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Materials Science
Russia
2026

D-Index & Metrics

Materials Science

D-Index
74
Citations
20734
World Ranking
3610
National Ranking
5

Physics

D-Index
74
Citations
21001
World Ranking
3456
National Ranking
18

V. M. Ustinov publication distribution in Physics in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Physics in 2026. The highlighted bar marks where V. M. Ustinov sits on this spectrum.

103–122 publications: 7 scientists 123–142 publications: 10 scientists 143–162 publications: 31 scientists 163–182 publications: 35 scientists 183–202 publications: 53 scientists 203–222 publications: 81 scientists 223–242 publications: 85 scientists 243–262 publications: 112 scientists 263–282 publications: 114 scientists 283–302 publications: 126 scientists 303–322 publications: 136 scientists 323–342 publications: 162 scientists 343–362 publications: 155 scientists 363–382 publications: 156 scientists 383–402 publications: 134 scientists 403–422 publications: 145 scientists 423–442 publications: 147 scientists 443–462 publications: 131 scientists 463–482 publications: 131 scientists 483–502 publications: 116 scientists 503–522 publications: 106 scientists 523–542 publications: 103 scientists 543–562 publications: 87 scientists 563–582 publications: 84 scientists 583–602 publications: 94 scientists 603–622 publications: 70 scientists 623–642 publications: 76 scientists 643–662 publications: 60 scientists 663–682 publications: 54 scientists 683–702 publications: 60 scientists 703–722 publications: 48 scientists 723–742 publications: 64 scientists 743–762 publications: 48 scientists 763–782 publications: 37 scientists 783–802 publications: 43 scientists 803–822 publications: 34 scientists 823–842 publications: 36 scientists 843–862 publications: 32 scientists 863–882 publications: 32 scientists 883–902 publications: 31 scientists 903–922 publications: 25 scientists 923–942 publications: 15 scientists 943–962 publications: 24 scientists 963–982 publications: 13 scientists 983–1,002 publications: 21 scientists 1,003–1,022 publications: 21 scientists 1,023–1,042 publications: 16 scientists 1,043–1,062 publications: 9 scientists 1,063–1,082 publications: 19 scientists 1,083–1,102 publications: 11 scientists 1,103–1,122 publications: 17 scientists 1,123–1,142 publications: 11 scientists 1,143–1,162 publications: 7 scientists 1,163–1,182 publications: 4 scientists 1,183–1,202 publications: 10 scientists 1,203–1,222 publications: 8 scientists 1,223–1,242 publications: 16 scientists 1,243–1,262 publications: 4 scientists 1,263–1,282 publications: 10 scientists 1,283–1,302 publications: 5 scientists 1,303–1,322 publications: 7 scientists 1,323–1,342 publications: 4 scientists 1,343–1,362 publications: 8 scientists 1,363–1,382 publications: 6 scientists 1,383–1,402 publications: 7 scientists 1,403–1,422 publications: 3 scientists 1,423–1,442 publications: 4 scientists 1,443–1,462 publications: 4 scientists 1,463–1,468 publications: 3 scientists 1,469+ publications: 100 scientists
103 publications 1,469+

This scientist: 772 publications — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,469 publications or more.

V. M. Ustinov D-index placement in Physics in 2026

The chart shows the D-index (discipline H-index) distribution of Physics scientists ranked by Research.com in 2026. The highlighted bar marks where V. M. Ustinov sits on this spectrum.

70–71 D-Index: 76 scientists 72–73 D-Index: 110 scientists 74–75 D-Index: 143 scientists 76–77 D-Index: 153 scientists 78–79 D-Index: 144 scientists 80–81 D-Index: 167 scientists 82–83 D-Index: 167 scientists 84–85 D-Index: 166 scientists 86–87 D-Index: 132 scientists 88–89 D-Index: 155 scientists 90–91 D-Index: 134 scientists 92–93 D-Index: 137 scientists 94–95 D-Index: 102 scientists 96–97 D-Index: 112 scientists 98–99 D-Index: 110 scientists 100–101 D-Index: 116 scientists 102–103 D-Index: 97 scientists 104–105 D-Index: 103 scientists 106–107 D-Index: 87 scientists 108–109 D-Index: 90 scientists 110–111 D-Index: 67 scientists 112–113 D-Index: 78 scientists 114–115 D-Index: 75 scientists 116–117 D-Index: 67 scientists 118–119 D-Index: 69 scientists 120–121 D-Index: 60 scientists 122–123 D-Index: 59 scientists 124–125 D-Index: 53 scientists 126–127 D-Index: 42 scientists 128–129 D-Index: 41 scientists 130–131 D-Index: 33 scientists 132–133 D-Index: 32 scientists 134–135 D-Index: 45 scientists 136–137 D-Index: 19 scientists 138–139 D-Index: 24 scientists 140–141 D-Index: 28 scientists 142–143 D-Index: 31 scientists 144–145 D-Index: 22 scientists 146–147 D-Index: 20 scientists 148–149 D-Index: 12 scientists 150–151 D-Index: 16 scientists 152–153 D-Index: 24 scientists 154–155 D-Index: 23 scientists 156–157 D-Index: 15 scientists 158–159 D-Index: 15 scientists 160–161 D-Index: 11 scientists 162–163 D-Index: 17 scientists 164–165 D-Index: 12 scientists 166–167 D-Index: 11 scientists 168–169 D-Index: 9 scientists 170–171 D-Index: 9 scientists 172–173 D-Index: 11 scientists 174–175 D-Index: 4 scientists 176–177 D-Index: 8 scientists 178–179 D-Index: 5 scientists 180–181 D-Index: 3 scientists 182–183 D-Index: 4 scientists 184 D-Index: 4 scientists 185+ D-Index: 99 scientists
70 D-Index 185+

This scientist: 74 D-Index — 7th percentile

7% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 185 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Materials Science in Russia Leader Award
  • 2025 - Research.com Materials Science in Russia Leader Award
  • 2022 - Research.com Materials Science in Russia Leader Award

Overview

V. M. Ustinov is affiliated with the Russian Academy of Sciences in the Russian Federation and has a significant publication record in the fields of engineering and physics and astronomy. Their research primarily focuses on electrical and electronic engineering as well as atomic and molecular physics, and optics. Additional subfields include condensed matter physics, materials chemistry, and instrumentation.

