The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where G. E. Cirlin sits on this spectrum.
This scientist: 407 publications — 78th percentile
78% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where G. E. Cirlin sits on this spectrum.
This scientist: 41 D-Index — 2nd percentile
2% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
G. E. Cirlin is affiliated with ITMO University in the Russian Federation and has contributed extensively to the fields of engineering, physics and astronomy, and materials science. Their research primarily focuses on topics such as nanowire synthesis and applications, GaN-based semiconductor devices and materials, semiconductor quantum structures and devices, Ga2O3 and related materials, semiconductor materials and interfaces, photonic and optical devices, and ZnO doping and properties.
Their recent research publications cover a range of subjects related to nanowires, semiconductor materials, and flexible electronics. Notable papers include:
Throughout their career, Cirlin has collaborated frequently with a number of coauthors, including:
Their work has been published in several prominent scientific venues, reflecting their active engagement in the research community. The most frequent venues include:
Cirlin's research contributions span various subfields such as biomedical engineering, atomic and molecular physics and optics, electrical and electronic engineering, condensed matter physics, and materials chemistry. This range of expertise supports their investigations into semiconductor technologies and nanowire-based device architectures.
V. G. Dubrovskii;G. E. Cirlin;I. P. Soshnikov;A. A. Tonkikh
G. E. Cirlin;G. E. Cirlin;V. G. Dubrovskii;V. G. Dubrovskii;Yu. B. Samsonenko;Yu. B. Samsonenko;A. D. Bouravleuv;A. D. Bouravleuv
V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;J. C. Harmand
V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;I. P. Soshnikov
V. G. Dubrovskii;G. E. Cirlin;V. M. Ustinov
Maria Tchernycheva;Laurent Travers;Gilles Patriarche;Frank Glas
Maria Tchernycheva;George E. Cirlin;Gilles Patriarche;Laurent Travers
V. G. Dubrovskii;V. G. Dubrovskii;G. E. Cirlin;G. E. Cirlin;N. V. Sibirev;F. Jabeen
V. G. Dubrovskii;G. E. Cirlin;V. M. Ustinov
G. E. Cirlin;V. G. Dubrovskii;I. P. Soshnikov;N. V. Sibirev
M. Tchernycheva;M. Tchernycheva;C. Sartel;G. Cirlin;L. Travers
M Tchernycheva;J C Harmand;G Patriarche;L Travers
V G Dubrovskii;N V Sibirev;G E Cirlin;M Tchernycheva
Maria Timofeeva;Lukas Lang;Flavia Timpu;Claude Renaut
V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;G. E. Cirlin;A. D. Bouravleuv
L Largeau;D L Dheeraj;M Tchernycheva;G E Cirlin
R Heitz;N.N Ledentsov;D Bimberg;A.Yu Egorov
J.C. Harmand;M. Tchernycheva;G. Patriarche;L. Travers
V G Dubrovskii;N V Sibirev;G E Cirlin;G E Cirlin;M Tchernycheva
R. Heitz;N. N. Ledentsov;D. Bimberg;A. Yu. Egorov
G. E. Cirlin;G. M. Guryanov;A. O. Golubok;S. Ya. Tipissev
V.G. Talalaev;V.G. Talalaev;G.E. Cirlin;A.A. Tonkikh;N.D. Zakharov
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