World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
59
Citations
13333
World Ranking
1749
National Ranking
84

Materials Science

D-Index
59
Citations
13578
World Ranking
7328
National Ranking
290

Huiyun Liu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Huiyun Liu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 473 publications — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Huiyun Liu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Huiyun Liu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 59 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Huiyun Liu is affiliated with University College London in the United Kingdom. Their research spans primarily across the fields of Engineering and Physics and Astronomy, with a significant focus on Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Materials Chemistry, Biomedical Engineering, and Renewable Energy, Sustainability and the Environment.

The scientist's work covers a variety of topics, including:

  • Photonic and Optical Devices
  • Semiconductor Quantum Structures and Devices
  • Semiconductor Lasers and Optical Devices
  • Nanowire Synthesis and Applications
  • Advanced Photocatalysis Techniques
  • Photonic Crystals and Applications
  • Advanced oxidation water treatment

Liu has published extensively, with frequent contributions to the following venues:

  • Journal of Physics D Applied Physics
  • Chemical Engineering Journal
  • arXiv (Cornell University)
  • SSRN Electronic Journal
  • Optics Express

Several of their recent papers include:

  • Polypyrrole coated molybdenum disulfide composites as adsorbent for enhanced removal of Cr(VI) in aqueous solutions by adsorption combined with reduction, 2020, Chemical Engineering Journal
  • Anchoring CuFe2O4 nanoparticles into N-doped carbon nanosheets for peroxymonosulfate activation: Built-in electric field dominated radical and non-radical process, 2021, Chemical Engineering Journal
  • Construction of dual S-scheme Ag2CO3/Bi4O5I2/g-C3N4 heterostructure photocatalyst with enhanced visible-light photocatalytic degradation for tetracycline, 2022, Chemical Engineering Journal
  • Few-layer graphitic carbon nitride nanosheet with controllable functionalization as an effective metal-free activator for peroxymonosulfate photocatalytic activation: Role of the energy band bending, 2020, Chemical Engineering Journal
  • Constructing a plasma-based Schottky heterojunction for near-infrared-driven photothermal synergistic water disinfection: Synergetic effects and antibacterial mechanisms, 2021, Chemical Engineering Journal

Frequent collaborators in Huiyun Liu's research include Mingchu Tang, Siming Chen, A.J. Seeds, Huiwen Deng, and Hui Jia.

Best Publications

  • Electrically pumped continuous-wave III–V quantum dot lasers on silicon

    Siming Chen;Wei Li;Jiang Wu;Qi Jiang

  • Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate

    Huiyun Liu;Ting Wang;Qi Jiang;Richard Hogg

  • Classical aspects in above-threshold ionization with a midinfrared strong laser field.

    W. Quan;Z. Lin;M. Wu;H. Kang

  • 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates.

    Ting Wang;Huiyun Liu;Andrew Lee;Francesca Pozzi

  • Long lifetimes of quantum-dot intersublevel transitions in the terahertz range

    E. A. Zibik;E. A. Zibik;Thomas Grange;Thomas Grange;B. A. Carpenter;N. E. Porter

  • Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon.

    Jeppe V. Holm;Henrik I. Jørgensen;Peter Krogstrup;Jesper Nygård

  • Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

    Jiang Wu;Siming Chen;Alwyn Seeds;Huiyun Liu

  • Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

    H. Y. Liu;M. Hopkinson;C. N. Harrison;M. J. Steer

  • III–V nanowires and nanowire optoelectronic devices

    Yunyan Zhang;Jiang Wu;Martin Aagesen;Huiyun Liu

  • Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.

    Andrew Lee;Qi Jiang;Mingchu Tang;Alwyn Seeds

  • Nuclear Spin Switch in Semiconductor Quantum Dots

    A. I. Tartakovskii;T. Wright;A. Russell;V. I. Falko

  • Fast optical preparation, control, and readout of a single quantum dot spin.

    A. J. Ramsay;S. J. Boyle;R. S. Kolodka;José Brás Barreto de Oliveira;José Brás Barreto de Oliveira

  • Mode structure of the L3 photonic crystal cavity

    A. R. A. Chalcraft;S. Lam;D. O'Brien;T. F. Krauss

  • Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

    H. Y. Liu;M. J. Steer;T. J. Badcock;D. J. Mowbray

  • 1.3 µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

    I.R. Sellers;H.Y. Liu;K.M. Groom;D.T. Childs

  • 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers

    Mingchu Tang;Siming Chen;Jiang Wu;Qi Jiang

  • High Detectivity and Transparent Few‐Layer MoS 2 /Glassy‐Graphene Heterostructure Photodetectors

    Hao Xu;Xiaoyu Han;Xiao Dai;Wei Liu;Wei Liu

  • Effect of interface oxides on shear properties of hot-rolled stainless steel clad plate

    Unknown

  • Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.

    Siming Chen;Mengya Liao;Mingchu Tang;Jiang Wu

  • Integration of III-V lasers on Si for Si photonics

    Mingchu Tang;Jae-Seong Park;Zhechao Wang;Siming Chen

  • Room-temperature 1.6-μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer

    H. Y. Liu;M. J. Steer;T. J. Badcock;D. J. Mowbray

  • InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates

    A. D. Lee;Qi Jiang;Mingchu Tang;Yunyan Zhang

Frequent Co-Authors

Jiang Wu
Jiang Wu University of Electronic Science and Technology of China
Mark Hopkinson
Mark Hopkinson University of Sheffield
Alwyn J. Seeds
Alwyn J. Seeds University College London
Ana M. Sanchez
Ana M. Sanchez University of Warwick
M. S. Skolnick
M. S. Skolnick University of Sheffield
Gregory J. Salamo
Gregory J. Salamo University of Arkansas at Fayetteville
Ian H. White
Ian H. White University of Bath
Richard V. Penty
Richard V. Penty University of Cambridge
Zhengxiao Guo
Zhengxiao Guo University of Hong Kong
Ivan P. Parkin
Ivan P. Parkin University College London

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