D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 59 Citations 13,256 249 World Ranking 3561 National Ranking 231
Electronics and Electrical Engineering D-index 56 Citations 12,132 306 World Ranking 1260 National Ranking 40

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Electrical engineering

Max C. Lemme mainly focuses on Graphene, Nanotechnology, Optoelectronics, Silicon and Inkjet printing. His study in Graphene is interdisciplinary in nature, drawing from both Wafer, Monolayer, Transistor, Substrate and Quantum tunnelling. His studies in Nanotechnology integrate themes in fields like Piezoresistive effect and Strain gauge.

His Optoelectronics research integrates issues from Field-effect transistor and MOSFET. His biological study spans a wide range of topics, including Chemical vapor deposition and Photodiode. The concepts of his Inkjet printing study are interwoven with issues in Photodetector, Printed electronics and Molybdenum disulfide.

His most cited work include:

  • A Graphene Field-Effect Device (874 citations)
  • Gate-activated photoresponse in a graphene p-n junction. (330 citations)
  • Efficient Inkjet Printing of Graphene (303 citations)

What are the main themes of his work throughout his whole career to date?

Max C. Lemme mainly investigates Optoelectronics, Graphene, Nanotechnology, Silicon and Transistor. His Optoelectronics study combines topics in areas such as Field-effect transistor and MOSFET. In his study, Gate oxide is inextricably linked to Silicon on insulator, which falls within the broad field of MOSFET.

His study in the field of Graphene nanoribbons also crosses realms of Nanoelectromechanical systems. The study incorporates disciplines such as Band gap, Logic gate and Dielectric in addition to Nanotechnology. His study looks at the relationship between Silicon and fields such as Schottky barrier, as well as how they intersect with chemical problems.

He most often published in these fields:

  • Optoelectronics (69.63%)
  • Graphene (67.34%)
  • Nanotechnology (39.83%)

What were the highlights of his more recent work (between 2018-2021)?

  • Optoelectronics (69.63%)
  • Graphene (67.34%)
  • Silicon (26.07%)

In recent papers he was focusing on the following fields of study:

Max C. Lemme focuses on Optoelectronics, Graphene, Silicon, Heterojunction and Nanotechnology. His Optoelectronics study combines topics from a wide range of disciplines, such as Nanocrystalline material and Molybdenum disulfide. Max C. Lemme carries out multidisciplinary research, doing studies in Graphene and Nanoelectromechanical systems.

Max C. Lemme combines subjects such as Adhesive, Substrate and Dielectric with his study of Silicon. His Heterojunction research incorporates elements of Photodiode and Band gap. His work on Flexible electronics and Nanomaterials as part of general Nanotechnology study is frequently linked to Gas pressure, bridging the gap between disciplines.

Between 2018 and 2021, his most popular works were:

  • Recommended Methods to Study Resistive Switching Devices (160 citations)
  • Room-Temperature Stimulated Emission and Lasing in Recrystallized Cesium Lead Bromide Perovskite Thin Films. (50 citations)
  • Integrating graphene into semiconductor fabrication lines. (49 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Transistor

His primary areas of study are Graphene, Optoelectronics, Silicon, Nanotechnology and Nanoelectromechanical systems. Max C. Lemme has included themes like Characterization, Semiconductor device fabrication, Metal and Electronics in his Graphene study. His work on Photodetector, Photonics and Figure of merit as part of general Optoelectronics study is frequently linked to Hall effect sensor, therefore connecting diverse disciplines of science.

As part of one scientific family, Max C. Lemme deals mainly with the area of Silicon, narrowing it down to issues related to the Photodiode, and often Chemical vapor deposition, Amorphous silicon, Molybdenum disulfide and Quantum efficiency. Much of his study explores Nanotechnology relationship to Material properties. The Microelectromechanical systems study which covers Ribbon that intersects with Piezoresistive effect.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

A Graphene Field-Effect Device

M.C. Lemme;T.J. Echtermeyer;M. Baus;H. Kurz.
IEEE Electron Device Letters (2007)

1303 Citations

A Graphene Field-Effect Device

M.C. Lemme;T.J. Echtermeyer;M. Baus;H. Kurz.
IEEE Electron Device Letters (2007)

1303 Citations

Efficient Inkjet Printing of Graphene

Jiantong Li;Fei Ye;Sam Vaziri;Mamoun Muhammed.
Advanced Materials (2013)

466 Citations

Efficient Inkjet Printing of Graphene

Jiantong Li;Fei Ye;Sam Vaziri;Mamoun Muhammed.
Advanced Materials (2013)

466 Citations

Gate-activated photoresponse in a graphene p-n junction.

Max C. Lemme;Frank H. L. Koppens;Abram L. Falk;Mark S. Rudner.
Nano Letters (2011)

446 Citations

Gate-activated photoresponse in a graphene p-n junction.

Max C. Lemme;Frank H. L. Koppens;Abram L. Falk;Mark S. Rudner.
Nano Letters (2011)

446 Citations

Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2

V Geringer;M Liebmann;T Echtermeyer;S Runte.
Physical Review Letters (2009)

438 Citations

Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2

V Geringer;M Liebmann;T Echtermeyer;S Runte.
Physical Review Letters (2009)

438 Citations

Precision cutting and patterning of graphene with helium ions

David C. Bell;Max Lemme;L. A. Stern;J. R. Williams.
Nanotechnology (2009)

424 Citations

Precision cutting and patterning of graphene with helium ions

David C. Bell;Max Lemme;L. A. Stern;J. R. Williams.
Nanotechnology (2009)

424 Citations

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