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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
84
Citations
24888
World Ranking
416
National Ranking
197

Pallab Bhattacharya publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Pallab Bhattacharya sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 1,019 publications — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Pallab Bhattacharya D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Pallab Bhattacharya sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 84 D-Index — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Pallab Bhattacharya is affiliated with the University of Michigan-Ann Arbor in the United States. Their research spans multiple subfields of physics and engineering, focusing predominantly on semiconductor materials and devices.

The primary areas of study connected to their work include:

  • Condensed Matter Physics
  • Biomedical Engineering
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Bhattacharya's research topics display a strong emphasis on semiconductor materials and nanostructures. Notable thematic focuses include:

  • GaN-based semiconductor devices and materials
  • Nanowire Synthesis and Applications
  • Ga2O3 and related materials
  • Semiconductor Quantum Structures and Devices
  • ZnO doping and properties
  • Cerebrovascular and Carotid Artery Diseases
  • Cloud Computing and Resource Management

The scientist's frequent collaborators reflect active engagement in interdisciplinary research. Their key coauthors are:

  • Anthony Aiello
  • Zetian Mi
  • Debabrata Das
  • Yuanpeng Wu
  • Aishika Datta

Bhattacharya has published extensively in various scientific venues, with repeated contributions to:

  • arXiv (Cornell University)
  • Annals of Oncology
  • Applied Physics Letters
  • Journal of Luminescence
  • ACS Applied Materials & Interfaces

Among their published papers are the following representative works:

  • Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide-Bandgap Semiconductors, 2020, Advanced Electronic Materials
  • Deep ultraviolet monolayer GaN/AlN disk-in-nanowire array photodiode on silicon, 2020, Applied Physics Letters
  • TPP: Transparent Page Placement for CXL-Enabled Tiered-Memory, 2022, arXiv (Cornell University)
  • Excitation dependent and time resolved photoluminescence of β-Ga2O3, β-(Ga0.955Al0.045)2O3 and β-(Ga0.91In0.09)2O3 epitaxial layers grown by pulsed laser deposition, 2022, Journal of Luminescence
  • Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications, 2023, Applied Physics Letters

Bhattacharya has contributed to book literature, with a publication in 2024 titled Comprehensive Semiconductor Science and Technology, published by Elsevier BV.

Best Publications

  • Quasiperiodic GaAs-AlAs Heterostructures

    R. Merlin;K. Bajema;Roy Clarke;F. Y. Juang

  • Semiconductor Optoelectronic Devices

    Pallab Bhattacharya

  • Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy.

    Wei Guo;Meng Zhang;Animesh Banerjee;Pallab Bhattacharya

  • Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation

    J. Urayama;T. B. Norris;J. Singh;P. Bhattacharya

  • Magnetic and electrical properties of single-phase multiferroic BiFeO3

    Aswini K. Pradhan;Kai Zhang;D. Hunter;J.B. Dadson

  • Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0

    B. Das;D. C. Miller;S. Datta;R. Reifenberger

  • Far-infrared photoconductivity in self-organized InAs quantum dots

    J. Phillips;K. Kamath;P. Bhattacharya

  • The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers

    S. Fathpour;Z. Mi;P. Bhattacharya;A. R. Kovsh

  • Rapid carrier relaxation in In 0.4 Ga 0.6 A s / G a A s quantum dots characterized by differential transmission spectroscopy

    T. S. Sosnowski;T. B. Norris;H. Jiang;J. Singh

  • Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime

    Paul R. Berger;Kevin Chang;Pallab Bhattacharya;Jasprit Singh

  • Structural and multiferroic properties of La-modified BiFeO3 ceramics

    S. R. Das;R. N. P. Choudhary;P. Bhattacharya;R. S. Katiyar

  • QUANTUM DOT OPTO-ELECTRONIC DEVICES

    P. Bhattacharya;S. Ghosh;A. D. Stiff-Roberts

  • Self-assembled InAs-GaAs quantum-dot intersubband detectors

    J. Phillips;P. Bhattacharya;S.W. Kennerly;D.W. Beekman

  • Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers

    K. Kamath;P. Bhattacharya;T. Sosnowski;T. Norris

  • Spin-polarized light-emitting diodes and lasers

    M Holub;P Bhattacharya

  • Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature

    P. Bhattacharya;X. H. Su;S. Chakrabarti;G. Ariyawansa

  • Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire

    Saniya Deshpande;Junseok Heo;Junseok Heo;Ayan Das;Pallab Bhattacharya

  • Raman Scattering Studies in Dilute Magnetic Semiconductor Zn(1-x)Co(x)O

    K. Samanta;P. Bhattacharya;R. S. Katiyar;W. Iwamoto

  • Electrical spin injection and threshold reduction in a semiconductor laser.

    M. Holub;J. Shin;D. Saha;P. Bhattacharya

  • Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector

    A.D. Stiff;S. Krishna;P. Bhattacharya;S.W. Kennerly

  • Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers

    P. Bhattacharya;S. Ghosh;S. Pradhan;J. Singh

  • Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser

    Ayan Das;Junseok Heo;Marc Jankowski;Wei Guo

  • High-speed 1.3μm tunnel injection quantum-dot lasers

    Z. Mi;P. Bhattacharya;S. Fathpour

  • Solid State Electrically Injected Exciton-Polariton Laser

    Pallab Bhattacharya;Bo Xiao;Ayan Das;Sishir Bhowmick

  • Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

    M. Zhang;P. Bhattacharya;J. Singh;J. Hinckley

  • Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors

    B. Kochman;A.D. Stiff-Roberts;S. Chakrabarti;J.D. Phillips

  • Statement of intent for Journal of Physics D: Applied Physics

    Pallab Bhattacharya

Frequent Co-Authors

Jasprit Singh
Jasprit Singh University of Michigan–Ann Arbor
Boon S. Ooi
Boon S. Ooi King Abdullah University of Science and Technology
Weidong Zhou
Weidong Zhou The University of Texas at Arlington
Sanjay Krishna
Sanjay Krishna The Ohio State University
Alexey Kavokin
Alexey Kavokin Saint Petersburg State University
Tien Khee Ng
Tien Khee Ng King Abdullah University of Science and Technology
Zetian Mi
Zetian Mi University of Michigan–Ann Arbor
Jian Xu
Jian Xu Pennsylvania State University
Jamie D. Phillips
Jamie D. Phillips University of Delaware
Theodore B. Norris
Theodore B. Norris University of Michigan–Ann Arbor

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