D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 37 Citations 6,934 327 World Ranking 3243 National Ranking 1256

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

His primary scientific interests are in Optoelectronics, Molecular beam epitaxy, Quantum dot, Photoluminescence and Nanowire. His work carried out in the field of Optoelectronics brings together such families of science as Laser and Optics. His work deals with themes such as Crystal growth, Condensed matter physics and Laser linewidth, which intersect with Molecular beam epitaxy.

His Quantum dot study combines topics in areas such as Radiation, Heterojunction and Quantum dot laser. His Photoluminescence research is multidisciplinary, incorporating perspectives in Molecular physics, Doping and Molecular beam. His studies in Nanowire integrate themes in fields like Gallium nitride, Silicon, High-resolution transmission electron microscopy and Photon.

His most cited work include:

  • Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy. (390 citations)
  • Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime (219 citations)
  • Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire (164 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Quantum dot, Molecular beam epitaxy, Laser and Quantum dot laser. His research in Optoelectronics intersects with topics in Quantum well and Optics. Pallab Bhattacharya studied Quantum dot and Light-emitting diode that intersect with Diode and Quantum efficiency.

His work deals with themes such as Doping, Photoluminescence, Analytical chemistry and Molecular beam, which intersect with Molecular beam epitaxy. In his work, Dielectric is strongly intertwined with Polariton, which is a subfield of Laser. Pallab Bhattacharya combines subjects such as Tunnel injection, Quantum point contact and Differential gain with his study of Quantum dot laser.

He most often published in these fields:

  • Optoelectronics (68.22%)
  • Quantum dot (29.32%)
  • Molecular beam epitaxy (25.75%)

What were the highlights of his more recent work (between 2013-2021)?

  • Optoelectronics (68.22%)
  • Nanowire (15.89%)
  • Laser (22.47%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Optoelectronics, Nanowire, Laser, Quantum dot and Light-emitting diode. His study in Optoelectronics is interdisciplinary in nature, drawing from both Molecular beam epitaxy, Gallium nitride and Optics. His study with Molecular beam epitaxy involves better knowledge in Epitaxy.

His Nanowire study incorporates themes from Photonic integrated circuit, Heterojunction, Silicon photonics, Substrate and Photoluminescence. His Laser research incorporates themes from Polariton, Polarization, Atomic physics and Modulation. His biological study spans a wide range of topics, including Spectroscopy, Indium, Quantum dot laser and Absorption spectroscopy.

Between 2013 and 2021, his most popular works were:

  • An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination (54 citations)
  • High Performance InAs/ ${ m In}{0.53}{ m Ga}{0.23}{ m Al}_{0.24}{ m As}$ /InP Quantum Dot 1.55 $\mu{ m m}$ Tunnel Injection Laser (43 citations)
  • Red-Emitting ( (\lambda = 610) nm) In 0.51 Ga 0.49 N/GaN Disk-in-Nanowire Light Emitting Diodes on Silicon (32 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

Optoelectronics, Laser, Quantum dot, Nanowire and Diode are his primary areas of study. Pallab Bhattacharya has included themes like Gallium nitride, Molecular beam epitaxy and Spontaneous emission in his Optoelectronics study. Pallab Bhattacharya interconnects Color temperature, Chromaticity, Heterojunction and Phosphor in the investigation of issues within Molecular beam epitaxy.

The Laser study combines topics in areas such as Gain compression, Modulation, Polariton, Atomic physics and Wide-bandgap semiconductor. Pallab Bhattacharya frequently studies issues relating to Quantum dot laser and Quantum dot. In his research, Quantum efficiency is intimately related to Photoluminescence, which falls under the overarching field of Nanowire.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Semiconductor Optoelectronic Devices

Pallab Bhattacharya.
(1993)

998 Citations

Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy.

Wei Guo;Meng Zhang;Animesh Banerjee;Pallab Bhattacharya.
Nano Letters (2010)

543 Citations

Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime

Paul R. Berger;Kevin Chang;Pallab Bhattacharya;Jasprit Singh.
Applied Physics Letters (1988)

334 Citations

Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire

Saniya Deshpande;Junseok Heo;Junseok Heo;Ayan Das;Pallab Bhattacharya.
Nature Communications (2013)

231 Citations

Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser

Ayan Das;Junseok Heo;Marc Jankowski;Wei Guo.
Physical Review Letters (2011)

209 Citations

Solid State Electrically Injected Exciton-Polariton Laser

Pallab Bhattacharya;Bo Xiao;Ayan Das;Sishir Bhowmick.
Physical Review Letters (2013)

191 Citations

Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics.

Wei Guo;Meng Zhang;Pallab Bhattacharya;Junseok Heo.
Nano Letters (2011)

189 Citations

High-performance mid-infrared quantum dot infrared photodetectors

S. Chakrabarti;A. D. Stiff-Roberts;X. H. Su;Pallab K. Bhattacharya.
Journal of Physics D (2005)

177 Citations

InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon

Wei Guo;Animesh Banerjee;Pallab K. Bhattacharya;Boon S. Ooi.
Applied Physics Letters (2011)

177 Citations

Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition

Dipankar Biswas;N. Debbar;Pallab K. Bhattacharya;M. Razeghi.
Applied Physics Letters (1990)

176 Citations

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