World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
42
Citations
6344
World Ranking
4151
National Ranking
193

Margaret Buchanan publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Margaret Buchanan sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 273 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Margaret Buchanan D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Margaret Buchanan sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 42 D-Index — 42nd percentile

42% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Margaret Buchanan is affiliated with the National Research Council Canada in Canada. Their professional work is situated within this national research institution.

There is no available data on recent papers, co-authors, publication venues, book publications, main fields or subfields of study, or main topics related to their research. Additionally, there is no information on awards or distinctions received by this individual.

Given the limited publicly available information, details on Margaret Buchanan's specific research areas, contributions to academic literature, and collaborative network cannot be further detailed.

Best Publications

  • Phase-controlled currents in semiconductors.

    E. Dupont;P. B. Corkum;H. C. Liu;M. Buchanan

  • Negative capacitance effect in semiconductor devices

    M. Ershov;H.C. Liu;L. Li;M. Buchanan

  • Resonant tunneling in Si/Si1−xGex double‐barrier structures

    H. C. Liu;D. Landheer;M. Buchanan;D. C. Houghton

  • How good is the polarization selection rule for intersubband transitions

    H. C. Liu;M. Buchanan;Z. R. Wasilewski

  • Photonic integrated circuits fabricated using ion implantation

    S. Charbonneau;E.S. Koteles;P.J. Poole;J.J. He

  • Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectors

    H. C. Liu;Z. R. Wasilewski;M. Buchanan;Hanyou Chu

  • Multicolor voltage tunable quantum well infrared photodetector

    H.C. Liu;Jianmeng Li;J.R. Thompson;Z.R. Wasilewski

  • Integrated quantum well intersub-band photodetector and light emitting diode

    H.C. Liu;J. Li;Z.R. Wasilewski;M. Buchanan

  • Negative capacitance of GaAs homojunction far-infrared detectors

    A. G. U. Perera;W. Z. Shen;M. Ershov;H. C. Liu

  • Dark current in quantum well infrared photodetectors

    H. C. Liu;A. G. Steele;M. Buchanan;Z. R. Wasilewski

  • Effect of doping concentration on the performance of terahertz quantum-cascade lasers

    H. C. Liu;M. Wächter;D. Ban;Z. R. Wasilewski

  • Unusual capacitance behavior of quantum well infrared photodetectors

    M. Ershov;H. C. Liu;L. Li;M. Buchanan

  • Quantum-well intermixing for optoelectronic integration using high energy ion implantation

    S. Charbonneau;P. J. Poole;P. G. Piva;G. C. Aers

  • High-frequency quantum-well infrared photodetectors measured by microwave-rectification technique

    H.C. Liu;Jianmeng Li;M. Buchanan;Z.R. Wasilewski

  • NIR, MWIR and LWIR quantum well infrared photodetector using interband and intersubband transitions

    Fabio Durante P. Alves;G. Karunasiri;N. Hanson;M. Byloos

  • High absorption (>90%) quantum-well infrared photodetectors

    H. C. Liu;R. Dudek;A. Shen;E. Dupont

  • Effect of circuit oscillations on the dc current-voltage characteristics of double barrier resonant tunneling structures

    Jeff F. Young;B. M. Wood;H. C. Liu;M. Buchanan

  • Defect diffusion in ion implanted AlGaAs and InP: Consequences for quantum well intermixing

    P. J. Poole;S. Charbonneau;G. C. Aers;T. E. Jackman

  • PHOTOCONDUCTIVITY NONLINEARITY AT HIGH EXCITATION POWER IN QUANTUM WELL INFRARED PHOTODETECTORS

    M. Ershov;H. C. Liu;M. Buchanan;Z. R. Wasilewski

  • Electroluminescence and photoluminescence from Si1−xGex alloys

    N. L. Rowell;J.‐P. Noël;D. C. Houghton;M. Buchanan

Frequent Co-Authors

H. C. Liu
H. C. Liu Shanghai Jiao Tong University
Z. R. Wasilewski
Z. R. Wasilewski University of Waterloo
Philip J. Poole
Philip J. Poole National Research Council Canada
William J. Schaff
William J. Schaff Cornell University
Dayan Ban
Dayan Ban University of Waterloo
Lianhe Li
Lianhe Li University of Leeds
Wenzhong Shen
Wenzhong Shen Shanghai Jiao Tong University
Siegfried Janz
Siegfried Janz National Research Council Canada
Sanjay Krishna
Sanjay Krishna The Ohio State University
Andreas Stintz
Andreas Stintz University of New Mexico

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