His scientific interests lie mostly in Quantum dot laser, Laser, Optoelectronics, Quantum dot and Optics. As part of one scientific family, A.R. Kovsh deals mainly with the area of Quantum dot laser, narrowing it down to issues related to the Injection seeder, and often Excited state. The concepts of his Laser study are interwoven with issues in Spectroscopy and Quantum efficiency.
When carried out as part of a general Optoelectronics research project, his work on Gallium arsenide is frequently linked to work in Sign, therefore connecting diverse disciplines of study. His Quantum dot study combines topics from a wide range of disciplines, such as Wavelength, Lasing threshold, Diode, Ground state and Photoluminescence. His Optics research integrates issues from Pulse-width modulation, Power and Modulation.
His primary scientific interests are in Optoelectronics, Quantum dot, Quantum dot laser, Laser and Optics. His Optoelectronics research is multidisciplinary, relying on both Quantum well and Vertical-cavity surface-emitting laser. His study in Quantum dot is interdisciplinary in nature, drawing from both Molecular beam epitaxy, Quantum point contact, Condensed matter physics, Substrate and Photoluminescence.
As a part of the same scientific study, A.R. Kovsh usually deals with the Quantum dot laser, concentrating on Atomic physics and frequently concerns with Distributed feedback laser. He studied Laser and Diode that intersect with Energy conversion efficiency. His Optics study incorporates themes from Power and Modulation.
His primary areas of investigation include Optoelectronics, Optics, Quantum dot, Quantum dot laser and Laser. His Optoelectronics research includes themes of Vertical-cavity surface-emitting laser and Optical amplifier. His Optics study which covers Power that intersects with Dynamic range.
His studies in Quantum dot integrate themes in fields like Optical pumping, Mode-locking and Picosecond. He has researched Quantum dot laser in several fields, including Spontaneous emission, Laser diode, Second-harmonic generation, Relative intensity noise and Comb generator. His Laser research includes elements of Diode and Wavelength-division multiplexing.
His main research concerns Optoelectronics, Optics, Semiconductor laser theory, Laser and Quantum dot. Optoelectronics and Vertical-cavity surface-emitting laser are frequently intertwined in his study. His studies deal with areas such as Wavelength, Multi-mode optical fiber, Absorption, Continuous wave and Bandwidth as well as Semiconductor laser theory.
The concepts of his Laser study are interwoven with issues in Optical communication and Wavelength-division multiplexing. His Quantum dot research incorporates elements of Optical pumping, Diode and Gallium arsenide. His Quantum dot laser study integrates concerns from other disciplines, such as Spectroscopy, Atomic physics and Optical amplifier.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers
S. Fathpour;Z. Mi;P. Bhattacharya;A. R. Kovsh.
Applied Physics Letters (2004)
The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers
S. Fathpour;Z. Mi;P. Bhattacharya;A. R. Kovsh.
Applied Physics Letters (2004)
Quantum Dot Lasers
D. Bimberg;N.N. Ledentsov;R. Sellin;C. Ribbat.
(2003)
High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range
N.N. Ledentsov;A.R. Kovsh;A.E. Zhukov;N.A. Maleev.
Electronics Letters (2003)
High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range
N.N. Ledentsov;A.R. Kovsh;A.E. Zhukov;N.A. Maleev.
Electronics Letters (2003)
InAs/InGaAs/GaAs quantum dot lasers of 1.3 [micro sign]m range with high (88%) differential efficiency
A.R. Kovsh;N.A. Maleev;A.E. Zhukov;S.S. Mikhrin.
Electronics Letters (2002)
InAs/InGaAs/GaAs quantum dot lasers of 1.3 [micro sign]m range with high (88%) differential efficiency
A.R. Kovsh;N.A. Maleev;A.E. Zhukov;S.S. Mikhrin.
Electronics Letters (2002)
1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
Yu.M. Shernyakov;D.A. Bedarev;E.Yu. Kondrat'eva;P.S. Kop'ev.
Electronics Letters (1999)
1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
Yu.M. Shernyakov;D.A. Bedarev;E.Yu. Kondrat'eva;P.S. Kop'ev.
Electronics Letters (1999)
35 GHz mode-locking of 1.3 μm quantum dot lasers
M. Kuntz;G. Fiol;M. Lämmlin;D. Bimberg.
Applied Physics Letters (2004)
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Russian Academy of Sciences
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Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences
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Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Publications: 119
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