2026 Nikolai N. Ledentsov: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	67	5018	4855	292	282	504	21705

Nikolai N. Ledentsov publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Nikolai N. Ledentsov sits on this spectrum.

50 publications 1,163+

This scientist: 504 publications — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Nikolai N. Ledentsov D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Nikolai N. Ledentsov sits on this spectrum.

40 D-Index 165+

This scientist: 67 D-Index — 61st percentile

61% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Nikolai N. Ledentsov is affiliated with VI Systems GmbH in Germany and conducts research primarily in the field of Engineering, with a focus on Electrical and Electronic Engineering. Their scholarly output includes numerous publications covering specialized subfields such as Atomic and Molecular Physics, and Optics, as well as topics related to Spectroscopy, Artificial Intelligence, and Astronomy and Astrophysics.

Their main research topics reflect a concentration on photonics and semiconductor laser technologies. These include:

Photonic and Optical Devices
Semiconductor Lasers and Optical Devices
Optical Network Technologies
Semiconductor Quantum Structures and Devices
Advanced Optical Network Technologies
Advancements in PLL and VCO Technologies
Spectroscopy and Laser Applications

Notable recent papers authored or co-authored by Nikolai N. Ledentsov include:

High Speed VCSEL Technology and Applications, 2022, Journal of Lightwave Technology
Wafer-fused 1300 nm VCSELs with an active region based on superlattice, 2021, Electronics Letters
High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance, 2022, IEEE Journal of Quantum Electronics
Serial data transmission at 224 Gbit/s applying directly modulated 850 and 910 nm VCSELs, 2021, Electronics Letters
Energy Efficient 850 nm VCSEL Based Optical Transmitter and Receiver Link Capable of 80 Gbit/s NRZ Multi-Mode Fiber Data Transmission, 2020, Journal of Lightwave Technology

Frequent close collaborators in their research are:

N. N. Ledentsov
V. A. Shchukin
O. Makarov
S. A. Blokhin
A. A. Blokhin

The scientist's publications appear predominantly in the following venues:

Photonics
Electronics Letters
Journal of Lightwave Technology
Advanced Photonics Research
IEEE Journal of Quantum Electronics

Best Publications

Quantum dot heterostructures

Dieter Bimberg;Marius Grundmann;Nikolai N. Ledentsov

4566
Citations
Ultranarrow Luminescence Lines from Single Quantum Dots.

M. Grundmann;J. Christen;N. N. Ledentsov;J. Bohrer

979
Citations
Spontaneous ordering of arrays of coherent strained islands.

V. A. Shchukin;N. N. Ledentsov;P. S. Kop'ev;D. Bimberg

788
Citations
InGaAs-GaAs quantum-dot lasers

D. Bimberg;N. Kirstaedter;N.N. Ledentsov;Zh.I. Alferov

743
Citations
Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth.

N. N. Ledentsov;V. A. Shchukin;M. Grundmann;N. Kirstaedter

652
Citations
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots

R. Heitz;M. Veit;N. N. Ledentsov;A. Hoffmann

642
Citations
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

V. M. Ustinov;N. A. Maleev;A. E. Zhukov;A. R. Kovsh

518
Citations
Quantum dot heterostructures: Fabrication, properties, lasers (Review)

N. N. Ledentsov;V. M. Ustinov;V. A. Shchukin;P. S. Kop’ev

468
Citations
Epitaxy of Nanostructures

Vitaly A. Shchukin;Nikolai N. Ledentsov;Dieter Bimberg

443
Citations
Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers

N. Kirstaedter;O. G. Schmidt;N. N. Ledentsov;D. Bimberg

426
Citations
RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS

F. Hatami;N. N. Ledentsov;M. Grundmann;J. Böhrer

412
Citations
Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces.

R. Nötzel;N. N. Ledentsov;L. Däweritz;M. Hohenstein

367
Citations
InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m

J.A. Lott;N.N. Ledentsov;V.M. Ustinov;N.A. Maleev

350
Citations
Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots

R. Heitz;M. Grundmann;N. N. Ledentsov;L. Eckey

345
Citations
Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing

N.N Ledentsov;M Grundmann;N Kirstaedter;O Schmidt

322
Citations
Quantum Dot Lasers

D. Bimberg;N.N. Ledentsov;R. Sellin;C. Ribbat

316
Citations
Semiconductor quantum-wire structures directly grown on high-index surfaces.

R. Nötzel;N. N. Ledentsov;L. Däweritz;K. Ploog

307
Citations
Quantum dot lasers: breakthrough in optoelectronics

D. Bimberg;M. Grundmann;F. Heinrichsdorff;N.N. Ledentsov

297
Citations
Carrier dynamics in type-II GaSb/GaAs quantum dots

F. Hatami;M. Grundmann;N. N. Ledentsov;F. Heinrichsdorff

296
Citations
Radiative states in type-II GaSb/GaAs quantum wells.

N. N. Ledentsov;J. Böhrer;M. Beer;F. Heinrichsdorff

287
Citations
Quantum-dot heterostructure lasers

N.N. Ledentsov;M. Grundmann;F. Heinrichsdorff;D. Bimberg

285
Citations
Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors

M. V. Maximov;A. F. Tsatsul’nikov;B. V. Volovik;D. S. Sizov

257
Citations
High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range

N.N. Ledentsov;A.R. Kovsh;A.E. Zhukov;N.A. Maleev

217
Citations
InAs-GaAs Quantum Pyramid Lasers: In Situ Growth, Radiative Lifetimes and Polarization Properties

D. Bimberg;N. N. Ledentsov;M. Grundmann;N. Kirstaedter

214
Citations
Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing

A. O. Kosogov;P. Werner;U. Gösele;N. N. Ledentsov

206
Citations
Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

M. Strassburg;V. Kutzer;U. W. Pohl;A. Hoffmann

199
Citations

Frequent Co-Authors

Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)

V. M. Ustinov Russian Academy of Sciences

A. R. Kovsh Arista (United States)

A. E. Zhukov National Research University Higher School of Economics

Mikhail V. Maximov Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences