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Claudio Fiegna

Claudio Fiegna

University of Bologna
Italy

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 31 6557 6296 301 296 243 4205

Claudio Fiegna publications per year

The chart shows the history of publications by Claudio Fiegna between 1989 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Claudio Fiegna published across 37 years, from 1989 to 2025, averaging 7.6 papers a year. Output peaked at 22 publications in 2013. 6 of the 282 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 1989 to 2025. Vertical axis: number of publications, 0 to 22. Peak 22 publications in 2013. 1989: 1 publication 1990: 5 publications 1991: 5 publications 1992: 2 publications 1993: 9 publications 1994: 8 publications 1995: 4 publications 1996: 1 publication 1997: 0 publications 1998: 4 publications 1999: 2 publications 2000: 2 publications 2001: 6 publications 2002: 11 publications 2003: 5 publications 2004: 7 publications 2005: 13 publications 2006: 12 publications 2007: 16 publications 2008: 19 publications 2009: 9 publications 2010: 12 publications 2011: 13 publications 2012: 17 publications 2013: 22 publications 2014: 14 publications 2015: 14 publications 2016: 13 publications 2017: 7 publications 2018: 6 publications 2019: 5 publications 2020: 3 publications 2021: 1 publication 2022: 4 publications 2023: 4 publications 2024: 3 publications 2025: 3 publications
1989 2025

282 publications in total across all disciplines

View publications per year as a table
Claudio Fiegna: publications per year, 1989 to 2025
Year Publications
1989 1
1990 5
1991 5
1992 2
1993 9
1994 8
1995 4
1996 1
1997 0
1998 4
1999 2
2000 2
2001 6
2002 11
2003 5
2004 7
2005 13
2006 12
2007 16
2008 19
2009 9
2010 12
2011 13
2012 17
2013 22
2014 14
2015 14
2016 13
2017 7
2018 6
2019 5
2020 3
2021 1
2022 4
2023 4
2024 3
2025 3
Total 282
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Claudio Fiegna publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Claudio Fiegna sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 234–253 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 243 publications — 43rd percentile

43% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399 243
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Claudio Fiegna D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Claudio Fiegna sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 31 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 31 D-Index — 6th percentile

6% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257 31
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Claudio Fiegna is affiliated with the University of Bologna in Italy. Their work primarily revolves around semiconductor devices, with a particular focus on GaN-based technologies and materials. They have contributed extensively to the field of Electrical and Electronic Engineering as well as Physics and Astronomy.

The scientist's research topics cover several areas, including:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor Quantum Structures and Devices
  • Ga2O3 and related materials
  • Ferroelectric and Negative Capacitance Devices

Fiegna's publication activity is documented in the following frequent venues:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Microelectronics Reliability
  • 2022 IEEE International Reliability Physics Symposium (IRPS)
  • Micromachines

Their notable papers include:

  • High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs, 2021, IEEE Transactions on Electron Devices
  • TCAD Modeling of the Dynamic V TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs, 2021, IEEE Transactions on Electron Devices
  • The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs, 2022, IEEE Electron Device Letters
  • Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate, 2020, Microelectronics Reliability
  • Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS)

Among frequent collaborators, Claudio Fiegna has extensively coauthored with:

  • Andrea Natale Tallarico
  • M. Millesimo
  • Benoit Bakeroot
  • Niels Posthuma
  • Matteo Borga

Best Publications

  • Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain

    P. Palestri;D. Esseni;S. Eminente;C. Fiegna

  • Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation

    C. Fiegna;Yang Yang;E. Sangiorgi;A.G. O'Neill

  • Scaling the MOS transistor below 0.1 /spl mu/m: methodology, device structures, and technology requirements

