World's Best Scientists 2026 revealed!
Zhangming Zhu

Zhangming Zhu

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
6894
World Ranking
4667
National Ranking
696

Overview

Zhangming Zhu is affiliated with Xidian University in China and has a substantial publication record in the field of engineering, with a focus on electrical and electronic engineering. Their research spans several subfields and main topics within this domain.

The primary fields of study for Zhu include:

  • Engineering

Within this broad field, the subfields Zhu concentrates on are:

  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Aerospace Engineering
  • Instrumentation
  • Cellular and Molecular Neuroscience

Zhu's main topics of work cover areas of analog and digital circuit design, sensor technologies, and microwave engineering. These topics include:

  • Analog and Mixed-Signal Circuit Design
  • CCD and CMOS Imaging Sensors
  • Radio Frequency Integrated Circuit Design
  • Microwave Engineering and Waveguides
  • Advancements in PLL and VCO Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Optical Sensing Technologies

The scientist has frequently published in several prominent venues, indicating their active contribution to peer-reviewed scholarly journals. Key publication venues include:

  • IEEE Transactions on Circuits and Systems I Regular Papers
  • IEEE Transactions on Circuits & Systems II Express Briefs
  • Microelectronics Journal
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • IEEE Transactions on Components Packaging and Manufacturing Technology

Zhu has collaborated regularly with several co-authors, illustrating a strong network in their research community. Frequent collaborators are:

  • Shubin Liu
  • Ruixue Ding
  • Rui Ma
  • Xiaoxian Liu
  • Lei Wang

Recent scholarly work from Zhu includes the following publications:

  • "Recent progress of integrated circuits and optoelectronic chips," 2021, Science China Information Sciences
  • "A 14-b 20-MS/s 78.8 dB-SNDR Energy-Efficient SAR ADC With Background Mismatch Calibration and Noise-Reduction Techniques for Portable Medical Ultrasound Systems," 2022, IEEE Transactions on Biomedical Circuits and Systems
  • "A Sub-200nW All-in-One Bandgap Voltage and Current Reference Without Amplifiers," 2020, IEEE Transactions on Circuits & Systems II Express Briefs
  • "A Reconfigurable 12-to-18-Bit Dynamic Zoom ADC With Pole-Optimized Technique," 2023, IEEE Transactions on Circuits and Systems I Regular Papers
  • "Compact Bandpass Filter and Diplexer With Wide-Stopband Suppression Based on Balanced Substrate-Integrated Waveguide," 2020, IEEE Transactions on Microwave Theory and Techniques

Best Publications

  • V CM -based monotonic capacitor switching scheme for SAR ADC

    Zhangming Zhu;Yu Xiao;Xiaoli Song

  • A 0.6-V 38-nW 9.4-ENOB 20-kS/s SAR ADC in 0.18- $\mu{ m m}$ CMOS for Medical Implant Devices

    Zhangming Zhu;Yuhua Liang

  • A 12-Bit 10 MS/s SAR ADC With High Linearity and Energy-Efficient Switching

    Shubin Liu;Yi Shen;Zhangming Zhu

  • Recent progress of integrated circuits and optoelectronic chips

    Yue Hao;Shuiying Xiang;Genquan Han;Jincheng Zhang

  • Novel low power full adder cells in 180nm CMOS technology

    Dan Wang;Maofeng Yang;Wu Cheng;Xuguang Guan

  • A Second-Order Noise-Shaping SAR ADC With Passive Integrator and Tri-Level Voting

    Haoyu Zhuang;Wenjuan Guo;Jiaxin Liu;He Tang

  • A 0.45-V, 14.6-nW CMOS Subthreshold Voltage Reference With No Resistors and No BJTs

    Yutao Wang;Zhangming Zhu;Jiaojiao Yao;Yintang Yang

  • A 6-to-10-Bit 0.5 V-to-0.9 V Reconfigurable 2 MS/s Power Scalable SAR ADC in 0.18 CMOS

