The scientist’s investigation covers issues in Optoelectronics, Quantum well, Photodetector, Optics and Quantum well infrared photodetector. Her work in Optoelectronics covers topics such as Laser which are related to areas like Ion implantation. Margaret Buchanan combines subjects such as Molecular beam epitaxy, Substrate and Condensed matter physics with her study of Quantum well.
Her Photodetector study combines topics in areas such as Polarization, Doping and Gallium arsenide. Infrared, Wavelength and Detector are the core of her Optics study. As a part of the same scientific study, Margaret Buchanan usually deals with the Quantum well infrared photodetector, concentrating on Voltage and frequently concerns with Electronic circuit, Tunnel effect and Mathematical model.
Optoelectronics, Quantum well, Optics, Photodetector and Quantum well infrared photodetector are her primary areas of study. Her Optoelectronics research incorporates themes from Infrared and Detector. Her Quantum well research integrates issues from Ion implantation, Condensed matter physics, Semiconductor and Photoluminescence.
Her work on Wafer expands to the thematically related Optics. Margaret Buchanan usually deals with Photodetector and limits it to topics linked to Doping and Silicon. Her Quantum well infrared photodetector research incorporates elements of Polarization, Dark current and Electric field.
Her main research concerns Optoelectronics, Optics, Photodetector, Quantum well and Heterojunction. Her research in Optoelectronics intersects with topics in Quantum well infrared photodetector, Infrared and Detector. As part of her studies on Optics, Margaret Buchanan often connects relevant subjects like Wafer.
Her Photodetector research incorporates themes from Near-infrared spectroscopy, Particle detector, Bolometer and Infrared detector. Within one scientific family, Margaret Buchanan focuses on topics pertaining to Quantum dot under Quantum well, and may sometimes address concerns connected to Quantum tunnelling and Condensed matter physics. In her work, Band offset is strongly intertwined with Doping, which is a subfield of Heterojunction.
Margaret Buchanan mainly focuses on Optoelectronics, Photodetector, Optics, Infrared and Detector. Her studies in Responsivity, Heterojunction, Terahertz radiation, Free carrier absorption and Photoconductivity are all subfields of Optoelectronics research. Her Photodetector research includes themes of Quantum well infrared photodetector, Gallium arsenide and Quantum efficiency.
Her Quantum well infrared photodetector research includes elements of Fourier transform spectroscopy and Near-infrared spectroscopy. As part of one scientific family, Margaret Buchanan deals mainly with the area of Optics, narrowing it down to issues related to the Diode, and often Wafer bonding, Photodiode, Optical radiation, Photoresistor and Photon upconversion. Her Infrared research is multidisciplinary, relying on both Wavelength, Absorption and Bolometer.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Phase-controlled currents in semiconductors.
E. Dupont;P. B. Corkum;H. C. Liu;M. Buchanan.
Physical Review Letters (1995)
Negative capacitance effect in semiconductor devices
M. Ershov;H.C. Liu;L. Li;M. Buchanan.
IEEE Transactions on Electron Devices (1998)
Resonant tunneling in Si/Si1−xGex double‐barrier structures
H. C. Liu;D. Landheer;M. Buchanan;D. C. Houghton.
Applied Physics Letters (1988)
Photonic integrated circuits fabricated using ion implantation
S. Charbonneau;E.S. Koteles;P.J. Poole;J.J. He.
IEEE Journal of Selected Topics in Quantum Electronics (1998)
How good is the polarization selection rule for intersubband transitions
H. C. Liu;M. Buchanan;Z. R. Wasilewski.
Applied Physics Letters (1998)
Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectors
H. C. Liu;Z. R. Wasilewski;M. Buchanan;Hanyou Chu.
Applied Physics Letters (1993)
Determination of charge accumulation and its characteristic time in double-barrier resonant tunneling structures using steady-state photoluminescence.
Jeff F. Young;B. M. Wood;G. C. Aers;R. L. S. Devine.
Physical Review Letters (1988)
Multicolor voltage tunable quantum well infrared photodetector
H.C. Liu;Jianmeng Li;J.R. Thompson;Z.R. Wasilewski.
device research conference (1993)
Integrated quantum well intersub-band photodetector and light emitting diode
H.C. Liu;J. Li;Z.R. Wasilewski;M. Buchanan.
Electronics Letters (1995)
Negative capacitance of GaAs homojunction far-infrared detectors
A. G. U. Perera;W. Z. Shen;M. Ershov;H. C. Liu.
Applied Physics Letters (1999)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:
Shanghai Jiao Tong University
University of Waterloo
National Research Council Canada
Cornell University
Shanghai Jiao Tong University
University of Leeds
National Research Council Canada
University of New Mexico
The Ohio State University
University of Leeds
Ludwig-Maximilians-Universität München
Imec
Virginia Tech
University of Sydney
Michigan State University
Saint Louis University
Goddard Space Flight Center
University of Copenhagen
University of California, San Diego
Tohoku University
University of Geneva
University of Wisconsin–Madison
Vanderbilt University
University at Albany, State University of New York
University of Colorado Anschutz Medical Campus
Field Museum of Natural History