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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
66
Citations
17808
World Ranking
1138
National Ranking
31

Materials Science

D-Index
67
Citations
18010
World Ranking
5061
National Ranking
295

Overview

Max C. Lemme is affiliated with RWTH Aachen University in Germany. Their research spans multiple areas within engineering and materials science, with a focus on the study and application of two-dimensional materials and nanotechnology.

The scientist's recent publications include:

  • 2D materials for future heterogeneous electronics, 2022, Nature Communications
  • Insulators for 2D nanoelectronics: the gap to bridge, 2020, Nature Communications
  • Large-area integration of two-dimensional materials and their heterostructures by wafer bonding, 2021, Nature Communications
  • How to report and benchmark emerging field-effect transistors, 2022, Nature Electronics
  • Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning, 2022, Nature Electronics

Frequent co-authors collaborating with Max C. Lemme include:

  • Zhenxing Wang
  • Daniel Neumaier
  • Stephan Suckow
  • M. Heuken
  • Satender Kataria

The scientist has contributed extensively to several publication venues, notably:

  • arXiv (Cornell University) with 40 publications
  • Nature Communications with 6 publications
  • ACS Applied Materials & Interfaces with 5 publications
  • ACS Photonics with 4 publications
  • ACS Nano with 4 publications

Main fields of study encompass Engineering and Materials Science, with 216 and 152 publications respectively.

Within these broader fields, subfields include:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Biomedical Engineering
  • Atomic and Molecular Physics, and Optics
  • Polymers and Plastics

The primary research topics addressed are:

  • Graphene research and applications
  • 2D Materials and Applications
  • Advanced Memory and Neural Computing
  • Photonic and Optical Devices
  • Semiconductor materials and devices
  • Nanowire Synthesis and Applications
  • Plasmonic and Surface Plasmon Research

Best Publications

  • A Graphene Field-Effect Device

    M.C. Lemme;T.J. Echtermeyer;M. Baus;H. Kurz

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • 2D materials for future heterogeneous electronics

    Unknown

  • Efficient Inkjet Printing of Graphene

    Jiantong Li;Fei Ye;Sam Vaziri;Mamoun Muhammed

  • Gate-activated photoresponse in a graphene p-n junction.

    Max C. Lemme;Frank H. L. Koppens;Abram L. Falk;Mark S. Rudner

  • Insulators for 2D nanoelectronics: the gap to bridge.

    Yury Yu. Illarionov;Theresia Knobloch;Markus Jech;Mario Lanza

  • Precision cutting and patterning of graphene with helium ions

    David C. Bell;Max Lemme;L. A. Stern;J. R. Williams

  • Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2

    V Geringer;M Liebmann;T Echtermeyer;S Runte

  • Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

    Anderson Smith;Frank Niklaus;A. Paussa;Sam Vaziri

  • Etching of graphene devices with a helium ion beam.

    Max C. Lemme;David C. Bell;James R. Williams;Lewis A. Stern

  • High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature.

    Chanyoung Yim;Kangho Lee;Niall McEvoy;Maria O’Brien

  • Resistive graphene humidity sensors with rapid and direct electrical readout

    Anderson David Smith;Karim Elgammal;Frank Niklaus;Anna Delin;Anna Delin

  • Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

    Grzegorz Lupina;Julia Kitzmann;Ioan Costina;Mindaugas Lukosius

  • A Graphene-Based Hot Electron Transistor

    Sam Vaziri;Grzegorz Lupina;Christoph Henkel;Anderson D. Smith

  • Nanoelectromechanical sensors based on suspended 2D materials

    Max C. Lemme;Stefan Wagner;Kangho Lee;Xuge Fan

  • Inkjet Printing of MoS2

    Jiantong Li;Maziar M. Naiini;Sam Vaziri;Max C. Lemme;Max C. Lemme

  • Room-Temperature Stimulated Emission and Lasing in Recrystallized Cesium Lead Bromide Perovskite Thin Films.

    Neda Pourdavoud;Tobias Haeger;Andre Mayer;Piotr Jacek Cegielski

  • Nonvolatile Switching in Graphene Field-Effect Devices

    T.J. Echtermeyer;M.C. Lemme;M. Baus;B.N. Szafranek

  • How to report and benchmark emerging field-effect transistors

    Unknown

  • Non-volatile switching in graphene field effect devices

    T. J. Echtermeyer;M. C. Lemme;M. Baus;B. N. Szafranek

  • Vertical Graphene Base Transistor

    Wolfgang Mehr;J. Christoph Scheytt;Jarek Dabrowski;Gunther Lippert

  • Vertical Graphene Base Transistor

    W. Mehr;J. Dabrowski;J. C. Scheytt;G. Lippert

  • Graphene-enabled wireless communication for massive multicore architectures

    Sergi Abadal;Eduard Alarcón;Albert Cabellos-Aparicio;Max Lemme

Frequent Co-Authors

Mikael Östling
Mikael Östling Royal Institute of Technology
Stefan Wagner
Stefan Wagner University of Stuttgart
Frank Niklaus
Frank Niklaus Royal Institute of Technology
Eduard Alarcon
Eduard Alarcon Universitat Politècnica de Catalunya
Heinrich Kurz
Heinrich Kurz RWTH Aachen University
Georg S. Duesberg
Georg S. Duesberg Bundeswehr University Munich
Paul K. Hurley
Paul K. Hurley Tyndall National Institute
Niall McEvoy
Niall McEvoy Trinity College Dublin
Albert Cabellos-Aparicio
Albert Cabellos-Aparicio Universitat Politècnica de Catalunya

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