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G. E. Cirlin

G. E. Cirlin

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 41 12692 12277 43 38 407 7072

G. E. Cirlin publications per year

The chart shows the history of publications by G. E. Cirlin between 1995 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. G. E. Cirlin published across 31 years, from 1995 to 2025, averaging 14.3 papers a year. Output peaked at 43 publications in 2018. 27 of the 442 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 1995 to 2025. Vertical axis: number of publications, 0 to 43. Peak 43 publications in 2018. 1995: 2 publications 1996: 2 publications 1997: 6 publications 1998: 6 publications 1999: 8 publications 2000: 7 publications 2001: 10 publications 2002: 12 publications 2003: 16 publications 2004: 13 publications 2005: 10 publications 2006: 21 publications 2007: 18 publications 2008: 14 publications 2009: 12 publications 2010: 11 publications 2011: 7 publications 2012: 11 publications 2013: 18 publications 2014: 8 publications 2015: 12 publications 2016: 27 publications 2017: 19 publications 2018: 43 publications 2019: 24 publications 2020: 29 publications 2021: 26 publications 2022: 16 publications 2023: 7 publications 2024: 21 publications 2025: 6 publications
1995 2025

442 publications in total across all disciplines

View publications per year as a table
G. E. Cirlin: publications per year, 1995 to 2025
Year Publications
1995 2
1996 2
1997 6
1998 6
1999 8
2000 7
2001 10
2002 12
2003 16
2004 13
2005 10
2006 21
2007 18
2008 14
2009 12
2010 11
2011 7
2012 11
2013 18
2014 8
2015 12
2016 27
2017 19
2018 43
2019 24
2020 29
2021 26
2022 16
2023 7
2024 21
2025 6
Total 442
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G. E. Cirlin publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where G. E. Cirlin sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 390–409 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 407 publications — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321 407
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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G. E. Cirlin D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where G. E. Cirlin sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 40–41 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 41 D-Index — 2nd percentile

2% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211 41
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

G. E. Cirlin is affiliated with ITMO University in the Russian Federation and has contributed extensively to the fields of engineering, physics and astronomy, and materials science. Their research primarily focuses on topics such as nanowire synthesis and applications, GaN-based semiconductor devices and materials, semiconductor quantum structures and devices, Ga2O3 and related materials, semiconductor materials and interfaces, photonic and optical devices, and ZnO doping and properties.

Their recent research publications cover a range of subjects related to nanowires, semiconductor materials, and flexible electronics. Notable papers include:

  • Modified silicone rubber for fabrication and contacting of flexible suspended membranes of n-/p-GaP nanowires with a single-walled carbon nanotube transparent contact (2020) published in Journal of Materials Chemistry C
  • Resonant excitation of nanowire quantum dots (2020) published in npj Quantum Information
  • Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates (2021) published in Nanomaterials
  • Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane (2020) published in Nanomaterials
  • Wurtzite AlGaAs Nanowires (2020) published in Scientific Reports

Throughout their career, Cirlin has collaborated frequently with a number of coauthors, including:

  • R. R. Reznik
  • K. P. Kotlyar
  • Vladislav O. Gridchin
  • N. V. Kryzhanovskaya
  • I. V. Shtrom

Their work has been published in several prominent scientific venues, reflecting their active engagement in the research community. The most frequent venues include:

  • Journal of Physics Conference Series
  • Nanomaterials
  • Semiconductors
  • Technical Physics Letters
  • Nanotechnology

Cirlin's research contributions span various subfields such as biomedical engineering, atomic and molecular physics and optics, electrical and electronic engineering, condensed matter physics, and materials chemistry. This range of expertise supports their investigations into semiconductor technologies and nanowire-based device architectures.

Best Publications

  • Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

    V. G. Dubrovskii;G. E. Cirlin;I. P. Soshnikov;A. A. Tonkikh

  • Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

    G. E. Cirlin;G. E. Cirlin;V. G. Dubrovskii;V. G. Dubrovskii;Yu. B. Samsonenko;Yu. B. Samsonenko;A. D. Bouravleuv;A. D. Bouravleuv

  • Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy.

    V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;J. C. Harmand

  • Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

    V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;I. P. Soshnikov

  • Semiconductor nanowhiskers: Synthesis, properties, and applications

    V. G. Dubrovskii;G. E. Cirlin;V. M. Ustinov

  • Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis

    Maria Tchernycheva;Laurent Travers;Gilles Patriarche;Frank Glas

  • Growth and characterization of InP nanowires with InAsP insertions.

    Maria Tchernycheva;George E. Cirlin;Gilles Patriarche;Laurent Travers

  • New mode of vapor-liquid-solid nanowire growth.

    V. G. Dubrovskii;V. G. Dubrovskii;G. E. Cirlin;G. E. Cirlin;N. V. Sibirev;F. Jabeen

  • Kinetics of the initial stage of coherent island formation in heteroepitaxial systems

    V. G. Dubrovskii;G. E. Cirlin;V. M. Ustinov

  • Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates

    G. E. Cirlin;V. G. Dubrovskii;I. P. Soshnikov;N. V. Sibirev

  • Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy:structural and optical characterization

    M. Tchernycheva;M. Tchernycheva;C. Sartel;G. Cirlin;L. Travers

  • Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy.

    M Tchernycheva;J C Harmand;G Patriarche;L Travers

  • III-Vナノワイヤの形状修飾:側壁上の核形成の役割

    V G Dubrovskii;N V Sibirev;G E Cirlin;M Tchernycheva

  • Anapoles in Free-Standing III–V Nanodisks Enhancing Second-Harmonic Generation

    Maria Timofeeva;Lukas Lang;Flavia Timpu;Claude Renaut

  • Role of nonlinear effects in nanowire growth and crystal phase

    V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;G. E. Cirlin;A. D. Bouravleuv

  • Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111).

    L Largeau;D L Dheeraj;M Tchernycheva;G E Cirlin

  • Optical properties of InAs quantum dots in a Si matrix

    R Heitz;N.N Ledentsov;D Bimberg;A.Yu Egorov

  • GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature

    J.C. Harmand;M. Tchernycheva;G. Patriarche;L. Travers

  • Shape modification of III-V nanowires: the role of nucleation on sidewalls.

    V G Dubrovskii;N V Sibirev;G E Cirlin;G E Cirlin;M Tchernycheva

  • Optical properties of InAs quantum dots in a Si matrix

    R. Heitz;N. N. Ledentsov;D. Bimberg;A. Yu. Egorov

  • Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface

    G. E. Cirlin;G. M. Guryanov;A. O. Golubok;S. Ya. Tipissev

  • Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

    V.G. Talalaev;V.G. Talalaev;G.E. Cirlin;A.A. Tonkikh;N.D. Zakharov

Frequent Co-Authors

Vladimir G. Dubrovskii
Vladimir G. Dubrovskii Saint Petersburg State University
V. M. Ustinov
V. M. Ustinov Russian Academy of Sciences
Peter Werner
Peter Werner Max Planck Society
Maria Tchernycheva
Maria Tchernycheva University of Paris-Saclay
Jean-Christophe Harmand
Jean-Christophe Harmand University of Paris-Saclay
Harri Lipsanen
Harri Lipsanen Aalto University
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
A. E. Zhukov
A. E. Zhukov National Research University Higher School of Economics
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Nikolai N. Ledentsov
Nikolai N. Ledentsov VI Systems GmbH

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