The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Mengwei Si sits on this spectrum.
This scientist: 176 publications — 22nd percentile
22% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Mengwei Si sits on this spectrum.
This scientist: 40 D-Index — 36th percentile
36% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Mengwei Si is a researcher affiliated with Purdue University West Lafayette in the United States. Their work primarily focuses on fields related to Engineering and Materials Science, with a strong specialization in Electrical and Electronic Engineering and Materials Chemistry.
The scientist's research covers topics including semiconductor materials and devices, ferroelectric and negative capacitance devices, thin-film transistor technologies, ZnO doping and properties, advanced memory and neural computing, MXene and MAX phase materials, and the electronic and structural properties of oxides.
Mengwei Si has contributed extensively to various publication venues. Frequent outlets for their research include:
Cooperation with other researchers is also a significant aspect of their work. Notable frequent coauthors include:
Among Mengwei Si's recent publications are:
The emphasis in Mengwei Si's research is placed on advanced semiconductor technologies, thin transistors, and ferroelectric semiconductors, integrating material science with electronic device applications. Their contributions span multiple subfields that combine engineering principles with materials chemistry and applied physics, facilitating advances in semiconductor device performance and novel electronic components.
Mengwei Si;Atanu K. Saha;Shengjie Gao;Gang Qiu
Mengwei Si;Chun-Jung Su;Chunsheng Jiang;Chunsheng Jiang;Nathan J. Conrad
Yuchen Du;Han Liu;Adam T. Neal;Mengwei Si
Mengwei Si;Pai-Ying Liao;Gang Qiu;Yuqin Duan
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Hong Zhou;Mengwei Si;Sami Alghmadi;Gang Qiu
Han Liu;Mengwei Si;Yexin Deng;Adam T. Neal
Yuchen Du;Han Liu;Adam T. Neal;Mengwei Si
Mengwei Si;Chun-Jung Su;Chunsheng Jiang;Nathan J. Conrad
Han Liu;Mengwei Si;Sina Najmaei;Adam T. Neal
Hong Zhou;Mengwei Si;Sami Alghamdi;Gang Qiu
Han Liu;Mengwei Si;Sina Najmaei;Adam T. Neal
Han Liu;Adam T. Neal;Mengwei Si;Yuchen Du
Jing-Kai Qin;Pai-Ying Liao;Mengwei Si;Shiyuan Gao
Mengwei Si;Yaoqiao Hu;Zehao Lin;Xing Sun
Hong Zhou;Sami Alghmadi;Mengwei Si;Gang Qiu
Mengwei Si;Chunsheng Jiang;Wonil Chung;Yuchen Du
Muhammad A. Alam;Mengwei Si;Peide D. Ye
Xuefei Li;Lingming Yang;Mengwei Si;Sichao Li
Mengwei Si;Xiao Lyu;Pragya R. Shrestha;Xing Sun
Mengwei Si;Joseph Andler;Xiao Lyu;Chang Niu
Muhammad A. Alam;Mengwei Si;Peide D. Ye
Mengwei Si;Atanu K. Saha;Pai-Ying Liao;Shengjie Gao
Mengwei Si;Xiao Lyu;Peide D. Ye
X. Lyu;M. Si;X. Sun;M. A. Capano
X. Lyu;M. Si;P. R. Shrestha;K. P. Cheung
SangHoon Shin;Muhammad Abdul Wahab;Muhammad Masuduzzaman;Kerry Maize
Mengwei Si;Zhuocheng Zhang;Sou-Chi Chang;Nazila Haratipour
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