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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 38 4893 4695 89 89 156 6317

Chih-Cheng Hsieh publications per year

The chart shows the history of publications by Chih-Cheng Hsieh between 1996 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Chih-Cheng Hsieh published across 30 years, from 1996 to 2025, averaging 5.6 papers a year. Output peaked at 16 publications in 2023. 17 of the 168 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1996 to 2025. Vertical axis: number of publications, 0 to 16. Peak 16 publications in 2023. 1996: 1 publication 1997: 2 publications 1998: 1 publication 1999: 0 publications 2000: 0 publications 2001: 0 publications 2002: 0 publications 2003: 0 publications 2004: 0 publications 2005: 1 publication 2006: 0 publications 2007: 0 publications 2008: 4 publications 2009: 2 publications 2010: 1 publication 2011: 12 publications 2012: 13 publications 2013: 8 publications 2014: 7 publications 2015: 7 publications 2016: 15 publications 2017: 6 publications 2018: 12 publications 2019: 14 publications 2020: 8 publications 2021: 15 publications 2022: 6 publications 2023: 16 publications 2024: 9 publications 2025: 8 publications
1996 2025

168 publications in total across all disciplines

View publications per year as a table
Chih-Cheng Hsieh: publications per year, 1996 to 2025
Year Publications
1996 1
1997 2
1998 1
1999 0
2000 0
2001 0
2002 0
2003 0
2004 0
2005 1
2006 0
2007 0
2008 4
2009 2
2010 1
2011 12
2012 13
2013 8
2014 7
2015 7
2016 15
2017 6
2018 12
2019 14
2020 8
2021 15
2022 6
2023 16
2024 9
2025 8
Total 168
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Chih-Cheng Hsieh publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Chih-Cheng Hsieh sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 154–173 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 156 publications — 16th percentile

16% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403 156
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Chih-Cheng Hsieh D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Chih-Cheng Hsieh sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 38 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 38 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214 38
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Chih-Cheng Hsieh is affiliated with National Tsing Hua University in Taiwan and primarily works in the field of engineering, with a strong focus on electrical and electronic engineering. Their research covers multiple subfields, including artificial intelligence, cellular and molecular neuroscience, computer vision and pattern recognition, and biomedical engineering.

The research topics that Hsieh has extensively contributed to include:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • CCD and CMOS Imaging Sensors
  • Neuroscience and Neural Engineering
  • Low-power high-performance VLSI design
  • Advanced Neural Network Applications

Hsieh has published numerous papers, with frequent appearances in high-profile venues such as the IEEE Journal of Solid-State Circuits, the 2022 IEEE International Solid-State Circuits Conference (ISSCC), and Nature Electronics. Their publication record features significant contributions to compute-in-memory technologies and AI edge devices.

Selected recent papers include:

  • A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices, 2020, Nature Electronics
  • A Local Computing Cell and 6T SRAM-Based Computing-in-Memory Macro With 8-b MAC Operation for Edge AI Chips, 2021, IEEE Journal of Solid-State Circuits
  • A 28nm 1Mb Time-Domain Computing-in-Memory 6T-SRAM Macro with a 6.6ns Latency, 1241GOPS and 37.01TOPS/W for 8b-MAC Operations for Edge-AI Devices, 2022, 2022 IEEE International Solid-State Circuits Conference (ISSCC)
  • An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices, 2022, 2022 IEEE International Solid-State Circuits Conference (ISSCC)
  • A four-megabit compute-in-memory macro with eight-bit precision based on CMOS and resistive random-access memory for AI edge devices, 2021, Nature Electronics

Their frequent coauthors include:

  • Kea-Tiong Tang
  • Meng-Fan Chang
  • Ren-Shuo Liu
  • Chung-Chuan Lo
  • Win-San Khwa

Hsieh's work is mainly published in the following venues:

  • IEEE Journal of Solid-State Circuits
  • 2022 IEEE International Solid-State Circuits Conference (ISSCC)
  • Nature Electronics
  • Science
  • Nature

Best Publications

  • A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors

    Wei-Hao Chen;Kai-Xiang Li;Wei-Yu Lin;Kuo-Hsiang Hsu

  • 24.1 A 1Mb Multibit ReRAM Computing-In-Memory Macro with 14.6ns Parallel MAC Computing Time for CNN Based AI Edge Processors

    Cheng-Xin Xue;Wei-Hao Chen;Je-Syu Liu;Jia-Fang Li

  • Focal-plane-arrays and CMOS readout techniques of infrared imaging systems

    Chih-Cheng Hsieh;Chung-Yu Wu;Far-Wen Jih;Tai-Ping Sun

  • 24.5 A Twin-8T SRAM Computation-In-Memory Macro for Multiple-Bit CNN-Based Machine Learning

