2023 - Research.com Materials Science in Russia Leader Award
2022 - Research.com Materials Science in Russia Leader Award
Quantum dot, Optoelectronics, Quantum dot laser, Laser and Condensed matter physics are his primary areas of study. His Quantum dot research integrates issues from Molecular beam epitaxy, Semiconductor laser theory, Ground state, Lasing threshold and Photoluminescence. His Optoelectronics study integrates concerns from other disciplines, such as Quantum well and Continuous wave.
His biological study spans a wide range of topics, including Ingaas gaas, Differential gain, Charge carrier and Quantum efficiency. His Laser research is multidisciplinary, relying on both Wavelength, Diode and Current density. V. M. Ustinov has included themes like Cathodoluminescence, Molecular physics and Spectral line in his Condensed matter physics study.
V. M. Ustinov mainly focuses on Optoelectronics, Quantum dot, Laser, Condensed matter physics and Quantum dot laser. His studies deal with areas such as Quantum well and Optics as well as Optoelectronics. V. M. Ustinov interconnects Molecular beam epitaxy, Semiconductor laser theory, Excited state, Substrate and Photoluminescence in the investigation of issues within Quantum dot.
His study in Laser is interdisciplinary in nature, drawing from both Wavelength, Diode and Aperture. His Condensed matter physics research incorporates themes from Wetting layer, Electron and Atomic physics. V. M. Ustinov combines subjects such as Current density, Quantum point contact and Ground state with his study of Quantum dot laser.
V. M. Ustinov spends much of his time researching Optoelectronics, Laser, Optics, Epitaxy and Quantum dot. V. M. Ustinov has researched Optoelectronics in several fields, including Quantum well, Vertical-cavity surface-emitting laser and Transistor. His Laser research includes themes of Radiation, Aperture and Semiconductor.
His work in the fields of Epitaxy, such as Molecular beam epitaxy, intersects with other areas such as Electron-beam lithography. His Quantum dot study combines topics from a wide range of disciplines, such as Optical pumping, Stimulated emission, Photocurrent, Condensed matter physics and Ground state. His study in the fields of Superlattice under the domain of Condensed matter physics overlaps with other disciplines such as Atomic force microscopy.
His scientific interests lie mostly in Optoelectronics, Laser, Quantum well, Optics and Condensed matter physics. The Optoelectronics study combines topics in areas such as Transistor and Photon. His work carried out in the field of Laser brings together such families of science as Aperture, Semiconductor and Modulation.
His Quantum well research includes elements of Photoluminescence, Electron temperature, Electric field and Electromagnetically induced transparency, Atomic physics. His Condensed matter physics research is multidisciplinary, incorporating elements of Quantum dot, Molecular physics, Electron and Nanometre. His Quantum dot research incorporates elements of Range, Threshold current, Lasing wavelength, Transmission electron microscopy and Magnetic field.
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Low threshold, large To injection laser emission from (InGa)As quantum dots
N. Kirstaedter;N.N. Ledentsov;M. Grundmann;D. Bimberg.
Electronics Letters (1994)
Ultranarrow Luminescence Lines from Single Quantum Dots.
M. Grundmann;J. Christen;N. N. Ledentsov;J. Bohrer.
Physical Review Letters (1995)
Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth.
N. N. Ledentsov;V. A. Shchukin;M. Grundmann;N. Kirstaedter.
Physical Review B (1996)
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
R. Heitz;M. Veit;N. N. Ledentsov;A. Hoffmann.
Physical Review B (1997)
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
V. M. Ustinov;N. A. Maleev;A. E. Zhukov;A. R. Kovsh.
Applied Physics Letters (1999)
Quantum dot heterostructures: Fabrication, properties, lasers (Review)
N. N. Ledentsov;V. M. Ustinov;V. A. Shchukin;P. S. Kop’ev.
Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
N. Kirstaedter;O. G. Schmidt;N. N. Ledentsov;D. Bimberg.
Applied Physics Letters (1996)
Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment
V. G. Dubrovskii;G. E. Cirlin;I. P. Soshnikov;A. A. Tonkikh.
Physical Review B (2005)
Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots
R. Heitz;M. Grundmann;N. N. Ledentsov;L. Eckey.
Applied Physics Letters (1996)
Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing
N.N Ledentsov;M Grundmann;N Kirstaedter;O Schmidt.
Solid-state Electronics (1996)
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