The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where S. De Gendt sits on this spectrum.
This scientist: 516 publications — 85th percentile
85% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where S. De Gendt sits on this spectrum.
This scientist: 59 D-Index — 75th percentile
75% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
S. De Gendt is affiliated with KU Leuven in Belgium and has a research focus encompassing engineering and materials science, with substantial work in electrical and electronic engineering, materials chemistry, and biomedical engineering.
Their research covers a variety of subfields including surfaces, coatings and films, and electronic, optical, and magnetic materials. The scientist's contributions also delve into specialized topics such as advancements in photolithography techniques, graphene research and applications, semiconductor materials and devices, and 2D materials and applications. Additional research interests include electron and X-ray spectroscopy techniques, integrated circuits and semiconductor failure analysis, as well as MXene and MAX phase materials.
Some of their recent publications are as follows:
De Gendt frequently collaborates with a number of researchers, including Steven Brems, Danilo De Simone, Stefanie Sergeant, Clément Merckling, and Silvia Armini, with multiple publications shared among these coauthors.
The scientist's work is often published in well-regarded venues such as the Journal of Micro/Nanopatterning Materials and Metrology, ECS Meeting Abstracts, arXiv (Cornell University), ACS Applied Materials & Interfaces, and ECS Journal of Solid State Science and Technology.
Amirhasan Nourbakhsh;Mirco Cantoro;Tom Vosch;Geoffrey Pourtois
M. Houssa;L. Pantisano;L.-Å. Ragnarsson;R. Degraeve
H. Nohira;W. Tsai;W. Besling;E. Young
Zhen Xu;Michel Houssa;Stefan De Gendt;Marc Heyns
Adam Michal Urbanowicz;Patrick Verdonck;Denis Shamiryan;Kris Vanstreels
A.S. Verhulst;W.G. Vandenberghe;K. Maex;S. De Gendt
R. J. Carter;E. Cartier;A. Kerber;L. Pantisano
Mikhail R. Baklanov;Christoph Adelmann;Larry Zhao;Stefan De Gendt
Mikhail Krishtab;Ivo Stassen;Timothée Stassin;Alexander John Cruz
Nicolo’ Chiodarelli;Sugiura Masahito;Yusaku Kashiwagi;Yunlong Li
W.F.A. Besling;E. Young;T. Conard;C. Zhao
Daniele Leonelli;Anne Vandooren;Rita Rooyackers;Anne S. Verhulst
A. M. Urbanowicz;K. Vanstreels;P. Verdonck;D. Shamiryan
S. Van Elshocht;B. Brijs;M. Caymax;T. Conard
C. Adelmann;V. Sriramkumar;S. Van Elshocht;P. Lehnen
Markus H. Heyne;Markus H. Heyne;Jean-François de Marneffe;Thomas Nuytten;Johan Meersschaut
A. Nourbakhsh;M. Cantoro;A. Klekachev;F. Clemente
S. Clima;Y. Y. Chen;R. Degraeve;M. Mees
N. Collaert;M. Demand;I. Ferain;J. Lisoni
Zhen Xu;Michel Houssa;Richard Carter;Mohamed Naili
M. Wagner;T. Heeg;J. Schubert;St. Lenk
S. Van Elshocht;M. Caymax;T. Conard;S. De Gendt
V.S. Kaushik;B.J. O'Sullivan;G. Pourtois;N. Van Hoornick
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