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David Esseni

David Esseni

University of Udine
Italy

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 52 2565 2461 66 65 336 8585

David Esseni publications per year

The chart shows the history of publications by David Esseni between 1994 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. David Esseni published across 32 years, from 1994 to 2025, averaging 11.7 papers a year. Output peaked at 28 publications in 2011. 21 of the 373 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1994 to 2025. Vertical axis: number of publications, 0 to 28. Peak 28 publications in 2011. 1994: 1 publication 1995: 3 publications 1996: 1 publication 1997: 0 publications 1998: 5 publications 1999: 5 publications 2000: 7 publications 2001: 11 publications 2002: 10 publications 2003: 10 publications 2004: 11 publications 2005: 17 publications 2006: 9 publications 2007: 18 publications 2008: 11 publications 2009: 16 publications 2010: 19 publications 2011: 28 publications 2012: 9 publications 2013: 17 publications 2014: 22 publications 2015: 22 publications 2016: 14 publications 2017: 11 publications 2018: 14 publications 2019: 11 publications 2020: 11 publications 2021: 13 publications 2022: 17 publications 2023: 9 publications 2024: 9 publications 2025: 12 publications
1994 2025

373 publications in total across all disciplines

View publications per year as a table
David Esseni: publications per year, 1994 to 2025
Year Publications
1994 1
1995 3
1996 1
1997 0
1998 5
1999 5
2000 7
2001 11
2002 10
2003 10
2004 11
2005 17
2006 9
2007 18
2008 11
2009 16
2010 19
2011 28
2012 9
2013 17
2014 22
2015 22
2016 14
2017 11
2018 14
2019 11
2020 11
2021 13
2022 17
2023 9
2024 9
2025 12
Total 373
Download as CSV

David Esseni publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where David Esseni sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 334–353 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 336 publications — 65th percentile

65% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250 336
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

David Esseni D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where David Esseni sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 52 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 52 D-Index — 64th percentile

64% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108 52
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Research.com Recognitions

  • 2013 - IEEE Fellow For contributions to characterization and modeling of mobility and quasi-ballistic transport in MOS transistors

Overview

David Esseni is affiliated with the University of Udine in Italy, contributing extensively to the fields of Engineering and Materials Science, particularly within Electrical and Electronic Engineering and Materials Chemistry. Their research addresses key topics such as semiconductor materials and devices, ferroelectric and negative capacitance devices, and advanced memory and neural computing.

Esseni's work spans several specialized areas including:

  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Advancements in Semiconductor Devices and Circuit Design
  • Graphene research and applications
  • 2D Materials and Applications
  • Molecular Junctions and Nanostructures

They have published recent papers in prestigious venues, illustrating ongoing contributions to their fields. Notable recent publications include:

  • Intrinsic Nature of Negative Capacitance in Multidomain Hf0.5Zr0.5O2-Based Ferroelectric/Dielectric Heterostructures, 2021, Advanced Functional Materials
  • Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer, 2020, Nanoscale
  • Neuromorphic object localization using resistive memories and ultrasonic transducers, 2022, Nature Communications
  • Large temperature coefficient of resistance in atomically thin two-dimensional semiconductors, 2020, Applied Physics Letters
  • Modeling and Design of FTJs as Multi-Level Low Energy Memristors for Neuromorphic Computing, 2021, IEEE Journal of the Electron Devices Society

Their frequent coauthors include F. Driussi, Daniel Lizzit, Riccardo Fontanini, Marco Massarotto, and Pierpaolo Palestri, with collaboration counts ranging from 10 to 18 joint works each.

Esseni commonly publishes in venues focused on solid-state and electronic devices, including the following publication venues:

  • Solid-State Electronics
  • IEEE Transactions on Electron Devices
  • arXiv (Cornell University)
  • Nanoscale
  • IEEE Journal of the Electron Devices Society

The scientist's interdisciplinary work intersects with subfields such as Atomic and Molecular Physics, and Optics, as well as Biomedical Engineering and Artificial Intelligence.

In recognition of their contributions, David Esseni was named an IEEE Fellow in 2013 for work related to the characterization and modeling of mobility and quasi-ballistic transport in MOS transistors.

