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Albert Chin
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Electronics and Electrical Engineering
Taiwan
2022

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 60 1668 1597 18 18 473 11776
Materials Science 61 6849 6618 84 83 474 11908

Albert Chin publications per year

The chart shows the history of publications by Albert Chin between 1986 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Albert Chin published across 40 years, from 1986 to 2025, averaging 12.9 papers a year. Output peaked at 46 publications in 2003. 9 of the 514 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 1986 to 2025. Vertical axis: number of publications, 0 to 46. Peak 46 publications in 2003. 1986: 1 publication 1987: 6 publications 1988: 4 publications 1989: 2 publications 1990: 3 publications 1991: 7 publications 1992: 8 publications 1993: 7 publications 1994: 6 publications 1995: 2 publications 1996: 10 publications 1997: 7 publications 1998: 4 publications 1999: 9 publications 2000: 11 publications 2001: 12 publications 2002: 19 publications 2003: 46 publications 2004: 41 publications 2005: 40 publications 2006: 35 publications 2007: 33 publications 2008: 23 publications 2009: 16 publications 2010: 28 publications 2011: 22 publications 2012: 15 publications 2013: 15 publications 2014: 9 publications 2015: 5 publications 2016: 10 publications 2017: 8 publications 2018: 5 publications 2019: 12 publications 2020: 9 publications 2021: 9 publications 2022: 2 publications 2023: 4 publications 2024: 3 publications 2025: 6 publications
1986 2025

514 publications in total across all disciplines

View publications per year as a table
Albert Chin: publications per year, 1986 to 2025
Year Publications
1986 1
1987 6
1988 4
1989 2
1990 3
1991 7
1992 8
1993 7
1994 6
1995 2
1996 10
1997 7
1998 4
1999 9
2000 11
2001 12
2002 19
2003 46
2004 41
2005 40
2006 35
2007 33
2008 23
2009 16
2010 28
2011 22
2012 15
2013 15
2014 9
2015 5
2016 10
2017 8
2018 5
2019 12
2020 9
2021 9
2022 2
2023 4
2024 3
2025 6
Total 514
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Albert Chin publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Albert Chin sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 454–473 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 473 publications — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111 473
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Albert Chin D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Albert Chin sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 60 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 60 D-Index — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103 60
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Research.com Recognitions

  • 2022 - Research.com Electronics and Electrical Engineering in Taiwan Leader Award
  • 2011 - IEEE Fellow For contributions to high-K dielectrics and metal gate electrodes for complementary metal-oxide semiconductor

Overview

Albert Chin is affiliated with National Yang Ming Chiao Tung University in Taiwan, where their research primarily spans various engineering and materials science disciplines. Their work is situated at the intersection of semiconductor technology, thin-film transistors, and memory devices.

The scientist's main fields of study include:

  • Engineering
  • Materials Science

Within these areas, Chin's subfields of expertise focus on:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Biomedical Engineering
  • Biomaterials
  • Cellular and Molecular Neuroscience

Their research topics cover a range of advanced semiconductor and device technologies, including:

  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • Advanced Memory and Neural Computing
  • ZnO doping and properties
  • Ferroelectric and Negative Capacitance Devices
  • Nanowire Synthesis and Applications
  • Advancements in Semiconductor Devices and Circuit Design

Albert Chin has contributed to various scholarly publications, particularly in the following venues:

  • Nanomaterials
  • Journal of Nanoscience and Nanotechnology
  • Scientific Reports
  • IEEE Microwave and Wireless Components Letters
  • 2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE)

Some of their recent papers include:

  • High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence, 2020, Scientific Reports
  • Charge transport mechanism in the forming-free memristor based on silicon nitride, 2021, Scientific Reports
  • Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer, 2021, Nanomaterials
  • Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation, 2021, Nanomaterials
  • High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer, 2020, Nanomaterials

Albert Chin has collaborated frequently with several researchers, including:

  • V. A. Gritsenko
  • Te Jui Yen
  • Pheiroijam Pooja
  • Chien-Hung Wu
  • Kow-Ming Chang

Recognition of their professional achievements includes the IEEE Fellow award granted in 2011, awarded for contributions to high-K dielectrics and metal gate electrodes for complementary metal-oxide semiconductor technologies.

