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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
47
Citations
9045
World Ranking
3215
National Ranking
97

Overview

Stephan Menzel is affiliated with Forschungszentrum Jülich in Germany and has contributed extensively to the fields of engineering and neuroscience. Their research primarily focuses on topics such as advanced memory and neural computing, ferroelectric and negative capacitance devices, neuroscience and neural engineering, semiconductor materials and devices, neural dynamics and brain function, transition metal oxide nanomaterials, and photoreceptor and optogenetics research.

The scientist has published numerous papers in various renowned venues. Frequent publication venues for their work include Advanced Electronic Materials, arXiv (Cornell University), IEEE Transactions on Electron Devices, Neuromorphic Computing and Engineering, and Advanced Intelligent Systems.

Co-authorship has been significant in their career, with frequent collaborations including Rainer Waser, Stefan Wiefels, Christopher Bengel, Dirk J. Wouters, and Vikas Rana.

Several recent papers illustrate Stephan Menzel's research themes and interdisciplinary approach:

  • "Embedded Devices for Neuromorphic Time-Series Assessment," 2022, Maryland Shared Open Access Repository (USMAI Consortium)
  • "Standards for the Characterization of Endurance in Resistive Switching Devices," 2021, ACS Nano
  • "Nanoionic memristive phenomena in metal oxides: the valence change mechanism," 2021, Advances In Physics
  • "Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models," 2020, IEEE Transactions on Circuits and Systems I Regular Papers
  • "Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag-Based Diffusive Memristors," 2021, Advanced Functional Materials

Menzel's main fields of study encompass a broad range of topics within engineering, particularly electrical and electronic engineering, while maintaining a strong focus on cellular and molecular neuroscience as well as cognitive neuroscience and materials chemistry as subfields.

The body of work reflects a focus on the integration of advanced materials and device physics with neural engineering applications. Research contributions frequently address memristive devices, neuromorphic computing components, and detailed modeling of oxide-based switching phenomena. These topics align with wider trends in developing bio-inspired computing systems and enhancing understanding of neural dynamics through engineered materials and devices.

Best Publications

  • Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches

    Stephan Menzel;Matthias Waters;Astrid Marchewka;Ulrich Böttger

  • Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems

    Xin Guo;Christina Schindler;Stephan Menzel;Rainer Waser

  • Towards Oxide Electronics: a Roadmap

    M. Coll;J. Fontcuberta;M. Althammer;M. Bibes

  • Physics of the Switching Kinetics in Resistive Memories

    Stephan Menzel;Ulrich Böttger;Martin Wimmer;Martin Salinga

  • Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

    S. Starschich;S. Menzel;U. Böttger

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • Switching kinetics of electrochemical metallization memory cells

    Stephan Menzel;Stefan Tappertzhofen;Rainer Waser;Rainer Waser;Ilia Valov

  • Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process

    Astrid Marchewka;Bernd Roesgen;Katharina Skaja;Hongchu Du;Hongchu Du

  • Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM

    David Cooper;Christoph Baeumer;Nicolas Bernier;Astrid Marchewka

  • Nanoionic memristive phenomena in metal oxides: the valence change mechanism

    Unknown

  • Simulation of multilevel switching in electrochemical metallization memory cells

    Stephan Menzel;Ulrich Böttger;Rainer Waser

  • Realization of Boolean Logic Functionality Using Redox‐Based Memristive Devices

    Anne Siemon;Thomas Breuer;Nabeel Aslam;Sebastian Ferch

  • Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices

    Eike Linn;Anne Siemon;Rainer Waser;Stephan Menzel

  • A Complementary Resistive Switch-Based Crossbar Array Adder

    Anne Siemon;Stephan Menzel;Rainer Waser;Eike Linn

  • Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors

    Unknown

  • Exploiting the switching dynamics of HfO 2 -based ReRAM devices for reliable analog memristive behavior

    F. Cüppers;S. Menzel;C. Bengel;A. Hardtdegen

  • Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices

    Wonjoo Kim;Stephan Menzel;Dirk J. Wouters;Yuzheng Guo

  • Improved Switching Stability and the Effect of an Internal Series Resistor in HfO 2 /TiO x Bilayer ReRAM Cells

    Alexander Hardtdegen;Camilla La Torre;Felix Cuppers;Stephan Menzel

  • Multidimensional Simulation of Threshold Switching in NbO2 Based on an Electric Field Triggered Thermal Runaway Model

    Carsten Funck;Stephan Menzel;Nabeel Aslam;Hehe Zhang

  • Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models

    Christopher Bengel;Anne Siemon;Felix Cuppers;Susanne Hoffmann-Eifert

  • Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices

    Christoph Baeumer;Richard Valenta;Christoph Schmitz;Andrea Locatelli

  • Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

    Christoph Baeumer;Christoph Schmitz;Astrid Marchewka;David N. Mueller

  • Spectroscopic Proof of the Correlation between Redox‐State and Charge‐Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices

    Anja Herpers;Christian Lenser;Chanwoo Park;Francesco Offi

Frequent Co-Authors

Rainer Waser
Rainer Waser RWTH Aachen University
Ulrich Böttger
Ulrich Böttger RWTH Aachen University
Regina Dittmann
Regina Dittmann Forschungszentrum Jülich
Ilia Valov
Ilia Valov RWTH Aachen University
Joachim Mayer
Joachim Mayer RWTH Aachen University
Claus M. Schneider
Claus M. Schneider Forschungszentrum Jülich
Matthias Wuttig
Matthias Wuttig RWTH Aachen University
Daniele Ielmini
Daniele Ielmini Polytechnic University of Milan
Chun-Lin Jia
Chun-Lin Jia Xi'an Jiaotong University
Cheol Seong Hwang
Cheol Seong Hwang Seoul National University

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