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2025

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Electronics and Electrical Engineering

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40
Citations
7067
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National Ranking
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  • 2025 - Research.com Rising Stars Award

Overview

Mengwei Si is a researcher affiliated with Purdue University West Lafayette in the United States. Their work primarily focuses on fields related to Engineering and Materials Science, with a strong specialization in Electrical and Electronic Engineering and Materials Chemistry.

The scientist's research covers topics including semiconductor materials and devices, ferroelectric and negative capacitance devices, thin-film transistor technologies, ZnO doping and properties, advanced memory and neural computing, MXene and MAX phase materials, and the electronic and structural properties of oxides.

Mengwei Si has contributed extensively to various publication venues. Frequent outlets for their research include:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Applied Physics Letters
  • arXiv (Cornell University)
  • 2022 International Electron Devices Meeting (IEDM)

Cooperation with other researchers is also a significant aspect of their work. Notable frequent coauthors include:

  • Peide D. Ye
  • Zehao Lin
  • Adam Charnas
  • Xiuyan Li
  • Zhuocheng Zhang

Among Mengwei Si's recent publications are:

  • "Ultra-wide bandgap semiconductor Ga2O3 power diodes," Nature Communications, 2022
  • "Scaled indium oxide transistors fabricated using atomic layer deposition," Nature Electronics, 2022
  • "Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors," Nano Letters, 2020
  • "Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating," ACS Nano, 2020
  • "Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction," ACS Nano, 2021

The emphasis in Mengwei Si's research is placed on advanced semiconductor technologies, thin transistors, and ferroelectric semiconductors, integrating material science with electronic device applications. Their contributions span multiple subfields that combine engineering principles with materials chemistry and applied physics, facilitating advances in semiconductor device performance and novel electronic components.

Best Publications

  • A ferroelectric semiconductor field-effect transistor

    Mengwei Si;Atanu K. Saha;Shengjie Gao;Gang Qiu

  • Steep-slope hysteresis-free negative capacitance MoS 2 transistors

    Mengwei Si;Chun-Jung Su;Chunsheng Jiang;Chunsheng Jiang;Nathan J. Conrad

  • Molecular Doping of Multilayer ${ m MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances

    Yuchen Du;Han Liu;Adam T. Neal;Mengwei Si

  • Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure

    Mengwei Si;Pai-Ying Liao;Gang Qiu;Yuqin Duan

  • Scaled indium oxide transistors fabricated using atomic layer deposition

    Unknown

  • High Performance Depletion/Enhancement-Mode beta-Ga2O3 on Insulator (GOOI) Field-effect Transistors with Record Drain Currents of 600/450 mA/mm

    Hong Zhou;Mengwei Si;Sami Alghmadi;Gang Qiu

  • Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.

    Han Liu;Mengwei Si;Yexin Deng;Adam T. Neal

  • Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances

    Yuchen Du;Han Liu;Adam T. Neal;Mengwei Si

  • Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors

    Mengwei Si;Chun-Jung Su;Chunsheng Jiang;Nathan J. Conrad

  • Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films

    Han Liu;Mengwei Si;Sina Najmaei;Adam T. Neal

  • High-Performance Depletion/Enhancement-ode $eta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

    Hong Zhou;Mengwei Si;Sami Alghamdi;Gang Qiu

  • Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films

    Han Liu;Mengwei Si;Sina Najmaei;Adam T. Neal

  • The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights

    Han Liu;Adam T. Neal;Mengwei Si;Yuchen Du

  • Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes

    Jing-Kai Qin;Pai-Ying Liao;Mengwei Si;Shiyuan Gao

  • Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors.

    Mengwei Si;Yaoqiao Hu;Zehao Lin;Xing Sun

  • Al2O3/ $eta $ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing

    Hong Zhou;Sami Alghmadi;Mengwei Si;Gang Qiu

  • Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor

    Mengwei Si;Chunsheng Jiang;Wonil Chung;Yuchen Du

  • A Critical Review of Recent Progress on Negative Capacitance Field-Effect Transistors.

    Muhammad A. Alam;Mengwei Si;Peide D. Ye

  • Performance Potential and Limit of MoS2 Transistors

    Xuefei Li;Lingming Yang;Mengwei Si;Sichao Li

  • Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide

    Mengwei Si;Xiao Lyu;Pragya R. Shrestha;Xing Sun

  • Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating.

    Mengwei Si;Joseph Andler;Xiao Lyu;Chang Niu

  • A critical review of recent progress on negative capacitance field-effect transistors

    Muhammad A. Alam;Mengwei Si;Peide D. Ye

  • Room-Temperature Electrocaloric Effect in Layered Ferroelectric CuInP2S6 for Solid-State Refrigeration.

    Mengwei Si;Atanu K. Saha;Pai-Ying Liao;Shengjie Gao

  • Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in a Ferroelectric/Dielectric Stack

    Mengwei Si;Xiao Lyu;Peide D. Ye

  • Ferroelectric and Anti-Ferroelectric Hafnium Zirconium Oxide: Scaling Limit, Switching Speed and Record High Polarization Density

    X. Lyu;M. Si;X. Sun;M. A. Capano

  • First Direct Measurement of Sub-Nanosecond Polarization Switching in Ferroelectric Hafnium Zirconium Oxide

    X. Lyu;M. Si;P. R. Shrestha;K. P. Cheung

  • Direct Observation of Self-Heating in III–V Gate-All-Around Nanowire MOSFETs

    SangHoon Shin;Muhammad Abdul Wahab;Muhammad Masuduzzaman;Kerry Maize

  • Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction.

    Mengwei Si;Zhuocheng Zhang;Sou-Chi Chang;Nazila Haratipour

  • Review - Extremely Thin Amorphous Indium Oxide Transistors.

    Unknown

Frequent Co-Authors

Peide D. Ye
Peide D. Ye Purdue University West Lafayette
Hong Zhou
Hong Zhou Xidian University
Muhammad A. Alam
Muhammad A. Alam Purdue University West Lafayette
Wenzhuo Wu
Wenzhuo Wu Purdue University West Lafayette
Sumeet Kumar Gupta
Sumeet Kumar Gupta Purdue University West Lafayette
Ali Shakouri
Ali Shakouri Purdue University West Lafayette
Roy G. Gordon
Roy G. Gordon Harvard University
Sina Najmaei
Sina Najmaei United States Army Research Laboratory
Jun Lou
Jun Lou Rice University
Pulickel M. Ajayan
Pulickel M. Ajayan Rice University

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