World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
50
Citations
7775
World Ranking
2861
National Ranking
91

Lan Fu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Lan Fu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 284 publications — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Lan Fu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Lan Fu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 50 D-Index — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Lan Fu is affiliated with the Australian National University in Australia and primarily works in the field of Engineering, with a focus on Electrical and Electronic Engineering, Biomedical Engineering, and Materials Chemistry. Their research covers subfields such as Atomic and Molecular Physics, and Optics, as well as Electronic, Optical and Magnetic Materials.

The scientist's research topics include:

  • Nanowire Synthesis and Applications
  • Photonic and Optical Devices
  • Semiconductor Quantum Structures and Devices
  • ZnO doping and properties
  • Advanced Semiconductor Detectors and Materials
  • Gas Sensing Nanomaterials and Sensors
  • Ga2O3 and related materials

Lan Fu has contributed to numerous recent papers, including:

  • "Bidirectional photocurrent in p-n heterojunction nanowires," published in 2021 in Nature Electronics
  • "An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics," published in 2023 in Nature Communications
  • "Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors," published in 2020 in Advanced Materials
  • "Three-dimensional cross-nanowire networks recover full terahertz state," published in 2020 in Science
  • "Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires," published in 2022 in Light Science & Applications

The scientist frequently publishes in venues such as:

  • arXiv (Cornell University)
  • Advanced Materials
  • Light Science & Applications
  • Nano Letters
  • Advanced Functional Materials

Lan Fu's frequent co-authors include Hark Hoe Tan, C. Jagadish, Ziyuan Li, Fanlu Zhang, and Zhe Li.

In addition to journal articles, Lan Fu has published books with Springer Science+Business Media, including two editions of "Micro and Nanoelectronics Devices, Circuits and Systems" released in 2022 and 2023.

Best Publications

  • Broadband Metamaterial Absorbers

    Peng Yu;Peng Yu;Lucas V. Besteiro;Lucas V. Besteiro;Yongjun Huang;Jiang Wu

  • Bidirectional photocurrent in p–n heterojunction nanowires

    Danhao Wang;Xin Liu;Yang Kang;Xiaoning Wang

  • Ultraporous Electron‐Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible‐Blind UV Photodetectors

    Noushin Nasiri;Renheng Bo;Fan Wang;Lan Fu

  • Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing.

    Qian Gao;Dhruv Saxena;Fan Wang;Lan Fu

  • Microstructure, optical, and electrical properties of p-type SnO thin films

    W. Guo;L. Fu;Y. Zhang;K. Zhang

  • Colossal Dielectric Permittivity in (Nb+Al) Codoped Rutile TiO2 Ceramics: Compositional Gradient and Local Structure

    Wanbiao Hu;Kenny Lau;Yun Liu;Ray L. Withers

  • Oxidation and phase transitions of epitaxial tin oxide thin films on (1̄012) sapphire

    X. Q. Pan;L. Fu

  • Water droplet motion control on superhydrophobic surfaces: exploiting the Wenzel-to-Cassie transition.

    Guangming Liu;Lan Fu;Andrei V. Rode;Vincent S. J. Craig

  • Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs

    J. Lloyd-Hughes;S. K. E. Merchant;L. Fu;H. H. Tan

  • Single Nanowire Photoconductive Terahertz Detectors

    Kun Peng;Patrick Parkinson;Lan Fu;Qiang Gao

  • Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires

    Unknown

  • Epitaxial SnO2 thin films grown on (1̄012) sapphire by femtosecond pulsed laser deposition

    J. E. Dominguez;X. Q. Pan;L. Fu;P. A. Van Rompay

  • Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors.

    Vaishnavi Krishnamurthi;Hareem Khan;Taimur Ahmed;Ali Zavabeti;Ali Zavabeti

  • Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors.

    Renjing Xu;Shuang Zhang;Fan Wang;Jiong Yang

  • Three-dimensional cross-nanowire networks recover full terahertz state

    Kun Peng;Dimitars Jevtics;Fanlu Zhang;Sabrina Sterzl

  • Room temperature GaAsSb single nanowire infrared photodetectors.

    Ziyuan Li;Xiaoming Yuan;Lan Fu;Kun Peng

  • Effect of crystal defects on the electrical properties in epitaxial tin dioxide thin films

    J. E. Dominguez;L. Fu;X. Q. Pan

  • III–V Semiconductor Single Nanowire Solar Cells: A Review

    Ziyuan Li;Hark Hoe Tan;Chennupati Jagadish;Lan Fu

  • Three-dimensional nano-heterojunction networks: a highly performing structure for fast visible-blind UV photodetectors

    Noushin Nasiri;Renheng Bo;Lan Fu;Antonio Tricoli

  • Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

    Tim Burgess;Dhruv Saxena;Sudha Mokkapati;Zhe Li

  • A Self‐Powered Portable Nanowire Array Gas Sensor for Dynamic NO2 Monitoring at Room Temperature

    Unknown

  • Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.

    Xiaoming Yuan;Philippe Caroff;Jennifer Wong-Leung;Lan Fu

  • Epitaxial nanocrystalline tin dioxide thin films grown on (0001) sapphire by femtosecond pulsed laser deposition

    J. E. Dominguez;L. Fu;X. Q. Pan

  • Ferroelectric-Driven Exciton and Trion Modulation in Monolayer Molybdenum and Tungsten Diselenides

    Bo Wen;Yi Zhu;Didit Yudistira;Andreas Boes

Frequent Co-Authors

Chennupati Jagadish
Chennupati Jagadish Australian National University
Hark Hoe Tan
Hark Hoe Tan Australian National University
Michael B. Johnston
Michael B. Johnston University of Oxford
Qiang Gao
Qiang Gao Beihang University
Yuerui Lu
Yuerui Lu Australian National University
Philippe Caroff
Philippe Caroff Microsoft (United States)
Hannah J. Joyce
Hannah J. Joyce University of Cambridge
Antonio Tricoli
Antonio Tricoli University of Sydney
Ying Chen
Ying Chen Deakin University
Zhiming Wang
Zhiming Wang University of Electronic Science and Technology of China

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