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Annelies Delabie

Annelies Delabie

D-Index & Metrics

Engineering and Technology

D-Index
47
Citations
7145
World Ranking
4964
National Ranking
61

Overview

Annelies Delabie is affiliated with KU Leuven in Belgium and has an extensive publication record focused on Engineering and Materials Science. Their research contributions span 57 publications in Engineering and 47 in Materials Science, reflecting a broad engagement with these disciplines.

The scientist's work covers several subfields, including Electrical and Electronic Engineering, Materials Chemistry, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, and Biomedical Engineering. These areas encompass a wide range of materials and their applications in technological contexts.

Main research topics addressed by Delabie include Semiconductor materials and devices, Electronic and Structural Properties of Oxides, 2D Materials and Applications, Advancements in Photolithography Techniques, Copper Interconnects and Reliability, Chalcogenide Semiconductor Thin Films, and Catalytic Processes in Materials Science.

Frequent collaborators in Delabie's research include Benjamin Groven, Kaat Van Dongen, Rachel A. Nye, Jan-Willem J. Clerix, and Gouri Sankar Kar.

Key publication venues where Delabie has published multiple works include Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, The Journal of Physical Chemistry C, Chemistry of Materials, Journal of Micro/Nanopatterning Materials and Metrology, and Micro and Nano Engineering.

Examples of recent papers highlight a focus on surface reactions, area-selective deposition techniques, and crystal growth mechanisms:

  • Insight into Selective Surface Reactions of Dimethylamino-trimethylsilane for Area-Selective Deposition of Metal, Nitride, and Oxide, 2020, The Journal of Physical Chemistry C
  • Area-Selective Deposition of Ruthenium by Area-Dependent Surface Diffusion, 2020, Chemistry of Materials
  • Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface, 2024, ACS Nano
  • Aminosilane small molecule inhibitors for area-selective deposition: Study of substrate-inhibitor interfacial interactions, 2023, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Mechanisms for undesired nucleation on H-terminated Si and dimethylamino-trimethylsilane passivated SiO2 during TiO2 area-selective atomic layer deposition, 2022, Applied Physics Letters

Best Publications

  • Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

    G. Agostinelli;A. Delabie;P. Vitanov;Z. Alexieva

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

    Annelies Delabie;Florence Bellenger;Michel Houssa;Thierry Conard

  • CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

    M. Van Hove;S. Boulay;S. R. Bahl;S. Stoffels

  • Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors

    Qi Xie;Shaoren Deng;Marc Schaekers;Dennis Lin

  • Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

    Riikka L. Puurunen;Wilfried Vandervorst;Wim F. A. Besling;Olivier Richard

  • Passivation of Ge ( 100 ) ∕ GeO2 ∕ high-κ Gate Stacks Using Thermal Oxide Treatments

    F. Bellenger;M. Houssa;A. Delabie;V. Afanasiev

  • Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

    Martin M. Frank;Yves Jean Chabal;Martin L. Green;Annelies Delabie

  • Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

    Guy Brammertz;Koen Martens;Sonja Sioncke;Annelies Delabie

  • Atomic layer deposition of hafnium oxide on germanium substrates

    Annelies Delabie;Riikka L. Puurunen;Bert Brijs;Matty Caymax

  • New Mechanisms for Ozone-Based ALD Growth of High-k Dielectrics via Nitrogen-Oxygen Species

    Sung-Hoon Jung;Petri Raisanen;Michael Givens;Eric Shero

  • A reinterpretation of the EPR spectra of Cu(II) in zeolites A, Y and ZK4, based on ab initio cluster model calculations

    Kristine Pierloot;Annelies Delabie;Marijke H. Groothaert;Robert A. Schoonheydt

  • Identification of Cu(II) coordination structures in Cu-ZSM-5, based on a DFT/ab initio assignment of the EPR spectra

    Marijke H. Groothaert;Kristine Pierloot;Annelies Delabie;Robert A. Schoonheydt

  • Capacitance-voltage characterization of GaAs–Al2O3 interfaces

    G. Brammertz;H.-C. Lin;K. Martens;D. Mercier

  • The conversion mechanism of amorphous silicon to stoichiometric WS2

    Markus H. Heyne;Markus H. Heyne;Jean-François de Marneffe;Thomas Nuytten;Johan Meersschaut

  • Challenges and opportunities in advanced Ge pMOSFETs

    E Simoen;J Mitard;Geert Hellings;Geert Eneman

  • Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2

    Valeri Afanas'ev;Andre Stesmans;Annelies Delabie;Florence Bellenger

  • Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S

    Benjamin Groven;Markus Heyne;Ankit Nalin Mehta;Hugo Bender

  • Estimation of fixed charge densities in hafnium-silicate gate dielectrics

    V.S. Kaushik;B.J. O'Sullivan;G. Pourtois;N. Van Hoornick

  • Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

    A. Delabie;M. Caymax;B. Groven;M. Heyne

  • HfO2 as gate dielectric on Ge: interfaces and deposition techniques

    M. Caymax;S. Van Elshocht;M. Houssa;A. Delabie

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