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S. De Gendt

S. De Gendt

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 59 1781 1707 41 38 516 11979

S. De Gendt publications per year

The chart shows the history of publications by S. De Gendt between 1995 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. S. De Gendt published across 32 years, from 1995 to 2026, averaging 21 papers a year. Output peaked at 49 publications in 2006. 32 of the 672 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 1995 to 2026. Vertical axis: number of publications, 0 to 49. Peak 49 publications in 2006. 1995: 4 publications 1996: 2 publications 1997: 2 publications 1998: 7 publications 1999: 7 publications 2000: 6 publications 2001: 8 publications 2002: 16 publications 2003: 14 publications 2004: 18 publications 2005: 35 publications 2006: 49 publications 2007: 41 publications 2008: 35 publications 2009: 30 publications 2010: 31 publications 2011: 31 publications 2012: 25 publications 2013: 38 publications 2014: 29 publications 2015: 28 publications 2016: 21 publications 2017: 21 publications 2018: 12 publications 2019: 18 publications 2020: 21 publications 2021: 19 publications 2022: 20 publications 2023: 31 publications 2024: 21 publications 2025: 31 publications 2026: 1 publication
1995 2026

672 publications in total across all disciplines

View publications per year as a table
S. De Gendt: publications per year, 1995 to 2026
Year Publications
1995 4
1996 2
1997 2
1998 7
1999 7
2000 6
2001 8
2002 16
2003 14
2004 18
2005 35
2006 49
2007 41
2008 35
2009 30
2010 31
2011 31
2012 25
2013 38
2014 29
2015 28
2016 21
2017 21
2018 12
2019 18
2020 21
2021 19
2022 20
2023 31
2024 21
2025 31
2026 1
Total 672
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S. De Gendt publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where S. De Gendt sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 514–533 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 516 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99 516
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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S. De Gendt D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where S. De Gendt sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 59 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 59 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120 59
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

S. De Gendt is affiliated with KU Leuven in Belgium and has a research focus encompassing engineering and materials science, with substantial work in electrical and electronic engineering, materials chemistry, and biomedical engineering.

Their research covers a variety of subfields including surfaces, coatings and films, and electronic, optical, and magnetic materials. The scientist's contributions also delve into specialized topics such as advancements in photolithography techniques, graphene research and applications, semiconductor materials and devices, and 2D materials and applications. Additional research interests include electron and X-ray spectroscopy techniques, integrated circuits and semiconductor failure analysis, as well as MXene and MAX phase materials.

Some of their recent publications are as follows:

  • Code Generation Using Machine Learning: A Systematic Review, 2022, IEEE Access
  • Multicomponent Covalent Chemical Patterning of Graphene, 2021, ACS Nano
  • Epitaxy of 2D chalcogenides: Aspects and consequences of weak van der Waals coupling, 2021, Applied Materials Today
  • Doping Graphene with Substitutional Mn, 2021, ACS Nano
  • Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers, 2021, npj 2D Materials and Applications

De Gendt frequently collaborates with a number of researchers, including Steven Brems, Danilo De Simone, Stefanie Sergeant, Clément Merckling, and Silvia Armini, with multiple publications shared among these coauthors.

The scientist's work is often published in well-regarded venues such as the Journal of Micro/Nanopatterning Materials and Metrology, ECS Meeting Abstracts, arXiv (Cornell University), ACS Applied Materials & Interfaces, and ECS Journal of Solid State Science and Technology.

Best Publications

  • Bandgap opening in oxygen plasma-treated graphene.

    Amirhasan Nourbakhsh;Mirco Cantoro;Tom Vosch;Geoffrey Pourtois

  • Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

    M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve

  • Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

    H. Nohira;W. Tsai;W. Besling;E. Young

  • Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks

    Zhen Xu;Michel Houssa;Stefan De Gendt;Marc Heyns

  • Fabrication of porogen residues free and mechanically robust low-k materials

    Adam Michal Urbanowicz;Patrick Verdonck;Denis Shamiryan;Kris Vanstreels

  • Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

    A.S. Verhulst;W.G. Vandenberghe;K. Maex;S. De Gendt

  • Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

    R. J. Carter;E. Cartier;A. Kerber;L. Pantisano

  • Advanced Interconnects: Materials, Processing, and Reliability

    Mikhail R. Baklanov;Christoph Adelmann;Larry Zhao;Stefan De Gendt

  • Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics.

    Mikhail Krishtab;Ivo Stassen;Timothée Stassin;Alexander John Cruz

  • Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects.

    Nicolo’ Chiodarelli;Sugiura Masahito;Yusaku Kashiwagi;Yunlong Li

  • Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties

    W.F.A. Besling;E. Young;T. Conard;C. Zhao

  • Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width

    Daniele Leonelli;Anne Vandooren;Rita Rooyackers;Anne S. Verhulst

  • Improving mechanical robustness of ultralow-k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening

    A. M. Urbanowicz;K. Vanstreels;P. Verdonck;D. Shamiryan

  • Deposition of HfO2 on germanium and the impact of surface pretreatments

    S. Van Elshocht;B. Brijs;M. Caymax;T. Conard

  • Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films

    C. Adelmann;V. Sriramkumar;S. Van Elshocht;P. Lehnen

  • The conversion mechanism of amorphous silicon to stoichiometric WS2

    Markus H. Heyne;Markus H. Heyne;Jean-François de Marneffe;Thomas Nuytten;Johan Meersschaut

  • Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing

    A. Nourbakhsh;M. Cantoro;A. Klekachev;F. Clemente

  • First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism

    S. Clima;Y. Y. Chen;R. Degraeve;M. Mees

  • Tall triple-gate devices with TiN/HfO/sub 2/ gate stack

    N. Collaert;M. Demand;I. Ferain;J. Lisoni

  • Constant voltage stress induced degradation in HfO2/SiO2 gate dielectric stacks

    Zhen Xu;Michel Houssa;Richard Carter;Mohamed Naili

  • Gadolinium scandate thin films as an alternative gate dielectric prepared by electron beam evaporation

    M. Wagner;T. Heeg;J. Schubert;St. Lenk

  • Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

    S. Van Elshocht;M. Caymax;T. Conard;S. De Gendt

  • Estimation of fixed charge densities in hafnium-silicate gate dielectrics

    V.S. Kaushik;B.J. O'Sullivan;G. Pourtois;N. Van Hoornick

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