    C. Fiegna;H. Iwai;T. Wada;M. Saito

  • Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

    Andrea Natale Tallarico;Steve Stoffels;Paolo Magnone;Niels Posthuma

  • Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application

    D. Esseni;M. Mastrapasqua;G.K. Celler;C. Fiegna

  • Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions

    M. Ono;M. Saito;T. Yoshitomi;C. Fiegna

  • A 40 nm gate length n-MOSFET

    M. Ono;M. Saito;T. Yoshitomi;C. Fiegna

  • An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode

    D. Esseni;M. Mastrapasqua;G.K. Celler;C. Fiegna

  • Simple and efficient modeling of EPROM writing

    C. Fiegna;F. Venturi;M. Melanotte;E. Sangiorgi

  • PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

    Andrea Natale Tallarico;Steve Stoffels;Niels Posthuma;Paolo Magnone

  • Low field mobility of ultra-thin SOI N- and P-MOSFETs: Measurements and implications on the performance of ultra-short MOSFETs

    D. Esseni;M. Mastrapasqua;G.K. Celler;F.H. Baumann

  • An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation

    P. Palestri;Simone Eminente;D. Esseni;Claudio Fiegna

  • A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

    A. Abramo;L. Baudry;R. Brunetti;R. Castagne

  • Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS

    S. Eminente;D. Esseni;P. Palestri;C. Fiegna

  • Impact of Hot Carriers on nMOSFET Variability in 45- and 65-nm CMOS Technologies

    P. Magnone;F. Crupi;N. Wils;R. Jain

  • Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

    Andrea Natale Tallarico;Steve Stoffels;Niels Posthuma;Stefaan Decoutere

  • Simulation of self-heating effects in different SOI MOS architectures

    Marco Braccioli;G. Curatola;Y. Yang;Enrico Sangiorgi

  • Extended (1.1-2.9 eV) hot-carrier-induced photon emission in n-channel Si MOSFETs

    M. Lanzoni;E. Sangiorgi;C. Fiegna;M. Manfredi

  • Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

    S. Stoffels;B. Bakeroot;T. L. Wu;D. Marcon

  • Modeling of high-energy electrons in MOS devices at the microscopic level

    C. Fiegna;E. Sangiorgi

  • Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation☆

    Simone Eminente;Marco Alessandrini;Claudio Fiegna

Frequent Co-Authors

David Esseni
David Esseni University of Udine
Pierpaolo Palestri
Pierpaolo Palestri University of Udine
Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
Susanna Reggiani
Susanna Reggiani University of Bologna
Felice Crupi
Felice Crupi University of Calabria
Bruno Ricco
Bruno Ricco University of Bologna
Asen Asenov
Asen Asenov University of Glasgow
Stefaan Decoutere
Stefaan Decoutere Imec
Denis Marcon
Denis Marcon Imec
Giuseppe Iannaccone
Giuseppe Iannaccone University of Pisa

External Links

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Furthermore, a master's in instructional design is valuable for engineers interested in training and development roles, especially in creating technical education content and e-learning modules within engineering firms.

Best Scientists Citing Claudio Fiegna

Luca Selmi

Luca Selmi

University of Modena and Reggio Emilia

Publications: 45

Pierpaolo Palestri

Pierpaolo Palestri

University of Udine

Publications: 44

David Esseni

David Esseni

University of Udine

Publications: 41

Tibor Grasser

Tibor Grasser

TU Wien

Publications: 34

Francisco Gamiz

Francisco Gamiz

University of Granada

Publications: 33

Gaudenzio Meneghesso

Gaudenzio Meneghesso

University of Padua

Publications: 31

Matteo Meneghini

Matteo Meneghini

University of Padua

Publications: 30

Gerard Ghibaudo

Gerard Ghibaudo

Grenoble Alpes University

Publications: 25

Felice Crupi

Felice Crupi

University of Calabria

Publications: 24

Enrico Zanoni

Enrico Zanoni

University of Padua

Publications: 24

Asen Asenov

Asen Asenov

University of Glasgow

Publications: 24

Jean-Pierre Raskin

Jean-Pierre Raskin

Université Catholique de Louvain

Publications: 21

Kevin J. Chen

Kevin J. Chen

Hong Kong University of Science and Technology

Publications: 21

Ali A. Orouji

Ali A. Orouji

Semnan University

Publications: 20

Sorin Cristoloveanu

Sorin Cristoloveanu

Grenoble Institute of Technology

Publications: 19

Siegfried Selberherr

Siegfried Selberherr

TU Wien

Publications: 18

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