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Ali A. Orouji

Ali A. Orouji

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
4718
World Ranking
5606
National Ranking
44

Overview

Ali A. Orouji is affiliated with Semnan University in Iran. Their research is primarily focused in the fields of engineering and materials science, with a notable emphasis on subfields such as electrical and electronic engineering, materials chemistry, atomic and molecular physics and optics, biomedical engineering, and electronic, optical and magnetic materials.

The scientist's main areas of study include advancements in semiconductor devices and circuit design, semiconductor materials and devices, silicon carbide semiconductor technologies, quantum dots synthesis and properties, chalcogenide semiconductor thin films, Ga2O3 and related materials, and semiconductor materials and interfaces.

Recent publications contributed by or associated with Ali A. Orouji include:

  • Towards high efficiency Cd-Free Sb2Se3 solar cells by the band alignment optimization (2020) in Solar Energy Materials and Solar Cells
  • Efficient Sb2(S,Se)3/Zn(O,S) solar cells with high open-circuit voltage by controlling sulfur content in the absorber-buffer layers (2021) in Solar Energy
  • Alternative buffer layers in Sb2Se3 thin-film solar cells to reduce open-circuit voltage offset (2020) in Solar Energy
  • Dual-band terahertz absorber based on graphene periodic arrays of disks and ribbons: circuit model approach (2020) in Journal of Computational Electronics
  • Energy-aware routing considering load balancing for SDN: a minimum graph-based Ant Colony Optimization (2021) in Cluster Computing

Frequent publication venues for their work include:

  • Silicon
  • Optical and Quantum Electronics
  • Journal of Materials Science Materials in Electronics
  • Journal of Computational Electronics
  • The European Physical Journal Plus

Ali A. Orouji frequently collaborates with other researchers, including Abdollah Abbasi, Dariush Madadi, Iman Gharibshahian, Samaneh Sharbati, and Mohammad Danaie.

Best Publications

  • New dual-material SG nanoscale MOSFET: analytical threshold-voltage model

    M.J. Kumar;A.A. Orouji;H. Dhakad

  • Towards high efficiency Cd-Free Sb2Se3 solar cells by the band alignment optimization

    Iman Gharibshahian;Ali A. Orouji;Samaneh Sharbati;Samaneh Sharbati

  • Two-dimensional analytical threshold voltage model of nanoscale fully depleted SOI MOSFET with electrically induced S/D extensions

    M.J. Kumar;A.A. Orouji

  • A Wideband and Reconfigurable Filtering Slot Antenna

    Mohammad M. Fakharian;Pejman Rezaei;Ali A. Orouji;Meysam Soltanpur

  • Design of all-optical XOR and XNOR logic gates based on Fano resonance in plasmonic ring resonators

    Marziyeh Moradi;Mohammad Danaie;Ali Asghar Orouji

  • Nanoscale Triple Material Double Gate (TM-DG) MOSFET for Improving Short Channel Effects

    P. Razavi;A.A. Orouji

  • Leakage current reduction techniques in poly-Si TFTs for active matrix liquid crystal displays: a comprehensive study

    A.A. Orouji;M.J. Kumar

  • Reconfigurable multi-band, graphene-based THz absorber: Circuit Model Approach

    Toktam Aghaee;Ali A. Orouji

  • Efficient Sb2(S,Se)3/Zn(O,S) solar cells with high open-circuit voltage by controlling sulfur content in the absorber-buffer layers

    Iman Gharibshahian;Ali A. Orouji;Samaneh Sharbati

  • A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

    S E Jamali Mahabadi;Ali A Orouji;P Keshavarzi;Hamid Amini Moghadam

  • A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution

    Amirhossein Aminbeidokhti;Ali A. Orouji;Soude Rahmaninezhad;Masoomeh Ghasemian

  • Design and analysis of an optical full-adder based on nonlinear photonic crystal ring resonators

    Marziyeh Moradi;Mohammad Danaie;Ali Asghar Orouji

  • Designing of AlxGa1-xAs/CIGS tandem solar cell by analytical model

    Samaneh Sharbati;Iman Gharibshahian;Ali A. Orouji

  • Alternative buffer layers in Sb2Se3 thin-film solar cells to reduce open-circuit voltage offset

    Iman Gharibshahian;Ali A. Orouji;Samaneh Sharbati

  • Reconfigurable Multiband Extended U-Slot Antenna with Switchable Polarization for Wireless Applications

    Mohammad Fakharian;Pejman Rezaei;Ali Orouji

  • A New Partial-SOI LDMOSFET With Modified Electric Field for Breakdown Voltage Improvement

    A.A. Orouji;S. Sharbati;M. Fathipour

  • Modelling the spice parameters of SOI MOSFET using a combinational algorithm

    Moein Sarvaghad-Moghaddam;Ali A. Orouji;Zeinab Ramezani;Mohamed Elhoseny

  • Partially Cylindrical Fin Field-Effect Transistor: A Novel Device for Nanoscale Applications

    Mahsa Mehrad;Ali A Orouji

  • Proper Electrostatic Modulation of Electric Field in a Reliable Nano-SOI With a Developed Channel

    Mohammad Kazem Anvarifard;Ali Asghar Orouji

  • Circuit modeling of ultra‐broadband terahertz absorber based on graphene array periodic disks

    Toktam Aghaee;Ali A. Orouji

  • A novel 4H–SiC MESFET with modified channel depletion region for high power and high frequency applications

    Amirhossein Aminbeidokhti;Ali A. Orouji

  • The Best Control of Parasitic BJT Effect in SOI-LDMOS With SiGe Window Under Channel

    A. A. Orouji;M. Mehrad

Frequent Co-Authors

Pejman Rezaei
Pejman Rezaei Semnan University
Mamidala Jagadesh Kumar
Mamidala Jagadesh Kumar Indian Institute of Technology Delhi
Tayeb A. Denidni
Tayeb A. Denidni Institut National de la Recherche Scientifique

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