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Minghwei Hong

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 72 4027 3898 45 44 622 19479

Minghwei Hong publications per year

The chart shows the history of publications by Minghwei Hong between 1978 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Minghwei Hong published across 48 years, from 1978 to 2025, averaging 13.4 papers a year. Output peaked at 30 publications in 2008. 8 of the 644 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1978 to 2025. Vertical axis: number of publications, 0 to 30. Peak 30 publications in 2008. 1978: 1 publication 1979: 0 publications 1980: 5 publications 1981: 3 publications 1982: 3 publications 1983: 4 publications 1984: 5 publications 1985: 8 publications 1986: 10 publications 1987: 19 publications 1988: 22 publications 1989: 19 publications 1990: 12 publications 1991: 21 publications 1992: 16 publications 1993: 23 publications 1994: 17 publications 1995: 19 publications 1996: 16 publications 1997: 15 publications 1998: 22 publications 1999: 16 publications 2000: 16 publications 2001: 11 publications 2002: 13 publications 2003: 10 publications 2004: 7 publications 2005: 13 publications 2006: 24 publications 2007: 26 publications 2008: 30 publications 2009: 28 publications 2010: 25 publications 2011: 29 publications 2012: 18 publications 2013: 11 publications 2014: 12 publications 2015: 9 publications 2016: 7 publications 2017: 17 publications 2018: 15 publications 2019: 8 publications 2020: 12 publications 2021: 9 publications 2022: 4 publications 2023: 6 publications 2024: 4 publications 2025: 4 publications
1978 2025

644 publications in total across all disciplines

View publications per year as a table
Minghwei Hong: publications per year, 1978 to 2025
Year Publications
1978 1
1979 0
1980 5
1981 3
1982 3
1983 4
1984 5
1985 8
1986 10
1987 19
1988 22
1989 19
1990 12
1991 21
1992 16
1993 23
1994 17
1995 19
1996 16
1997 15
1998 22
1999 16
2000 16
2001 11
2002 13
2003 10
2004 7
2005 13
2006 24
2007 26
2008 30
2009 28
2010 25
2011 29
2012 18
2013 11
2014 12
2015 9
2016 7
2017 17
2018 15
2019 8
2020 12
2021 9
2022 4
2023 6
2024 4
2025 4
Total 644
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Minghwei Hong publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Minghwei Hong sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 610–629 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 622 publications — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99 622
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Minghwei Hong D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Minghwei Hong sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 72–73 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 72 D-Index — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421 72
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
Download as CSV

Overview

Minghwei Hong is affiliated with National Taiwan University in Taiwan and specializes in fields spanning Engineering and Physics and Astronomy. Their research primarily focuses on Electrical and Electronic Engineering as well as Atomic and Molecular Physics and Optics, with additional work in Materials Chemistry, Surfaces, Coatings and Films, and Electronic, Optical and Magnetic Materials.

The core topics of their scientific work include:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and interfaces
  • Surface and Thin Film Phenomena
  • Silicon Nanostructures and Photoluminescence
  • Ga2O3 and related materials
  • Quantum and electron transport phenomena

Hong has published extensively, with notable papers including:

  • "Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics-Attainment of Low Interfacial Traps and Highly Reliable Ge MOS," 2021, ACS Applied Electronic Materials
  • "Low-temperature grown single-crystal Si on epi Ge(001)-2 × 1 and its oxidation: electronic structure study via synchrotron radiation photoemission," 2020, Applied Physics Express
  • "In situ Y2O3 on p-In0.53Ga0.47As-Attainment of low interfacial trap density and thermal stability at high temperatures," 2021, Applied Physics Letters
  • "Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al 2O3/Y2O3 as a gate dielectric," 2021, Japanese Journal of Applied Physics
  • "Surface electronic structure of Si1−xGex(001)-2 × 1: a synchrotron radiation photoemission study," 2020, Applied Physics Express

The frequent coauthors collaborating with Minghwei Hong include:

  • J. Kwo
  • Hsien-Wen Wan
  • Yi-Ting Cheng
  • Y.H. Lin
  • L. Young

Hong's research appears regularly in several scientific journals. The prominent publication venues they contribute to are:

  • ACS Applied Electronic Materials
  • Japanese Journal of Applied Physics
  • Journal of Applied Physics
  • Applied Physics Express
  • Nanomaterials

