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Electronics and Electrical Engineering
Taiwan
2022

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
11776
World Ranking
1668
National Ranking
18

Materials Science

D-Index
61
Citations
11908
World Ranking
6849
National Ranking
84

Albert Chin publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Albert Chin sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 473 publications — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Albert Chin D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Albert Chin sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 60 D-Index — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2022 - Research.com Electronics and Electrical Engineering in Taiwan Leader Award
  • 2011 - IEEE Fellow For contributions to high-K dielectrics and metal gate electrodes for complementary metal-oxide semiconductor

Overview

Albert Chin is affiliated with National Yang Ming Chiao Tung University in Taiwan, where their research primarily spans various engineering and materials science disciplines. Their work is situated at the intersection of semiconductor technology, thin-film transistors, and memory devices.

The scientist's main fields of study include:

  • Engineering
  • Materials Science

Within these areas, Chin's subfields of expertise focus on:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Biomedical Engineering
  • Biomaterials
  • Cellular and Molecular Neuroscience

Their research topics cover a range of advanced semiconductor and device technologies, including:

  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • Advanced Memory and Neural Computing
  • ZnO doping and properties
  • Ferroelectric and Negative Capacitance Devices
  • Nanowire Synthesis and Applications
  • Advancements in Semiconductor Devices and Circuit Design

Albert Chin has contributed to various scholarly publications, particularly in the following venues:

  • Nanomaterials
  • Journal of Nanoscience and Nanotechnology
  • Scientific Reports
  • IEEE Microwave and Wireless Components Letters
  • 2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE)

Some of their recent papers include:

  • High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence, 2020, Scientific Reports
  • Charge transport mechanism in the forming-free memristor based on silicon nitride, 2021, Scientific Reports
  • Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer, 2021, Nanomaterials
  • Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation, 2021, Nanomaterials
  • High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer, 2020, Nanomaterials

Albert Chin has collaborated frequently with several researchers, including:

  • V. A. Gritsenko
  • Te Jui Yen
  • Pheiroijam Pooja
  • Chien-Hung Wu
  • Kow-Ming Chang

Recognition of their professional achievements includes the IEEE Fellow award granted in 2011, awarded for contributions to high-K dielectrics and metal gate electrodes for complementary metal-oxide semiconductor technologies.

Best Publications

  • N-type Schottky barrier source/drain MOSFET using ytterbium silicide

    Shiyang Zhu;Jingde Chen;M.-F. Li;M.-F. Li;S.J. Lee

  • Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric

    M.F. Chang;P.T. Lee;S.P. McAlister;A. Chin

  • Electrical characteristics of high quality La 2 O 3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/

    Y.H. Wu;M.Y. Yang;A. Chin;W.J. Chen

  • High-density MIM capacitors using Al 2 O 3 and AlTiO x dielectrics

    S.B. Chen;C.H. Lai;A. Chin;J.C. Hsieh

  • Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

    Nan Wu;Qingchun Zhang;Chunxiang Zhu;Chia Chin Yeo

  • High quality La/sub 2/O/sub 3/ and Al/sub 2/O/sub 3/ gate dielectrics with equivalent oxide thickness 5-10 /spl Aring/

    A. Chin;Y.H. Wu;S.B. Chen;C.C. Liao

  • A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO 2 dielectrics

    Xiongfei Yu;Chunxiang Zhu;Hang Hu;A. Chin

  • Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

    Nan Wu;Qingchun Zhang;Chunxiang Zhu;D. S.H. Chan

  • Low‐Power High‐Performance Non‐Volatile Memory on a Flexible Substrate with Excellent Endurance

    Chun Hu Cheng;Fon Shan Yeh;Albert Chin

  • A TaN-HfO/sub 2/-Ge pMOSFET with NovelSiH/sub 4/ surface passivation

    Nan Wu;Qingchun Zhang;Chunxiang Zhu;D.S.H. Chan

  • Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High- $\kappa$ Gate Dielectric

    Chun Hu Cheng;Albert Chin

  • Improvement of voltage linearity in high-/spl kappa/ MIM capacitors using HfO/sub 2/-SiO/sub 2/ stacked dielectric

    Sun Jung Kim;Byung Jin Cho;Ming-Fu Li;Shi-Jin Ding

  • Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

    Chun-Hu Cheng;Albert Chin

  • High-Performance $hboxSrTiO_3$ MIM Capacitors for Analog Applications

    K.C. Chiang;Ching-Chien Huang;G.L. Chen;Wen Jauh Chen

  • Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate

    Shiyang Zhu;Rui Li;S.J. Lee;M.F. Li

  • High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric

    N.C. Su;S.J. Wang;A. Chin

  • Device and reliability of high-k Al/sub 2/O/sub 3/ gate dielectric with good mobility and low D/sub it/

    A. Chin;C.C. Liao;C.H. Lu;W.J. Chen

  • Quantum interference effects and spin-orbit interaction in quasi-one-dimensional wires and rings

    Ç Kurdak;A. M. Chang;Albert Chin;T. Y. Chang

  • Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

    Shiyang Zhu;H.Y. Yu;S.J. Whang;J.H. Chen

  • Deep levels and a possible D-X-Like center in molecular beam epitaxial In x Al 1-x As

    W-P. Hong;S. Dhar;P. K. Bhattacharya;A. Chin

Frequent Co-Authors

Chunxiang Zhu
Chunxiang Zhu National University of Singapore
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Ming-Fu Li
Ming-Fu Li Fudan University
Byung Jin Cho
Byung Jin Cho Chungbuk National University
D.S.H. Chan
D.S.H. Chan National University of Singapore
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
San-Yuan Chen
San-Yuan Chen National Yang Ming Chiao Tung University
Won Jong Yoo
Won Jong Yoo Sungkyunkwan University
Tony Low
Tony Low University of Minnesota
Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore

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