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David Esseni

David Esseni

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
8585
World Ranking
2565
National Ranking
66

Research.com Recognitions

  • 2013 - IEEE Fellow For contributions to characterization and modeling of mobility and quasi-ballistic transport in MOS transistors

Overview

David Esseni is affiliated with the University of Udine in Italy, contributing extensively to the fields of Engineering and Materials Science, particularly within Electrical and Electronic Engineering and Materials Chemistry. Their research addresses key topics such as semiconductor materials and devices, ferroelectric and negative capacitance devices, and advanced memory and neural computing.

Esseni's work spans several specialized areas including:

  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Advancements in Semiconductor Devices and Circuit Design
  • Graphene research and applications
  • 2D Materials and Applications
  • Molecular Junctions and Nanostructures

They have published recent papers in prestigious venues, illustrating ongoing contributions to their fields. Notable recent publications include:

  • Intrinsic Nature of Negative Capacitance in Multidomain Hf0.5Zr0.5O2-Based Ferroelectric/Dielectric Heterostructures, 2021, Advanced Functional Materials
  • Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer, 2020, Nanoscale
  • Neuromorphic object localization using resistive memories and ultrasonic transducers, 2022, Nature Communications
  • Large temperature coefficient of resistance in atomically thin two-dimensional semiconductors, 2020, Applied Physics Letters
  • Modeling and Design of FTJs as Multi-Level Low Energy Memristors for Neuromorphic Computing, 2021, IEEE Journal of the Electron Devices Society

Their frequent coauthors include F. Driussi, Daniel Lizzit, Riccardo Fontanini, Marco Massarotto, and Pierpaolo Palestri, with collaboration counts ranging from 10 to 18 joint works each.

Esseni commonly publishes in venues focused on solid-state and electronic devices, including the following publication venues:

  • Solid-State Electronics
  • IEEE Transactions on Electron Devices
  • arXiv (Cornell University)
  • Nanoscale
  • IEEE Journal of the Electron Devices Society

The scientist's interdisciplinary work intersects with subfields such as Atomic and Molecular Physics, and Optics, as well as Biomedical Engineering and Artificial Intelligence.

In recognition of their contributions, David Esseni was named an IEEE Fellow in 2013 for work related to the characterization and modeling of mobility and quasi-ballistic transport in MOS transistors.

Best Publications

  • Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

    Anderson Smith;Frank Niklaus;A. Paussa;Sam Vaziri

  • Nanoscale MOS Transistors: Semi-Classical Transport and Applications

    David Esseni;Pierpaolo Palestri;Luca Selmi

  • Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

    L. Knoll;Qing-Tai Zhao;A. Nichau;S. Trellenkamp

  • Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs

    D. Esseni;A. Abramo;L. Selmi;E. Sangiorgi

  • Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain

    P. Palestri;D. Esseni;S. Eminente;C. Fiegna

  • Nanoscale MOS Transistors

    Unknown

  • Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors

    Anderson David Smith;Frank Niklaus;Alan Paussa;Stephan Schröder

  • Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs

    D. Esseni;A. Abramo

  • Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application

    D. Esseni;M. Mastrapasqua;G.K. Celler;C. Fiegna

  • Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs)

    Mingda Oscar Li;David Esseni;Joseph J. Nahas;Debdeep Jena

  • Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs

    L. Lucci;P. Palestri;D. Esseni;L. Bergagnini

  • On the modeling of surface roughness limited mobility in SOI MOSFETs and its correlation to the transistor effective field

    D. Esseni

  • An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode

    D. Esseni;M. Mastrapasqua;G.K. Celler;C. Fiegna

  • Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor

    Mingda (Oscar) Li;David Esseni;Gregory Snider;Debdeep Jena

  • A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces

    Andrea Bandiziol;Pierpaolo Palestri;Federico Pittino;David Esseni

  • Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

    F. Conzatti;M. G. Pala;D. Esseni;E. Bano

  • Universal analytic model for tunnel FET circuit simulation

    Hao Lu;David Esseni;Alan Seabaugh

  • Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

    M. Lenzi;P. Palestri;E. Gnani;S. Reggiani

  • Leakage–Delay Tradeoff in FinFET Logic Circuits: A Comparative Analysis With Bulk Technology

    M. Agostinelli;M. Alioto;D. Esseni;L. Selmi

  • Trading-off programming speed and current absorption in flash memories with the ramped-gate programming technique

    D. Esseni;C. Villa;S. Tassan;B. Ricco

  • Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs—Part I: Model Description and Single Trap Analysis in Tunnel-FETs

    Marco G. Pala;David Esseni

Frequent Co-Authors

Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
Pierpaolo Palestri
Pierpaolo Palestri University of Udine
Claudio Fiegna
Claudio Fiegna University of Bologna
Bruno Ricco
Bruno Ricco University of Bologna
Felice Crupi
Felice Crupi University of Calabria
Massimo Alioto
Massimo Alioto National University of Singapore
Max C. Lemme
Max C. Lemme RWTH Aachen University
Roberto Bez
Roberto Bez Micron (United States)
Elena Gnani
Elena Gnani University of Bologna
Giorgio Baccarani
Giorgio Baccarani University of Bologna

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