun Rong Chen.
Applied Physics Letters (2010)
Profile was last updated on December 6th, 2021.
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