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D.S.H. Chan

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Engineering and Technology 32 9544 9177 115 113 126 4960

D.S.H. Chan publications per year

The chart shows the history of publications by D.S.H. Chan between 1975 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. D.S.H. Chan published across 52 years, from 1975 to 2026, averaging 2.6 papers a year. Output peaked at 19 publications in 2004. 2 of the 136 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1975 to 2026. Vertical axis: number of publications, 0 to 19. Peak 19 publications in 2004. 1975: 1 publication 1976: 3 publications 1977: 0 publications 1978: 0 publications 1979: 0 publications 1980: 0 publications 1981: 0 publications 1982: 0 publications 1983: 1 publication 1984: 3 publications 1985: 0 publications 1986: 1 publication 1987: 2 publications 1988: 1 publication 1989: 0 publications 1990: 0 publications 1991: 1 publication 1992: 1 publication 1993: 2 publications 1994: 5 publications 1995: 6 publications 1996: 7 publications 1997: 7 publications 1998: 2 publications 1999: 7 publications 2000: 3 publications 2001: 3 publications 2002: 5 publications 2003: 14 publications 2004: 19 publications 2005: 10 publications 2006: 9 publications 2007: 4 publications 2008: 8 publications 2009: 5 publications 2010: 1 publication 2011: 1 publication 2012: 0 publications 2013: 0 publications 2014: 0 publications 2015: 1 publication 2016: 0 publications 2017: 0 publications 2018: 0 publications 2019: 0 publications 2020: 0 publications 2021: 1 publication 2022: 0 publications 2023: 0 publications 2024: 0 publications 2025: 1 publication 2026: 1 publication
1975 2026

136 publications in total across all disciplines

View publications per year as a table
D.S.H. Chan: publications per year, 1975 to 2026
Year Publications
1975 1
1976 3
1977 0
1978 0
1979 0
1980 0
1981 0
1982 0
1983 1
1984 3
1985 0
1986 1
1987 2
1988 1
1989 0
1990 0
1991 1
1992 1
1993 2
1994 5
1995 6
1996 7
1997 7
1998 2
1999 7
2000 3
2001 3
2002 5
2003 14
2004 19
2005 10
2006 9
2007 4
2008 8
2009 5
2010 1
2011 1
2012 0
2013 0
2014 0
2015 1
2016 0
2017 0
2018 0
2019 0
2020 0
2021 1
2022 0
2023 0
2024 0
2025 1
2026 1
Total 136
Download as CSV

D.S.H. Chan publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where D.S.H. Chan sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: publications, 38–47 to 804+. Vertical axis: number of scientists, 0 to 457. Most scientists, 457, have 148–157 publications. The last bar groups every scientist with 804 publications or more. The highlighted bar, 118–127 publications, is where this scientist sits. 38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38–47 publications 804+

This scientist: 126 publications — 17th percentile

17% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

View publications distribution as a table
Number of Engineering and Technology scientists by publication count, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
Publications Scientists This scientist
38–47 20
48–57 35
58–67 96
68–77 135
78–87 190
88–97 259
98–107 283
108–117 369
118–127 341 126
128–137 386
138–147 372
148–157 457
158–167 415
168–177 407
178–187 421
188–197 378
198–207 403
208–217 317
218–227 346
228–237 321
238–247 260
248–257 280
258–267 240
268–277 214
278–287 242
288–297 203
298–307 166
308–317 154
318–327 175
328–337 159
338–347 99
348–357 131
358–367 106
368–377 118
378–387 97
388–397 108
398–407 82
408–417 71
418–427 64
428–437 55
438–447 54
448–457 60
458–467 47
468–477 40
478–487 30
488–497 29
498–507 38
508–517 40
518–527 32
528–537 23
538–547 28
548–557 23
558–567 19
568–577 16
578–587 17
588–597 18
598–607 22
608–617 15
618–627 9
628–637 11
638–647 21
648–657 12
658–667 9
668–677 11
678–687 9
688–697 6
698–707 14
708–717 7
718–727 8
728–737 10
738–747 9
748–757 5
758–767 5
768–777 11
778–787 7
788–797 2
798–803 4
804+ 100
Download as CSV

D.S.H. Chan D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where D.S.H. Chan sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: D-Index, 30 to 107+. Vertical axis: number of scientists, 0 to 426. Most scientists, 426, have 42 D-Index. The last bar groups every scientist with 107 D-Index or more. The highlighted bar, 32 D-Index, is where this scientist sits. 30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 32 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

