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Adrian M. Ionescu

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 58 1825 1749 44 43 651 16574

Adrian M. Ionescu publications per year

The chart shows the history of publications by Adrian M. Ionescu between 1991 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Adrian M. Ionescu published across 35 years, from 1991 to 2025, averaging 21.4 papers a year. Output peaked at 48 publications in 2008. 20 of the 750 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 1991 to 2025. Vertical axis: number of publications, 0 to 48. Peak 48 publications in 2008. 1991: 1 publication 1992: 0 publications 1993: 2 publications 1994: 2 publications 1995: 3 publications 1996: 5 publications 1997: 5 publications 1998: 2 publications 1999: 3 publications 2000: 3 publications 2001: 8 publications 2002: 20 publications 2003: 23 publications 2004: 21 publications 2005: 35 publications 2006: 43 publications 2007: 32 publications 2008: 48 publications 2009: 37 publications 2010: 46 publications 2011: 41 publications 2012: 39 publications 2013: 33 publications 2014: 31 publications 2015: 37 publications 2016: 37 publications 2017: 26 publications 2018: 39 publications 2019: 24 publications 2020: 30 publications 2021: 24 publications 2022: 16 publications 2023: 14 publications 2024: 9 publications 2025: 11 publications
1991 2025

750 publications in total across all disciplines

View publications per year as a table
Adrian M. Ionescu: publications per year, 1991 to 2025
Year Publications
1991 1
1992 0
1993 2
1994 2
1995 3
1996 5
1997 5
1998 2
1999 3
2000 3
2001 8
2002 20
2003 23
2004 21
2005 35
2006 43
2007 32
2008 48
2009 37
2010 46
2011 41
2012 39
2013 33
2014 31
2015 37
2016 37
2017 26
2018 39
2019 24
2020 30
2021 24
2022 16
2023 14
2024 9
2025 11
Total 750
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Adrian M. Ionescu publications per year - data summary

  • Adrian M. Ionescu, a Electronics and Electrical Engineering scholar from École Polytechnique Fédérale de Lausanne, has 750 publications recorded across 35 years, from 1991 to 2025.
  • The oldest publication on record dates to 1991 and the most recent to 2025.
  • The most productive year is 2008, with 48 publications.
  • The least productive year with any output is 1991, with 1 publication.
  • 1 of the 35 years in the span carries no publications at all (1992).
  • The rate of publication averages 21.4 papers per year over the whole span, or 22.1 per year counting only the 34 years with at least one publication.
  • The last 5 years on the chart (2021-2025) hold 74 publications, 10% of the career total.
  • Split into equal eras - 1991-2002: 54 publications (4.5 per year); 2003-2014: 429 publications (35.8 per year); 2015-2025: 267 publications (24.3 per year).
  • Comparing the opening and closing eras, the overall trend of publication is rising.

Adrian M. Ionescu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Adrian M. Ionescu sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 634–653 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 651 publications — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62 651
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Adrian M. Ionescu publication distribution in Electronics and Electrical Engineering in 2026 - data summary

  • The chart plots the publication count of all 6,875 Electronics and Electrical Engineering scientists ranked by Research.com in 2026, grouped into 53 ranges running from 34–53 to 1,065+ publications.
  • Adrian M. Ionescu, a Electronics and Electrical Engineering scholar from École Polytechnique Fédérale de Lausanne, records 651 publications - the 92nd percentile of the discipline.
  • 92% of ranked Electronics and Electrical Engineering scientists score the same or lower than Adrian M. Ionescu, and about 8% score higher.
  • The median of the discipline falls in the 254–273 publications range, and Adrian M. Ionescu ranks above the median.
  • The most crowded range is 174–193 publications, holding 445 scientists (6% of the field).
  • 60% of the field sits in the lowest quarter of the value range (up to 294–313 publications), so the distribution is heavily right-skewed and high scores are rare.
  • The final bar has no upper bound: it groups every scientist with 1,065 publications or more, 99 scientists in all (1% of the field).

Adrian M. Ionescu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Adrian M. Ionescu sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 58 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 58 D-Index — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108 58
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Adrian M. Ionescu D-index placement in Electronics and Electrical Engineering in 2026 - data summary

  • The chart plots the discipline H-index (D-index) of all 6,875 Electronics and Electrical Engineering scientists ranked by Research.com in 2026, grouped into 82 ranges running from 30 to 111+ D-Index.
  • Adrian M. Ionescu, a Electronics and Electrical Engineering scholar from École Polytechnique Fédérale de Lausanne, records 58 D-Index - the 74th percentile of the discipline.
  • 74% of ranked Electronics and Electrical Engineering scientists score the same or lower than Adrian M. Ionescu, and about 26% score higher.
  • The median of the discipline falls in the 46 D-Index range, and Adrian M. Ionescu ranks above the median.
  • The most crowded range is 32 D-Index, holding 263 scientists (4% of the field).
  • 60% of the field sits in the lowest quarter of the value range (up to 50 D-Index), so the distribution is heavily right-skewed and high scores are rare.
  • The final bar has no upper bound: it groups every scientist with 111 D-Index or more, 96 scientists in all (1% of the field).

Research.com Recognitions

  • 2016 - IEEE Fellow For contributions to the development of novel devices for low power applications

Overview

Adrian M. Ionescu is affiliated with the École Polytechnique Fédérale de Lausanne in Switzerland. Their research spans multiple areas within engineering and materials science, with a strong emphasis on electrical and electronic engineering alongside subfields such as materials chemistry, biomedical engineering, bioengineering, and atomic and molecular physics and optics.

