World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
41
Citations
5332
World Ranking
4365
National Ranking
50

Satyabrata Jit publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Satyabrata Jit sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 311 publications — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Satyabrata Jit D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Satyabrata Jit sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 41 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Satyabrata Jit is affiliated with the Indian Institute of Technology BHU in India. Their research primarily focuses on engineering and materials science, contributing extensively to fields such as electrical and electronic engineering, materials chemistry, and biomedical engineering. The scientist's work spans several subfields including electronic, optical and magnetic materials, as well as polymers and plastics.

Their research interests include advancements in semiconductor devices and circuit design, semiconductor materials and devices, perovskite materials and applications, and ZnO doping and properties. Additionally, their work covers nanowire synthesis and applications, Ga2O3 and related materials, and conducting polymers and applications.

Significant frequent coauthors collaborating with Satyabrata Jit include:

  • Manas Ranjan Tripathy
  • Abhinav Pratap Singh
  • Kamalaksha Baral
  • Ashish Kumar Singh
  • Rishibrind Kumar Upadhyay

They have published in various scientific venues, notably with multiple contributions to:

  • IEEE Transactions on Electron Devices
  • IEEE Photonics Technology Letters
  • IEEE Transactions on Applied Superconductivity
  • IEEE Electron Device Letters
  • Silicon

Recent examples of their published research include:

  • "Device and Circuit-Level Assessment of GaSb/Si Heterojunction Vertical Tunnel-FET for Low-Power Applications" (2020) in IEEE Transactions on Electron Devices
  • "CuO Nanowire-Based Extended-Gate Field-Effect-Transistor (FET) for pH Sensing and Enzyme-Free/Receptor-Free Glucose Sensing Applications" (2020) in IEEE Sensors Journal
  • "III-V/Si staggered heterojunction based source-pocket engineered vertical TFETs for low power applications" (2020) in Superlattices and Microstructures
  • "Fibrous Al-Doped ZnO Thin Film Ultraviolet Photodetectors With Improved Responsivity and Speed" (2020) in IEEE Photonics Technology Letters
  • "Impact of interface trap charges on electrical performance characteristics of a source pocket engineered Ge/Si heterojunction vertical TFET with HfO2/Al2O3 laterally stacked gate oxide" (2021) in Microelectronics Reliability

Best Publications

  • Coverage and Connectivity in WSNs: A Survey, Research Issues and Challenges

    Abhishek Tripathi;Hari Prabhat Gupta;Tanima Dutta;Rahul Mishra

  • 2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO 2 /HfO 2 Stacked Gate-Oxide Structure

    Sanjay Kumar;Ekta Goel;Kunal Singh;Balraj Singh

  • A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO 2 /High- $k$ Stacked Gate-Oxide Structure

    Sanjay Kumar;Ekta Goel;Kunal Singh;Balraj Singh

  • Device and Circuit-Level Assessment of GaSb/Si Heterojunction Vertical Tunnel-FET for Low-Power Applications

    Manas Ranjan Tripathy;Ashish Kumar Singh;A. Samad;Sweta Chander

  • 2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs

    Ekta Goel;Sanjay Kumar;Kunal Singh;Balraj Singh

  • A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile

    Pramod Kumar Tiwari;Surendra Kumar;Samarth Mittal;Vaibhav Srivastava

  • Analytical Modeling of Channel Potential and Threshold Voltage of Double-Gate Junctionless FETs With a Vertical Gaussian-Like Doping Profile

    Balraj Singh;Deepti Gola;Kunal Singh;Ekta Goel

  • Temperature analysis of Ge/Si heterojunction SOI-Tunnel FET

    Unknown

  • A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors

    Pramod Kumar Tiwari;Sarvesh Dubey;Manjeet Singh;S. Jit

  • CuO Nanowire-Based Extended-Gate Field-Effect-Transistor (FET) for pH Sensing and Enzyme-Free/Receptor-Free Glucose Sensing Applications

    Ashwini Kumar Mishra;Deepak Kumar Jarwal;Bratindranath Mukherjee;Amit Kumar

  • Ultraviolet Photodetection Properties of ZnO/Si Heterojunction Diodes Fabricated by ALD Technique Without Using a Buffer Layer