View D-Index distribution as a table
Number of Engineering and Technology scientists by D-index, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
D-Index Scientists This scientist
30 59
31 114
32 129 32
33 189
34 200
35 262
36 311
37 312
38 350
39 385
40 348
41 362
42 426
43 380
44 310
45 341
46 301
47 306
48 271
49 246
50 210
51 253
52 213
53 221
54 195
55 186
56 170
57 167
58 166
59 144
60 152
61 141
62 138
63 131
64 118
65 114
66 119
67 95
68 87
69 77
70 89
71 69
72 54
73 46
74 55
75 54
76 49
77 53
78 46
79 28
80 39
81 36
82 24
83 26
84 36
85 18
86 25
87 19
88 26
89 27
90 23
91 15
92 12
93 9
94 15
95 10
96 13
97 13
98 9
99 7
100 7
101 8
102 7
103 7
104 9
105 6
106 9
107+ 99
Download as CSV

Overview

D.S.H. Chan is a researcher affiliated with the National University of Singapore in Singapore. Their work primarily focuses on the field of Psychology, with a specialization in Social Psychology. The scholar's research interests include Stress and Burnout Research, which appears in multiple publications.

Chan's recent scholarly contributions include a paper titled EVALUACIÓN DE RIESGO DE DEPRESIÓN EN ESTUDIANTES UNIVERSITARIOS Y SU ASOCIACIÓN CON EL TRÁFICO VEHICULAR, published in 2025 in the journal Centros. This study addresses depression risk assessment in university students and explores its association with vehicular traffic.

Their network of frequent co-authors consists of:

  • Jonathan Salazar-Johnston
  • Luis Mendoza

Chan has published in the venue Centros, which is recognized as a platform for their research dissemination.

The main fields and subfields of study associated with Chan are:

  • Psychology
  • Social Psychology

Their principal research topics include:

  • Stress and Burnout Research

Best Publications

  • Polymer electronic memories: Materials, devices and mechanisms

    Qi-Dan Ling;Der-Jang Liaw;Chunxiang Zhu;Daniel Siu-Hung Chan

  • Analytical methods for the extraction of solar-cell single- and double-diode model parameters from I-V characteristics

    Unknown

  • A comparative study of extraction methods for solar cell model parameters

    Unknown

  • Synthesis and dynamic random access memory behavior of a functional polyimide.

    Qi-Dan Ling;Feng-Chyuan Chang;Yan Song;Chun-Xiang Zhu

  • Non‐Volatile Polymer Memory Device Based on a Novel Copolymer of N‐Vinylcarbazole and Eu‐Complexed Vinylbenzoate

    Qidan Ling;Yan Song;Shi J. Ding;Chunxiang Zhu

  • Polymer memories: Bistable electrical switching and device performance

    Qi-Dan Ling;Der-Jang Liaw;Eric Yeow-Hwee Teo;Chunxiang Zhu

  • Dynamic NBTI of PMOS transistors and its impact on device lifetime

    G. Chen;K.Y. Chuah;M.F. Li;D.S.H. Chan

  • A dynamic random access memory based on a conjugated copolymer containing electron-donor and -acceptor moieties.

    Qi-Dan Ling;Yan Song;Siew-Lay Lim;Eric Yeow-Hwee Teo

  • Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C60.

    Qi-Dan Ling;Siew-Lay Lim;Yan Song;Chun-Xiang Zhu

  • Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

    Nan Wu;Qingchun Zhang;Chunxiang Zhu;Chia Chin Yeo

  • Electrical Conductance Tuning and Bistable Switching in Poly(N-vinylcarbazole)-Carbon Nanotube Composite Films.

    Gang Liu;Qi-Dan Ling;Eric Yeow Hwee Teo;Chun-Xiang Zhu

  • Fermi pinning-induced thermal instability of metal-gate work functions

    H.Y. Yu;C. Ren;Yee-Chia Yeo;J.F. Kang

  • Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

    Nan Wu;Qingchun Zhang;Chunxiang Zhu;D. S.H. Chan

  • Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance

    Jing Hao Chen;Ying Qian Wang;Won Jong Yoo;Yee-Chia Yeo

  • A TaN-HfO/sub 2/-Ge pMOSFET with NovelSiH/sub 4/ surface passivation

    Nan Wu;Qingchun Zhang;Chunxiang Zhu;D.S.H. Chan

  • Conformation-Induced Electrical Bistability in Non-conjugated Polymers with Pendant Carbazole Moieties

    Siew Lay Lim;Qidan Ling;Eric Yeow Hwee Teo;Chun Xiang Zhu

  • Non-volatile WORM memory device based on an acrylate polymer with electron donating carbazole pendant groups

