World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
12355
World Ranking
2501
National Ranking
417

Overview

Bo Zhang is affiliated with the University of Electronic Science and Technology of China. Their primary field of study is Engineering, with a focus on Electrical and Electronic Engineering. The scientist's research spans multiple subfields including Mechanical Engineering, Condensed Matter Physics, Biomedical Engineering, and Materials Chemistry.

The scientist has contributed significantly to various topics related to semiconductor technologies and devices. Key research topics include:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • GaN-based semiconductor devices and materials
  • Electrostatic Discharge in Electronics
  • Ga2O3 and related materials
  • Electromagnetic Compatibility and Noise Suppression

Bo Zhang's recent publications reflect diverse interests within electronics and materials science. Select papers include:

  • "GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review," 2020, IEEE Access
  • "LLC resonant converter topologies and industrial applications - A review," 2020, Chinese Journal of Electrical Engineering
  • "The research on 220GHz multicarrier high-speed communication system," 2020, China Communications
  • "Self-healing metal-enamel composite coating and its protection for TiAl alloy against oxidation under thermal shock in NaCl solution," 2020, Corrosion Science
  • "Tirofiban for Stroke without Large or Medium-Sized Vessel Occlusion," 2023, New England Journal of Medicine

The frequent co-authors collaborating with Bo Zhang include:

  • Wanjun Chen
  • Ruize Sun
  • Zhaoji Li
  • Ming Qiao
  • Xiaochuan Deng

The scientist's work has been published in various venues, with a notable concentration in electronics and power-related conferences and journals. Frequent publication venues are:

  • IEEE Transactions on Electron Devices
  • 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
  • arXiv (Cornell University)
  • IEEE Transactions on Power Electronics
  • IEEE Electron Device Letters

Best Publications

  • A survey on terahertz communications

    Zhi Chen;Xinying Ma;Bo Zhang;Yaxin Zhang

  • Gbps terahertz external modulator based on a composite metamaterial with a double-channel heterostructure.

    Yaxin Zhang;Shen Qiao;Shixiong Liang;Zhenhua Wu

  • GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

    Ruize Sun;Jingxue Lai;Wanjun Chen;Bo Zhang

  • A Novel 700-V SOI LDMOS With Double-Sided Trench

    Xiaorong Luo;Bo Zhang;Zhaoji Li;Yufeng Guo

  • A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications

    Xuan Li;Junning Jiang;Alex Q. Huang;Suxuan Guo

  • Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN x Passivation and High-Temperature Gate Recess

    Yijun Shi;Sen Huang;Qilong Bao;Xinhua Wang

  • New thin-film power MOSFETs with a buried oxide double step structure

    Baoxing Duan;Bo Zhang;Zhaoji Li

  • A Novel 220-GHz GaN Diode On-Chip Tripler With High Driven Power

    Bo Zhang;Dongfeng Ji;Deng Fang;Shixiong Liang

  • Understanding switching losses in SiC MOSFET: Toward lossless switching

    Xuan Li;Liqi Zhang;Suxuan Guo;Yang Lei

  • An Ultrafast Adaptively Biased Capacitorless LDO With Dynamic Charging Control

    Xin Ming;Qiang Li;Ze-kun Zhou;Bo Zhang

  • High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode

    Qi Zhou;Yang Jin;Yuanyuan Shi;Jinyu Mou

  • A 1.6-V 25- $\mu$ A 5-ppm/ $^{\circ}$ C Curvature-Compensated Bandgap Reference

    Ze-Kun Zhou;Yue Shi;Zhi Huang;Pei-Sheng Zhu

  • Large phase modulation of THz wave via an enhanced resonant active HEMT metasurface

    Yaxin Zhang;Yuncheng Zhao;Shixiong Liang;Bo Zhang

  • 7.6 V Threshold Voltage High-Performance Normally-Off Al 2 O 3 /GaN MOSFET Achieved by Interface Charge Engineering

    Qi Zhou;Li Liu;Anbang Zhang;Bowen Chen

  • The research on 220GHz multicarrier high-speed communication system

    Zhongqian Niu;Bo Zhang;Jiale Wang;Ke Liu

  • Field Enhancement for Dielectric Layer of High-Voltage Devices on Silicon on Insulator

    Bo Zhang;Zhaoji Li;Shengdong Hu;Xiaorong Luo

  • High-Voltage LDMOS With Charge-Balanced Surface Low On-Resistance Path Layer

    Bo Zhang;Wenlian Wang;Wanjun Chen;Zehong Li

  • A new structure and its analytical model for the electric field and breakdown voltage of SOI high voltage device with variable-k dielectric buried layer

    Xiaorong Luo;Bo Zhang;Zhaoji Li

  • An Ultralow-Power Fast-Transient Capacitor-Free Low-Dropout Regulator With Assistant Push–Pull Output Stage

    Xi Qu;Ze-Kun Zhou;Bo Zhang;Zhao-Ji Li

  • A D-Band Manifold Triplexer With High Isolation Utilizing Novel Waveguide Dual-Mode Filters

    Unknown

  • Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

    Yang Liu;Bo Zhang;Yinian Feng;Xiaolin Lv

  • Ultralow Specific On-Resistance High-Voltage SOI Lateral MOSFET

    Xiaorong Luo;Jie Fan;Yuangang Wang;Tianfei Lei

Frequent Co-Authors

Alex Q. Huang
Alex Q. Huang The University of Texas at Austin
Kaijun Song
Kaijun Song University of Electronic Science and Technology of China
Yu Jian Cheng
Yu Jian Cheng University of Electronic Science and Technology of China
Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Sen Huang
Sen Huang Chinese Academy of Sciences
Zhi Chen
Zhi Chen University of Kentucky
Jin Wei
Jin Wei Peking University
Florin Udrea
Florin Udrea University of Cambridge
Yung C. Liang
Yung C. Liang National University of Singapore
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore

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