P. K. Bhattacharya mainly investigates Optoelectronics, Quantum dot, Quantum dot laser, Semiconductor laser theory and Gallium arsenide. His Optoelectronics study integrates concerns from other disciplines, such as Molecular beam epitaxy and Optics. The Quantum dot study combines topics in areas such as Photodetector, Absorption and Photoluminescence.
His Quantum dot laser research integrates issues from Silicon, Modulation and Ground state. His studies deal with areas such as Tunnel injection and Excited state, Atomic physics as well as Semiconductor laser theory. His Heterojunction study is concerned with the larger field of Condensed matter physics.
P. K. Bhattacharya spends much of his time researching Optoelectronics, Quantum dot, Gallium arsenide, Quantum well and Heterojunction. The concepts of his Optoelectronics study are interwoven with issues in Molecular beam epitaxy and Laser, Optics. The various areas that P. K. Bhattacharya examines in his Quantum dot study include Photoluminescence, Photodetector, Dark current and Condensed matter physics, Quantum tunnelling.
His Gallium arsenide research incorporates elements of Field-effect transistor and Photodiode. His Quantum well research is multidisciplinary, relying on both Exciton and Atomic physics. P. K. Bhattacharya has researched Heterojunction in several fields, including Heterojunction bipolar transistor and Bipolar junction transistor.
His scientific interests lie mostly in Optoelectronics, Quantum dot, Quantum dot laser, Laser and Semiconductor laser theory. His Optoelectronics research includes elements of Quantum well, Molecular beam epitaxy and Optics. His work deals with themes such as Electron and Blue laser, which intersect with Quantum well.
His Quantum dot research is multidisciplinary, incorporating perspectives in Photoluminescence, Heterojunction, Dark current, Photonic crystal and Quantum tunnelling. P. K. Bhattacharya studied Quantum dot laser and Silicon that intersect with Quantum point contact and Nanowire. His Semiconductor laser theory study incorporates themes from Condensed matter physics, Circular polarization, Lasing threshold, Vertical-cavity surface-emitting laser and Optical polarization.
His main research concerns Optoelectronics, Quantum dot, Quantum dot laser, Semiconductor laser theory and Gallium arsenide. He has included themes like Quantum well, Laser and Molecular beam epitaxy in his Optoelectronics study. His research integrates issues of Photodetector, Photonic crystal, Optics, Terahertz radiation and Laser linewidth in his study of Quantum dot.
His studies in Quantum dot laser integrate themes in fields like Tunnel injection, Amorphous solid, Heterojunction and Silicon. His Semiconductor laser theory research is multidisciplinary, incorporating elements of Optical polarization, Circular polarization and Atomic physics. His Gallium arsenide research includes themes of Duty cycle, Semiconductor, Heat transfer, Measure and Charge-coupled device.
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Quasiperiodic GaAs-AlAs Heterostructures
R. Merlin;K. Bajema;Roy Clarke;F. Y. Juang.
Physical Review Letters (1985)
Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0
B. Das;D. C. Miller;S. Datta;R. Reifenberger.
Physical Review B (1989)
Far-infrared photoconductivity in self-organized InAs quantum dots
J. Phillips;K. Kamath;P. Bhattacharya.
Applied Physics Letters (1998)
Rapid carrier relaxation in In 0.4 Ga 0.6 A s / G a A s quantum dots characterized by differential transmission spectroscopy
T. S. Sosnowski;T. B. Norris;H. Jiang;J. Singh.
Physical Review B (1998)
The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers
S. Fathpour;Z. Mi;P. Bhattacharya;A. R. Kovsh.
Applied Physics Letters (2004)
QUANTUM DOT OPTO-ELECTRONIC DEVICES
P. Bhattacharya;S. Ghosh;A. D. Stiff-Roberts.
Annual Review of Materials Research (2004)
Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers
K. Kamath;P. Bhattacharya;T. Sosnowski;T. Norris.
Electronics Letters (1996)
Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature
P. Bhattacharya;X. H. Su;S. Chakrabarti;G. Ariyawansa.
Applied Physics Letters (2005)
Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers
P. Bhattacharya;S. Ghosh;S. Pradhan;J. Singh.
IEEE Journal of Quantum Electronics (2003)
Electrical spin injection and threshold reduction in a semiconductor laser.
M. Holub;J. Shin;D. Saha;P. Bhattacharya.
Physical Review Letters (2007)
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