World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
92
Citations
47741
World Ranking
267
National Ranking
131

Materials Science

D-Index
96
Citations
49143
World Ranking
1240
National Ranking
400

Physics

D-Index
97
Citations
49648
World Ranking
1786
National Ranking
933

Peide D. Ye publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Peide D. Ye sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 495 publications — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Peide D. Ye D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Peide D. Ye sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 92 D-Index — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2016 - Fellow of American Physical Society (APS) Citation For contributions to scientific understanding and technical development of transistor technology on novel channel materials

Overview

Peide D. Ye is affiliated with Purdue University West Lafayette in the United States. Their research primarily spans the fields of engineering and materials science, with notable contributions in electrical and electronic engineering and materials chemistry.

Their work covers several subfields including atomic and molecular physics, optics, electronic, optical and magnetic materials, as well as biomedical engineering. The main topics of their research include semiconductor materials and devices, thin-film transistor technologies, ZnO doping and properties, advanced memory and neural computing, ferroelectric and negative capacitance devices, two-dimensional materials and applications, and the electronic and structural properties of oxides.

Peide D. Ye has published extensively in several venues, with frequent publications in:

  • IEEE Transactions on Electron Devices
  • arXiv (Cornell University)
  • Nano Letters
  • IEEE Electron Device Letters
  • Applied Physics Letters

They have collaborated frequently with several co-authors, including:

  • Mengwei Si
  • Zehao Lin
  • Chang Niu
  • Zhuocheng Zhang
  • Adam Charnas

Among their recent papers are:

  • Bandgap engineering of two-dimensional semiconductor materials, 2020, npj 2D Materials and Applications
  • Scaled indium oxide transistors fabricated using atomic layer deposition, 2022, Nature Electronics
  • Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors, 2020, Nano Letters
  • Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating, 2020, ACS Nano
  • The resurrection of tellurium as an elemental two-dimensional semiconductor, 2022, npj 2D Materials and Applications

Peide D. Ye received the designation of Fellow of the American Physical Society in 2016 for contributions to scientific understanding and technical development of transistor technology on novel channel materials.

Best Publications

  • Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

    Han Liu;Adam T. Neal;Zhen Zhu;Zhe Luo

  • Phosphorene: A New 2D Material with High Carrier Mobility

    Han Liu;Adam T. Neal;Zhen Zhu;David Tomanek

  • Semiconducting black phosphorus: synthesis, transport properties and electronic applications

    Han Liu;Yuchen Du;Yexin Deng;Peide D. Ye

  • Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode

    Yexin Deng;Zhe Luo;Nathan J. Conrad;Han Liu

  • Bandgap engineering of two-dimensional semiconductor materials

    A. Chaves;J. G. Azadani;Hussain Alsalman;Hussain Alsalman;D. R. da Costa

  • A ferroelectric semiconductor field-effect transistor

    Mengwei Si;Atanu K. Saha;Shengjie Gao;Gang Qiu

  • Channel Length Scaling of MoS2 MOSFETs

    Han Liu;Adam T. Neal;Peide D. Ye

  • Field-effect transistors made from solution-grown two-dimensional tellurene

    Yixiu Wang;Gang Qiu;Ruoxing Wang;Shouyuan Huang

  • Chloride molecular doping technique on 2D materials: WS2 and MoS2.

    Lingming Yang;Kausik Majumdar;Han Liu;Yuchen Du

  • Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus.

    Zhe Luo;Jesse Maassen;Yexin Deng;Yuchen Du

  • Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

    Sanghyun Ju;Antonio Facchetti;Yi Xuan;Jun Liu

  • MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

    Han Liu;Peide D. Ye

  • Steep-slope hysteresis-free negative capacitance MoS 2 transistors

    Mengwei Si;Chun-Jung Su;Chunsheng Jiang;Chunsheng Jiang;Nathan J. Conrad

  • Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

    Yuchen Du;Han Liu;Yexin Deng;Peide D. Ye

  • GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

    P. D. Ye;B. Yang;K. K. Ng;J. Bude

  • Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling.

    Yuchen Du;Han Liu;Yexin Deng;Peide D. Ye

  • Electrons in a Periodic Magnetic Field Induced by a Regular Array of Micromagnets

    P. D. Ye;D. Weiss;R. R. Gerhardts;M. Seeger

  • GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

    P. D. Ye;G. D. Wilk;B. Yang;J. Kwo

  • High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

    Y. Xuan;Y.Q. Wu;P.D. Ye

  • Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions.

    Yang Xu;Cheng Cheng;Sichao Du;Jianyi Yang

  • Phosphorene: An Unexplored 2D Semiconductor with a High Hole

    Mobility Liu;Adam T. Neal;Zhen Zhu;Zhe Luo

Frequent Co-Authors

Mengwei Si
Mengwei Si Purdue University West Lafayette
Yanqing Wu
Yanqing Wu Peking University
Wenzhuo Wu
Wenzhuo Wu Purdue University West Lafayette
Hong Zhou
Hong Zhou Xidian University
Roy G. Gordon
Roy G. Gordon Harvard University
Xianfan Xu
Xianfan Xu Purdue University West Lafayette
Yi Xuan
Yi Xuan Purdue University West Lafayette
Muhammad A. Alam
Muhammad A. Alam Purdue University West Lafayette
Yong P. Chen
Yong P. Chen Purdue University West Lafayette
Ali Shakouri
Ali Shakouri Purdue University West Lafayette

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