    Purnima Hazra;S.K. Singh;S. Jit

  • Ultraviolet Detection Properties of p-Si/n-TiO 2 Heterojunction Photodiodes Grown by Electron-Beam Evaporation and Sol–Gel Methods: A Comparative Study

    Gopal Rawat;Divya Somvanshi;Hemant Kumar;Yogesh Kumar

  • 2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO 2 /HfO 2 Stacked Gate-Oxide Structure

    Sanjay Kumar;Kunal Singh;Sweta Chander;Ekta Goel

  • Effects of Electrostatically Doped Source/Drain and Ferroelectric Gate Oxide on Subthreshold Swing and Impact Ionization Rate of Strained-Si-on-Insulator Tunnel Field-Effect Transistors

    Mirgender Kumar;Satyabrata Jit

  • Mean Barrier Height and Richardson Constant for Pd/ZnO Thin Film-Based Schottky Diodes Grown on n-Si Substrates by Thermal Evaporation Method

    Divya Somvanshi;Satyabrata Jit

  • A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical Gaussian-like doping profile

    Sarvesh Dubey;Pramod Kumar Tiwari;S. Jit

  • III-V/Si staggered heterojunction based source-pocket engineered vertical TFETs for low power applications

    Manas Ranjan Tripathy;Ashish Kumar Singh;Kamalaksha Baral;Prince Kumar Singh

  • Sol-Gel-Based Highly Sensitive Pd/n-ZnO Thin Film/n-Si Schottky Ultraviolet Photodiodes

    Aniruddh Bahadur Yadav;Amritanshu Pandey;Divya Somvanshi;Satyabrata Jit

  • A new 2-D model for the potential distribution and threshold voltage of fully depleted short-channel Si-SOI MESFETs

    P. Pandey;B.B. Pal;S. Jit

  • Electrical and ammonia gas sensing properties of poly (3, 3‴- dialkylquaterthiophene) based organic thin film transistors fabricated by floating-film transfer method

    Chandan Kumar;Gopal Rawat;Hemant Kumar;Yogesh Kumar

  • Superficial fabrication of gold nanoparticles modified CuO nanowires electrode for non-enzymatic glucose detection

    Ashwini Kumar Mishra;Bratindranath Mukherjee;Amit Kumar;Deepak Kumar Jarwal

  • Colloidal ZnO Quantum Dots Based Spectrum Selective Ultraviolet Photodetectors

    Yogesh Kumar;Hemant Kumar;Gopal Rawat;Chandan Kumar

  • Analysis of Temperature-Dependent Electrical Characteristics of n-ZnO Nanowires (NWs)/p-Si Heterojunction Diodes

    Divya Somvanshi;S. Jit

Frequent Co-Authors

Rajiv Prakash
Rajiv Prakash Indian Institute of Technology BHU
Ravi Shankar
Ravi Shankar Indian Institute of Technology Delhi
Shun-Wei Liu
Shun-Wei Liu Ming Chi University of Technology
Edmund H. Linfield
Edmund H. Linfield University of Leeds
Sanjay Krishna
Sanjay Krishna The Ohio State University
Andreas Stintz
Andreas Stintz University of New Mexico
Suraj P. Khanna
Suraj P. Khanna National Physical Laboratory
Margaret Buchanan
Margaret Buchanan National Research Council Canada
Anchal Srivastava
Anchal Srivastava Banaras Hindu University
H. C. Liu
H. C. Liu Shanghai Jiao Tong University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For those interested in Electronics and Electrical Engineering, exploring flexible online education options is crucial. Many institutions cater to diverse needs, including military families. Programs recognized among the best online colleges for military spouses offer supportive environments with tailored resources to help balance studies and personal commitments.

Additionally, students benefit from schools that feature online schools with multiple start dates, allowing for greater flexibility in enrollment and course progress. This makes it easier to embark on a degree journey without waiting for traditional semester timelines.

For those seeking faster pathways, 6-month certificate programs that pay well can provide valuable credentials in specialized electrical and electronics fields, often leading to quicker employment opportunities.

Moreover, the sector offers various roles well-suited to different personality types. Many high paying careers for introverts exist within engineering and technical disciplines, making this a promising field for those who prefer focused, independent work environments.

Best Scientists Citing Satyabrata Jit

Trending Scientists

Recently Published Articles