Minghwei Hong

Overview

Best Publications

• Ga2O3 films for electronic and optoelectronic applications

  M. Passlack;E. F. Schubert;W. S. Hobson;M. Hong

  529
  Citations

• Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation

  M. Hong;J. Kwo;A. R. Kortan;J. P. Mannaerts

  520
  Citations

• Observation of a Magnetic Antiphase Domain Structure with Long-Range Order in a Synthetic Gd-Y Superlattice

  C. F. Majkrzak;J. W. Cable;J. Kwo;M. Hong

  467
  Citations

• Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3

  M. L. Huang;Y. C. Chang;C. H. Chang;Y. J. Lee

  466
  Citations

• Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

  J. Kwo;M. Hong;A. R. Kortan;K. L. Queeney

  447
  Citations

• High ε gate dielectrics Gd2O3 and Y2O3 for silicon

  J. Kwo;M. Hong;A. R. Kortan;K. T. Queeney

  430
  Citations

• GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

  P. D. Ye;G. D. Wilk;B. Yang;J. Kwo

  419
  Citations

• Crystal structure of the 80 K superconductor YBa2Cu4O8

  P. Marsh;R. M. Fleming;M. L. Mandich;A. M. DeSantolo

  404
  Citations

• Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y1Ba2Cu3Ox

  J. W. Ekin;A. I. Braginski;A. J. Panson;M. A. Janocko

  389
  Citations

• GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

  P.D. Ye;G.D. Wilk;J. Kwo;B. Yang

  347
  Citations

• Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

  F. Ren;M. Hong;S. N. G. Chu;M. A. Marcus

  309
  Citations

• Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy

  M. Passlack;M. Hong;J. P. Mannaerts

  294
  Citations

• Optical properties of gallium oxide thin films

  M. Rebien;W. Henrion;M. Hong;J. P. Mannaerts

  281
  Citations

• Structural and superconducting properties of orientation-ordered Y1Ba2Cu3O7-x films prepared by molecular-beam epitaxy.

  J. Kwo;T.C. Hsieh;R.M. Fleming;M. Hong

  274
  Citations

• III–V compound semiconductor transistors—from planar to nanowire structures

  Heike Riel;Lars-Erik Wernersson;Minghwei Hong;Jesús A. del Alamo

  263
  Citations

• Magnetic and structural properties of single-crystal rare-earth Gd-Y superlattices.

  J. Kwo;E. M. Gyorgy;D. B. McWhan;M. Hong

  253
  Citations

• Dielectric properties of electron‐beam deposited Ga2O3 films

  M. Passlack;N. E. J. Hunt;E. F. Schubert;G. J. Zydzik

  246
  Citations

• Magnetic rare earth superlattices

  C.F. Majkrzak;J. Kwo;M. Hong;Y. Yafet

  237
  Citations

• Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure

  M. L. Huang;Y. C. Chang;C. H. Chang;T. D. Lin

  236
  Citations

• Superconducting Y‐Ba‐Cu‐O oxide films by sputtering

  M. Hong;Sy_Hwang Liou;J. Kwo;B.A. Davidson

  227
  Citations

• Surface passivation of III-V compound semiconductors using atomic-layer-deposition grown Al2O3

  M.L. Huang;M. Hong;Y.C. Chang;C.H. Chang

  0
  Citations