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Peide D. Ye

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 92 267 260 131 124 495 47741
Materials Science 96 1240 1187 400 372 536 49143
Physics 97 1786 1699 933 875 533 49648

Peide D. Ye publications per year

The chart shows the history of publications by Peide D. Ye between 1995 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Peide D. Ye published across 32 years, from 1995 to 2026, averaging 19 papers a year. Output peaked at 47 publications in 2018. 22 of the 607 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 1995 to 2026. Vertical axis: number of publications, 0 to 47. Peak 47 publications in 2018. 1995: 3 publications 1996: 5 publications 1997: 1 publication 1998: 3 publications 1999: 2 publications 2000: 2 publications 2001: 2 publications 2002: 10 publications 2003: 8 publications 2004: 15 publications 2005: 10 publications 2006: 12 publications 2007: 21 publications 2008: 24 publications 2009: 15 publications 2010: 21 publications 2011: 19 publications 2012: 22 publications 2013: 33 publications 2014: 41 publications 2015: 29 publications 2016: 32 publications 2017: 40 publications 2018: 47 publications 2019: 33 publications 2020: 29 publications 2021: 34 publications 2022: 28 publications 2023: 22 publications 2024: 22 publications 2025: 21 publications 2026: 1 publication
1995 2026

607 publications in total across all disciplines

View publications per year as a table
Peide D. Ye: publications per year, 1995 to 2026
Year Publications
1995 3
1996 5
1997 1
1998 3
1999 2
2000 2
2001 2
2002 10
2003 8
2004 15
2005 10
2006 12
2007 21
2008 24
2009 15
2010 21
2011 19
2012 22
2013 33
2014 41
2015 29
2016 32
2017 40
2018 47
2019 33
2020 29
2021 34
2022 28
2023 22
2024 22
2025 21
2026 1
Total 607
Download as CSV

Peide D. Ye publications per year - data summary

  • Peide D. Ye, a Electronics and Electrical Engineering scholar from Purdue University West Lafayette, has 607 publications recorded across 32 years, from 1995 to 2026.
  • The oldest publication on record dates to 1995 and the most recent to 2026.
  • The most productive year is 2018, with 47 publications.
  • The least productive years with any output are 1997 and 2026, with 1 publication each.
  • The rate of publication averages 19.0 papers per year over the whole span, or 19.0 per year counting only the 32 years with at least one publication.
  • The last 5 years on the chart (2022-2026) hold 94 publications, 15% of the career total.
  • Split into equal eras - 1995-2005: 61 publications (5.5 per year); 2006-2016: 269 publications (24.5 per year); 2017-2026: 277 publications (27.7 per year).
  • Comparing the opening and closing eras, the overall trend of publication is rising.

Peide D. Ye publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Peide D. Ye sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 494–513 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 495 publications — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103 495
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Peide D. Ye publication distribution in Electronics and Electrical Engineering in 2026 - data summary

  • The chart plots the publication count of all 6,875 Electronics and Electrical Engineering scientists ranked by Research.com in 2026, grouped into 53 ranges running from 34–53 to 1,065+ publications.
  • Peide D. Ye, a Electronics and Electrical Engineering scholar from Purdue University West Lafayette, records 495 publications - the 84th percentile of the discipline.
  • 84% of ranked Electronics and Electrical Engineering scientists score the same or lower than Peide D. Ye, and about 16% score higher.
  • The median of the discipline falls in the 254–273 publications range, and Peide D. Ye ranks above the median.
  • The most crowded range is 174–193 publications, holding 445 scientists (6% of the field).
  • 60% of the field sits in the lowest quarter of the value range (up to 294–313 publications), so the distribution is heavily right-skewed and high scores are rare.
  • The final bar has no upper bound: it groups every scientist with 1,065 publications or more, 99 scientists in all (1% of the field).

