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Electronics and Electrical Engineering
USA
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
103
Citations
51224
World Ranking
155
National Ranking
76

Materials Science

D-Index
97
Citations
45575
World Ranking
1185
National Ranking
385

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in United States Leader Award

Overview

H.-S. Philip Wong is affiliated with Stanford University in the United States. Their research spans multiple areas within engineering and materials science, with a strong emphasis on electrical and electronic engineering and materials chemistry.

Their main fields of study are:

  • Engineering
  • Materials Science

Their work is further specialized in subfields including:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Polymers and Plastics
  • Biomedical Engineering
  • Atomic and Molecular Physics, and Optics

Research topics that frequently appear in their publications include:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Phase-change materials and chalcogenides
  • Advancements in Semiconductor Devices and Circuit Design
  • 2D Materials and Applications
  • Graphene research and applications

Frequent publication venues for their work include:

  • IEEE Transactions on Electron Devices
  • arXiv (Cornell University)
  • IEEE Electron Device Letters
  • 2022 International Electron Devices Meeting (IEDM)
  • 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

H.-S. Philip Wong has collaborated regularly with several researchers such as Eric Pop, Iuliana Radu, Subhasish Mitra, Asir Intisar Khan, and Sheng-Kai Su.

Notable recent papers include:

  • A compute-in-memory chip based on resistive random-access memory, 2022, Nature
  • Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111), 2020, Nature
  • Ultralow-switching current density multilevel phase-change memory on a flexible substrate, 2021, Science
  • Layered Semiconducting 2D Materials for Future Transistor Applications, 2021, Small Structures
  • Carbon nanotube transistors: Making electronics from molecules, 2022, Science

Best Publications

  • Metal–Oxide RRAM

    H-S P. Wong;Heng-Yuan Lee;Shimeng Yu;Yu-Sheng Chen

  • In-memory computing with resistive switching devices

    Daniele Ielmini;H.-S. Philip Wong

  • Graphene and two-dimensional materials for silicon technology.

    Deji Akinwande;Cedric Huyghebaert;Ching-Hua Wang;Martha I. Serna

  • MoS2 transistors with 1-nanometer gate lengths

    Sujay B. Desai;Sujay B. Desai;Surabhi R. Madhvapathy;Surabhi R. Madhvapathy;Angada B. Sachid;Angada B. Sachid;Juan Pablo Llinas;Juan Pablo Llinas

  • Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing.

    Duygu Kuzum;Rakesh G. D. Jeyasingh;Byoungil Lee;H.-S. Philip Wong

  • CMOS scaling into the nanometer regime

    Yuan Taur;D.A. Buchanan;Wei Chen;D.J. Frank

  • Optoelectronic resistive random access memory for neuromorphic vision sensors.

    Feichi Zhou;Zheng Zhou;Jiewei Chen;Tsz Hin Choy

  • Carbon nanotube computer

    Max M. Shulaker;Gage Hills;Nishant Patil;Hai Wei

  • The End of Moore's Law: A New Beginning for Information Technology

    Thomas N. Theis;H.-S. Philip Wong

  • A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part I: Model of the Intrinsic Channel Region

    Unknown

  • Memory leads the way to better computing

    H.-S. Philip Wong;Sayeef Salahuddin

  • A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part II: Full Device Model and Circuit Performance Benchmarking

    Unknown

  • Face classification using electronic synapses

    Peng Yao;Huaqiang Wu;Bin Gao;Sukru Burc Eryilmaz

  • An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

    Shimeng Yu;Yi Wu;R. Jeyasingh;D. Kuzum

  • Three-dimensional integration of nanotechnologies for computing and data storage on a single chip

    Max M. Shulaker;Max M. Shulaker;Gage Hills;Rebecca S. Park;Roger T. Howe

  • Beyond the conventional transistor

    Unknown

  • Artificial optic-neural synapse for colored and color-mixed pattern recognition

    Seunghwan Seo;Seo Hyeon Jo;Sungho Kim;Jaewoo Shim

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

    Tse An Chen;Chih Piao Chuu;Chien Chih Tseng;Chao Kai Wen

  • Electronic synapses made of layered two-dimensional materials

    Yuanyuan Shi;Yuanyuan Shi;Xianhu Liang;Bin Yuan;Victoria Chen

  • Continuous wireless pressure monitoring and mapping with ultra-small passive sensors for health monitoring and critical care

    Lisa Y. Chen;Benjamin C. K. Tee;Alex L. Chortos;Gregor Schwartz

  • A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

    Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu

  • Carbon Nanotube and Graphene Device Physics

    H. S. Philip Wong;Deji Akinwande

Frequent Co-Authors

Shimeng Yu
Shimeng Yu Georgia Institute of Technology
Eric Pop
Eric Pop Stanford University
Jinfeng Kang
Jinfeng Kang Peking University
Bin Gao
Bin Gao Xi'an Jiaotong University
Kenneth E. Goodson
Kenneth E. Goodson Stanford University
Mehdi Asheghi
Mehdi Asheghi Stanford University
Yoshio Nishi
Yoshio Nishi Stanford University
Krishna C. Saraswat
Krishna C. Saraswat Stanford University
S. Simon Wong
S. Simon Wong Stanford University
Deji Akinwande
Deji Akinwande The University of Texas at Austin

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