His primary areas of study are Optoelectronics, Analytical chemistry, Molecular beam epitaxy, Oxide and Epitaxy. His Optoelectronics study incorporates themes from Gate dielectric, Passivation and Gate oxide. Minghwei Hong combines subjects such as Thin film, Atomic layer deposition, Substrate and Dielectric with his study of Analytical chemistry.
His Molecular beam epitaxy research includes elements of Quasistatic process, Single crystal, Annealing and Cathode ray. His biological study spans a wide range of topics, including X-ray crystallography, Electron diffraction, Crystal growth and Mineralogy. The concepts of his Mineralogy study are interwoven with issues in Superconductivity and Condensed matter physics.
Minghwei Hong focuses on Optoelectronics, Molecular beam epitaxy, Analytical chemistry, Dielectric and Condensed matter physics. He has researched Optoelectronics in several fields, including Oxide, Gate dielectric, Gate oxide and MOSFET. His study in Oxide is interdisciplinary in nature, drawing from both Layer and Equivalent oxide thickness.
His Molecular beam epitaxy study is focused on Epitaxy in general. His Analytical chemistry research incorporates elements of Thin film, Atomic layer deposition, Annealing and Silicon. Many of his research projects under Dielectric are closely connected to Current density with Current density, tying the diverse disciplines of science together.
Minghwei Hong mostly deals with Optoelectronics, Molecular beam epitaxy, Dielectric, Condensed matter physics and Analytical chemistry. The study incorporates disciplines such as Gate dielectric, Passivation, Transconductance and MOSFET in addition to Optoelectronics. His research integrates issues of Thin film, Oxide, Atomic layer epitaxy and Semiconductor in his study of Molecular beam epitaxy.
The Dielectric study combines topics in areas such as Gallium nitride, Density of states and Germanium. His Condensed matter physics study combines topics from a wide range of disciplines, such as Ferromagnetic resonance and Magnetization. His Analytical chemistry research is multidisciplinary, relying on both Annealing, Epitaxy and Atomic layer deposition.
Minghwei Hong spends much of his time researching Optoelectronics, Molecular beam epitaxy, Passivation, Dielectric and Analytical chemistry. Minghwei Hong interconnects Gate oxide, Gate dielectric, Transconductance and Transmission electron microscopy in the investigation of issues within Optoelectronics. His Molecular beam epitaxy research includes themes of Electron diffraction and Oxide.
His studies deal with areas such as Semiconductor, Electron mobility, Band gap and Capacitor as well as Passivation. His research in Analytical chemistry intersects with topics in Scanning tunneling microscope and Atomic layer deposition. His work carried out in the field of Epitaxy brings together such families of science as Thin film and Substrate.
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Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation
M. Hong;J. Kwo;A. R. Kortan;J. P. Mannaerts.
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
M. L. Huang;Y. C. Chang;C. H. Chang;Y. J. Lee.
Applied Physics Letters (2005)
Ga2O3 films for electronic and optoelectronic applications
M. Passlack;E. F. Schubert;W. S. Hobson;M. Hong.
Journal of Applied Physics (1995)
Observation of a Magnetic Antiphase Domain Structure with Long-Range Order in a Synthetic Gd-Y Superlattice
C. F. Majkrzak;J. W. Cable;J. Kwo;M. Hong.
Physical Review Letters (1986)
Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si
J. Kwo;M. Hong;A. R. Kortan;K. L. Queeney.
Journal of Applied Physics (2001)
High ε gate dielectrics Gd2O3 and Y2O3 for silicon
J. Kwo;M. Hong;A. R. Kortan;K. T. Queeney.
Applied Physics Letters (2000)
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
P. D. Ye;G. D. Wilk;B. Yang;J. Kwo.
Applied Physics Letters (2003)
Crystal structure of the 80 K superconductor YBa2Cu4O8
P. Marsh;R. M. Fleming;M. L. Mandich;A. M. DeSantolo.
Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y1Ba2Cu3Ox
J. W. Ekin;A. I. Braginski;A. J. Panson;M. A. Janocko.
Journal of Applied Physics (1987)
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
P.D. Ye;G.D. Wilk;J. Kwo;B. Yang.
IEEE Electron Device Letters (2003)
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