Peide D. Ye D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Peide D. Ye sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 92 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 92 D-Index — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14 92
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Peide D. Ye D-index placement in Electronics and Electrical Engineering in 2026 - data summary

  • The chart plots the discipline H-index (D-index) of all 6,875 Electronics and Electrical Engineering scientists ranked by Research.com in 2026, grouped into 82 ranges running from 30 to 111+ D-Index.
  • Peide D. Ye, a Electronics and Electrical Engineering scholar from Purdue University West Lafayette, records 92 D-Index - the 96th percentile of the discipline.
  • 96% of ranked Electronics and Electrical Engineering scientists score the same or lower than Peide D. Ye, and about 4% score higher.
  • The median of the discipline falls in the 46 D-Index range, and Peide D. Ye ranks above the median.
  • The most crowded range is 32 D-Index, holding 263 scientists (4% of the field).
  • 60% of the field sits in the lowest quarter of the value range (up to 50 D-Index), so the distribution is heavily right-skewed and high scores are rare.
  • The final bar has no upper bound: it groups every scientist with 111 D-Index or more, 96 scientists in all (1% of the field).

Research.com Recognitions

  • 2016 - Fellow of American Physical Society (APS) Citation For contributions to scientific understanding and technical development of transistor technology on novel channel materials

Overview

Peide D. Ye is affiliated with Purdue University West Lafayette in the United States. Their research primarily spans the fields of engineering and materials science, with notable contributions in electrical and electronic engineering and materials chemistry.

Their work covers several subfields including atomic and molecular physics, optics, electronic, optical and magnetic materials, as well as biomedical engineering. The main topics of their research include semiconductor materials and devices, thin-film transistor technologies, ZnO doping and properties, advanced memory and neural computing, ferroelectric and negative capacitance devices, two-dimensional materials and applications, and the electronic and structural properties of oxides.

Peide D. Ye has published extensively in several venues, with frequent publications in:

  • IEEE Transactions on Electron Devices
  • arXiv (Cornell University)
  • Nano Letters
  • IEEE Electron Device Letters
  • Applied Physics Letters

They have collaborated frequently with several co-authors, including:

  • Mengwei Si
  • Zehao Lin
  • Chang Niu
  • Zhuocheng Zhang
  • Adam Charnas

Among their recent papers are:

  • Bandgap engineering of two-dimensional semiconductor materials, 2020, npj 2D Materials and Applications
  • Scaled indium oxide transistors fabricated using atomic layer deposition, 2022, Nature Electronics
  • Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors, 2020, Nano Letters
  • Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating, 2020, ACS Nano
  • The resurrection of tellurium as an elemental two-dimensional semiconductor, 2022, npj 2D Materials and Applications

Peide D. Ye received the designation of Fellow of the American Physical Society in 2016 for contributions to scientific understanding and technical development of transistor technology on novel channel materials.

Best Publications

  • Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

    Han Liu;Adam T. Neal;Zhen Zhu;Zhe Luo

  • Phosphorene: A New 2D Material with High Carrier Mobility

    Han Liu;Adam T. Neal;Zhen Zhu;David Tomanek

  • Semiconducting black phosphorus: synthesis, transport properties and electronic applications

    Han Liu;Yuchen Du;Yexin Deng;Peide D. Ye

  • Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode

    Yexin Deng;Zhe Luo;Nathan J. Conrad;Han Liu

  • Bandgap engineering of two-dimensional semiconductor materials

    A. Chaves;J. G. Azadani;Hussain Alsalman;Hussain Alsalman;D. R. da Costa

  • A ferroelectric semiconductor field-effect transistor

    Mengwei Si;Atanu K. Saha;Shengjie Gao;Gang Qiu

  • Channel Length Scaling of MoS2 MOSFETs

    Han Liu;Adam T. Neal;Peide D. Ye

  • Field-effect transistors made from solution-grown two-dimensional tellurene

    Yixiu Wang;Gang Qiu;Ruoxing Wang;Shouyuan Huang

  • Chloride molecular doping technique on 2D materials: WS2 and MoS2.