Best Publications

  • Ga2O3 films for electronic and optoelectronic applications

    M. Passlack;E. F. Schubert;W. S. Hobson;M. Hong

  • Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation

    M. Hong;J. Kwo;A. R. Kortan;J. P. Mannaerts

  • Observation of a Magnetic Antiphase Domain Structure with Long-Range Order in a Synthetic Gd-Y Superlattice

    C. F. Majkrzak;J. W. Cable;J. Kwo;M. Hong

  • Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3

    M. L. Huang;Y. C. Chang;C. H. Chang;Y. J. Lee

  • Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

    J. Kwo;M. Hong;A. R. Kortan;K. L. Queeney

  • High ε gate dielectrics Gd2O3 and Y2O3 for silicon

    J. Kwo;M. Hong;A. R. Kortan;K. T. Queeney

  • GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

    P. D. Ye;G. D. Wilk;B. Yang;J. Kwo

  • Crystal structure of the 80 K superconductor YBa2Cu4O8

    P. Marsh;R. M. Fleming;M. L. Mandich;A. M. DeSantolo

  • Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y1Ba2Cu3Ox

    J. W. Ekin;A. I. Braginski;A. J. Panson;M. A. Janocko

  • GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

    P.D. Ye;G.D. Wilk;J. Kwo;B. Yang

  • Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

    F. Ren;M. Hong;S. N. G. Chu;M. A. Marcus

  • Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy

    M. Passlack;M. Hong;J. P. Mannaerts

  • Optical properties of gallium oxide thin films

    M. Rebien;W. Henrion;M. Hong;J. P. Mannaerts

  • Structural and superconducting properties of orientation-ordered Y1Ba2Cu3O7-x films prepared by molecular-beam epitaxy.

    J. Kwo;T.C. Hsieh;R.M. Fleming;M. Hong

  • III–V compound semiconductor transistors—from planar to nanowire structures

    Heike Riel;Lars-Erik Wernersson;Minghwei Hong;Jesús A. del Alamo

  • Magnetic and structural properties of single-crystal rare-earth Gd-Y superlattices.

    J. Kwo;E. M. Gyorgy;D. B. McWhan;M. Hong

  • Dielectric properties of electron‐beam deposited Ga2O3 films

    M. Passlack;N. E. J. Hunt;E. F. Schubert;G. J. Zydzik

  • Magnetic rare earth superlattices

    C.F. Majkrzak;J. Kwo;M. Hong;Y. Yafet

  • Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure

    M. L. Huang;Y. C. Chang;C. H. Chang;T. D. Lin

  • Superconducting Y‐Ba‐Cu‐O oxide films by sputtering

    M. Hong;Sy_Hwang Liou;J. Kwo;B.A. Davidson

  • Surface passivation of III-V compound semiconductors using atomic-layer-deposition grown Al2O3

    M.L. Huang;M. Hong;Y.C. Chang;C.H. Chang

Frequent Co-Authors

J. Kwo
J. Kwo National Tsing Hua University
Joseph Petrus Mannaerts
Joseph Petrus Mannaerts National Tsing Hua University
Fan Ren
Fan Ren University of Florida
Alfred Y. Cho
Alfred Y. Cho Nokia (United States)
Sung-Nee G. Chu
Sung-Nee G. Chu AXT
Kent D. Choquette
Kent D. Choquette University of Illinois at Urbana-Champaign
Robert L. Opila
Robert L. Opila University of Delaware
Yeong-Her Wang
Yeong-Her Wang National Cheng Kung University
Peide D. Ye
Peide D. Ye Purdue University West Lafayette
Yu-Hwa Lo
Yu-Hwa Lo University of California, San Diego

External Links

Personal website of Minghwei Hong Google Scholar page

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Best Scientists Citing Minghwei Hong

Peide D. Ye

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Leonard Forbes

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Publications: 60

Kie Y. Ahn

Kie Y. Ahn

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Publications: 59

Robert M. Wallace

Robert M. Wallace

The University of Texas at Dallas

Publications: 46

Brent P. Gila

Brent P. Gila

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Publications: 45

Stephen J. Pearton

Stephen J. Pearton

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Publications: 44

C. R. Abernathy

C. R. Abernathy

University of Florida

Publications: 44

Yee-Chia Yeo

Yee-Chia Yeo

National University of Singapore

Publications: 38

Jack C. Lee

Jack C. Lee

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Publications: 36

Shinichi Takagi

Shinichi Takagi

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Publications: 33

Andrew C. Kummel

Andrew C. Kummel

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Publications: 31

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Publications: 31

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Albert Chin

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Publications: 30

Paul C. McIntyre

Paul C. McIntyre

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Publications: 29

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Marco Fanciulli

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