Max C. Lemme mainly focuses on Graphene, Nanotechnology, Optoelectronics, Silicon and Inkjet printing. His study in Graphene is interdisciplinary in nature, drawing from both Wafer, Monolayer, Transistor, Substrate and Quantum tunnelling. His studies in Nanotechnology integrate themes in fields like Piezoresistive effect and Strain gauge.
His Optoelectronics research integrates issues from Field-effect transistor and MOSFET. His biological study spans a wide range of topics, including Chemical vapor deposition and Photodiode. The concepts of his Inkjet printing study are interwoven with issues in Photodetector, Printed electronics and Molybdenum disulfide.
Max C. Lemme mainly investigates Optoelectronics, Graphene, Nanotechnology, Silicon and Transistor. His Optoelectronics study combines topics in areas such as Field-effect transistor and MOSFET. In his study, Gate oxide is inextricably linked to Silicon on insulator, which falls within the broad field of MOSFET.
His study in the field of Graphene nanoribbons also crosses realms of Nanoelectromechanical systems. The study incorporates disciplines such as Band gap, Logic gate and Dielectric in addition to Nanotechnology. His study looks at the relationship between Silicon and fields such as Schottky barrier, as well as how they intersect with chemical problems.
Max C. Lemme focuses on Optoelectronics, Graphene, Silicon, Heterojunction and Nanotechnology. His Optoelectronics study combines topics from a wide range of disciplines, such as Nanocrystalline material and Molybdenum disulfide. Max C. Lemme carries out multidisciplinary research, doing studies in Graphene and Nanoelectromechanical systems.
Max C. Lemme combines subjects such as Adhesive, Substrate and Dielectric with his study of Silicon. His Heterojunction research incorporates elements of Photodiode and Band gap. His work on Flexible electronics and Nanomaterials as part of general Nanotechnology study is frequently linked to Gas pressure, bridging the gap between disciplines.
His primary areas of study are Graphene, Optoelectronics, Silicon, Nanotechnology and Nanoelectromechanical systems. Max C. Lemme has included themes like Characterization, Semiconductor device fabrication, Metal and Electronics in his Graphene study. His work on Photodetector, Photonics and Figure of merit as part of general Optoelectronics study is frequently linked to Hall effect sensor, therefore connecting diverse disciplines of science.
As part of one scientific family, Max C. Lemme deals mainly with the area of Silicon, narrowing it down to issues related to the Photodiode, and often Chemical vapor deposition, Amorphous silicon, Molybdenum disulfide and Quantum efficiency. Much of his study explores Nanotechnology relationship to Material properties. The Microelectromechanical systems study which covers Ribbon that intersects with Piezoresistive effect.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
A Graphene Field-Effect Device
M.C. Lemme;T.J. Echtermeyer;M. Baus;H. Kurz.
IEEE Electron Device Letters (2007)
A Graphene Field-Effect Device
M.C. Lemme;T.J. Echtermeyer;M. Baus;H. Kurz.
IEEE Electron Device Letters (2007)
Efficient Inkjet Printing of Graphene
Jiantong Li;Fei Ye;Sam Vaziri;Mamoun Muhammed.
Advanced Materials (2013)
Efficient Inkjet Printing of Graphene
Jiantong Li;Fei Ye;Sam Vaziri;Mamoun Muhammed.
Advanced Materials (2013)
Gate-activated photoresponse in a graphene p-n junction.
Max C. Lemme;Frank H. L. Koppens;Abram L. Falk;Mark S. Rudner.
Nano Letters (2011)
Gate-activated photoresponse in a graphene p-n junction.
Max C. Lemme;Frank H. L. Koppens;Abram L. Falk;Mark S. Rudner.
Nano Letters (2011)
Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2
V Geringer;M Liebmann;T Echtermeyer;S Runte.
Physical Review Letters (2009)
Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO 2
V Geringer;M Liebmann;T Echtermeyer;S Runte.
Physical Review Letters (2009)
Precision cutting and patterning of graphene with helium ions
David C. Bell;Max Lemme;L. A. Stern;J. R. Williams.
Nanotechnology (2009)
Precision cutting and patterning of graphene with helium ions
David C. Bell;Max Lemme;L. A. Stern;J. R. Williams.
Nanotechnology (2009)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:
Royal Institute of Technology
University of Stuttgart
Universitat Politècnica de Catalunya
RWTH Aachen University
Bundeswehr University Munich
Trinity College Dublin
TU Wien
University of Pisa
University of Copenhagen
University of Pisa
University of Mannheim
National University of Singapore
Nuance Communications (United States)
Tohoku University
University of Utah
University of Idaho
University of Southern Denmark
University of Queensland
University of Bristol
Aarhus University
University of Eastern Finland
University of Illinois at Urbana-Champaign
University of Alabama at Birmingham
Instituto de Salud Carlos III
St. Michael's GAA, Sligo
University of Victoria