World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
58
Citations
16574
World Ranking
1825
National Ranking
44

Research.com Recognitions

  • 2016 - IEEE Fellow For contributions to the development of novel devices for low power applications

Overview

Adrian M. Ionescu is affiliated with the École Polytechnique Fédérale de Lausanne in Switzerland. Their research spans multiple areas within engineering and materials science, with a strong emphasis on electrical and electronic engineering alongside subfields such as materials chemistry, biomedical engineering, bioengineering, and atomic and molecular physics and optics.

The scientist's main research topics include:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Analytical Chemistry and Sensors
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Memory and Neural Computing
  • Transition Metal Oxide Nanomaterials
  • Nanowire Synthesis and Applications

Ionescu's recent papers illustrate engagement with a variety of scientific challenges ranging from data processing technologies to nanoscale devices for sensing and logic applications. Some notable publications are:

  • "Delta lake," 2020, Proceedings of the VLDB Endowment
  • "Extended gate field-effect-transistor for sensing cortisol stress hormone," 2021, Communications Materials
  • "A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon," 2021, Nature Electronics
  • "Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices," 2023, Nature Electronics
  • "Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects," 2020, Nano Letters

Frequent coauthors collaborating with Ionescu include Ali Saeidi, Igor Stolichnov, Matteo Cavalieri, Carlotta Gastaldi, and Sadegh Kamaei.

The scientist's work is often published in venues such as Applied Physics Letters, arXiv (Cornell University), IEEE Journal of the Electron Devices Society, Sensors, and ACS Applied Electronic Materials, indicating an ongoing presence in both highly technical journals and accessible preprint archives.

Adrian M. Ionescu was awarded the IEEE Fellow distinction in 2016 for contributions to the development of novel devices for low power applications. This award acknowledges a specific focus on energy-efficient technologies within their overall research.

Best Publications

  • Tunnel field-effect transistors as energy-efficient electronic switches

    Adrian M. Ionescu;Heike Riel

  • Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric

    K. Boucart;A.M. Ionescu

  • Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric

    Kathy Boucart;Adrian Mihai Ionescu

  • Metal-Ferroelectric-Meta-Oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification

    Alexandru Rusu;Giovanni A. Salvatore;David Jimenez;Adrian M. Ionescu

  • Suspended-gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor

    N. Abele;R. Fritschi;K. Boucart;F. Casset

  • Analytical modeling of single electron transistor for hybrid CMOS-SET analog IC design

    S. Mahapatra;V. Vaish;C. Wasshuber;K. Banerjee

  • A new definition of threshold voltage in Tunnel FETs

    Kathy Boucart;Adrian Mihai Ionescu

  • Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO 2 gate stack

    G.A. Salvatore;D. Bouvet;A.M. Ionescu

  • Self-biased reconfigurable graphene stacks for terahertz plasmonics

    J.S. Gomez-Diaz;J.S. Gomez-Diaz;C Moldovan;S Capdevila;J Romeu

  • Structural, magnetic, electronic, and spin transport properties of epitaxial Fe 3 Si ∕ GaAs ( 001 )

    A. Ionescu;C. A. F. Vaz;T. Trypiniotis;C. M. Gürtler

  • TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model

    Arnab Biswas;Surya Shankar Dan;Cyrille Le Royer;Wladyslaw Grabinski

  • Near optimal graphene terahertz non-reciprocal isolator

    Michele Tamagnone;Clara Moldovan;Jean-Marie Poumirol;Alexey B. Kuzmenko

  • CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology

    P. Dainesi;A. Kung;M. Chabloz;A. Lagos

  • Complementary Germanium Electron–Hole Bilayer Tunnel FET for Sub-0.5-V Operation

    L. Lattanzio;L. De Michielis;A. M. Ionescu

  • Extended gate field-effect-transistor for sensing cortisol stress hormone.

    Shokoofeh Sheibani;Shokoofeh Sheibani;Luca Capua;Sadegh Kamaei;Sayedeh Shirin Afyouni Akbari

  • Characterization of Ni thin films following thermal oxidation in air

    Luis De Los Santos Valladares;Adrian Ionescu;Stuart Holmes;Crispin H. W. Barnes

  • Non-contact characterization of graphene surface impedance at micro and millimeter waves

    J. S. Gómez-Díaz;J. Perruisseau-Carrier;P. Sharma;A. Ionescu

  • Double Gate Tunnel FET with ultrathin silicon body and high-k gate dielectric

    Unknown

  • The electron–hole bilayer tunnel FET

    Livio Lattanzio;Luca De Michielis;Adrian M. Ionescu

  • Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

    K. Akarvardar;C. Eggimann;D. Tsamados;Y. Singh Chauhan

  • A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon

    Clarissa Convertino;Cezar B. Zota;Heinz Schmid;Daniele Caimi

  • Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

    L. De Michielis;L. Lattanzio;A. M. Ionescu

  • Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor

    Giovanni A. Salvatore;Alexandru Rusu;Adrian M. Ionescu

Frequent Co-Authors

Kirsten Moselund
Kirsten Moselund Paul Scherrer Institute
Yogesh Singh Chauhan
Yogesh Singh Chauhan Indian Institute of Technology Kanpur
Giovanni A. Salvatore
Giovanni A. Salvatore Ca Foscari University of Venice
Kaustav Banerjee
Kaustav Banerjee University of California, Santa Barbara
Pierpaolo Palestri
Pierpaolo Palestri University of Udine
Julien Perruisseau-Carrier
Julien Perruisseau-Carrier École Polytechnique Fédérale de Lausanne
Juan R. Mosig
Juan R. Mosig École Polytechnique Fédérale de Lausanne
Arnaud Magrez
Arnaud Magrez École Polytechnique Fédérale de Lausanne
Yusuf Leblebici
Yusuf Leblebici École Polytechnique Fédérale de Lausanne
Luca Selmi
Luca Selmi University of Modena and Reggio Emilia

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