    E.Y.H. Teo;Q.D. Ling;Y. Song;Y.P. Tan

  • Performance breakthrough in 8 nm gate length Gate-All-Around nanowire transistors using metallic nanowire contacts

    Y. Jiang;T.Y. Liow;N. Singh;L.H. Tan

  • Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

    Shiyang Zhu;H.Y. Yu;S.J. Whang;J.H. Chen

  • Improvement in the hole collection of polymer solar cells by utilizing gold nanoparticle buffer layer

    S.W. Tong;C.F. Zhang;C.Y. Jiang;G. Liu

  • A direct method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan: planar junction configuration

    D.S.H. Chan;V.K.S. Ong;J.C.H. Phang

  • Wide memory window in graphene oxide charge storage nodes

    Shuai Wang;Jing Pu;Daniel S. H. Chan;Byung Jin Cho

  • RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications

    Shi-Jin Ding;Hang Hu;Chunxiang Zhu;Sun Jung Kim

  • Bistable electrical switching and write-once read-many-times memory effect in a donor-acceptor containing polyfluorene derivative and its carbon nanotube composites

    Gang Liu;Qi-Dan Ling;En-Tang Kang;Koon-Gee Neoh

  • Simple tandem organic photovoltaic cells for improved energy conversion efficiency

    Chunfu Zhang;Shi Wun Tong;Changyun Jiang;E. T. Kang

  • High-performance MIM capacitor using ALD high-k HfO 2 -Al 2 O 3 laminate dielectrics

    Shi-Jin Ding;Hang Hu;H.F. Lim;S.J. Kim

  • Electrical conductivity switching and memory effects in poly(N-vinylcarbazole) derivatives with pendant azobenzene chromophores and terminal electron acceptor moieties

    Gang Liu;Gang Liu;Bin Zhang;Yu Chen;Chun-Xiang Zhu

  • Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering

    J. F. Kang;H. Y. Yu;C. Ren;M.-F. Li

  • Electrically Bistable Thin-Film Device Based on PVK and GNPs Polymer Material

    Y. Song;Q.D. Ling;S.L. Lim;E.Y.H. Teo

  • Negative U traps in HfO/sub 2/ gate dielectrics and frequency dependence of dynamic BTI in MOSFETs

    C. Shen;M.F. Li;X.P. Wang;H.Y. Yu

Frequent Co-Authors

Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Chunxiang Zhu
Chunxiang Zhu National University of Singapore
Byung Jin Cho
Byung Jin Cho Chungbuk National University
Albert Chin
Albert Chin National Yang Ming Chiao Tung University
Ming-Fu Li
Ming-Fu Li Fudan University
Jinfeng Kang
Jinfeng Kang Peking University
Haoyong Yu
Haoyong Yu National University of Singapore
En-Tang Kang
En-Tang Kang National University of Singapore
Won Jong Yoo
Won Jong Yoo Sungkyunkwan University
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore

External Links

Personal website of D.S.H. Chan

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Best Scientists Citing D.S.H. Chan

Dim-Lee Kwong

Dim-Lee Kwong

National University of Singapore

Publications: 55

Chunxiang Zhu

Chunxiang Zhu

National University of Singapore

Publications: 50

Byung Jin Cho

Byung Jin Cho

Chungbuk National University

Publications: 39

Yee-Chia Yeo

Yee-Chia Yeo

National University of Singapore

Publications: 36

Ming-Fu Li

Ming-Fu Li

Fudan University

Publications: 32

Albert Chin

Albert Chin

National Yang Ming Chiao Tung University

Publications: 30

John Robertson

John Robertson

University of Cambridge

Publications: 20

Prashant Majhi

Prashant Majhi

Intel (United States)

Publications: 19

Byoung Hun Lee

Byoung Hun Lee

Pohang University of Science and Technology

Publications: 19

Ganesh S. Samudra

Ganesh S. Samudra

National University of Singapore

Publications: 18

Marco Fanciulli

Marco Fanciulli

University of Milano-Bicocca

Publications: 18

Sungjoo Lee

Sungjoo Lee

Sungkyunkwan University

Publications: 17

S. De Gendt

S. De Gendt

KU Leuven

Publications: 17

Ru Huang

Ru Huang

Peking University

Publications: 15

Sanjay K. Banerjee

Sanjay K. Banerjee

The University of Texas at Austin

Publications: 15

Won Jong Yoo

Won Jong Yoo

Sungkyunkwan University

Publications: 14

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