The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Suraj P. Khanna sits on this spectrum.
This scientist: 201 publications — 30th percentile
30% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Suraj P. Khanna sits on this spectrum.
This scientist: 32 D-Index — 10th percentile
10% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Suraj P. Khanna is affiliated with the National Physical Laboratory in the United Kingdom and has contributed extensively to the fields of Materials Science and Engineering. Their research primarily focuses on Electrical and Electronic Engineering and Materials Chemistry, with significant involvement in subfields such as Electronic, Optical and Magnetic Materials, Cellular and Molecular Neuroscience, and Polymers and Plastics.
The main topics addressed in Khanna's research include ZnO doping and properties, Advanced Memory and Neural Computing, Copper-based nanomaterials and applications, Ga2O3 and related materials, Photoreceptor and optogenetics research, Advanced Electrical Measurement Techniques, and Gas Sensing Nanomaterials and Sensors.
The scientist has published multiple papers, several of which are collaborative efforts. Notable publications include:
The scientist publishes regularly in venues such as IEEE Transactions on Electron Devices, Journal of Alloys and Compounds, Journal of Materials Science Materials in Electronics, Journal of Electronic Materials, and IEEE Transactions on Magnetics.
Frequent collaborators include C. K. Suman, Ritu Srivastava, Ankur Singh Rana, Satish Singh, and Riya Malik. These partnerships have contributed to advances in ZnO doping, optoelectrical properties, and memory device responses.
Y. Chassagneux;R. Colombelli;W. Maineult;S. Barbieri
Nanfang Yu;Qi Jie Wang;Qi Jie Wang;Mikhail A. Kats;Jonathan A. Fan
Mikhail A. Belkin;Jonathan A. Fan;Sahand Hormoz;Federico Capasso
Stefano Barbieri;Marco Ravaro;Pierre Gellie;Giorgio Santarelli
P Dean;A Valavanis;J Keeley;K Bertling
Paul Dean;Yah Leng Lim;Alex Valavanis;Russell Kliese
Gangyi Xu;Raffaele Colombelli;Suraj P. Khanna;Ali Belarouci
M.A. Belkin;Qi Jie Wang;C. Pflugl;A. Belyanin
Jonathan A. Fan;Mikhail A. Belkin;Federico Capasso;Suraj Khanna
Pierre Gellie;Stefano Barbieri;Jean-François Lampin;Pascal Filloux
Aleksandar D Rakić;Thomas Taimre;Karl Bertling;Yah Leng Lim
Nisha Prakash;Manjri Singh;Gaurav Kumar;Arun Barvat
Yah Leng Lim;Paul Dean;Milan Nikolić;Russell Kliese
Nathan Jukam;Sukhdeep S. Dhillon;Dimitri Oustinov;Julien Madeo
Yan-Feng Lao;A. G. Unil Perera;L. H. Li;S. P. Khanna
Jonathan A. Fan;Mikhail A. Belkin;Federico Capasso;Suraj P. Khanna
Y. Chassagneux;Q. J. Wang;S. P. Khanna;E. Strupiechonski
M. Ravaro;C. Manquest;C. Sirtori;S. Barbieri
Marco Ravaro;Stefano Barbieri;Giorgio Santarelli;Vishal Jagtap
Paul Dean;Muhammad U. Shaukat;Suraj P. Khanna;Subhasish Chakraborty
N. Jukam;S. Dhillon;D. Oustinov;J. Madeo
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