Best Publications

  • N-type Schottky barrier source/drain MOSFET using ytterbium silicide

    Shiyang Zhu;Jingde Chen;M.-F. Li;M.-F. Li;S.J. Lee

  • Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric

    M.F. Chang;P.T. Lee;S.P. McAlister;A. Chin

  • Electrical characteristics of high quality La 2 O 3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/

    Y.H. Wu;M.Y. Yang;A. Chin;W.J. Chen

  • High-density MIM capacitors using Al 2 O 3 and AlTiO x dielectrics

    S.B. Chen;C.H. Lai;A. Chin;J.C. Hsieh

  • Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

    Nan Wu;Qingchun Zhang;Chunxiang Zhu;Chia Chin Yeo

  • High quality La/sub 2/O/sub 3/ and Al/sub 2/O/sub 3/ gate dielectrics with equivalent oxide thickness 5-10 /spl Aring/

    A. Chin;Y.H. Wu;S.B. Chen;C.C. Liao

  • A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO 2 dielectrics

    Xiongfei Yu;Chunxiang Zhu;Hang Hu;A. Chin

  • Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

    Nan Wu;Qingchun Zhang;Chunxiang Zhu;D. S.H. Chan

  • Low‐Power High‐Performance Non‐Volatile Memory on a Flexible Substrate with Excellent Endurance

    Chun Hu Cheng;Fon Shan Yeh;Albert Chin

  • A TaN-HfO/sub 2/-Ge pMOSFET with NovelSiH/sub 4/ surface passivation

    Nan Wu;Qingchun Zhang;Chunxiang Zhu;D.S.H. Chan

  • Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High- $\kappa$ Gate Dielectric

    Chun Hu Cheng;Albert Chin

  • Improvement of voltage linearity in high-/spl kappa/ MIM capacitors using HfO/sub 2/-SiO/sub 2/ stacked dielectric

    Sun Jung Kim;Byung Jin Cho;Ming-Fu Li;Shi-Jin Ding

  • Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

    Chun-Hu Cheng;Albert Chin

  • High-Performance $hboxSrTiO_3$ MIM Capacitors for Analog Applications

    K.C. Chiang;Ching-Chien Huang;G.L. Chen;Wen Jauh Chen

  • Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate

    Shiyang Zhu;Rui Li;S.J. Lee;M.F. Li

  • High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric

    N.C. Su;S.J. Wang;A. Chin

  • Device and reliability of high-k Al/sub 2/O/sub 3/ gate dielectric with good mobility and low D/sub it/

    A. Chin;C.C. Liao;C.H. Lu;W.J. Chen

  • Quantum interference effects and spin-orbit interaction in quasi-one-dimensional wires and rings

    Ç Kurdak;A. M. Chang;Albert Chin;T. Y. Chang

  • Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

    Shiyang Zhu;H.Y. Yu;S.J. Whang;J.H. Chen

  • Deep levels and a possible D-X-Like center in molecular beam epitaxial In x Al 1-x As

    W-P. Hong;S. Dhar;P. K. Bhattacharya;A. Chin

Frequent Co-Authors

Chunxiang Zhu
Chunxiang Zhu National University of Singapore
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Ming-Fu Li
Ming-Fu Li Fudan University
Byung Jin Cho
Byung Jin Cho Chungbuk National University
D.S.H. Chan
D.S.H. Chan National University of Singapore
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
San-Yuan Chen
San-Yuan Chen National Yang Ming Chiao Tung University
Won Jong Yoo
Won Jong Yoo Sungkyunkwan University
Tony Low
Tony Low University of Minnesota
Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore

External Links

Personal website of Albert Chin Google Scholar page

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