The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where David Esseni sits on this spectrum.
This scientist: 336 publications — 65th percentile
65% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where David Esseni sits on this spectrum.
This scientist: 52 D-Index — 64th percentile
64% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
David Esseni is affiliated with the University of Udine in Italy, contributing extensively to the fields of Engineering and Materials Science, particularly within Electrical and Electronic Engineering and Materials Chemistry. Their research addresses key topics such as semiconductor materials and devices, ferroelectric and negative capacitance devices, and advanced memory and neural computing.
Esseni's work spans several specialized areas including:
They have published recent papers in prestigious venues, illustrating ongoing contributions to their fields. Notable recent publications include:
Their frequent coauthors include F. Driussi, Daniel Lizzit, Riccardo Fontanini, Marco Massarotto, and Pierpaolo Palestri, with collaboration counts ranging from 10 to 18 joint works each.
Esseni commonly publishes in venues focused on solid-state and electronic devices, including the following publication venues:
The scientist's interdisciplinary work intersects with subfields such as Atomic and Molecular Physics, and Optics, as well as Biomedical Engineering and Artificial Intelligence.
In recognition of their contributions, David Esseni was named an IEEE Fellow in 2013 for work related to the characterization and modeling of mobility and quasi-ballistic transport in MOS transistors.
Anderson Smith;Frank Niklaus;A. Paussa;Sam Vaziri
David Esseni;Pierpaolo Palestri;Luca Selmi
L. Knoll;Qing-Tai Zhao;A. Nichau;S. Trellenkamp
D. Esseni;A. Abramo;L. Selmi;E. Sangiorgi
P. Palestri;D. Esseni;S. Eminente;C. Fiegna
Unknown
Anderson David Smith;Frank Niklaus;Alan Paussa;Stephan Schröder
D. Esseni;A. Abramo
D. Esseni;M. Mastrapasqua;G.K. Celler;C. Fiegna
Mingda Oscar Li;David Esseni;Joseph J. Nahas;Debdeep Jena
L. Lucci;P. Palestri;D. Esseni;L. Bergagnini
D. Esseni
D. Esseni;M. Mastrapasqua;G.K. Celler;C. Fiegna
Mingda (Oscar) Li;David Esseni;Gregory Snider;Debdeep Jena
Andrea Bandiziol;Pierpaolo Palestri;Federico Pittino;David Esseni
F. Conzatti;M. G. Pala;D. Esseni;E. Bano
Hao Lu;David Esseni;Alan Seabaugh
M. Lenzi;P. Palestri;E. Gnani;S. Reggiani
M. Agostinelli;M. Alioto;D. Esseni;L. Selmi
D. Esseni;C. Villa;S. Tassan;B. Ricco
Marco G. Pala;David Esseni
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