World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
66
Citations
17808
World Ranking
1138
National Ranking
30

Materials Science

D-Index
67
Citations
18010
World Ranking
5059
National Ranking
294

Max C. Lemme publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Max C. Lemme sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 354 publications — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Max C. Lemme D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Max C. Lemme sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 66 D-Index — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Max C. Lemme is affiliated with RWTH Aachen University in Germany. Their research spans multiple areas within engineering and materials science, with a focus on the study and application of two-dimensional materials and nanotechnology.

The scientist's recent publications include:

  • 2D materials for future heterogeneous electronics, 2022, Nature Communications
  • Insulators for 2D nanoelectronics: the gap to bridge, 2020, Nature Communications
  • Large-area integration of two-dimensional materials and their heterostructures by wafer bonding, 2021, Nature Communications
  • How to report and benchmark emerging field-effect transistors, 2022, Nature Electronics
  • Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning, 2022, Nature Electronics

Frequent co-authors collaborating with Max C. Lemme include:

  • Zhenxing Wang
  • Daniel Neumaier
  • Stephan Suckow
  • M. Heuken
  • Satender Kataria

The scientist has contributed extensively to several publication venues, notably:

  • arXiv (Cornell University) with 40 publications
  • Nature Communications with 6 publications
  • ACS Applied Materials & Interfaces with 5 publications
  • ACS Photonics with 4 publications
  • ACS Nano with 4 publications

Main fields of study encompass Engineering and Materials Science, with 216 and 152 publications respectively.

Within these broader fields, subfields include:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Biomedical Engineering
  • Atomic and Molecular Physics, and Optics
  • Polymers and Plastics

The primary research topics addressed are:

  • Graphene research and applications
  • 2D Materials and Applications
  • Advanced Memory and Neural Computing
  • Photonic and Optical Devices
  • Semiconductor materials and devices
  • Nanowire Synthesis and Applications
  • Plasmonic and Surface Plasmon Research

Best Publications

  • A Graphene Field-Effect Device

    M.C. Lemme;T.J. Echtermeyer;M. Baus;H. Kurz

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • 2D materials for future heterogeneous electronics

    Unknown

  • Efficient Inkjet Printing of Graphene

    Jiantong Li;Fei Ye;Sam Vaziri;Mamoun Muhammed

  • Gate-activated photoresponse in a graphene p-n junction.

    Max C. Lemme;Frank H. L. Koppens;Abram L. Falk;Mark S. Rudner

  • Insulators for 2D nanoelectronics: the gap to bridge.

    Yury Yu. Illarionov;Theresia Knobloch;Markus Jech;Mario Lanza

  • Precision cutting and patterning of graphene with helium ions

    David C. Bell;Max Lemme;L. A. Stern;J. R. Williams

  • Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2

    V Geringer;M Liebmann;T Echtermeyer;S Runte

  • Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

    Anderson Smith;Frank Niklaus;A. Paussa;Sam Vaziri

  • Etching of graphene devices with a helium ion beam.

    Max C. Lemme;David C. Bell;James R. Williams;Lewis A. Stern

  • High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature.

    Chanyoung Yim;Kangho Lee;Niall McEvoy;Maria O’Brien

  • Resistive graphene humidity sensors with rapid and direct electrical readout

    Anderson David Smith;Karim Elgammal;Frank Niklaus;Anna Delin;Anna Delin

  • Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

    Grzegorz Lupina;Julia Kitzmann;Ioan Costina;Mindaugas Lukosius

  • A Graphene-Based Hot Electron Transistor

    Sam Vaziri;Grzegorz Lupina;Christoph Henkel;Anderson D. Smith

  • Nanoelectromechanical sensors based on suspended 2D materials

    Max C. Lemme;Stefan Wagner;Kangho Lee;Xuge Fan

  • Inkjet Printing of MoS2

    Jiantong Li;Maziar M. Naiini;Sam Vaziri;Max C. Lemme;Max C. Lemme

  • Room-Temperature Stimulated Emission and Lasing in Recrystallized Cesium Lead Bromide Perovskite Thin Films.

    Neda Pourdavoud;Tobias Haeger;Andre Mayer;Piotr Jacek Cegielski

  • Nonvolatile Switching in Graphene Field-Effect Devices

    T.J. Echtermeyer;M.C. Lemme;M. Baus;B.N. Szafranek

  • How to report and benchmark emerging field-effect transistors

    Unknown

  • Non-volatile switching in graphene field effect devices

    T. J. Echtermeyer;M. C. Lemme;M. Baus;B. N. Szafranek

  • Vertical Graphene Base Transistor

    Wolfgang Mehr;J. Christoph Scheytt;Jarek Dabrowski;Gunther Lippert

  • Vertical Graphene Base Transistor

    W. Mehr;J. Dabrowski;J. C. Scheytt;G. Lippert

  • Graphene-enabled wireless communication for massive multicore architectures

    Sergi Abadal;Eduard Alarcón;Albert Cabellos-Aparicio;Max Lemme

Frequent Co-Authors

Mikael Östling
Mikael Östling Royal Institute of Technology
Stefan Wagner
Stefan Wagner University of Stuttgart
Frank Niklaus
Frank Niklaus Royal Institute of Technology
Eduard Alarcon
Eduard Alarcon Universitat Politècnica de Catalunya
Heinrich Kurz
Heinrich Kurz RWTH Aachen University
Georg S. Duesberg
Georg S. Duesberg Bundeswehr University Munich
Paul K. Hurley
Paul K. Hurley Tyndall National Institute
Niall McEvoy
Niall McEvoy Trinity College Dublin
Albert Cabellos-Aparicio
Albert Cabellos-Aparicio Universitat Politècnica de Catalunya

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