World's Best Scientists 2026 revealed!
Ali A. Orouji

Ali A. Orouji

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
4718
World Ranking
5606
National Ranking
44

Ali A. Orouji publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ali A. Orouji sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 293 publications — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Ali A. Orouji D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ali A. Orouji sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 35 D-Index — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Ali A. Orouji is affiliated with Semnan University in Iran. Their research is primarily focused in the fields of engineering and materials science, with a notable emphasis on subfields such as electrical and electronic engineering, materials chemistry, atomic and molecular physics and optics, biomedical engineering, and electronic, optical and magnetic materials.

The scientist's main areas of study include advancements in semiconductor devices and circuit design, semiconductor materials and devices, silicon carbide semiconductor technologies, quantum dots synthesis and properties, chalcogenide semiconductor thin films, Ga2O3 and related materials, and semiconductor materials and interfaces.

Recent publications contributed by or associated with Ali A. Orouji include:

  • Towards high efficiency Cd-Free Sb2Se3 solar cells by the band alignment optimization (2020) in Solar Energy Materials and Solar Cells
  • Efficient Sb2(S,Se)3/Zn(O,S) solar cells with high open-circuit voltage by controlling sulfur content in the absorber-buffer layers (2021) in Solar Energy
  • Alternative buffer layers in Sb2Se3 thin-film solar cells to reduce open-circuit voltage offset (2020) in Solar Energy
  • Dual-band terahertz absorber based on graphene periodic arrays of disks and ribbons: circuit model approach (2020) in Journal of Computational Electronics
  • Energy-aware routing considering load balancing for SDN: a minimum graph-based Ant Colony Optimization (2021) in Cluster Computing

Frequent publication venues for their work include:

  • Silicon
  • Optical and Quantum Electronics
  • Journal of Materials Science Materials in Electronics
  • Journal of Computational Electronics
  • The European Physical Journal Plus

Ali A. Orouji frequently collaborates with other researchers, including Abdollah Abbasi, Dariush Madadi, Iman Gharibshahian, Samaneh Sharbati, and Mohammad Danaie.

Best Publications

  • New dual-material SG nanoscale MOSFET: analytical threshold-voltage model

    M.J. Kumar;A.A. Orouji;H. Dhakad

  • Towards high efficiency Cd-Free Sb2Se3 solar cells by the band alignment optimization

    Iman Gharibshahian;Ali A. Orouji;Samaneh Sharbati;Samaneh Sharbati

  • Two-dimensional analytical threshold voltage model of nanoscale fully depleted SOI MOSFET with electrically induced S/D extensions

    M.J. Kumar;A.A. Orouji

  • A Wideband and Reconfigurable Filtering Slot Antenna

    Mohammad M. Fakharian;Pejman Rezaei;Ali A. Orouji;Meysam Soltanpur

  • Design of all-optical XOR and XNOR logic gates based on Fano resonance in plasmonic ring resonators

    Marziyeh Moradi;Mohammad Danaie;Ali Asghar Orouji

  • Nanoscale Triple Material Double Gate (TM-DG) MOSFET for Improving Short Channel Effects

    P. Razavi;A.A. Orouji

  • Leakage current reduction techniques in poly-Si TFTs for active matrix liquid crystal displays: a comprehensive study

    A.A. Orouji;M.J. Kumar

  • Reconfigurable multi-band, graphene-based THz absorber: Circuit Model Approach

    Toktam Aghaee;Ali A. Orouji

  • Efficient Sb2(S,Se)3/Zn(O,S) solar cells with high open-circuit voltage by controlling sulfur content in the absorber-buffer layers

    Iman Gharibshahian;Ali A. Orouji;Samaneh Sharbati

  • A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

    S E Jamali Mahabadi;Ali A Orouji;P Keshavarzi;Hamid Amini Moghadam

  • A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution

    Amirhossein Aminbeidokhti;Ali A. Orouji;Soude Rahmaninezhad;Masoomeh Ghasemian

  • Design and analysis of an optical full-adder based on nonlinear photonic crystal ring resonators

    Marziyeh Moradi;Mohammad Danaie;Ali Asghar Orouji

  • Designing of AlxGa1-xAs/CIGS tandem solar cell by analytical model

    Samaneh Sharbati;Iman Gharibshahian;Ali A. Orouji

  • Alternative buffer layers in Sb2Se3 thin-film solar cells to reduce open-circuit voltage offset

    Iman Gharibshahian;Ali A. Orouji;Samaneh Sharbati

  • Reconfigurable Multiband Extended U-Slot Antenna with Switchable Polarization for Wireless Applications

    Mohammad Fakharian;Pejman Rezaei;Ali Orouji

  • A New Partial-SOI LDMOSFET With Modified Electric Field for Breakdown Voltage Improvement

    A.A. Orouji;S. Sharbati;M. Fathipour

  • Modelling the spice parameters of SOI MOSFET using a combinational algorithm

    Moein Sarvaghad-Moghaddam;Ali A. Orouji;Zeinab Ramezani;Mohamed Elhoseny

  • Partially Cylindrical Fin Field-Effect Transistor: A Novel Device for Nanoscale Applications

    Mahsa Mehrad;Ali A Orouji

  • Proper Electrostatic Modulation of Electric Field in a Reliable Nano-SOI With a Developed Channel

    Mohammad Kazem Anvarifard;Ali Asghar Orouji

  • Circuit modeling of ultra‐broadband terahertz absorber based on graphene array periodic disks

    Toktam Aghaee;Ali A. Orouji

  • A novel 4H–SiC MESFET with modified channel depletion region for high power and high frequency applications

    Amirhossein Aminbeidokhti;Ali A. Orouji

  • The Best Control of Parasitic BJT Effect in SOI-LDMOS With SiGe Window Under Channel

    A. A. Orouji;M. Mehrad

Frequent Co-Authors

Pejman Rezaei
Pejman Rezaei Semnan University
Mamidala Jagadesh Kumar
Mamidala Jagadesh Kumar Indian Institute of Technology Delhi
Tayeb A. Denidni
Tayeb A. Denidni Institut National de la Recherche Scientifique
Mohamed Elhoseny
Mohamed Elhoseny University of Sharjah

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