World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
12355
World Ranking
2501
National Ranking
418

Bo Zhang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Bo Zhang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 913 publications — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Bo Zhang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Bo Zhang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 52 D-Index — 64th percentile

64% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Bo Zhang is affiliated with the University of Electronic Science and Technology of China. Their primary field of study is Engineering, with a focus on Electrical and Electronic Engineering. The scientist's research spans multiple subfields including Mechanical Engineering, Condensed Matter Physics, Biomedical Engineering, and Materials Chemistry.

The scientist has contributed significantly to various topics related to semiconductor technologies and devices. Key research topics include:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • GaN-based semiconductor devices and materials
  • Electrostatic Discharge in Electronics
  • Ga2O3 and related materials
  • Electromagnetic Compatibility and Noise Suppression

Bo Zhang's recent publications reflect diverse interests within electronics and materials science. Select papers include:

  • "GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review," 2020, IEEE Access
  • "LLC resonant converter topologies and industrial applications - A review," 2020, Chinese Journal of Electrical Engineering
  • "The research on 220GHz multicarrier high-speed communication system," 2020, China Communications
  • "Self-healing metal-enamel composite coating and its protection for TiAl alloy against oxidation under thermal shock in NaCl solution," 2020, Corrosion Science
  • "Tirofiban for Stroke without Large or Medium-Sized Vessel Occlusion," 2023, New England Journal of Medicine

The frequent co-authors collaborating with Bo Zhang include:

  • Wanjun Chen
  • Ruize Sun
  • Zhaoji Li
  • Ming Qiao
  • Xiaochuan Deng

The scientist's work has been published in various venues, with a notable concentration in electronics and power-related conferences and journals. Frequent publication venues are:

  • IEEE Transactions on Electron Devices
  • 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
  • arXiv (Cornell University)
  • IEEE Transactions on Power Electronics
  • IEEE Electron Device Letters

Best Publications

  • A survey on terahertz communications

    Zhi Chen;Xinying Ma;Bo Zhang;Yaxin Zhang

  • Gbps terahertz external modulator based on a composite metamaterial with a double-channel heterostructure.

    Yaxin Zhang;Shen Qiao;Shixiong Liang;Zhenhua Wu

  • GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

    Ruize Sun;Jingxue Lai;Wanjun Chen;Bo Zhang

  • A Novel 700-V SOI LDMOS With Double-Sided Trench

    Xiaorong Luo;Bo Zhang;Zhaoji Li;Yufeng Guo

  • A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications

    Xuan Li;Junning Jiang;Alex Q. Huang;Suxuan Guo

  • Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN x Passivation and High-Temperature Gate Recess

    Yijun Shi;Sen Huang;Qilong Bao;Xinhua Wang

  • New thin-film power MOSFETs with a buried oxide double step structure

    Baoxing Duan;Bo Zhang;Zhaoji Li

  • A Novel 220-GHz GaN Diode On-Chip Tripler With High Driven Power

    Bo Zhang;Dongfeng Ji;Deng Fang;Shixiong Liang

  • Understanding switching losses in SiC MOSFET: Toward lossless switching

    Xuan Li;Liqi Zhang;Suxuan Guo;Yang Lei

  • An Ultrafast Adaptively Biased Capacitorless LDO With Dynamic Charging Control

    Xin Ming;Qiang Li;Ze-kun Zhou;Bo Zhang

  • High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode

    Qi Zhou;Yang Jin;Yuanyuan Shi;Jinyu Mou

  • A 1.6-V 25- $\mu$ A 5-ppm/ $^{\circ}$ C Curvature-Compensated Bandgap Reference

    Ze-Kun Zhou;Yue Shi;Zhi Huang;Pei-Sheng Zhu

  • Large phase modulation of THz wave via an enhanced resonant active HEMT metasurface

    Yaxin Zhang;Yuncheng Zhao;Shixiong Liang;Bo Zhang

  • 7.6 V Threshold Voltage High-Performance Normally-Off Al 2 O 3 /GaN MOSFET Achieved by Interface Charge Engineering

    Qi Zhou;Li Liu;Anbang Zhang;Bowen Chen

  • The research on 220GHz multicarrier high-speed communication system

    Zhongqian Niu;Bo Zhang;Jiale Wang;Ke Liu

  • Field Enhancement for Dielectric Layer of High-Voltage Devices on Silicon on Insulator

    Bo Zhang;Zhaoji Li;Shengdong Hu;Xiaorong Luo

  • High-Voltage LDMOS With Charge-Balanced Surface Low On-Resistance Path Layer

    Bo Zhang;Wenlian Wang;Wanjun Chen;Zehong Li

  • A new structure and its analytical model for the electric field and breakdown voltage of SOI high voltage device with variable-k dielectric buried layer

    Xiaorong Luo;Bo Zhang;Zhaoji Li

  • An Ultralow-Power Fast-Transient Capacitor-Free Low-Dropout Regulator With Assistant Push–Pull Output Stage

    Xi Qu;Ze-Kun Zhou;Bo Zhang;Zhao-Ji Li

  • A D-Band Manifold Triplexer With High Isolation Utilizing Novel Waveguide Dual-Mode Filters

    Unknown

  • Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array

    Yang Liu;Bo Zhang;Yinian Feng;Xiaolin Lv

  • Ultralow Specific On-Resistance High-Voltage SOI Lateral MOSFET

    Xiaorong Luo;Jie Fan;Yuangang Wang;Tianfei Lei

Frequent Co-Authors

Alex Q. Huang
Alex Q. Huang The University of Texas at Austin
Xiao Dong Chen
Xiao Dong Chen Soochow University
Kaijun Song
Kaijun Song University of Electronic Science and Technology of China
Yu Jian Cheng
Yu Jian Cheng University of Electronic Science and Technology of China
Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Sen Huang
Sen Huang Chinese Academy of Sciences
Zhi Chen
Zhi Chen University of Kentucky
Jin Wei
Jin Wei Peking University
Florin Udrea
Florin Udrea University of Cambridge
Lei Shu
Lei Shu Nanjing Agricultural University

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