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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 70 4467 4321 73 69 342 16477

Anna Fontcuberta i Morral publications per year

The chart shows the history of publications by Anna Fontcuberta i Morral between 2000 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Anna Fontcuberta i Morral published across 26 years, from 2000 to 2025, averaging 14.5 papers a year. Output peaked at 30 publications in 2021. 23 of the 377 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 2000 to 2025. Vertical axis: number of publications, 0 to 30. Peak 30 publications in 2021. 2000: 3 publications 2001: 1 publication 2002: 8 publications 2003: 4 publications 2004: 4 publications 2005: 6 publications 2006: 5 publications 2007: 4 publications 2008: 14 publications 2009: 16 publications 2010: 18 publications 2011: 17 publications 2012: 17 publications 2013: 23 publications 2014: 21 publications 2015: 22 publications 2016: 21 publications 2017: 15 publications 2018: 21 publications 2019: 25 publications 2020: 22 publications 2021: 30 publications 2022: 26 publications 2023: 11 publications 2024: 12 publications 2025: 11 publications
2000 2025

377 publications in total across all disciplines

View publications per year as a table
Anna Fontcuberta i Morral: publications per year, 2000 to 2025
Year Publications
2000 3
2001 1
2002 8
2003 4
2004 4
2005 6
2006 5
2007 4
2008 14
2009 16
2010 18
2011 17
2012 17
2013 23
2014 21
2015 22
2016 21
2017 15
2018 21
2019 25
2020 22
2021 30
2022 26
2023 11
2024 12
2025 11
Total 377
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Anna Fontcuberta i Morral publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Anna Fontcuberta i Morral sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 330–349 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 342 publications — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477 342
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Anna Fontcuberta i Morral D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Anna Fontcuberta i Morral sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 70–71 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 70 D-Index — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378 70
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Anna Fontcuberta i Morral is affiliated with the École Polytechnique Fédérale de Lausanne in Switzerland. Their research spans several fields including Engineering and Materials Science, with a significant focus on Electrical and Electronic Engineering, Materials Chemistry, and Biomedical Engineering. Other notable subfields of study include Atomic and Molecular Physics, and Optics, as well as Electronic, Optical and Magnetic Materials.

Their work concentrates on key topics such as Nanowire Synthesis and Applications, Semiconductor Quantum Structures and Devices, Quantum Dots Synthesis and Properties, along with Advancements in Semiconductor Devices and Circuit Design. They have also focused on Semiconductor materials and devices, 2D Materials and Applications, and Chalcogenide Semiconductor Thin Films.

Among their recent publications are:

  • Doping challenges and pathways to industrial scalability of III-V nanowire arrays, 2021, Applied Physics Reviews
  • van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics, 2020, Crystal Growth & Design
  • Understanding the growth mechanism of BaZrS3 chalcogenide perovskite thin films from sulfurized oxide precursors, 2022, Journal of Physics Energy
  • Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon, 2021, Nano Letters
  • Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch, 2022, Nanotechnology

Frequent publication venues for Anna Fontcuberta i Morral include:

  • Zenodo (CERN European Organization for Nuclear Research)
  • arXiv (Cornell University)
  • Nanotechnology
  • Nano Letters
  • Nanoscale Advances

They have collaborated extensively with several researchers, frequently co-authoring papers with Simon Escobar Steinvall, Valerio Piazza, Jean-Baptiste Leran, Mirjana Dimitrievska, and Didem Dede.

Best Publications

  • Single-nanowire solar cells beyond the Shockley-Queisser limit

    Peter Krogstrup;Henrik Ingerslev Jørgensen;Martin Heiss;Oliver Demichel

  • Large-Area Epitaxial Monolayer MoS2

    Dumitru Dumcenco;Dmitry Ovchinnikov;Kolyo Marinov;Predrag Lazić

  • Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

    D. Spirkoska;J. Arbiol;Anders Gustafsson;S. Conesa-Boj

  • Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

    C. Colombo;D. Spirkoska;M. Frimmer;G. Abstreiter

  • Light generation and harvesting in a van der Waals heterostructure

    Oriol Lopez-Sanchez;Esther Alarcon Llado;Volodymyr Koman;Anna Fontcuberta i Morral

  • Self-assembled quantum dots in a nanowire system for quantum photonics

    M. Heiss;Y. Fontana;A. Gustafsson;G. Wüst

  • Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

    A. Fontcuberta i Morral;C. Colombo;G. Abstreiter;J. Arbiol

  • Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

    I. Zardo;S. Conesa-Boj;F. Peiro;J. R. Morante

  • Gallium arsenide p-i-n radial structures for photovoltaic applications

    C. Colombo;M. Heiβ;M. Grätzel;A. Fontcuberta i Morral

  • Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

    Martin Heiss;Martin Heiss;Sonia Conesa-Boj;Sonia Conesa-Boj;Jun Ren;Hsiang-Han Tseng

  • Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions.

    Lucas Güniat;Philippe Caroff;Anna Fontcuberta i Morral

  • Wafer bonding and layer transfer processes for 4-junction high efficiency solar cells

    J.M. Zahler;A. Fontcuberta i Morral;Chang-Geun Ahn;H.A. Atwater

  • Synthesis of Silicon Nanowires with Wurtzite Crystalline Structure by Using Standard Chemical Vapor Deposition

    A. Fontcuberta i Morral;J. Arbiol;J. D. Prades;A. Cirera

  • Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements

    A. Fontcuberta i Morral;P. Roca i Cabarrocas;C. Clerc

  • Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

    Maria de la Mata;Cesar Magen;Jaume Gazquez;Muhammad Iqbal Bakti Utama

  • Influence of Cu as a catalyst on the properties of silicon nanowires synthesized by the vapour?solid?solid mechanism

    Jordi Arbiol;Billel Kalache;Pere Roca i Cabarrocas;Joan Ramon Morante

  • Multi-junction solar cells and methods of making same using layer transfer and bonding techniques

    Harry A. Atwater;James Zahler;Anna Fontcuberta i Morral;Sean Olson

  • GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER

    James M. Zahler;Harry A. Atwater;Anna Fontcuberta I. Morral

  • Rational strain engineering in delafossite oxides for highly efficient hydrogen evolution catalysis in acidic media

    Filip Podjaski;Filip Podjaski;Daniel Weber;Daniel Weber;Siyuan Zhang;Leo Diehl;Leo Diehl

  • Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates

    Emanuele Uccelli;Jordi Arbiol;Cesar Magen;Peter Krogstrup

  • Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires.

    Anna Fontcuberta i Morral;Dance Spirkoska;Jordi Arbiol;Matthias Heigoldt

  • Direct-bonded GaAs /InGaAs tandem solar cell

    Katsuaki Tanabe;Anna Fontcuberta i Morral;Harry A. Atwater;Daniel J. Aiken

Frequent Co-Authors

Jordi Arbiol
Jordi Arbiol Catalan Institute of Nanoscience and Nanotechnology
Gerhard Abstreiter
Gerhard Abstreiter Technical University of Munich
Jesper Nygård
Jesper Nygård University of Copenhagen
Joan Ramon Morante
Joan Ramon Morante Catalonia Institute for Energy Research
Vladimir G. Dubrovskii
Vladimir G. Dubrovskii Saint Petersburg State University
Peter Krogstrup
Peter Krogstrup University of Copenhagen
Francesca Peiró
Francesca Peiró University of Barcelona
Philippe Caroff
Philippe Caroff Microsoft (United States)
Andras Kis
Andras Kis École Polytechnique Fédérale de Lausanne

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