The main areas of study for Ustinov cover photonic and optical devices, semiconductor lasers and optical devices, and semiconductor quantum structures and devices. Their work also extends into atomic and subatomic physics research, quantum optics and atomic interactions, GaN-based semiconductor devices and materials, and laser design and applications.

Ustinov has contributed to several publications across notable venues including:

  • Technical Physics Letters (10 publications)
  • Письма в журнал технической физики (7 publications)
  • Journal of Physics Conference Series (6 publications)
  • Journal of Optical Technology (3 publications)
  • Semiconductors (2 publications)

Among recent papers authored or co-authored by Ustinov are:

  • High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance, 2022, IEEE Journal of Quantum Electronics
  • A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers, 2020, Technical Physics Letters
  • Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems, 2023, IEEE Photonics Technology Letters
  • The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology, 2020, Technical Physics Letters
  • 1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy, 2020, Semiconductors

The scholar collaborates frequently with several coauthors, including M. A. Bobrov, S. A. Blokhin, A. A. Blokhin, A. G. Kuzmenkov, and I. I. Novikov, with collaboration counts ranging from 29 to 40 joint works.

Best Publications

  • Low threshold, large To injection laser emission from (InGa)As quantum dots

    N. Kirstaedter;N.N. Ledentsov;M. Grundmann;D. Bimberg

  • InGaAs-GaAs quantum-dot lasers

    D. Bimberg;N. Kirstaedter;N.N. Ledentsov;Zh.I. Alferov

  • Energy relaxation by multiphonon processes in InAs/GaAs quantum dots

    R. Heitz;M. Veit;N. N. Ledentsov;A. Hoffmann

  • InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

    V. M. Ustinov;N. A. Maleev;A. E. Zhukov;A. R. Kovsh

  • Quantum dot heterostructures: Fabrication, properties, lasers (Review)

    N. N. Ledentsov;V. M. Ustinov;V. A. Shchukin;P. S. Kop’ev

  • Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers

    N. Kirstaedter;O. G. Schmidt;N. N. Ledentsov;D. Bimberg

  • Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

    V. G. Dubrovskii;G. E. Cirlin;I. P. Soshnikov;A. A. Tonkikh

  • InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m

    J.A. Lott;N.N. Ledentsov;V.M. Ustinov;N.A. Maleev

  • Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots

    R. Heitz;M. Grundmann;N. N. Ledentsov;L. Eckey

  • Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment

    M. Grundmann;N. N. Ledentsov;O. Stier;D. Bimberg

  • Quantum dot lasers: breakthrough in optoelectronics

    D. Bimberg;M. Grundmann;F. Heinrichsdorff;N.N. Ledentsov

  • Carrier dynamics in type-II GaSb/GaAs quantum dots

    F. Hatami;M. Grundmann;N. N. Ledentsov;F. Heinrichsdorff

  • Quantum-dot heterostructure lasers

    N.N. Ledentsov;M. Grundmann;F. Heinrichsdorff;D. Bimberg

  • Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy.

    V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;J. C. Harmand

  • Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors

    M. V. Maximov;A. F. Tsatsul’nikov;B. V. Volovik;D. S. Sizov

  • Semiconductor nanowhiskers: Synthesis, properties, and applications

    V. G. Dubrovskii;G. E. Cirlin;V. M. Ustinov

  • High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range

    N.N. Ledentsov;A.R. Kovsh;A.E. Zhukov;N.A. Maleev

  • InAs-GaAs Quantum Pyramid Lasers: In Situ Growth, Radiative Lifetimes and Polarization Properties

    D. Bimberg;N. N. Ledentsov;M. Grundmann;N. Kirstaedter

  • Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing

    A. O. Kosogov;P. Werner;U. Gösele;N. N. Ledentsov

  • InAs/InGaAs/GaAs quantum dot lasers of 1.3 [micro sign]m range with high (88%) differential efficiency

    A.R. Kovsh;N.A. Maleev;A.E. Zhukov;S.S. Mikhrin

Frequent Co-Authors

A. E. Zhukov
A. E. Zhukov National Research University Higher School of Economics
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
A. R. Kovsh
A. R. Kovsh Arista (United States)
Mikhail V. Maximov
Mikhail V. Maximov Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences
N. N. Ledentsov
N. N. Ledentsov Ioffe Institute
G. E. Cirlin
G. E. Cirlin ITMO University
Peter Werner
Peter Werner Max Planck Society
Marius Grundmann
Marius Grundmann Leipzig University
Vladimir G. Dubrovskii
Vladimir G. Dubrovskii Saint Petersburg State University
C. M. Sotomayor Torres
C. M. Sotomayor Torres Institut Català de Nanociència i Nanotecnologia

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