2021 - IEEE Fellow For contributions to wafer-scale graphene synthesis and application to flexible devices
2017 - Fellow of American Physical Society (APS) Citation For contributions to the physical study and development of scalable uniform monolayer graphene synthesis on waferscale substrates, and the realization of GHz flexible and wearable twodimensional devices, circuits and systems
His primary areas of study are Nanotechnology, Graphene, Optoelectronics, Transistor and Graphene oxide paper. His work carried out in the field of Nanotechnology brings together such families of science as Phonon, van der Waals force and Silicon. Graphene is closely attributed to Field-effect transistor in his research.
His study of Phosphorene is a part of Optoelectronics. His Transistor research incorporates elements of Flexible electronics, Cutoff frequency, Conductance and Electric potential. His research in Graphene oxide paper focuses on subjects like Chemical vapor deposition, which are connected to Wafer, Amorphous solid, Etching and Thin film.
His primary scientific interests are in Optoelectronics, Graphene, Nanotechnology, Transistor and Field-effect transistor. His research on Optoelectronics also deals with topics like
His studies link Silicon with Nanotechnology. The Transistor study combines topics in areas such as Flexible electronics, Electronic circuit, Amplifier and Semiconductor. His Graphene nanoribbons research includes elements of Bilayer graphene and Electron mobility.
Deji Akinwande focuses on Optoelectronics, Graphene, Monolayer, Memristor and Heterojunction. The concepts of his Optoelectronics study are interwoven with issues in Transistor, Active layer, Transition metal and Electrode. Graphene is a subfield of Nanotechnology that Deji Akinwande studies.
His Monolayer study combines topics from a wide range of disciplines, such as Chemical vapor deposition, Spectroscopy, Nanomaterials, Vacancy defect and Insulator. His Memristor study also includes fields such as
Deji Akinwande mainly investigates Optoelectronics, Semiconductor, Graphene, Resistive switching and Neuromorphic engineering. His research integrates issues of Memristor, Electrode and Robustness in his study of Optoelectronics. In his research, Amorphous solid, Bridge, Engineering physics and Microprocessor is intimately related to Silicon, which falls under the overarching field of Semiconductor.
Deji Akinwande integrates many fields, such as Graphene and Synergistic combination, in his works. The various areas that he examines in his Resistive switching study include Electronic engineering, Metal, Microelectronics and Diffusion. His Hexagonal boron nitride study results in a more complete grasp of Nanotechnology.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Recent Advances in Two-Dimensional Materials beyond Graphene
Ganesh R. Bhimanapati;Zhenqiu Lin;Vincent Meunier;Vincent Meunier;Yeonwoong Jung.
ACS Nano (2015)
Silicene field-effect transistors operating at room temperature
Li Tao;Eugenio Cinquanta;Daniele Chiappe;Carlo Grazianetti.
Nature Nanotechnology (2015)
Two-dimensional flexible nanoelectronics.
Deji Akinwande;Nicholas Petrone;James Hone.
Nature Communications (2014)
Recent development of two-dimensional transition metal dichalcogenides and their applications
Wonbong Choi;Nitin Choudhary;Gang Hee Han;Juhong Park.
Materials Today (2017)
A review on mechanics and mechanical properties of 2D materials—Graphene and beyond
Deji Akinwande;Christopher J. Brennan;J. Scott Bunch;Philip Egberts.
Extreme Mechanics Letters (2017)
Graphene and two-dimensional materials for silicon technology.
Deji Akinwande;Cedric Huyghebaert;Ching-Hua Wang;Martha I. Serna.
Nature (2019)
High-performance, highly bendable MoS2 transistors with high-K dielectrics for flexible low-power systems
Hsiao Yu Chang;Shixuan Yang;Jongho Lee;Li Tao.
ACS Nano (2013)
Carbon Nanotube and Graphene Device Physics
H. S. Philip Wong;Deji Akinwande.
(2011)
Buckled two-dimensional Xene sheets
Alessandro Molle;Joshua Goldberger;Michel Houssa;Yong Xu.
Nature Materials (2017)
Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide
Avinash P. Nayak;Swastibrata Bhattacharyya;Jie Zhu;Jin Liu.
Nature Communications (2014)
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