Matty Caymax

Overview

Best Publications

• Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

  D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard

  348
  Citations

• Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

  Annelies Delabie;Florence Bellenger;Michel Houssa;Thierry Conard

  293
  Citations

• Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

  Benjamin Vincent;Federica Gencarelli;Hugo Bender;Clement Merckling

  255
  Citations

• Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

  F. Gencarelli;B. Vincent;J. Demeulemeester;A. Vantomme

  247
  Citations

• Method for Growing a Monocrystalline Tin-Containing Semiconductor Material

  Benjamin Vincent;Federica Gencarelli;Roger Loo;Matty Caymax

  224
  Citations

• HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition

  A Dimoulas;G Mavrou;G Vellianitis;E Evangelou

  221
  Citations

• Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors

  Qi Xie;Shaoren Deng;Marc Schaekers;Dennis Lin

  204
  Citations

• Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

  Riikka L. Puurunen;Wilfried Vandervorst;Wim F. A. Besling;Olivier Richard

  202
  Citations

• Band alignment between (100)Si and complex rare earth∕transition metal oxides

  Valeri Afanas'ev;Andre Stesmans;C Zhao;M Caymax

  202
  Citations

• Ternary rare-earth metal oxide high-k layers on silicon oxide

  C Zhao;T Witters;B Brijs;H Bender

  197
  Citations

• Passivation of Ge ( 100 ) ∕ GeO2 ∕ high-κ Gate Stacks Using Thermal Oxide Treatments

  F. Bellenger;M. Houssa;A. Delabie;V. Afanasiev

  162
  Citations

• Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

  B. Vincent;Y. Shimura;S. Takeuchi;T. Nishimura

  157
  Citations

• Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth

  F. Iacopi;Philippe Vereecken;M. Schaekers;M. Caymax

  152
  Citations

• On the interface state density at In0.53Ga0.47As/oxide interfaces

  G. Brammertz;H.-C. Lin;M. Caymax;M. Meuris

  150
  Citations

• Method of producing transition metal dichalcogenide layer

  Matty Caymax;Markus Heyne

  149
  Citations

• High performance Ge pMOS devices using a Si-compatible process flow

  P. Zimmerman;G. Nicholas;B. De Jaeger;B. Kaczer

  146
  Citations

• Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

  Guy Brammertz;Koen Martens;Sonja Sioncke;Annelies Delabie

  145
  Citations

• METHOD OF CONTROLLING INTERNAL STRESS IN POLYCRYSTALLINE SILICON-GERMANIUM LAYER LAMINATED ON SUBSTRATE

  Fiorini Paolo;Sedky Sherif;Caymax Matty;Baert Christiaan

  144
  Citations

• Record I ON /I OFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

  J. Mitard;B. De Jaeger;F.E. Leys;G. Hellings

  141
  Citations

• Atomic layer deposition of hafnium oxide on germanium substrates

  Annelies Delabie;Riikka L. Puurunen;Bert Brijs;Matty Caymax

  135
  Citations