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G. E. Cirlin

G. E. Cirlin

D-Index & Metrics

Materials Science

D-Index
41
Citations
7072
World Ranking
12696
National Ranking
43

Overview

G. E. Cirlin is affiliated with ITMO University in the Russian Federation and has contributed extensively to the fields of engineering, physics and astronomy, and materials science. Their research primarily focuses on topics such as nanowire synthesis and applications, GaN-based semiconductor devices and materials, semiconductor quantum structures and devices, Ga2O3 and related materials, semiconductor materials and interfaces, photonic and optical devices, and ZnO doping and properties.

Their recent research publications cover a range of subjects related to nanowires, semiconductor materials, and flexible electronics. Notable papers include:

  • Modified silicone rubber for fabrication and contacting of flexible suspended membranes of n-/p-GaP nanowires with a single-walled carbon nanotube transparent contact (2020) published in Journal of Materials Chemistry C
  • Resonant excitation of nanowire quantum dots (2020) published in npj Quantum Information
  • Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates (2021) published in Nanomaterials
  • Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane (2020) published in Nanomaterials
  • Wurtzite AlGaAs Nanowires (2020) published in Scientific Reports

Throughout their career, Cirlin has collaborated frequently with a number of coauthors, including:

  • R. R. Reznik
  • K. P. Kotlyar
  • Vladislav O. Gridchin
  • N. V. Kryzhanovskaya
  • I. V. Shtrom

Their work has been published in several prominent scientific venues, reflecting their active engagement in the research community. The most frequent venues include:

  • Journal of Physics Conference Series
  • Nanomaterials
  • Semiconductors
  • Technical Physics Letters
  • Nanotechnology

Cirlin's research contributions span various subfields such as biomedical engineering, atomic and molecular physics and optics, electrical and electronic engineering, condensed matter physics, and materials chemistry. This range of expertise supports their investigations into semiconductor technologies and nanowire-based device architectures.

Best Publications

  • Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

    V. G. Dubrovskii;G. E. Cirlin;I. P. Soshnikov;A. A. Tonkikh

  • Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

    G. E. Cirlin;G. E. Cirlin;V. G. Dubrovskii;V. G. Dubrovskii;Yu. B. Samsonenko;Yu. B. Samsonenko;A. D. Bouravleuv;A. D. Bouravleuv

  • Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy.

    V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;J. C. Harmand

  • Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

    V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;I. P. Soshnikov

  • Semiconductor nanowhiskers: Synthesis, properties, and applications

    V. G. Dubrovskii;G. E. Cirlin;V. M. Ustinov

  • Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis

    Maria Tchernycheva;Laurent Travers;Gilles Patriarche;Frank Glas

  • Growth and characterization of InP nanowires with InAsP insertions.

    Maria Tchernycheva;George E. Cirlin;Gilles Patriarche;Laurent Travers

  • New mode of vapor-liquid-solid nanowire growth.

    V. G. Dubrovskii;V. G. Dubrovskii;G. E. Cirlin;G. E. Cirlin;N. V. Sibirev;F. Jabeen

  • Kinetics of the initial stage of coherent island formation in heteroepitaxial systems

    V. G. Dubrovskii;G. E. Cirlin;V. M. Ustinov

  • Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates

    G. E. Cirlin;V. G. Dubrovskii;I. P. Soshnikov;N. V. Sibirev

  • Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy:structural and optical characterization

    M. Tchernycheva;M. Tchernycheva;C. Sartel;G. Cirlin;L. Travers

  • Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy.

    M Tchernycheva;J C Harmand;G Patriarche;L Travers

  • III-Vナノワイヤの形状修飾:側壁上の核形成の役割

    V G Dubrovskii;N V Sibirev;G E Cirlin;M Tchernycheva

  • Anapoles in Free-Standing III–V Nanodisks Enhancing Second-Harmonic Generation

    Maria Timofeeva;Lukas Lang;Flavia Timpu;Claude Renaut

  • Role of nonlinear effects in nanowire growth and crystal phase

    V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;G. E. Cirlin;A. D. Bouravleuv

  • Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111).

    L Largeau;D L Dheeraj;M Tchernycheva;G E Cirlin

  • Optical properties of InAs quantum dots in a Si matrix

    R Heitz;N.N Ledentsov;D Bimberg;A.Yu Egorov

  • GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature

    J.C. Harmand;M. Tchernycheva;G. Patriarche;L. Travers

  • Shape modification of III-V nanowires: the role of nucleation on sidewalls.

    V G Dubrovskii;N V Sibirev;G E Cirlin;G E Cirlin;M Tchernycheva

  • Optical properties of InAs quantum dots in a Si matrix

    R. Heitz;N. N. Ledentsov;D. Bimberg;A. Yu. Egorov

  • Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface

    G. E. Cirlin;G. M. Guryanov;A. O. Golubok;S. Ya. Tipissev

  • Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

    V.G. Talalaev;V.G. Talalaev;G.E. Cirlin;A.A. Tonkikh;N.D. Zakharov

Frequent Co-Authors

Vladimir G. Dubrovskii
Vladimir G. Dubrovskii Saint Petersburg State University
V. M. Ustinov
V. M. Ustinov Russian Academy of Sciences
Peter Werner
Peter Werner Max Planck Society
Maria Tchernycheva
Maria Tchernycheva University of Paris-Saclay
Jean-Christophe Harmand
Jean-Christophe Harmand University of Paris-Saclay
Harri Lipsanen
Harri Lipsanen Aalto University
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
A. E. Zhukov
A. E. Zhukov National Research University Higher School of Economics
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Nikolai N. Ledentsov
Nikolai N. Ledentsov VI Systems GmbH

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