The scientist's main research topics include:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Analytical Chemistry and Sensors
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Memory and Neural Computing
  • Transition Metal Oxide Nanomaterials
  • Nanowire Synthesis and Applications

Ionescu's recent papers illustrate engagement with a variety of scientific challenges ranging from data processing technologies to nanoscale devices for sensing and logic applications. Some notable publications are:

  • "Delta lake," 2020, Proceedings of the VLDB Endowment
  • "Extended gate field-effect-transistor for sensing cortisol stress hormone," 2021, Communications Materials
  • "A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon," 2021, Nature Electronics
  • "Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices," 2023, Nature Electronics
  • "Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects," 2020, Nano Letters

Frequent coauthors collaborating with Ionescu include Ali Saeidi, Igor Stolichnov, Matteo Cavalieri, Carlotta Gastaldi, and Sadegh Kamaei.

The scientist's work is often published in venues such as Applied Physics Letters, arXiv (Cornell University), IEEE Journal of the Electron Devices Society, Sensors, and ACS Applied Electronic Materials, indicating an ongoing presence in both highly technical journals and accessible preprint archives.

Adrian M. Ionescu was awarded the IEEE Fellow distinction in 2016 for contributions to the development of novel devices for low power applications. This award acknowledges a specific focus on energy-efficient technologies within their overall research.

Best Publications

  • Tunnel field-effect transistors as energy-efficient electronic switches

    Adrian M. Ionescu;Heike Riel

  • Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric

    K. Boucart;A.M. Ionescu

  • Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric

    Kathy Boucart;Adrian Mihai Ionescu

  • Metal-Ferroelectric-Meta-Oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification

    Alexandru Rusu;Giovanni A. Salvatore;David Jimenez;Adrian M. Ionescu

  • Suspended-gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor

    N. Abele;R. Fritschi;K. Boucart;F. Casset

  • Analytical modeling of single electron transistor for hybrid CMOS-SET analog IC design

    S. Mahapatra;V. Vaish;C. Wasshuber;K. Banerjee

  • A new definition of threshold voltage in Tunnel FETs

    Kathy Boucart;Adrian Mihai Ionescu

  • Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO 2 gate stack

    G.A. Salvatore;D. Bouvet;A.M. Ionescu

  • Self-biased reconfigurable graphene stacks for terahertz plasmonics

    J.S. Gomez-Diaz;J.S. Gomez-Diaz;C Moldovan;S Capdevila;J Romeu

  • Structural, magnetic, electronic, and spin transport properties of epitaxial Fe 3 Si ∕ GaAs ( 001 )

    A. Ionescu;C. A. F. Vaz;T. Trypiniotis;C. M. Gürtler

  • TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model

    Arnab Biswas;Surya Shankar Dan;Cyrille Le Royer;Wladyslaw Grabinski

  • Near optimal graphene terahertz non-reciprocal isolator

    Michele Tamagnone;Clara Moldovan;Jean-Marie Poumirol;Alexey B. Kuzmenko

  • CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology

    P. Dainesi;A. Kung;M. Chabloz;A. Lagos

  • Complementary Germanium Electron–Hole Bilayer Tunnel FET for Sub-0.5-V Operation

    L. Lattanzio;L. De Michielis;A. M. Ionescu

  • Extended gate field-effect-transistor for sensing cortisol stress hormone.

    Shokoofeh Sheibani;Shokoofeh Sheibani;Luca Capua;Sadegh Kamaei;Sayedeh Shirin Afyouni Akbari

  • Characterization of Ni thin films following thermal oxidation in air

    Luis De Los Santos Valladares;Adrian Ionescu;Stuart Holmes;Crispin H. W. Barnes

  • Non-contact characterization of graphene surface impedance at micro and millimeter waves

    J. S. Gómez-Díaz;J. Perruisseau-Carrier;P. Sharma;A. Ionescu

  • Double Gate Tunnel FET with ultrathin silicon body and high-k gate dielectric

    Unknown

  • The electron–hole bilayer tunnel FET

    Livio Lattanzio;Luca De Michielis;Adrian M. Ionescu

  • Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

    K. Akarvardar;C. Eggimann;D. Tsamados;Y. Singh Chauhan

  • A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon

    Clarissa Convertino;Cezar B. Zota;Heinz Schmid;Daniele Caimi

  • Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

    L. De Michielis;L. Lattanzio;A. M. Ionescu

  • Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor

    Giovanni A. Salvatore;Alexandru Rusu;Adrian M. Ionescu

Frequent Co-Authors

Kirsten Moselund
Kirsten Moselund Paul Scherrer Institute
Yogesh Singh Chauhan
Yogesh Singh Chauhan Indian Institute of Technology Kanpur
Giovanni A. Salvatore
Giovanni A. Salvatore Ca Foscari University of Venice
Francisco Gamiz
Francisco Gamiz University of Granada
Kaustav Banerjee
Kaustav Banerjee University of California, Santa Barbara
Julien Perruisseau-Carrier
Julien Perruisseau-Carrier École Polytechnique Fédérale de Lausanne
Pierpaolo Palestri
Pierpaolo Palestri University of Udine
Juan R. Mosig
Juan R. Mosig École Polytechnique Fédérale de Lausanne
Arnaud Magrez
Arnaud Magrez École Polytechnique Fédérale de Lausanne
Yusuf Leblebici
Yusuf Leblebici École Polytechnique Fédérale de Lausanne

External Links

Wikipedia of Adrian M. Ionescu Personal website of Adrian M. Ionescu Google Scholar page

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