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S. De Gendt

S. De Gendt

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
59
Citations
11979
World Ranking
1781
National Ranking
41

Overview

S. De Gendt is affiliated with KU Leuven in Belgium and has a research focus encompassing engineering and materials science, with substantial work in electrical and electronic engineering, materials chemistry, and biomedical engineering.

Their research covers a variety of subfields including surfaces, coatings and films, and electronic, optical, and magnetic materials. The scientist's contributions also delve into specialized topics such as advancements in photolithography techniques, graphene research and applications, semiconductor materials and devices, and 2D materials and applications. Additional research interests include electron and X-ray spectroscopy techniques, integrated circuits and semiconductor failure analysis, as well as MXene and MAX phase materials.

Some of their recent publications are as follows:

  • Code Generation Using Machine Learning: A Systematic Review, 2022, IEEE Access
  • Multicomponent Covalent Chemical Patterning of Graphene, 2021, ACS Nano
  • Epitaxy of 2D chalcogenides: Aspects and consequences of weak van der Waals coupling, 2021, Applied Materials Today
  • Doping Graphene with Substitutional Mn, 2021, ACS Nano
  • Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers, 2021, npj 2D Materials and Applications

De Gendt frequently collaborates with a number of researchers, including Steven Brems, Danilo De Simone, Stefanie Sergeant, Clément Merckling, and Silvia Armini, with multiple publications shared among these coauthors.

The scientist's work is often published in well-regarded venues such as the Journal of Micro/Nanopatterning Materials and Metrology, ECS Meeting Abstracts, arXiv (Cornell University), ACS Applied Materials & Interfaces, and ECS Journal of Solid State Science and Technology.

Best Publications

  • Bandgap opening in oxygen plasma-treated graphene.

    Amirhasan Nourbakhsh;Mirco Cantoro;Tom Vosch;Geoffrey Pourtois

  • Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

    M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve

  • Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

    H. Nohira;W. Tsai;W. Besling;E. Young

  • Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks

    Zhen Xu;Michel Houssa;Stefan De Gendt;Marc Heyns

  • Fabrication of porogen residues free and mechanically robust low-k materials

    Adam Michal Urbanowicz;Patrick Verdonck;Denis Shamiryan;Kris Vanstreels

  • Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

    A.S. Verhulst;W.G. Vandenberghe;K. Maex;S. De Gendt

  • Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

    R. J. Carter;E. Cartier;A. Kerber;L. Pantisano

  • Advanced Interconnects: Materials, Processing, and Reliability

    Mikhail R. Baklanov;Christoph Adelmann;Larry Zhao;Stefan De Gendt

  • Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics.

    Mikhail Krishtab;Ivo Stassen;Timothée Stassin;Alexander John Cruz

  • Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects.

    Nicolo’ Chiodarelli;Sugiura Masahito;Yusaku Kashiwagi;Yunlong Li

  • Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties

    W.F.A. Besling;E. Young;T. Conard;C. Zhao

  • Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width

    Daniele Leonelli;Anne Vandooren;Rita Rooyackers;Anne S. Verhulst

  • Improving mechanical robustness of ultralow-k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening

    A. M. Urbanowicz;K. Vanstreels;P. Verdonck;D. Shamiryan

  • Deposition of HfO2 on germanium and the impact of surface pretreatments

    S. Van Elshocht;B. Brijs;M. Caymax;T. Conard

  • Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films

    C. Adelmann;V. Sriramkumar;S. Van Elshocht;P. Lehnen

  • The conversion mechanism of amorphous silicon to stoichiometric WS2

    Markus H. Heyne;Markus H. Heyne;Jean-François de Marneffe;Thomas Nuytten;Johan Meersschaut

  • Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing

    A. Nourbakhsh;M. Cantoro;A. Klekachev;F. Clemente

  • First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism

    S. Clima;Y. Y. Chen;R. Degraeve;M. Mees

  • Tall triple-gate devices with TiN/HfO/sub 2/ gate stack

    N. Collaert;M. Demand;I. Ferain;J. Lisoni

  • Constant voltage stress induced degradation in HfO2/SiO2 gate dielectric stacks

    Zhen Xu;Michel Houssa;Richard Carter;Mohamed Naili

  • Gadolinium scandate thin films as an alternative gate dielectric prepared by electron beam evaporation

    M. Wagner;T. Heeg;J. Schubert;St. Lenk

  • Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

    S. Van Elshocht;M. Caymax;T. Conard;S. De Gendt

  • Estimation of fixed charge densities in hafnium-silicate gate dielectrics

    V.S. Kaushik;B.J. O'Sullivan;G. Pourtois;N. Van Hoornick

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