    Lingming Yang;Kausik Majumdar;Han Liu;Yuchen Du

  • Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus.

    Zhe Luo;Jesse Maassen;Yexin Deng;Yuchen Du

  • Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

    Sanghyun Ju;Antonio Facchetti;Yi Xuan;Jun Liu

  • MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

    Han Liu;Peide D. Ye

  • Steep-slope hysteresis-free negative capacitance MoS 2 transistors

    Mengwei Si;Chun-Jung Su;Chunsheng Jiang;Chunsheng Jiang;Nathan J. Conrad

  • Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

    Yuchen Du;Han Liu;Yexin Deng;Peide D. Ye

  • GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

    P. D. Ye;B. Yang;K. K. Ng;J. Bude

  • Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling.

    Yuchen Du;Han Liu;Yexin Deng;Peide D. Ye

  • Electrons in a Periodic Magnetic Field Induced by a Regular Array of Micromagnets

    P. D. Ye;D. Weiss;R. R. Gerhardts;M. Seeger

  • GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

    P. D. Ye;G. D. Wilk;B. Yang;J. Kwo

  • High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

    Y. Xuan;Y.Q. Wu;P.D. Ye

  • Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions.

    Yang Xu;Cheng Cheng;Sichao Du;Jianyi Yang

  • Phosphorene: An Unexplored 2D Semiconductor with a High Hole

    Mobility Liu;Adam T. Neal;Zhen Zhu;Zhe Luo

Frequent Co-Authors

Mengwei Si
Mengwei Si Purdue University West Lafayette
Yanqing Wu
Yanqing Wu Peking University
Wenzhuo Wu
Wenzhuo Wu Purdue University West Lafayette
Hong Zhou
Hong Zhou Xidian University
Roy G. Gordon
Roy G. Gordon Harvard University
Xianfan Xu
Xianfan Xu Purdue University West Lafayette
Yi Xuan
Yi Xuan Purdue University West Lafayette
Muhammad A. Alam
Muhammad A. Alam Purdue University West Lafayette
Yong P. Chen
Yong P. Chen Purdue University West Lafayette
Ali Shakouri
Ali Shakouri Purdue University West Lafayette

External Links

Personal website of Peide D. Ye Google Scholar page

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Related Online Degrees & Career Pathways

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For those looking to quickly enter the workforce or advance specific skills, 6 month certificate programs present a powerful pathway. These short-term credentials focus on practical knowledge that aligns closely with industry demands, often leading to well-paying positions.

Lastly, many careers in electronics and electrical fields suit individuals who prefer independent, focused work environments. For example, roles that fit introvert jobs that pay well can align well with technical tasks and problem-solving associated with this sector.

Best Scientists Citing Peide D. Ye

Han Zhang

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Robert M. Wallace

Robert M. Wallace

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Shinichi Takagi

Shinichi Takagi

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Publications: 75

Mitsuru Takenaka

Mitsuru Takenaka

University of Tokyo

Publications: 69

Minghwei Hong

Minghwei Hong

National Taiwan University

Publications: 69

J. Kwo

J. Kwo

National Tsing Hua University

Publications: 67

Yue Hao

Yue Hao

Xidian University

Publications: 66

Yong-Wei Zhang

Yong-Wei Zhang

Institute of High Performance Computing

Publications: 53

Jincheng Zhang

Jincheng Zhang

Xidian University

Publications: 50

Kenji Watanabe

Kenji Watanabe

National Institute for Materials Science

Publications: 49

Lei Liao

Lei Liao

Hunan University

Publications: 47

Jiyoung Kim

Jiyoung Kim

The University of Texas at Dallas

Publications: 44

Weida Hu

Weida Hu

Chinese Academy of Sciences

Publications: 43

David Wei Zhang

David Wei Zhang

Fudan University

Publications: 43

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Publications: 43

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