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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
84
Citations
24888
World Ranking
416
National Ranking
196

Overview

Pallab Bhattacharya is affiliated with the University of Michigan-Ann Arbor in the United States. Their research spans multiple subfields of physics and engineering, focusing predominantly on semiconductor materials and devices.

The primary areas of study connected to their work include:

  • Condensed Matter Physics
  • Biomedical Engineering
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Bhattacharya's research topics display a strong emphasis on semiconductor materials and nanostructures. Notable thematic focuses include:

  • GaN-based semiconductor devices and materials
  • Nanowire Synthesis and Applications
  • Ga2O3 and related materials
  • Semiconductor Quantum Structures and Devices
  • ZnO doping and properties
  • Cerebrovascular and Carotid Artery Diseases
  • Cloud Computing and Resource Management

The scientist's frequent collaborators reflect active engagement in interdisciplinary research. Their key coauthors are:

  • Anthony Aiello
  • Zetian Mi
  • Debabrata Das
  • Yuanpeng Wu
  • Aishika Datta

Bhattacharya has published extensively in various scientific venues, with repeated contributions to:

  • arXiv (Cornell University)
  • Annals of Oncology
  • Applied Physics Letters
  • Journal of Luminescence
  • ACS Applied Materials & Interfaces

Among their published papers are the following representative works:

  • Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide-Bandgap Semiconductors, 2020, Advanced Electronic Materials
  • Deep ultraviolet monolayer GaN/AlN disk-in-nanowire array photodiode on silicon, 2020, Applied Physics Letters
  • TPP: Transparent Page Placement for CXL-Enabled Tiered-Memory, 2022, arXiv (Cornell University)
  • Excitation dependent and time resolved photoluminescence of β-Ga2O3, β-(Ga0.955Al0.045)2O3 and β-(Ga0.91In0.09)2O3 epitaxial layers grown by pulsed laser deposition, 2022, Journal of Luminescence
  • Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications, 2023, Applied Physics Letters

Bhattacharya has contributed to book literature, with a publication in 2024 titled Comprehensive Semiconductor Science and Technology, published by Elsevier BV.

Best Publications

  • Quasiperiodic GaAs-AlAs Heterostructures

    R. Merlin;K. Bajema;Roy Clarke;F. Y. Juang

  • Semiconductor Optoelectronic Devices

    Pallab Bhattacharya

  • Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy.

    Wei Guo;Meng Zhang;Animesh Banerjee;Pallab Bhattacharya

  • Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation

    J. Urayama;T. B. Norris;J. Singh;P. Bhattacharya

  • Magnetic and electrical properties of single-phase multiferroic BiFeO3

    Aswini K. Pradhan;Kai Zhang;D. Hunter;J.B. Dadson

  • Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0

    B. Das;D. C. Miller;S. Datta;R. Reifenberger

  • Far-infrared photoconductivity in self-organized InAs quantum dots

    J. Phillips;K. Kamath;P. Bhattacharya

  • The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers

    S. Fathpour;Z. Mi;P. Bhattacharya;A. R. Kovsh

  • Rapid carrier relaxation in In 0.4 Ga 0.6 A s / G a A s quantum dots characterized by differential transmission spectroscopy

    T. S. Sosnowski;T. B. Norris;H. Jiang;J. Singh

  • Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime

    Paul R. Berger;Kevin Chang;Pallab Bhattacharya;Jasprit Singh

  • Structural and multiferroic properties of La-modified BiFeO3 ceramics

    S. R. Das;R. N. P. Choudhary;P. Bhattacharya;R. S. Katiyar

  • QUANTUM DOT OPTO-ELECTRONIC DEVICES

    P. Bhattacharya;S. Ghosh;A. D. Stiff-Roberts

  • Self-assembled InAs-GaAs quantum-dot intersubband detectors

    J. Phillips;P. Bhattacharya;S.W. Kennerly;D.W. Beekman

  • Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers

    K. Kamath;P. Bhattacharya;T. Sosnowski;T. Norris

  • Spin-polarized light-emitting diodes and lasers

    M Holub;P Bhattacharya

  • Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature

    P. Bhattacharya;X. H. Su;S. Chakrabarti;G. Ariyawansa

  • Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire

    Saniya Deshpande;Junseok Heo;Junseok Heo;Ayan Das;Pallab Bhattacharya

  • Raman Scattering Studies in Dilute Magnetic Semiconductor Zn(1-x)Co(x)O

    K. Samanta;P. Bhattacharya;R. S. Katiyar;W. Iwamoto

  • Electrical spin injection and threshold reduction in a semiconductor laser.

    M. Holub;J. Shin;D. Saha;P. Bhattacharya

  • Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector

    A.D. Stiff;S. Krishna;P. Bhattacharya;S.W. Kennerly

  • Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers

    P. Bhattacharya;S. Ghosh;S. Pradhan;J. Singh

  • Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser

    Ayan Das;Junseok Heo;Marc Jankowski;Wei Guo

  • High-speed 1.3μm tunnel injection quantum-dot lasers

    Z. Mi;P. Bhattacharya;S. Fathpour

  • Solid State Electrically Injected Exciton-Polariton Laser

    Pallab Bhattacharya;Bo Xiao;Ayan Das;Sishir Bhowmick

  • Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

    M. Zhang;P. Bhattacharya;J. Singh;J. Hinckley

  • Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors

    B. Kochman;A.D. Stiff-Roberts;S. Chakrabarti;J.D. Phillips

  • Statement of intent for Journal of Physics D: Applied Physics

    Pallab Bhattacharya

Frequent Co-Authors

Jasprit Singh
Jasprit Singh University of Michigan–Ann Arbor
Boon S. Ooi
Boon S. Ooi King Abdullah University of Science and Technology
Sanjay Krishna
Sanjay Krishna The Ohio State University
Weidong Zhou
Weidong Zhou The University of Texas at Arlington
Zetian Mi
Zetian Mi University of Michigan–Ann Arbor
Tien Khee Ng
Tien Khee Ng King Abdullah University of Science and Technology
Jamie D. Phillips
Jamie D. Phillips University of Delaware
Jian Xu
Jian Xu Pennsylvania State University
Theodore B. Norris
Theodore B. Norris University of Michigan–Ann Arbor
Albert Chin
Albert Chin National Yang Ming Chiao Tung University

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