World's Best Scientists 2026 revealed!
Giuseppe Iannaccone

Giuseppe Iannaccone

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
58
Citations
16070
World Ranking
1828
National Ranking
36

Materials Science

D-Index
54
Citations
14356
World Ranking
8786
National Ranking
156

Giuseppe Iannaccone publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Giuseppe Iannaccone sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 396 publications — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Giuseppe Iannaccone D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Giuseppe Iannaccone sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 58 D-Index — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2015 - Fellow of American Physical Society (APS) Citation For contributions to the theory of quantum transport and noise in mesoscopic and nanoelectronic devices and to their application in electronics
  • 2015 - IEEE Fellow For contributions to modeling transport and noise processes in nanoelectronic devices

Overview

Giuseppe Iannaccone is affiliated with the University of Pisa in Italy and has contributed extensively to the fields of Engineering and Materials Science, with 89 and 71 publications respectively. Their work focuses heavily on Electrical and Electronic Engineering as well as Materials Chemistry, covering 69 and 68 publications in these subfields. Other areas of research include Biomedical Engineering, Atomic and Molecular Physics and Optics, and Artificial Intelligence.

The main topics of study addressed by Iannaccone include:

  • 2D Materials and Applications
  • Graphene research and applications
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Semiconductor materials and devices
  • Chalcogenide Semiconductor Thin Films
  • Advancements in Semiconductor Devices and Circuit Design

Among the recent papers authored or co-authored by Iannaccone are:

  • Power Electronics Based on Wide-Bandgap Semiconductors: Opportunities and Challenges, 2021, IEEE Access
  • Analogue two-dimensional semiconductor electronics, 2020, CINECA IRIS Institutional research information system (University of Pisa)
  • Printed transistors made of 2D material-based inks, 2023, Nature Reviews Materials
  • Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source, 2020, ACS Nano
  • Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices, 2023, Science Advances

Iannaccone frequently collaborates with several researchers, including Gianluca Fiori, Sebastiano Strangio, Enrique G. Marín, Damiano Marian, and Massimo Macucci, reflecting an active network in the semiconductor and nanotechnology research community.

Their publications are commonly found in venues such as:

  • arXiv (Cornell University)
  • IEEE Access
  • Zenodo (CERN European Organization for Nuclear Research)
  • Advanced Electronic Materials
  • Physical Review Applied

Giuseppe Iannaccone has been recognized by the American Physical Society with a Fellowship awarded in 2015 for contributions to quantum transport and noise theory in mesoscopic and nanoelectronic devices. The same year, they were named IEEE Fellow for work on modeling transport and noise processes in nanoelectronic devices.

Best Publications

  • Electronics based on two-dimensional materials

    Gianluca Fiori;Francesco Bonaccorso;Giuseppe Iannaccone;Tomás Palacios

  • Quantum engineering of transistors based on 2D materials heterostructures

    Giuseppe Iannaccone;Francesco Bonaccorso;Luigi Colombo;Gianluca Fiori

  • Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures

    Daryl McManus;Sandra Vranic;Freddie Withers;Veronica Sanchez-Romaguera

  • Design criteria for the RF section of UHF and microwave passive RFID transponders

    G. De Vita;G. Iannaccone

  • Simulation of Graphene Nanoribbon Field-Effect Transistors

    G. Fiori;G. Iannaccone

  • A Sub-1-V, 10 ppm/ $^{\circ}$ C, Nanopower Voltage Reference Generator

    G. De Vita;G. Iannaccone

  • A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference

    L Magnelli;F Crupi;P Corsonello;C Pace

  • Performance of arsenene and antimonene double-gate MOSFETs from first principles

    Giovanni Pizzi;Marco Gibertini;Elias Dib;Nicola Marzari

  • Low-Power Wearable ECG Monitoring System for Multiple-Patient Remote Monitoring

    Elisa Spano;Stefano Di Pascoli;Giuseppe Iannaccone

  • Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs

    Youngki Yoon;G. Fiori;Seokmin Hong;G. Iannaccone

  • Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

    Luca Sayadi;Giuseppe Iannaccone;Sebastien Sicre;Oliver Haberlen

  • Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

    Silvia Conti;Lorenzo Pimpolari;Gabriele Calabrese;Robyn Worsley

  • ENHANCED SHOT NOISE IN RESONANT TUNNELING : THEORY AND EXPERIMENT

    G. Iannaccone;G. Lombardi;M. Macucci;B. Pellegrini

  • Last-Meter Smart Grid Embedded in an Internet-of-Things Platform

    Elisa Spano;Luca Niccolini;Stefano Di Pascoli;Giuseppe Iannaccone

  • Ultralow-Voltage Bilayer Graphene Tunnel FET

    G. Fiori;G. Iannaccone

  • Electrical properties of graphene-metal contacts

    Teresa Cusati;Gianluca Fiori;Amit Gahoi;Amit Gahoi;Vikram Passi;Vikram Passi

  • An energy case for hybrid datacenters

    Byung-Gon Chun;Gianluca Iannaccone;Giuseppe Iannaccone;Randy Katz

  • Multiscale Modeling for Graphene-Based Nanoscale Transistors

    Gianluca Fiori;G. Iannaccone

  • Lateral Graphene–hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors

    Gianluca Fiori;Alessandro Betti;Samantha Bruzzone;Giuseppe Iannaccone

  • All-2D Material Inkjet-Printed Capacitors: Toward Fully Printed Integrated Circuits

    Robyn Worsley;Lorenzo Pimpolari;Daryl McManus;Ning Ge

  • Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam.

    Y. Katagiri;T. Nakamura;A. Ishii;C. Ohata

  • A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry

    G. Fiori;G. Iannaccone;G. Klimeck

Frequent Co-Authors

Gianluca Fiori
Gianluca Fiori University of Pisa
Felice Crupi
Felice Crupi University of Calabria
Alessandro Fortunelli
Alessandro Fortunelli National Research Council (CNR)
Max C. Lemme
Max C. Lemme RWTH Aachen University
Gerhard Klimeck
Gerhard Klimeck Purdue University West Lafayette
Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
Susanna Reggiani
Susanna Reggiani University of Bologna
Pierpaolo Palestri
Pierpaolo Palestri University of Udine
B. De Salvo
B. De Salvo Meta for Business
Fabio Beltram
Fabio Beltram Scuola Normale Superiore di Pisa

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