    Zhangming Zhu;Zheng Qiu;Maliang Liu;Ruixue Ding

  • A 14-b 20-MS/s 78.8 dB-SNDR Energy-Efficient SAR ADC With Background Mismatch Calibration and Noise-Reduction Techniques for Portable Medical Ultrasound Systems

    Unknown

  • A Sub-200nW All-in-One Bandgap Voltage and Current Reference Without Amplifiers

    Wenbin Huang;Lianxi Liu;Zhangming Zhu

  • A 0.45 V, Nano-Watt 0.033% Line Sensitivity MOSFET-Only Sub-Threshold Voltage Reference With no Amplifiers

    Zhangming Zhu;Jin Hu;Yutao Wang

  • A Reconfigurable 12-to-18-Bit Dynamic Zoom ADC With Pole-Optimized Technique

    Unknown

  • Ultra-Compact TSV-Based L-C Low-Pass Filter With Stopband Up to 40 GHz for Microwave Application

    Xiangkun Yin;Zhangming Zhu;Yang Liu;Qijun Lu

  • Electrical Modeling and Characterization of Shield Differential Through-Silicon Vias

    Qijun Lu;Zhangming Zhu;Yintang Yang;Ruixue Ding

  • Compact Bandpass Filter and Diplexer With Wide-Stopband Suppression Based on Balanced Substrate-Integrated Waveguide

    Xiaoxian Liu;Zhangming Zhu;Yang Liu;Qijun Lu

  • A 9.1ENOB 200MS/s Asynchronous SAR ADC With Hybrid Single-Ended/Differential DAC in 55-nm CMOS for Image Sensing Signals

    Yuhua Liang;Ruixue Ding;Zhangming Zhu

  • A Reconfigurable 10-to-12-b 80-to-20-MS/s Bandwidth Scalable SAR ADC

    Yi Shen;Zhangming Zhu;Shubin Liu;Yintang Yang

  • A Low Walk Error Analog Front-End Circuit With Intensity Compensation for Direct ToF LiDAR

    Xiayu Wang;Rui Ma;Dong Li;Hao Zheng

  • A 7-bit 900-MS/s 2-Then-3-bit/cycle SAR ADC With Background Offset Calibration

    Dengquan Li;Zhangming Zhu;Jiaxin Liu;Haoyu Zhuang

  • Metal Proportion Optimization of Annular Through-Silicon via Considering Temperature and Keep-Out Zone

    Xiangkun Yin;Zhangming Zhu;Yintang Yang;Ruixue Ding

  • A 19-nW 0.7-V CMOS Voltage Reference With No Amplifiers and No Clock Circuits

    Haoyu Zhuang;Zhangming Zhu;Yintang Yang

  • A 60-m Range 6.16-mW Laser-Power Linear-Mode LiDAR System With Multiplex ADC/TDC in 65-nm CMOS

    Maliang Liu;Haizhu Liu;Xiongzheng Li;Zhangming Zhu

  • Utilization of Negative-Capacitance FETs to Boost Analog Circuit Performances

    Yuhua Liang;Zhangming Zhu;Xueqing Li;Sumeet Kumar Gupta

  • Wideband Substrate Integrated Waveguide Bandpass Filter Based on 3-D ICs

    Xiaoxian Liu;Zhangming Zhu;Yang Liu;Qijun Lu

  • An Effective Approach of Reducing the Keep-Out-Zone Induced by Coaxial Through-Silicon-Via

    Fengjuan Wang;Zhangming Zhu;Yintang Yang;Xiangkun Yin

Frequent Co-Authors

Nan Sun
Nan Sun Tsinghua University
Tie Jun Cui
Tie Jun Cui Southeast University
Sumeet Kumar Gupta
Sumeet Kumar Gupta Purdue University West Lafayette
Suman Datta
Suman Datta Georgia Institute of Technology
Jürgen Eckert
Jürgen Eckert University of Leoben
Ke An
Ke An Oak Ridge National Laboratory
Thomas Gemming
Thomas Gemming Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden
Yang Ren
Yang Ren City University of Hong Kong
Zushu Hu
Zushu Hu Chinese Academy of Sciences
Hong Zhou
Hong Zhou Xidian University

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