    Xin Si;Jia-Jing Chen;Yung-Ning Tu;Wei-Hsing Huang

  • CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors

    Wei-Hao Chen;Chunmeng Dou;Kai-Xiang Li;Wei-Yu Lin

  • 15.4 A 22nm 2Mb ReRAM Compute-in-Memory Macro with 121-28TOPS/W for Multibit MAC Computing for Tiny AI Edge Devices

    Cheng-Xin Xue;Tsung-Yuan Huang;Je-Syu Liu;Ting-Wei Chang

  • 15.5 A 28nm 64Kb 6T SRAM Computing-in-Memory Macro with 8b MAC Operation for AI Edge Chips

    Xin Si;Yung-Ning Tu;Wei-Hsing Huanq;Jian-Wei Su

  • 16.3 A 28nm 384kb 6T-SRAM Computation-in-Memory Macro with 8b Precision for AI Edge Chips

    Jian-Wei Su;Yen-Chi Chou;Ruhui Liu;Ta-Wei Liu

  • A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices

    Cheng-Xin Xue;Je-Min Hung;Hui-Yao Kao;Yen-Hsiang Huang

  • 15.2 A 28nm 64Kb Inference-Training Two-Way Transpose Multibit 6T SRAM Compute-in-Memory Macro for AI Edge Chips

    Jian-Wei Su;Xin Si;Yen-Chi Chou;Ting-Wei Chang

  • A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices

    Cheng-Xin Xue;Yen-Cheng Chiu;Ta-Wei Liu;Tsung-Yuan Huang

  • A Local Computing Cell and 6T SRAM-Based Computing-in-Memory Macro With 8-b MAC Operation for Edge AI Chips

    Xin Si;Yung-Ning Tu;Wei-Hsing Huang;Jian-Wei Su

  • A 0.3 V 10-bit 1.17 f SAR ADC With Merge and Split Switching in 90 nm CMOS

    Jin-Yi Lin;Chih-Cheng Hsieh

  • A new cryogenic CMOS readout structure for infrared focal plane array

    Chih-Cheng Hsieh;Chung-Yu Wu;Tai-Ping Sun

  • A 2.4-to-5.2fJ/conversion-step 10b 0.5-to-4MS/s SAR ADC with charge-average switching DAC in 90nm CMOS

    Chang-Yuan Liou;Chih-Cheng Hsieh

  • Embedded 1-Mb ReRAM-Based Computing-in- Memory Macro With Multibit Input and Weight for CNN-Based AI Edge Processors

    Cheng-Xin Xue;Ting-Wei Chang;Tung-Cheng Chang;Hui-Yao Kao

  • High-performance CMOS buffered gate modulation input (BGMI) readout circuits for IR FPA

    Chih-Cheng Hsieh;Chung-Yu Wu;Tai-Ping Sun;Far-Wen Jih

  • A 2.02–5.16 fJ/Conversion Step 10 Bit Hybrid Coarse-Fine SAR ADC With Time-Domain Quantizer in 90 nm CMOS

    Yan-Jiun Chen;Kwuang-Han Chang;Chih-Cheng Hsieh

  • A 0.5-V Real-Time Computational CMOS Image Sensor With Programmable Kernel for Feature Extraction

    Tzu-Hsiang Hsu;Yi-Ren Chen;Ren-Shuo Liu;Chung-Chuan Lo

  • A Low-Power Electronic Nose Signal-Processing Chip for a Portable Artificial Olfaction System

    Kea-Tiong Tang;Shih-Wen Chiu;Meng-Fan Chang;Chih-Cheng Hsieh

Frequent Co-Authors

Kea-Tiong Tang
Kea-Tiong Tang National Tsing Hua University
Meng-Fan Chang
Meng-Fan Chang National Tsing Hua University
Chung-Yu Wu
Chung-Yu Wu National Yang Ming Chiao Tung University
Shih-Wei Lin
Shih-Wei Lin Chang Gung University
Shimeng Yu
Shimeng Yu Georgia Institute of Technology
Ya-Chin King
Ya-Chin King National Tsing Hua University
Muh-Hwa Yang
Muh-Hwa Yang Taipei Veterans General Hospital
Chih-I Wu
Chih-I Wu National Taiwan University
Chi-Ying F. Huang
Chi-Ying F. Huang National Yang Ming University
Yu-Te Wu
Yu-Te Wu National Yang Ming University

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