2022 - Research.com Electronics and Electrical Engineering in Russia Leader Award
Mikhail V. Maximov spends much of his time researching Quantum dot, Optoelectronics, Laser, Quantum dot laser and Semiconductor laser theory. His research in Quantum dot intersects with topics in Molecular beam epitaxy, Layer, Substrate, Condensed matter physics and Photoluminescence. His Optoelectronics research incorporates elements of Current density and Nanotechnology.
His Laser research is multidisciplinary, incorporating perspectives in Diode and Heterojunction. His Quantum dot laser research is multidisciplinary, incorporating elements of Threshold current and Quantum efficiency. As a part of the same scientific family, Mikhail V. Maximov mostly works in the field of Semiconductor laser theory, focusing on Excited state and, on occasion, Charge carrier and Differential gain.
Mikhail V. Maximov focuses on Optoelectronics, Laser, Quantum dot, Quantum dot laser and Optics. His research combines Quantum well and Optoelectronics. His study in the field of Continuous wave also crosses realms of Beam divergence.
His research integrates issues of Molecular beam epitaxy, Excited state, Condensed matter physics, Substrate and Photoluminescence in his study of Quantum dot. His Quantum dot laser study combines topics in areas such as Indium gallium arsenide, Quantum point contact and Atomic physics, Ground state. His Lasing threshold research incorporates themes from Whispering-gallery wave, Doping, Exciton, Refractive index and Spectral line.
The scientist’s investigation covers issues in Optoelectronics, Laser, Quantum dot, Quantum well and Lasing threshold. In Optoelectronics, he works on issues like Modulation, which are connected to Dopant. To a larger extent, Mikhail V. Maximov studies Optics with the aim of understanding Laser.
His Quantum dot study incorporates themes from Indium, Spectral line, Molecular physics, Substrate and Quantum dot laser. His Quantum well study which covers Quantum efficiency that intersects with Chemical vapor deposition. His work investigates the relationship between Lasing threshold and topics such as Full width at half maximum that intersect with problems in Laser diode.
His primary areas of investigation include Optoelectronics, Laser, Quantum dot, Quantum well and Optics. His Optoelectronics research focuses on Ingaas gaas and how it connects with Etching. His Laser research integrates issues from Diode and Gallium arsenide.
His Quantum dot research is multidisciplinary, incorporating perspectives in Threshold current, Layer, Substrate, Spectral line and Photoluminescence. The Quantum well study combines topics in areas such as Photocurrent, Quantum, Condensed matter physics, Vertical-cavity surface-emitting laser and Electron. His work carried out in the field of Quantum dot laser brings together such families of science as Thermal resistance and Silicon.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Low threshold, large To injection laser emission from (InGa)As quantum dots
N. Kirstaedter;N.N. Ledentsov;M. Grundmann;D. Bimberg.
Electronics Letters (1994)
Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
N. Kirstaedter;O. G. Schmidt;N. N. Ledentsov;D. Bimberg.
Applied Physics Letters (1996)
Quantum dot lasers: breakthrough in optoelectronics
D. Bimberg;M. Grundmann;F. Heinrichsdorff;N.N. Ledentsov.
Thin Solid Films (2000)
Quantum-dot heterostructure lasers
N.N. Ledentsov;M. Grundmann;F. Heinrichsdorff;D. Bimberg.
IEEE Journal of Selected Topics in Quantum Electronics (2000)
Nanoimprint lithography: An alternative nanofabrication approach
C.M. Sotomayor Torres;S. Zankovych;J. Seekamp;A. P. Kam.
Materials Science and Engineering: C (2003)
Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
M. V. Maximov;A. F. Tsatsul’nikov;B. V. Volovik;D. S. Sizov.
Physical Review B (2000)
High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range
N.N. Ledentsov;A.R. Kovsh;A.E. Zhukov;N.A. Maleev.
Electronics Letters (2003)
Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix
M. Strassburg;V. Kutzer;U. W. Pohl;A. Hoffmann.
Applied Physics Letters (1998)
InAs/InGaAs/GaAs quantum dot lasers of 1.3 [micro sign]m range with high (88%) differential efficiency
A.R. Kovsh;N.A. Maleev;A.E. Zhukov;S.S. Mikhrin.
Electronics Letters (2002)
High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers
S S Mikhrin;A R Kovsh;I L Krestnikov;A V Kozhukhov.
Semiconductor Science and Technology (2005)
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