World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
59
Citations
13333
World Ranking
1749
National Ranking
84

Materials Science

D-Index
59
Citations
13578
World Ranking
7330
National Ranking
290

Overview

Huiyun Liu is affiliated with University College London in the United Kingdom. Their research spans primarily across the fields of Engineering and Physics and Astronomy, with a significant focus on Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Materials Chemistry, Biomedical Engineering, and Renewable Energy, Sustainability and the Environment.

The scientist's work covers a variety of topics, including:

  • Photonic and Optical Devices
  • Semiconductor Quantum Structures and Devices
  • Semiconductor Lasers and Optical Devices
  • Nanowire Synthesis and Applications
  • Advanced Photocatalysis Techniques
  • Photonic Crystals and Applications
  • Advanced oxidation water treatment

Liu has published extensively, with frequent contributions to the following venues:

  • Journal of Physics D Applied Physics
  • Chemical Engineering Journal
  • arXiv (Cornell University)
  • SSRN Electronic Journal
  • Optics Express

Several of their recent papers include:

  • Polypyrrole coated molybdenum disulfide composites as adsorbent for enhanced removal of Cr(VI) in aqueous solutions by adsorption combined with reduction, 2020, Chemical Engineering Journal
  • Anchoring CuFe2O4 nanoparticles into N-doped carbon nanosheets for peroxymonosulfate activation: Built-in electric field dominated radical and non-radical process, 2021, Chemical Engineering Journal
  • Construction of dual S-scheme Ag2CO3/Bi4O5I2/g-C3N4 heterostructure photocatalyst with enhanced visible-light photocatalytic degradation for tetracycline, 2022, Chemical Engineering Journal
  • Few-layer graphitic carbon nitride nanosheet with controllable functionalization as an effective metal-free activator for peroxymonosulfate photocatalytic activation: Role of the energy band bending, 2020, Chemical Engineering Journal
  • Constructing a plasma-based Schottky heterojunction for near-infrared-driven photothermal synergistic water disinfection: Synergetic effects and antibacterial mechanisms, 2021, Chemical Engineering Journal

Frequent collaborators in Huiyun Liu's research include Mingchu Tang, Siming Chen, A.J. Seeds, Huiwen Deng, and Hui Jia.

Best Publications

  • Electrically pumped continuous-wave III–V quantum dot lasers on silicon

    Siming Chen;Wei Li;Jiang Wu;Qi Jiang

  • Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate

    Huiyun Liu;Ting Wang;Qi Jiang;Richard Hogg

  • Classical aspects in above-threshold ionization with a midinfrared strong laser field.

    W. Quan;Z. Lin;M. Wu;H. Kang

  • 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates.

    Ting Wang;Huiyun Liu;Andrew Lee;Francesca Pozzi

  • Long lifetimes of quantum-dot intersublevel transitions in the terahertz range

    E. A. Zibik;E. A. Zibik;Thomas Grange;Thomas Grange;B. A. Carpenter;N. E. Porter

  • Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon.

    Jeppe V. Holm;Henrik I. Jørgensen;Peter Krogstrup;Jesper Nygård

  • Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

    Jiang Wu;Siming Chen;Alwyn Seeds;Huiyun Liu

  • Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

    H. Y. Liu;M. Hopkinson;C. N. Harrison;M. J. Steer

  • III–V nanowires and nanowire optoelectronic devices

    Yunyan Zhang;Jiang Wu;Martin Aagesen;Huiyun Liu

  • Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.

    Andrew Lee;Qi Jiang;Mingchu Tang;Alwyn Seeds

  • Nuclear Spin Switch in Semiconductor Quantum Dots

    A. I. Tartakovskii;T. Wright;A. Russell;V. I. Falko

  • Fast optical preparation, control, and readout of a single quantum dot spin.

    A. J. Ramsay;S. J. Boyle;R. S. Kolodka;José Brás Barreto de Oliveira;José Brás Barreto de Oliveira

  • Mode structure of the L3 photonic crystal cavity

    A. R. A. Chalcraft;S. Lam;D. O'Brien;T. F. Krauss

  • Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

    H. Y. Liu;M. J. Steer;T. J. Badcock;D. J. Mowbray

  • 1.3 µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

    I.R. Sellers;H.Y. Liu;K.M. Groom;D.T. Childs

  • 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers

    Mingchu Tang;Siming Chen;Jiang Wu;Qi Jiang

  • High Detectivity and Transparent Few‐Layer MoS 2 /Glassy‐Graphene Heterostructure Photodetectors

    Hao Xu;Xiaoyu Han;Xiao Dai;Wei Liu;Wei Liu

  • Effect of interface oxides on shear properties of hot-rolled stainless steel clad plate

    Unknown

  • Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.

    Siming Chen;Mengya Liao;Mingchu Tang;Jiang Wu

  • Integration of III-V lasers on Si for Si photonics

    Mingchu Tang;Jae-Seong Park;Zhechao Wang;Siming Chen

  • Room-temperature 1.6-μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer

    H. Y. Liu;M. J. Steer;T. J. Badcock;D. J. Mowbray

  • InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates

    A. D. Lee;Qi Jiang;Mingchu Tang;Yunyan Zhang

Frequent Co-Authors

Jiang Wu
Jiang Wu University of Electronic Science and Technology of China
Mark Hopkinson
Mark Hopkinson University of Sheffield
Alwyn J. Seeds
Alwyn J. Seeds University College London
Ana M. Sanchez
Ana M. Sanchez University of Warwick
M. S. Skolnick
M. S. Skolnick University of Sheffield
Gregory J. Salamo
Gregory J. Salamo University of Arkansas at Fayetteville
Ian H. White
Ian H. White University of Bath
Richard V. Penty
Richard V. Penty University of Cambridge
Zhengxiao Guo
Zhengxiao Guo University of Hong Kong
Ivan P. Parkin
Ivan P. Parkin University College London

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