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N. N. Ledentsov

N. N. Ledentsov

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Electronics and Electrical Engineering
Russia
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
63
Citations
18127
World Ranking
1348
National Ranking
2

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Russia Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Russia Leader Award

Overview

N. N. Ledentsov is affiliated with the Ioffe Institute in the Russian Federation and has contributed extensively to the fields of engineering, particularly electrical and electronic engineering. Their research focuses mainly on photonic and optical devices, semiconductor lasers and optical devices, and optical network technologies.

The scientist's primary research topics include:

  • Photonic and Optical Devices
  • Semiconductor Lasers and Optical Devices
  • Optical Network Technologies
  • Semiconductor Quantum Structures and Devices
  • Photonic Crystals and Applications
  • Advanced Fiber Laser Technologies
  • Advancements in PLL and VCO Technologies

Ledentsov has published in various high-impact scientific venues. Frequent publication venues are:

  • Photonics
  • Journal of Lightwave Technology
  • Electronics Letters
  • Optics Express
  • Advanced Photonics Research

The following papers authored or coauthored by Ledentsov are notable recent contributions:

  • "High Speed VCSEL Technology and Applications," 2022, Journal of Lightwave Technology
  • "Serial data transmission at 224 Gbit/s applying directly modulated 850 and 910 nm VCSELs," 2021, Electronics Letters
  • "Single-Mode 940 nm VCSELs With Narrow Divergence Angles and High-Power Performances for Fiber and Free-Space Optical Communications," 2020, IEEE Access
  • "Energy Efficient 850 nm VCSEL Based Optical Transmitter and Receiver Link Capable of 80 Gbit/s NRZ Multi-Mode Fiber Data Transmission," 2020, Journal of Lightwave Technology
  • "Coherent CW THz generation with a coupled-cavity mini-array VCSEL," 2025, Electronics Letters

Among frequent collaborators are:

  • N. N. Ledentsov (self-collaboration count: 11)
  • O. Makarov
  • V. A. Shchukin
  • V. P. Kalosha
  • J. P. Turkiewicz

The scientist's work largely aligns with subfields of electrical and electronic engineering and atomic and molecular physics, as well as optics. Ledentsov's research contributions span areas that intersect semiconductor quantum structures and applied photonic technologies, reflecting a technical focus on the capabilities and applications of laser technology including vertical-cavity surface-emitting lasers (VCSELs).

Best Publications

  • Quantum dot heterostructures

    Dieter Bimberg;Marius Grundmann;Nikolai N. Ledentsov

  • Low threshold, large To injection laser emission from (InGa)As quantum dots

    N. Kirstaedter;N.N. Ledentsov;M. Grundmann;D. Bimberg

  • Ultranarrow Luminescence Lines from Single Quantum Dots.

    M. Grundmann;J. Christen;N. N. Ledentsov;J. Bohrer

  • Spontaneous ordering of arrays of coherent strained islands.

    V. A. Shchukin;N. N. Ledentsov;P. S. Kop'ev;D. Bimberg

  • InGaAs-GaAs quantum-dot lasers

    D. Bimberg;N. Kirstaedter;N.N. Ledentsov;Zh.I. Alferov

  • Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth.

    N. N. Ledentsov;V. A. Shchukin;M. Grundmann;N. Kirstaedter

  • Energy relaxation by multiphonon processes in InAs/GaAs quantum dots

    R. Heitz;M. Veit;N. N. Ledentsov;A. Hoffmann

  • InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

    V. M. Ustinov;N. A. Maleev;A. E. Zhukov;A. R. Kovsh

  • Quantum dot heterostructures: Fabrication, properties, lasers (Review)

    N. N. Ledentsov;V. M. Ustinov;V. A. Shchukin;P. S. Kop’ev

  • Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers

    N. Kirstaedter;O. G. Schmidt;N. N. Ledentsov;D. Bimberg

  • RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS

    F. Hatami;N. N. Ledentsov;M. Grundmann;J. Böhrer

  • Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces.

    R. Nötzel;N. N. Ledentsov;L. Däweritz;M. Hohenstein

  • InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m

    J.A. Lott;N.N. Ledentsov;V.M. Ustinov;N.A. Maleev

  • Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots

    R. Heitz;M. Grundmann;N. N. Ledentsov;L. Eckey

  • The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers

    S. Fathpour;Z. Mi;P. Bhattacharya;A. R. Kovsh

  • Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing

    N.N Ledentsov;M Grundmann;N Kirstaedter;O Schmidt

  • Quantum Dot Lasers

    D. Bimberg;N.N. Ledentsov;R. Sellin;C. Ribbat

  • Semiconductor quantum-wire structures directly grown on high-index surfaces.

    R. Nötzel;N. N. Ledentsov;L. Däweritz;K. Ploog

  • Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

    R. L. Sellin;Ch. Ribbat;M. Grundmann;N. N. Ledentsov

  • Quantum dot lasers: breakthrough in optoelectronics

    D. Bimberg;M. Grundmann;F. Heinrichsdorff;N.N. Ledentsov

  • Carrier dynamics in type-II GaSb/GaAs quantum dots

    F. Hatami;M. Grundmann;N. N. Ledentsov;F. Heinrichsdorff

  • Radiative states in type-II GaSb/GaAs quantum wells.

    N. N. Ledentsov;J. Böhrer;M. Beer;F. Heinrichsdorff

  • Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors

    M. V. Maximov;A. F. Tsatsul’nikov;B. V. Volovik;D. S. Sizov

  • High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range

    N.N. Ledentsov;A.R. Kovsh;A.E. Zhukov;N.A. Maleev

  • InAs-GaAs Quantum Pyramid Lasers: In Situ Growth, Radiative Lifetimes and Polarization Properties

    D. Bimberg;N. N. Ledentsov;M. Grundmann;N. Kirstaedter

  • Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing

    A. O. Kosogov;P. Werner;U. Gösele;N. N. Ledentsov

  • Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

    M. Strassburg;V. Kutzer;U. W. Pohl;A. Hoffmann

  • InAs/InGaAs/GaAs quantum dot lasers of 1.3 [micro sign]m range with high (88%) differential efficiency

    A.R. Kovsh;N.A. Maleev;A.E. Zhukov;S.S. Mikhrin

  • High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers

    S S Mikhrin;A R Kovsh;I L Krestnikov;A V Kozhukhov

  • High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser

    Edik U. Rafailov;Maria Ana Cataluna;Wilson Sibbett;N. D. Il'Inskaya

  • High-Speed Transmission in Multimode Fibers

    R.E. Freund;C.-A. Bunge;N.N. Ledentsov;D. Molin

  • InAs/GaAs quantum dots radiative recombination from zero‐dimensional states

    M. Grundmann;N. N. Ledentsov;R. Heitz;L. Eckey

  • Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

    S.A. Blokhin;J.A. Lott;A. Mutig;G. Fiol

Frequent Co-Authors

V. M. Ustinov
V. M. Ustinov Russian Academy of Sciences
Mikhail V. Maximov
Mikhail V. Maximov Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences
A. R. Kovsh
A. R. Kovsh Arista (United States)
A. E. Zhukov
A. E. Zhukov National Research University Higher School of Economics
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
Marius Grundmann
Marius Grundmann Leipzig University
Dagmar Gerthsen
Dagmar Gerthsen Karlsruhe Institute of Technology
G. E. Cirlin
G. E. Cirlin ITMO University
Andreas Rosenauer
Andreas Rosenauer University of Bremen
Peter Werner
Peter Werner Max Planck Society

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