Claudio Fiegna

Overview

Best Publications

• Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain

  P. Palestri;D. Esseni;S. Eminente;C. Fiegna

  192
  Citations

• Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation

  C. Fiegna;Yang Yang;E. Sangiorgi;A.G. O'Neill

  174
  Citations

• Scaling the MOS transistor below 0.1 /spl mu/m: methodology, device structures, and technology requirements

  C. Fiegna;H. Iwai;T. Wada;M. Saito

  169
  Citations

• Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

  Andrea Natale Tallarico;Steve Stoffels;Paolo Magnone;Niels Posthuma

  165
  Citations

• Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application

  D. Esseni;M. Mastrapasqua;G.K. Celler;C. Fiegna

  158
  Citations

• Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions

  M. Ono;M. Saito;T. Yoshitomi;C. Fiegna

  157
  Citations

• A 40 nm gate length n-MOSFET

  M. Ono;M. Saito;T. Yoshitomi;C. Fiegna

  157
  Citations

• An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode

  D. Esseni;M. Mastrapasqua;G.K. Celler;C. Fiegna

  145
  Citations

• Simple and efficient modeling of EPROM writing

  C. Fiegna;F. Venturi;M. Melanotte;E. Sangiorgi

  111
  Citations

• PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

  Andrea Natale Tallarico;Steve Stoffels;Niels Posthuma;Paolo Magnone

  108
  Citations

• Low field mobility of ultra-thin SOI N- and P-MOSFETs: Measurements and implications on the performance of ultra-short MOSFETs

  D. Esseni;M. Mastrapasqua;G.K. Celler;F.H. Baumann

  100
  Citations

• An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation

  P. Palestri;Simone Eminente;D. Esseni;Claudio Fiegna

  91
  Citations

• A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

  A. Abramo;L. Baudry;R. Brunetti;R. Castagne

  91
  Citations

• Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS

  S. Eminente;D. Esseni;P. Palestri;C. Fiegna

  76
  Citations

• Impact of Hot Carriers on nMOSFET Variability in 45- and 65-nm CMOS Technologies

  P. Magnone;F. Crupi;N. Wils;R. Jain

  75
  Citations

• Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

  Andrea Natale Tallarico;Steve Stoffels;Niels Posthuma;Stefaan Decoutere

  63
  Citations

• Simulation of self-heating effects in different SOI MOS architectures

  Marco Braccioli;G. Curatola;Y. Yang;Enrico Sangiorgi

  60
  Citations

• Extended (1.1-2.9 eV) hot-carrier-induced photon emission in n-channel Si MOSFETs

  M. Lanzoni;E. Sangiorgi;C. Fiegna;M. Manfredi

  58
  Citations

• Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

  S. Stoffels;B. Bakeroot;T. L. Wu;D. Marcon

  57
  Citations

• Modeling of high-energy electrons in MOS devices at the microscopic level

  C. Fiegna;E. Sangiorgi

  56
  Citations

• Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation☆

  Simone Eminente;Marco Alessandrini;Claudio Fiegna

  55
  Citations