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Susanna Reggiani

Susanna Reggiani

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
4791
World Ranking
6046
National Ranking
265

Overview

Susanna Reggiani is affiliated with the University of Bologna in Italy. Their research primarily focuses on engineering and materials science, with specific emphasis on electrical and electronic engineering, materials chemistry, biomedical engineering, electronic, optical and magnetic materials, and condensed matter physics.

Their work covers a range of topics within semiconductor science and technology, including:

  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • High voltage insulation and dielectric phenomena
  • Electrostatic Discharge in Electronics
  • Thin-Film Transistor Technologies
  • GaN-based semiconductor devices and materials

Susanna Reggiani has been involved in multiple papers addressing various aspects of semiconductor materials and high-voltage insulation. Recent publications include:

  • Effects of Filler Configuration and Moisture on Dissipation Factor and Critical Electric Field of Epoxy Composites for HV-ICs Encapsulation (2020, Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna))
  • Space Charge Redistribution in Epoxy Mold Compounds of High-Voltage ICs at Dry and Wet Conditions: Theory and Experiment (2021, IEEE Transactions on Dielectrics and Electrical Insulation)
  • BTI saturation and universal relaxation in SiC power MOSFETs (2020, Microelectronics Reliability)
  • Anomalous increase of leakage current in epoxy moulding compounds under wet conditions (2023, Solid-State Electronics)
  • Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO2 Insulators (2021, IEEE Transactions on Electron Devices)

Frequently collaborating with other researchers, their most frequent co-authors include Elena Gnani, A. Gnudi, Luigi Balestra, Mattia Rossetti, and Riccardo Depetro.

Their research outputs are often published in these venues:

  • Solid-State Electronics
  • IEEE Transactions on Electron Devices
  • Microelectronics Reliability
  • Archivio istituzionale della ricerca (Alma Mater Studiorum Università di Bologna)
  • IEEE Transactions on Dielectrics and Electrical Insulation

Susanna Reggiani is also credited with contributing to book publications, including a chapter in the "Springer Handbook of Semiconductor Devices" published by Springer International Publishing in 2022.

Best Publications

  • Theory of the Junctionless Nanowire FET

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • Quantum logic gates based on coherent electron transport in quantum wires.

    A. Bertoni;Paolo Bordone;Rossella Brunetti;Carlo Jacoboni

  • A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects

    G. Baccarani;S. Reggiani

  • Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs

    A. Gnudi;S. Reggiani;E. Gnani;G. Baccarani

  • Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors

    A. Gnudi;S. Reggiani;E. Gnani;G. Baccarani

  • Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility

    S. Reggiani;M. Valdinoci;L. Colalongo;M. Rudan

  • Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

    Giovanni Betti Beneventi;Elena Gnani;Antonio Gnudi;Susanna Reggiani

  • Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

    M. Lenzi;P. Palestri;E. Gnani;S. Reggiani

  • Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses

    S.. Reggiani;E.. Gnani;A.. Gnudi;M.. Rudan

  • TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors

    S. Reggiani;G. Barone;S. Poli;E. Gnani

  • Band-Structure Effects in Ultrascaled Silicon Nanowires

    E. Gnani;S. Reggiani;A. Gnudi;P. Parruccini

  • Physical Model of the Junctionless UTB SOI-FET

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • Coherent electron transport in bent cylindrical surfaces

    Alex Marchi;Susanna Reggiani;Massimo Rudan;Andrea Bertoni

  • Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs

    Alex Marchi;Elena Gnani;Susanna Reggiani;Massimo Rudan

  • Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model

    Elena Gnani;Antonio Gnudi;Susanna Reggiani;Giorgio Baccarani

  • Computational Study of the Ultimate Scaling Limits of CNT Tunneling Devices

    S. Poli;S. Reggiani;A. Gnudi;E. Gnani

  • Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation

    Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani

  • Optimization of n- and p-type TFETs Integrated on the Same ${ m InAs}/{ m Al}_{x}{ m Ga}_{1-x}{ m Sb}$ Technology Platform

    Emanuele Baravelli;Elena Gnani;Roberto Grassi;Antonio Gnudi

  • Quasi-Ballistic Transport in Nanowire Field-Effect Transistors

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • Band-structure calculations of SiO/sub 2/ by means of Hartree-Fock and density-functional techniques

    E. Gnani;S. Reggiani;R. Colle;M. Rudan

  • Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs

    R. Grassi;S. Poli;E. Gnani;A. Gnudi

Frequent Co-Authors

Elena Gnani
Elena Gnani University of Bologna
Giorgio Baccarani
Giorgio Baccarani University of Bologna
Claudio Fiegna
Claudio Fiegna University of Bologna
Pierpaolo Palestri
Pierpaolo Palestri University of Udine
Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
Gianluca Fiori
Gianluca Fiori University of Pisa
Giuseppe Iannaccone
Giuseppe Iannaccone University of Pisa
Navab Singh
Navab Singh Agency for Science, Technology and Research
David Esseni
David Esseni University of Udine

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