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Matty Caymax

Matty Caymax

D-Index & Metrics

Materials Science

D-Index
70
Citations
15170
World Ranking
4497
National Ranking
46

Matty Caymax publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Matty Caymax sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 666 publications — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Matty Caymax D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Matty Caymax sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 70 D-Index — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Matty Caymax is affiliated with Imec in Belgium and has a research focus primarily in Materials Science and Engineering. Their body of work spans several subfields including Materials Chemistry, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, and Structural Biology.

The main topics in Caymax's research include:

  • 2D Materials and Applications
  • Ferroelectric and Negative Capacitance Devices
  • MXene and MAX Phase Materials
  • Graphene research and applications
  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • Copper Interconnects and Reliability

Among recent publications by Caymax are the following papers:

  • "Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics," 2021, ACS Nano
  • "Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice," 2020, The Journal of Physical Chemistry C
  • "Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening," 2021, 2021 IEEE International Electron Devices Meeting (IEDM)
  • "A chemisorbed interfacial layer for seeding atomic layer deposition on graphite," 2021, Nanoscale
  • "Crystalline defect analysis in epitaxial Si0.7Ge0.3 layer using site-specific ECCI-STEM," 2021, Micron

Caymax has frequently published in the following venues:

  • ACS Nano
  • The Journal of Physical Chemistry C
  • 2021 IEEE International Electron Devices Meeting (IEDM)
  • Nanoscale
  • Micron

The researcher collaborates often with other scientists including Benjamin Groven, Steven Brems, Yuanyuan Shi, Xiangyu Wu, and Ankit Nalin Mehta. These coauthors have worked alongside Caymax on multiple projects and publications, reflecting established collaborative relationships.

Best Publications

  • Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

    D. P. Brunco;B. De Jaeger;G. Eneman;J. Mitard

  • Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

    Annelies Delabie;Florence Bellenger;Michel Houssa;Thierry Conard

  • Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    Benjamin Vincent;Federica Gencarelli;Hugo Bender;Clement Merckling

  • Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

    F. Gencarelli;B. Vincent;J. Demeulemeester;A. Vantomme

  • Method for Growing a Monocrystalline Tin-Containing Semiconductor Material

    Benjamin Vincent;Federica Gencarelli;Roger Loo;Matty Caymax

  • HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition

    A Dimoulas;G Mavrou;G Vellianitis;E Evangelou

  • Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors

    Qi Xie;Shaoren Deng;Marc Schaekers;Dennis Lin

  • Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

    Riikka L. Puurunen;Wilfried Vandervorst;Wim F. A. Besling;Olivier Richard

  • Band alignment between (100)Si and complex rare earth∕transition metal oxides

    Valeri Afanas'ev;Andre Stesmans;C Zhao;M Caymax

  • Ternary rare-earth metal oxide high-k layers on silicon oxide

    C Zhao;T Witters;B Brijs;H Bender

  • Passivation of Ge ( 100 ) ∕ GeO2 ∕ high-κ Gate Stacks Using Thermal Oxide Treatments

    F. Bellenger;M. Houssa;A. Delabie;V. Afanasiev

  • Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

    B. Vincent;Y. Shimura;S. Takeuchi;T. Nishimura

  • Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth

    F. Iacopi;Philippe Vereecken;M. Schaekers;M. Caymax

  • On the interface state density at In0.53Ga0.47As/oxide interfaces

    G. Brammertz;H.-C. Lin;M. Caymax;M. Meuris

  • Method of producing transition metal dichalcogenide layer

    Matty Caymax;Markus Heyne

  • High performance Ge pMOS devices using a Si-compatible process flow

    P. Zimmerman;G. Nicholas;B. De Jaeger;B. Kaczer

  • Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

    Guy Brammertz;Koen Martens;Sonja Sioncke;Annelies Delabie

  • METHOD OF CONTROLLING INTERNAL STRESS IN POLYCRYSTALLINE SILICON-GERMANIUM LAYER LAMINATED ON SUBSTRATE

    Fiorini Paolo;Sedky Sherif;Caymax Matty;Baert Christiaan

  • Record I ON /I OFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

    J. Mitard;B. De Jaeger;F.E. Leys;G. Hellings

  • Atomic layer deposition of hafnium oxide on germanium substrates

    Annelies Delabie;Riikka L. Puurunen;Bert Brijs;Matty Caymax

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