D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 69 Citations 16,568 412 World Ranking 1944 National Ranking 22

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Laser
  • Optics

His primary areas of study are Optoelectronics, Analytical chemistry, Molecular beam epitaxy, Oxide and Epitaxy. His Optoelectronics study incorporates themes from Gate dielectric, Passivation and Gate oxide. Minghwei Hong combines subjects such as Thin film, Atomic layer deposition, Substrate and Dielectric with his study of Analytical chemistry.

His Molecular beam epitaxy research includes elements of Quasistatic process, Single crystal, Annealing and Cathode ray. His biological study spans a wide range of topics, including X-ray crystallography, Electron diffraction, Crystal growth and Mineralogy. The concepts of his Mineralogy study are interwoven with issues in Superconductivity and Condensed matter physics.

His most cited work include:

  • Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation (368 citations)
  • Ga2O3 films for electronic and optoelectronic applications (322 citations)
  • Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 (290 citations)

What are the main themes of his work throughout his whole career to date?

Minghwei Hong focuses on Optoelectronics, Molecular beam epitaxy, Analytical chemistry, Dielectric and Condensed matter physics. He has researched Optoelectronics in several fields, including Oxide, Gate dielectric, Gate oxide and MOSFET. His study in Oxide is interdisciplinary in nature, drawing from both Layer and Equivalent oxide thickness.

His Molecular beam epitaxy study is focused on Epitaxy in general. His Analytical chemistry research incorporates elements of Thin film, Atomic layer deposition, Annealing and Silicon. Many of his research projects under Dielectric are closely connected to Current density with Current density, tying the diverse disciplines of science together.

He most often published in these fields:

  • Optoelectronics (47.65%)
  • Molecular beam epitaxy (26.26%)
  • Analytical chemistry (24.96%)

What were the highlights of his more recent work (between 2009-2021)?

  • Optoelectronics (47.65%)
  • Molecular beam epitaxy (26.26%)
  • Dielectric (17.18%)

In recent papers he was focusing on the following fields of study:

Minghwei Hong mostly deals with Optoelectronics, Molecular beam epitaxy, Dielectric, Condensed matter physics and Analytical chemistry. The study incorporates disciplines such as Gate dielectric, Passivation, Transconductance and MOSFET in addition to Optoelectronics. His research integrates issues of Thin film, Oxide, Atomic layer epitaxy and Semiconductor in his study of Molecular beam epitaxy.

The Dielectric study combines topics in areas such as Gallium nitride, Density of states and Germanium. His Condensed matter physics study combines topics from a wide range of disciplines, such as Ferromagnetic resonance and Magnetization. His Analytical chemistry research is multidisciplinary, relying on both Annealing, Epitaxy and Atomic layer deposition.

Between 2009 and 2021, his most popular works were:

  • III–V compound semiconductor transistors—from planar to nanowire structures (142 citations)
  • Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing (65 citations)
  • Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics (59 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Laser
  • Optics

Minghwei Hong spends much of his time researching Optoelectronics, Molecular beam epitaxy, Passivation, Dielectric and Analytical chemistry. Minghwei Hong interconnects Gate oxide, Gate dielectric, Transconductance and Transmission electron microscopy in the investigation of issues within Optoelectronics. His Molecular beam epitaxy research includes themes of Electron diffraction and Oxide.

His studies deal with areas such as Semiconductor, Electron mobility, Band gap and Capacitor as well as Passivation. His research in Analytical chemistry intersects with topics in Scanning tunneling microscope and Atomic layer deposition. His work carried out in the field of Epitaxy brings together such families of science as Thin film and Substrate.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation

M. Hong;J. Kwo;A. R. Kortan;J. P. Mannaerts.
Science (1999)

492 Citations

Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3

M. L. Huang;Y. C. Chang;C. H. Chang;Y. J. Lee.
Applied Physics Letters (2005)

438 Citations

Ga2O3 films for electronic and optoelectronic applications

M. Passlack;E. F. Schubert;W. S. Hobson;M. Hong.
Journal of Applied Physics (1995)

438 Citations

Observation of a Magnetic Antiphase Domain Structure with Long-Range Order in a Synthetic Gd-Y Superlattice

C. F. Majkrzak;J. W. Cable;J. Kwo;M. Hong.
Physical Review Letters (1986)

427 Citations

Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

J. Kwo;M. Hong;A. R. Kortan;K. L. Queeney.
Journal of Applied Physics (2001)

419 Citations

High ε gate dielectrics Gd2O3 and Y2O3 for silicon

J. Kwo;M. Hong;A. R. Kortan;K. T. Queeney.
Applied Physics Letters (2000)

403 Citations

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

P. D. Ye;G. D. Wilk;B. Yang;J. Kwo.
Applied Physics Letters (2003)

395 Citations

Crystal structure of the 80 K superconductor YBa2Cu4O8

P. Marsh;R. M. Fleming;M. L. Mandich;A. M. DeSantolo.
Nature (1988)

389 Citations

Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y1Ba2Cu3Ox

J. W. Ekin;A. I. Braginski;A. J. Panson;M. A. Janocko.
Journal of Applied Physics (1987)

367 Citations

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

P.D. Ye;G.D. Wilk;J. Kwo;B. Yang.
IEEE Electron Device Letters (2003)

333 Citations

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