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Materials Science
Russia
2026

D-Index & Metrics

Materials Science

D-Index
74
Citations
20734
World Ranking
3612
National Ranking
5

Physics

D-Index
74
Citations
21001
World Ranking
3456
National Ranking
18

Research.com Recognitions

  • 2026 - Research.com Materials Science in Russia Leader Award
  • 2025 - Research.com Materials Science in Russia Leader Award
  • 2022 - Research.com Materials Science in Russia Leader Award

Overview

V. M. Ustinov is affiliated with the Russian Academy of Sciences in the Russian Federation and has a significant publication record in the fields of engineering and physics and astronomy. Their research primarily focuses on electrical and electronic engineering as well as atomic and molecular physics, and optics. Additional subfields include condensed matter physics, materials chemistry, and instrumentation.

The main areas of study for Ustinov cover photonic and optical devices, semiconductor lasers and optical devices, and semiconductor quantum structures and devices. Their work also extends into atomic and subatomic physics research, quantum optics and atomic interactions, GaN-based semiconductor devices and materials, and laser design and applications.

Ustinov has contributed to several publications across notable venues including:

  • Technical Physics Letters (10 publications)
  • Письма в журнал технической физики (7 publications)
  • Journal of Physics Conference Series (6 publications)
  • Journal of Optical Technology (3 publications)
  • Semiconductors (2 publications)

Among recent papers authored or co-authored by Ustinov are:

  • High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance, 2022, IEEE Journal of Quantum Electronics
  • A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers, 2020, Technical Physics Letters
  • Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems, 2023, IEEE Photonics Technology Letters
  • The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology, 2020, Technical Physics Letters
  • 1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy, 2020, Semiconductors

The scholar collaborates frequently with several coauthors, including M. A. Bobrov, S. A. Blokhin, A. A. Blokhin, A. G. Kuzmenkov, and I. I. Novikov, with collaboration counts ranging from 29 to 40 joint works.

Best Publications

  • Low threshold, large To injection laser emission from (InGa)As quantum dots

    N. Kirstaedter;N.N. Ledentsov;M. Grundmann;D. Bimberg

  • InGaAs-GaAs quantum-dot lasers

    D. Bimberg;N. Kirstaedter;N.N. Ledentsov;Zh.I. Alferov

  • Energy relaxation by multiphonon processes in InAs/GaAs quantum dots

    R. Heitz;M. Veit;N. N. Ledentsov;A. Hoffmann

  • InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

    V. M. Ustinov;N. A. Maleev;A. E. Zhukov;A. R. Kovsh

  • Quantum dot heterostructures: Fabrication, properties, lasers (Review)

    N. N. Ledentsov;V. M. Ustinov;V. A. Shchukin;P. S. Kop’ev

  • Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers

    N. Kirstaedter;O. G. Schmidt;N. N. Ledentsov;D. Bimberg

  • Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

    V. G. Dubrovskii;G. E. Cirlin;I. P. Soshnikov;A. A. Tonkikh

  • InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m

    J.A. Lott;N.N. Ledentsov;V.M. Ustinov;N.A. Maleev

  • Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots

    R. Heitz;M. Grundmann;N. N. Ledentsov;L. Eckey

  • Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment

    M. Grundmann;N. N. Ledentsov;O. Stier;D. Bimberg

  • Quantum dot lasers: breakthrough in optoelectronics

    D. Bimberg;M. Grundmann;F. Heinrichsdorff;N.N. Ledentsov

  • Carrier dynamics in type-II GaSb/GaAs quantum dots

    F. Hatami;M. Grundmann;N. N. Ledentsov;F. Heinrichsdorff

  • Quantum-dot heterostructure lasers

    N.N. Ledentsov;M. Grundmann;F. Heinrichsdorff;D. Bimberg

  • Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy.

    V. G. Dubrovskii;N. V. Sibirev;G. E. Cirlin;J. C. Harmand

  • Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors

    M. V. Maximov;A. F. Tsatsul’nikov;B. V. Volovik;D. S. Sizov

  • Semiconductor nanowhiskers: Synthesis, properties, and applications

    V. G. Dubrovskii;G. E. Cirlin;V. M. Ustinov

  • High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range

    N.N. Ledentsov;A.R. Kovsh;A.E. Zhukov;N.A. Maleev

  • InAs-GaAs Quantum Pyramid Lasers: In Situ Growth, Radiative Lifetimes and Polarization Properties

    D. Bimberg;N. N. Ledentsov;M. Grundmann;N. Kirstaedter

  • Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing

    A. O. Kosogov;P. Werner;U. Gösele;N. N. Ledentsov

  • InAs/InGaAs/GaAs quantum dot lasers of 1.3 [micro sign]m range with high (88%) differential efficiency

    A.R. Kovsh;N.A. Maleev;A.E. Zhukov;S.S. Mikhrin

Frequent Co-Authors

A. E. Zhukov
A. E. Zhukov National Research University Higher School of Economics
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
A. R. Kovsh
A. R. Kovsh Arista (United States)
Mikhail V. Maximov
Mikhail V. Maximov Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences
N. N. Ledentsov
N. N. Ledentsov Ioffe Institute
G. E. Cirlin
G. E. Cirlin ITMO University
Peter Werner
Peter Werner Max Planck Society
Marius Grundmann
Marius Grundmann Leipzig University
Vladimir G. Dubrovskii
Vladimir G. Dubrovskii Saint Petersburg State University
C. M. Sotomayor Torres
C. M. Sotomayor Torres Institut Català de Nanociència i Nanotecnologia

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