H-Index & Metrics Best Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 60 Citations 16,391 244 World Ranking 558 National Ranking 279

Overview

What is he best known for?

The fields of study he is best known for:

  • Artificial intelligence
  • Electrical engineering
  • Algorithm

The scientist’s investigation covers issues in Resistive random-access memory, Electronic engineering, Neuromorphic engineering, Optoelectronics and Nanotechnology. His study in Resistive random-access memory is interdisciplinary in nature, drawing from both Non-volatile memory, Phase-change memory, Voltage drop, Reset and MNIST database. His research investigates the connection between Electronic engineering and topics such as Hafnium compounds that intersect with problems in Solid state memory.

His Neuromorphic engineering study incorporates themes from Encoding and Learning rule. His Optoelectronics research incorporates elements of Electrical conductor, Pulse-amplitude modulation, Transient and Thin film. His Nanotechnology research is multidisciplinary, incorporating elements of Synaptic device, Electrical switching and Electronics.

His most cited work include:

  • Metal–Oxide RRAM (1562 citations)
  • Synaptic electronics: materials, devices and applications (641 citations)
  • Synaptic electronics: materials, devices and applications (641 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Resistive random-access memory, Electronic engineering, Neuromorphic engineering, Optoelectronics and Artificial neural network. Shimeng Yu interconnects Spice, Non-volatile memory and Resistive touchscreen in the investigation of issues within Resistive random-access memory. His work on CMOS as part of his general Electronic engineering study is frequently connected to Cross point, thereby bridging the divide between different branches of science.

His Neuromorphic engineering study combines topics from a wide range of disciplines, such as MNIST database, Deep learning and Computer architecture. He has included themes like Field-effect transistor, Thin film, Atomic layer deposition and Capacitor in his Optoelectronics study. While the research belongs to areas of Artificial neural network, Shimeng Yu spends his time largely on the problem of Static random-access memory, intersecting his research to questions surrounding Chip.

He most often published in these fields:

  • Resistive random-access memory (52.46%)
  • Electronic engineering (41.64%)
  • Neuromorphic engineering (22.30%)

What were the highlights of his more recent work (between 2019-2021)?

  • Resistive random-access memory (52.46%)
  • Ferroelectricity (7.54%)
  • Artificial neural network (18.36%)

In recent papers he was focusing on the following fields of study:

Shimeng Yu focuses on Resistive random-access memory, Ferroelectricity, Artificial neural network, Transistor and Static random-access memory. Resistive random-access memory is a subfield of Electrical engineering that Shimeng Yu tackles. The various areas that Shimeng Yu examines in his Artificial neural network study include XNOR gate, Edge device, Computer engineering, Applications of artificial intelligence and Resistive touchscreen.

His work deals with themes such as NAND gate, Non-volatile memory and Electronic engineering, Logic gate, which intersect with Transistor. His research links Sense amplifier with Electronic engineering. The study incorporates disciplines such as Efficient energy use and Chip in addition to Static random-access memory.

Between 2019 and 2021, his most popular works were:

  • Neuro-inspired computing chips (32 citations)
  • Power-efficient combinatorial optimization using intrinsic noise in memristor Hopfield neural networks (23 citations)
  • 15.2 A 28nm 64Kb Inference-Training Two-Way Transpose Multibit 6T SRAM Compute-in-Memory Macro for AI Edge Chips (16 citations)

In his most recent research, the most cited papers focused on:

  • Artificial intelligence
  • Electrical engineering
  • Integrated circuit

His scientific interests lie mostly in Resistive random-access memory, Static random-access memory, Transistor, Electronic engineering and Efficient energy use. The Resistive random-access memory study combines topics in areas such as CMOS and Inference. His studies in Static random-access memory integrate themes in fields like Enhanced Data Rates for GSM Evolution and Chip.

His Transistor study combines topics in areas such as Non-volatile memory, Logic gate and Ferroelectricity. His study looks at the relationship between Electronic engineering and topics such as Artificial neural network, which overlap with Memristor. His studies deal with areas such as Energy consumption and Computer architecture as well as Efficient energy use.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Metal–Oxide RRAM

H-S P. Wong;Heng-Yuan Lee;Shimeng Yu;Yu-Sheng Chen.
Proceedings of the IEEE (2012)

1868 Citations

Synaptic electronics: materials, devices and applications

Duygu Kuzum;Duygu Kuzum;Shimeng Yu;Shimeng Yu;H-S Philip Wong.
Nanotechnology (2013)

695 Citations

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

Shimeng Yu;Yi Wu;R. Jeyasingh;D. Kuzum.
IEEE Transactions on Electron Devices (2011)

566 Citations

A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu.
Advanced Materials (2013)

395 Citations

Neuro-Inspired Computing With Emerging Nonvolatile Memorys

Shimeng Yu.
Proceedings of the IEEE (2018)

387 Citations

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

Shimeng Yu;Ximeng Guan;H.-S. Philip Wong.
Applied Physics Letters (2011)

368 Citations

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

Shimeng Yu;Hong Yu Chen;Bin Gao;Jinfeng Kang.
ACS Nano (2013)

296 Citations

Emerging Memory Technologies: Recent Trends and Prospects

Shimeng Yu;Pai-Yu Chen.
IEEE Solid-State Circuits Magazine (2016)

293 Citations

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

Ximeng Guan;Shimeng Yu;H.-S Philip Wong.
IEEE Transactions on Electron Devices (2012)

289 Citations

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

Shimeng Yu;Yi Wu;H.-S. Philip Wong.
Applied Physics Letters (2011)

280 Citations

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Best Scientists Citing Shimeng Yu

Ming Liu

Ming Liu

Chinese Academy of Sciences

Publications: 98

Bin Gao

Bin Gao

Tsinghua University

Publications: 93

Huaqiang Wu

Huaqiang Wu

Tsinghua University

Publications: 86

Rainer Waser

Rainer Waser

RWTH Aachen University

Publications: 85

Shibing Long

Shibing Long

University of Science and Technology of China

Publications: 83

Hyunsang Hwang

Hyunsang Hwang

Pohang University of Science and Technology

Publications: 75

Hangbing Lv

Hangbing Lv

Chinese Academy of Sciences

Publications: 74

Daniele Ielmini

Daniele Ielmini

Politecnico di Milano

Publications: 74

Jinfeng Kang

Jinfeng Kang

Peking University

Publications: 72

J. Joshua Yang

J. Joshua Yang

University of Southern California

Publications: 69

Ting-Chang Chang

Ting-Chang Chang

National Sun Yat-sen University

Publications: 66

Byung-Gook Park

Byung-Gook Park

Seoul National University

Publications: 65

H.-S. Philip Wong

H.-S. Philip Wong

Stanford University

Publications: 64

He Qian

He Qian

Tsinghua University

Publications: 60

Stephan Menzel

Stephan Menzel

Forschungszentrum Jülich

Publications: 57

Yiran Chen

Yiran Chen

Duke University

Publications: 44

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