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Electronics and Electrical Engineering

D-Index
41
Citations
5332
World Ranking
4365
National Ranking
50

Overview

Satyabrata Jit is affiliated with the Indian Institute of Technology BHU in India. Their research primarily focuses on engineering and materials science, contributing extensively to fields such as electrical and electronic engineering, materials chemistry, and biomedical engineering. The scientist's work spans several subfields including electronic, optical and magnetic materials, as well as polymers and plastics.

Their research interests include advancements in semiconductor devices and circuit design, semiconductor materials and devices, perovskite materials and applications, and ZnO doping and properties. Additionally, their work covers nanowire synthesis and applications, Ga2O3 and related materials, and conducting polymers and applications.

Significant frequent coauthors collaborating with Satyabrata Jit include:

  • Manas Ranjan Tripathy
  • Abhinav Pratap Singh
  • Kamalaksha Baral
  • Ashish Kumar Singh
  • Rishibrind Kumar Upadhyay

They have published in various scientific venues, notably with multiple contributions to:

  • IEEE Transactions on Electron Devices
  • IEEE Photonics Technology Letters
  • IEEE Transactions on Applied Superconductivity
  • IEEE Electron Device Letters
  • Silicon

Recent examples of their published research include:

  • "Device and Circuit-Level Assessment of GaSb/Si Heterojunction Vertical Tunnel-FET for Low-Power Applications" (2020) in IEEE Transactions on Electron Devices
  • "CuO Nanowire-Based Extended-Gate Field-Effect-Transistor (FET) for pH Sensing and Enzyme-Free/Receptor-Free Glucose Sensing Applications" (2020) in IEEE Sensors Journal
  • "III-V/Si staggered heterojunction based source-pocket engineered vertical TFETs for low power applications" (2020) in Superlattices and Microstructures
  • "Fibrous Al-Doped ZnO Thin Film Ultraviolet Photodetectors With Improved Responsivity and Speed" (2020) in IEEE Photonics Technology Letters
  • "Impact of interface trap charges on electrical performance characteristics of a source pocket engineered Ge/Si heterojunction vertical TFET with HfO2/Al2O3 laterally stacked gate oxide" (2021) in Microelectronics Reliability

Best Publications

  • Coverage and Connectivity in WSNs: A Survey, Research Issues and Challenges

    Abhishek Tripathi;Hari Prabhat Gupta;Tanima Dutta;Rahul Mishra

  • 2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO 2 /HfO 2 Stacked Gate-Oxide Structure

    Sanjay Kumar;Ekta Goel;Kunal Singh;Balraj Singh

  • A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO 2 /High- $k$ Stacked Gate-Oxide Structure

    Sanjay Kumar;Ekta Goel;Kunal Singh;Balraj Singh

  • Device and Circuit-Level Assessment of GaSb/Si Heterojunction Vertical Tunnel-FET for Low-Power Applications

    Manas Ranjan Tripathy;Ashish Kumar Singh;A. Samad;Sweta Chander

  • 2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs

    Ekta Goel;Sanjay Kumar;Kunal Singh;Balraj Singh

  • A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile

    Pramod Kumar Tiwari;Surendra Kumar;Samarth Mittal;Vaibhav Srivastava

  • Analytical Modeling of Channel Potential and Threshold Voltage of Double-Gate Junctionless FETs With a Vertical Gaussian-Like Doping Profile

    Balraj Singh;Deepti Gola;Kunal Singh;Ekta Goel

  • Temperature analysis of Ge/Si heterojunction SOI-Tunnel FET

    Unknown

  • A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors

    Pramod Kumar Tiwari;Sarvesh Dubey;Manjeet Singh;S. Jit

  • CuO Nanowire-Based Extended-Gate Field-Effect-Transistor (FET) for pH Sensing and Enzyme-Free/Receptor-Free Glucose Sensing Applications

    Ashwini Kumar Mishra;Deepak Kumar Jarwal;Bratindranath Mukherjee;Amit Kumar

  • Ultraviolet Photodetection Properties of ZnO/Si Heterojunction Diodes Fabricated by ALD Technique Without Using a Buffer Layer

    Purnima Hazra;S.K. Singh;S. Jit

  • Ultraviolet Detection Properties of p-Si/n-TiO 2 Heterojunction Photodiodes Grown by Electron-Beam Evaporation and Sol–Gel Methods: A Comparative Study

    Gopal Rawat;Divya Somvanshi;Hemant Kumar;Yogesh Kumar

  • 2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO 2 /HfO 2 Stacked Gate-Oxide Structure

    Sanjay Kumar;Kunal Singh;Sweta Chander;Ekta Goel

  • Effects of Electrostatically Doped Source/Drain and Ferroelectric Gate Oxide on Subthreshold Swing and Impact Ionization Rate of Strained-Si-on-Insulator Tunnel Field-Effect Transistors

    Mirgender Kumar;Satyabrata Jit

  • Mean Barrier Height and Richardson Constant for Pd/ZnO Thin Film-Based Schottky Diodes Grown on n-Si Substrates by Thermal Evaporation Method

    Divya Somvanshi;Satyabrata Jit

  • A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical Gaussian-like doping profile

    Sarvesh Dubey;Pramod Kumar Tiwari;S. Jit

  • III-V/Si staggered heterojunction based source-pocket engineered vertical TFETs for low power applications

    Manas Ranjan Tripathy;Ashish Kumar Singh;Kamalaksha Baral;Prince Kumar Singh

  • Sol-Gel-Based Highly Sensitive Pd/n-ZnO Thin Film/n-Si Schottky Ultraviolet Photodiodes

    Aniruddh Bahadur Yadav;Amritanshu Pandey;Divya Somvanshi;Satyabrata Jit

  • A new 2-D model for the potential distribution and threshold voltage of fully depleted short-channel Si-SOI MESFETs

    P. Pandey;B.B. Pal;S. Jit

  • Electrical and ammonia gas sensing properties of poly (3, 3‴- dialkylquaterthiophene) based organic thin film transistors fabricated by floating-film transfer method

    Chandan Kumar;Gopal Rawat;Hemant Kumar;Yogesh Kumar

  • Superficial fabrication of gold nanoparticles modified CuO nanowires electrode for non-enzymatic glucose detection

    Ashwini Kumar Mishra;Bratindranath Mukherjee;Amit Kumar;Deepak Kumar Jarwal

  • Colloidal ZnO Quantum Dots Based Spectrum Selective Ultraviolet Photodetectors

    Yogesh Kumar;Hemant Kumar;Gopal Rawat;Chandan Kumar

  • Analysis of Temperature-Dependent Electrical Characteristics of n-ZnO Nanowires (NWs)/p-Si Heterojunction Diodes

    Divya Somvanshi;S. Jit

Frequent Co-Authors

H. C. Liu
H. C. Liu Shanghai Jiao Tong University
Anchal Srivastava
Anchal Srivastava Banaras Hindu University
Margaret Buchanan
Margaret Buchanan National Research Council Canada
Suraj P. Khanna
Suraj P. Khanna National Physical Laboratory
Andreas Stintz
Andreas Stintz University of New Mexico
Sanjay Krishna
Sanjay Krishna The Ohio State University
Edmund H. Linfield
Edmund H. Linfield University of Leeds
Shun-Wei Liu
Shun-Wei Liu Ming Chi University of Technology

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