World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
92
Citations
47741
World Ranking
267
National Ranking
130

Materials Science

D-Index
96
Citations
49143
World Ranking
1241
National Ranking
402

Physics

D-Index
97
Citations
49648
World Ranking
1786
National Ranking
933

Research.com Recognitions

  • 2016 - Fellow of American Physical Society (APS) Citation For contributions to scientific understanding and technical development of transistor technology on novel channel materials

Overview

Peide D. Ye is affiliated with Purdue University West Lafayette in the United States. Their research primarily spans the fields of engineering and materials science, with notable contributions in electrical and electronic engineering and materials chemistry.

Their work covers several subfields including atomic and molecular physics, optics, electronic, optical and magnetic materials, as well as biomedical engineering. The main topics of their research include semiconductor materials and devices, thin-film transistor technologies, ZnO doping and properties, advanced memory and neural computing, ferroelectric and negative capacitance devices, two-dimensional materials and applications, and the electronic and structural properties of oxides.

Peide D. Ye has published extensively in several venues, with frequent publications in:

  • IEEE Transactions on Electron Devices
  • arXiv (Cornell University)
  • Nano Letters
  • IEEE Electron Device Letters
  • Applied Physics Letters

They have collaborated frequently with several co-authors, including:

  • Mengwei Si
  • Zehao Lin
  • Chang Niu
  • Zhuocheng Zhang
  • Adam Charnas

Among their recent papers are:

  • Bandgap engineering of two-dimensional semiconductor materials, 2020, npj 2D Materials and Applications
  • Scaled indium oxide transistors fabricated using atomic layer deposition, 2022, Nature Electronics
  • Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors, 2020, Nano Letters
  • Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating, 2020, ACS Nano
  • The resurrection of tellurium as an elemental two-dimensional semiconductor, 2022, npj 2D Materials and Applications

Peide D. Ye received the designation of Fellow of the American Physical Society in 2016 for contributions to scientific understanding and technical development of transistor technology on novel channel materials.

Best Publications

  • Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

    Han Liu;Adam T. Neal;Zhen Zhu;Zhe Luo

  • Phosphorene: A New 2D Material with High Carrier Mobility

    Han Liu;Adam T. Neal;Zhen Zhu;David Tomanek

  • Semiconducting black phosphorus: synthesis, transport properties and electronic applications

    Han Liu;Yuchen Du;Yexin Deng;Peide D. Ye

  • Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode

    Yexin Deng;Zhe Luo;Nathan J. Conrad;Han Liu

  • Bandgap engineering of two-dimensional semiconductor materials

    A. Chaves;J. G. Azadani;Hussain Alsalman;Hussain Alsalman;D. R. da Costa

  • A ferroelectric semiconductor field-effect transistor

    Mengwei Si;Atanu K. Saha;Shengjie Gao;Gang Qiu

  • Channel Length Scaling of MoS2 MOSFETs

    Han Liu;Adam T. Neal;Peide D. Ye

  • Field-effect transistors made from solution-grown two-dimensional tellurene

    Yixiu Wang;Gang Qiu;Ruoxing Wang;Shouyuan Huang

  • Chloride molecular doping technique on 2D materials: WS2 and MoS2.

    Lingming Yang;Kausik Majumdar;Han Liu;Yuchen Du

  • Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus.

    Zhe Luo;Jesse Maassen;Yexin Deng;Yuchen Du

  • Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

    Sanghyun Ju;Antonio Facchetti;Yi Xuan;Jun Liu

  • MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

    Han Liu;Peide D. Ye

  • Steep-slope hysteresis-free negative capacitance MoS 2 transistors

    Mengwei Si;Chun-Jung Su;Chunsheng Jiang;Chunsheng Jiang;Nathan J. Conrad

  • Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

    Yuchen Du;Han Liu;Yexin Deng;Peide D. Ye

  • GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

    P. D. Ye;B. Yang;K. K. Ng;J. Bude

  • Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling.

    Yuchen Du;Han Liu;Yexin Deng;Peide D. Ye

  • Electrons in a Periodic Magnetic Field Induced by a Regular Array of Micromagnets

    P. D. Ye;D. Weiss;R. R. Gerhardts;M. Seeger

  • GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

    P. D. Ye;G. D. Wilk;B. Yang;J. Kwo

  • High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

    Y. Xuan;Y.Q. Wu;P.D. Ye

  • Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions.

    Yang Xu;Cheng Cheng;Sichao Du;Jianyi Yang

  • Phosphorene: An Unexplored 2D Semiconductor with a High Hole

    Mobility Liu;Adam T. Neal;Zhen Zhu;Zhe Luo

Frequent Co-Authors

Mengwei Si
Mengwei Si Purdue University West Lafayette
Yanqing Wu
Yanqing Wu Peking University
Wenzhuo Wu
Wenzhuo Wu Purdue University West Lafayette
Hong Zhou
Hong Zhou Xidian University
Roy G. Gordon
Roy G. Gordon Harvard University
Xianfan Xu
Xianfan Xu Purdue University West Lafayette
Yi Xuan
Yi Xuan Purdue University West Lafayette
Muhammad A. Alam
Muhammad A. Alam Purdue University West Lafayette
Yong P. Chen
Yong P. Chen Purdue University West Lafayette
Ali Shakouri
Ali Shakouri Purdue University West Lafayette

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For those interested in Electronics and Electrical Engineering, exploring related online degrees can provide flexibility and tailored learning opportunities. Many military spouse friendly online colleges offer specialized support and adaptable programs, making education accessible for students with unique circumstances.

Another convenient option is enrolling in online schools with multiple start dates, which allow learners to begin courses throughout the year rather than waiting for traditional semester schedules. This flexibility helps accommodate working professionals and busy students.

For those looking to quickly enter the workforce or advance specific skills, 6 month certificate programs present a powerful pathway. These short-term credentials focus on practical knowledge that aligns closely with industry demands, often leading to well-paying positions.

Lastly, many careers in electronics and electrical fields suit individuals who prefer independent, focused work environments. For example, roles that fit introvert jobs that pay well can align well with technical tasks and problem-solving associated with this sector.

Best Scientists Citing Peide D. Ye

Trending Scientists