World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
57
Citations
9262
World Ranking
2013
National Ranking
787

Overview

A. R. Kovsh is affiliated with Arista in the United States and specializes in the field of engineering. Their research primarily focuses on electrical and electronic engineering, with additional work in atomic and molecular physics, and optics.

The scientist's research topics include:

  • Photonic and Optical Devices
  • Advanced Fiber Laser Technologies
  • Semiconductor Lasers and Optical Devices
  • Advanced Optical Network Technologies
  • Optical Network Technologies
  • Advanced Photonic Communication Systems

Kovsh has contributed to several recent publications. Two notable papers from 2024 include:

  • Efficient, high-power, narrow-linewidth, continuous-wave quantum-dot semiconductor comb laser (Scientific Reports, 2024)
  • Performance and Characterization Comparison of QD SOA, QW SOA, Bulk SOA and PDFA for Multi-Tbps O-Band WDM Links (Journal of Lightwave Technology, 2024)

Frequent co-authors in Kovsh's research include V. S. Mikhrin, M. S. Buyalo, A. Gubenko, S. S. Mikhrin, and Ashok V. Krishnamoorthy. Collaboration with these colleagues is evident in the shared authorship of various publications.

Kovsh's work has been published in established venues such as Scientific Reports and the Journal of Lightwave Technology.

Best Publications

  • InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m

    J.A. Lott;N.N. Ledentsov;V.M. Ustinov;N.A. Maleev

  • The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers

    S. Fathpour;Z. Mi;P. Bhattacharya;A. R. Kovsh

  • High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range

    N.N. Ledentsov;A.R. Kovsh;A.E. Zhukov;N.A. Maleev

  • InAs/InGaAs/GaAs quantum dot lasers of 1.3 [micro sign]m range with high (88%) differential efficiency

    A.R. Kovsh;N.A. Maleev;A.E. Zhukov;S.S. Mikhrin

  • AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs

    S. A. Blokhin;A. V. Sakharov;A. M. Nadtochy;A. S. Pauysov

  • Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

    A.E. Zhukov;A.R. Kovsh;V.M. Ustinov;Yu.M. Shernyakov

  • 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

    Yu.M. Shernyakov;D.A. Bedarev;E.Yu. Kondrat'eva;P.S. Kop'ev

  • Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates

    A. E. Zhukov;A. R. Kovsh;N. A. Maleev;S. S. Mikhrin

  • Quantum dot laser with 75 nm broad spectrum of emission.

    A. Kovsh;I. Krestnikov;D. Livshits;S. Mikhrin

  • InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain

    A.R. Kovsh;N.A. Maleev;A.E. Zhukov;S.S. Mikhrin

  • 35 GHz mode-locking of 1.3 μm quantum dot lasers

    M. Kuntz;G. Fiol;M. Lämmlin;D. Bimberg

  • Complete suppression of filamentation and superior beam quality in quantum-dot lasers

    Ch. Ribbat;R. L. Sellin;I. Kaiander;F. Hopfer

  • Feedback sensitivity of 1.3 /spl mu/m InAs/GaAs quantum dot lasers

    D. O'Brien;S.P. Hegarty;G. Huyet;J.G. McInerney

  • High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser

    M. V. Maximov;Yu. M. Shernyakov;A. F. Tsatsul’nikov;A. V. Lunev

  • Effect of matrix on InAs self-organized quantum dots on InP substrate

    V. M. Ustinov;E. R. Weber;S. Ruvimov;Z. Liliental-Weber

  • 3.9 W CW power from sub-monolayer quantum dot diode laser

    A.E. Zhukov;A.R. Kovsh;S.S. Mikhrin;N.A. Maleev

  • Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser

    Alexey E. Zhukov;Victor M. Ustinov;Anton Yu. Egorov;Alexey R. Kovsh

  • Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth

    F. Hopfer;A. Mutig;M. Kuntz;G. Fiol

  • Electronic structure of self-assembled InAs quantum dots in GaAs matrix

    P. N. Brounkov;A. Polimeni;S. T. Stoddart;M. Henini

  • Gain characteristics of quantum dot injection lasers

    A E Zhukov;A R Kovsh;V M Ustinov;A Yu Egorov

  • Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

    M.V. Maximov;L.V. Asryan;Yu.M. Shernyakov;A.F. Tsatsul'nikov

Frequent Co-Authors

V. M. Ustinov
V. M. Ustinov Russian Academy of Sciences
A. E. Zhukov
A. E. Zhukov National Research University Higher School of Economics
Mikhail V. Maximov
Mikhail V. Maximov Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences
N. N. Ledentsov
N. N. Ledentsov Ioffe Institute
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
Richard V. Penty
Richard V. Penty University of Cambridge
Ian H. White
Ian H. White University of Bath
Mark G. Thompson
Mark G. Thompson University of Bristol
Peter Werner
Peter Werner Max Planck Society
Edik U. Rafailov
Edik U. Rafailov Aston University

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