Best Publications

  • Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

    Anderson Smith;Frank Niklaus;A. Paussa;Sam Vaziri

  • Nanoscale MOS Transistors: Semi-Classical Transport and Applications

    David Esseni;Pierpaolo Palestri;Luca Selmi

  • Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

    L. Knoll;Qing-Tai Zhao;A. Nichau;S. Trellenkamp

  • Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs

    D. Esseni;A. Abramo;L. Selmi;E. Sangiorgi

  • Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain

    P. Palestri;D. Esseni;S. Eminente;C. Fiegna

  • Nanoscale MOS Transistors

    Unknown

  • Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors

    Anderson David Smith;Frank Niklaus;Alan Paussa;Stephan Schröder

  • Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs

    D. Esseni;A. Abramo

  • Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application

    D. Esseni;M. Mastrapasqua;G.K. Celler;C. Fiegna

  • Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs)

    Mingda Oscar Li;David Esseni;Joseph J. Nahas;Debdeep Jena

  • Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs

    L. Lucci;P. Palestri;D. Esseni;L. Bergagnini

  • On the modeling of surface roughness limited mobility in SOI MOSFETs and its correlation to the transistor effective field

    D. Esseni

  • An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode

    D. Esseni;M. Mastrapasqua;G.K. Celler;C. Fiegna

  • Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor

    Mingda (Oscar) Li;David Esseni;Gregory Snider;Debdeep Jena

  • A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces

    Andrea Bandiziol;Pierpaolo Palestri;Federico Pittino;David Esseni

  • Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

    F. Conzatti;M. G. Pala;D. Esseni;E. Bano

  • Universal analytic model for tunnel FET circuit simulation

    Hao Lu;David Esseni;Alan Seabaugh

  • Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

    M. Lenzi;P. Palestri;E. Gnani;S. Reggiani

  • Leakage–Delay Tradeoff in FinFET Logic Circuits: A Comparative Analysis With Bulk Technology

    M. Agostinelli;M. Alioto;D. Esseni;L. Selmi

  • Trading-off programming speed and current absorption in flash memories with the ramped-gate programming technique

    D. Esseni;C. Villa;S. Tassan;B. Ricco

  • Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs—Part I: Model Description and Single Trap Analysis in Tunnel-FETs

    Marco G. Pala;David Esseni

Frequent Co-Authors

Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
Pierpaolo Palestri
Pierpaolo Palestri University of Udine
Claudio Fiegna
Claudio Fiegna University of Bologna
Bruno Ricco
Bruno Ricco University of Bologna
Felice Crupi
Felice Crupi University of Calabria
Massimo Alioto
Massimo Alioto National University of Singapore
Max C. Lemme
Max C. Lemme RWTH Aachen University
Roberto Bez
Roberto Bez Micron (United States)
Elena Gnani
Elena Gnani University of Bologna
Giorgio Baccarani
Giorgio Baccarani University of Bologna

External Links

Personal website of David Esseni Google Scholar page

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Best Scientists Citing David Esseni

Luca Selmi

Luca Selmi

University of Modena and Reggio Emilia

Publications: 50

Pierpaolo Palestri

Pierpaolo Palestri

University of Udine

Publications: 48

Francisco Gamiz

Francisco Gamiz

University of Granada

Publications: 43

Max C. Lemme

Max C. Lemme

RWTH Aachen University

Publications: 43

Qing-Tai Zhao

Qing-Tai Zhao

Peking University

Publications: 40

Elena Gnani

Elena Gnani

University of Bologna

Publications: 39

Susanna Reggiani

Susanna Reggiani

University of Bologna

Publications: 39

Gerard Ghibaudo

Gerard Ghibaudo

Grenoble Alpes University

Publications: 37

Giorgio Baccarani

Giorgio Baccarani

University of Bologna

Publications: 33

Asen Asenov

Asen Asenov

University of Glasgow

Publications: 29

Guido Groeseneken

Guido Groeseneken

Imec

Publications: 27

Mikael Östling

Mikael Östling

Royal Institute of Technology

Publications: 26

Siegfried Selberherr

Siegfried Selberherr

TU Wien

Publications: 24

Sorin Cristoloveanu

Sorin Cristoloveanu

Grenoble Institute of Technology

Publications: 24

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Giuseppe Iannaccone

University of Pisa

Publications: 23

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Nadine Collaert

Imec

Publications: 21

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